06FD11 Carbon Nanotube-Based Floating Gate Memories with High-k Dielectrics (4 pages)

Gespeichert in:

Autor*in:	Fujii, Yusuke [verfasserIn] Ohori, Takahiro Ohno, Yasuhide Maehashi, Kenzo Inoue, Koichi Matsumoto, Kazuhiko

Format:	Artikel

Erschienen:	2012

Systematik:	UA 4210.

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers - Tokyo : Ōyō Butsuri Gakkai, 1982, 51(2012), 6, 2
Übergeordnetes Werk:	volume:51 ; year:2012 ; number:6 ; supplement:2

Katalog-ID:	OLC1902033590

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