Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Gespeichert in:

Autor*in:	Rousseau, M. [verfasserIn] Soltani, A. De Jaeger, J. C.

Format:	Artikel

Erschienen:	2012

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 101(2012), 12 vom: 17. Sept., Seite 122101-122102
Übergeordnetes Werk:	volume:101 ; year:2012 ; number:12 ; day:17 ; month:09 ; pages:122101-122102 ; extent:1

Katalog-ID:	OLC1903802008

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spelling	sw120922_1 (DE-627)OLC1903802008 (DE-599)GBVOLC1903802008 DE-627 ger DE-627 rakwb 530 Rousseau, M. verfasserin aut Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Soltani, A. oth De Jaeger, J. C. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 101(2012), 12 vom: 17. Sept., Seite 122101-122102 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:101 year:2012 number:12 day:17 month:09 pages:122101-122102 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2409 GBV_ILN_4319 GBV_ILN_4700 AR 101 2012 12 17 9 122101-122102 1
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