A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS
Autor*in: |
YOUSEFI, REZA [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
2012 |
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Systematik: |
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Umfang: |
1 |
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Übergeordnetes Werk: |
Enthalten in: International journal of modern physics / B - Singapore [u.a.] : World Scientific Publ., 1987, 26(2012), 29, Seite 1250155-1 |
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Übergeordnetes Werk: |
volume:26 ; year:2012 ; number:29 ; pages:1250155-1 ; extent:1 |
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sw121001_1 (DE-627)OLC1904223893 (DE-599)GBVOLC1904223893 DE-627 ger DE-627 rakwb 530 UA 4381. AVZ rvk YOUSEFI, REZA verfasserin aut A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier GHOREISHI, SEYYED SALEH oth Enthalten in International journal of modern physics / B Singapore [u.a.] : World Scientific Publ., 1987 26(2012), 29, Seite 1250155-1 (DE-627)12962215X (DE-600)246716-1 (DE-576)015132285 0217-9792 nnns volume:26 year:2012 number:29 pages:1250155-1 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 UA 4381. AR 26 2012 29 1250155-1 1 |
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sw121001_1 (DE-627)OLC1904223893 (DE-599)GBVOLC1904223893 DE-627 ger DE-627 rakwb 530 UA 4381. AVZ rvk YOUSEFI, REZA verfasserin aut A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier GHOREISHI, SEYYED SALEH oth Enthalten in International journal of modern physics / B Singapore [u.a.] : World Scientific Publ., 1987 26(2012), 29, Seite 1250155-1 (DE-627)12962215X (DE-600)246716-1 (DE-576)015132285 0217-9792 nnns volume:26 year:2012 number:29 pages:1250155-1 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 UA 4381. AR 26 2012 29 1250155-1 1 |
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sw121001_1 (DE-627)OLC1904223893 (DE-599)GBVOLC1904223893 DE-627 ger DE-627 rakwb 530 UA 4381. AVZ rvk YOUSEFI, REZA verfasserin aut A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier GHOREISHI, SEYYED SALEH oth Enthalten in International journal of modern physics / B Singapore [u.a.] : World Scientific Publ., 1987 26(2012), 29, Seite 1250155-1 (DE-627)12962215X (DE-600)246716-1 (DE-576)015132285 0217-9792 nnns volume:26 year:2012 number:29 pages:1250155-1 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_70 UA 4381. AR 26 2012 29 1250155-1 1 |
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YOUSEFI, REZA |
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computational study of strain effects in the band-to-band-tunneling carbon nanotube field-effect transistors |
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A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS |
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