Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles

Gespeichert in:

Autor*in:	Tanaka, Shuji [verfasserIn] Mohri, Mamoru Ogashiwa, Toshinori Fukushi, Hideyuki Tanaka, Katsunao Nakamura, Daisuke Nishimori, Takashi Esashi, Masayoshi

Format:	Artikel

Erschienen:	2012

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Sensors and actuators / A - Amsterdam [u.a.] : Elsevier, 1990, 188(2012) vom: Dez., Seite 198-202
Übergeordnetes Werk:	volume:188 ; year:2012 ; month:12 ; pages:198-202 ; extent:5

Katalog-ID:	OLC1907540431

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allfields	sw121125_1 (DE-627)OLC1907540431 (DE-599)GBVOLC1907540431 DE-627 ger DE-627 rakwb 530 620 Tanaka, Shuji verfasserin aut Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles 2012 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Mohri, Mamoru oth Ogashiwa, Toshinori oth Fukushi, Hideyuki oth Tanaka, Katsunao oth Nakamura, Daisuke oth Nishimori, Takashi oth Esashi, Masayoshi oth Enthalten in Sensors and actuators <Lausanne> / A Amsterdam [u.a.] : Elsevier, 1990 188(2012) vom: Dez., Seite 198-202 (DE-627)130852945 (DE-600)1026063-8 (DE-576)023100265 0924-4247 nnns volume:188 year:2012 month:12 pages:198-202 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2045 GBV_ILN_4700 AR 188 2012 12 198-202 5
spelling	sw121125_1 (DE-627)OLC1907540431 (DE-599)GBVOLC1907540431 DE-627 ger DE-627 rakwb 530 620 Tanaka, Shuji verfasserin aut Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles 2012 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Mohri, Mamoru oth Ogashiwa, Toshinori oth Fukushi, Hideyuki oth Tanaka, Katsunao oth Nakamura, Daisuke oth Nishimori, Takashi oth Esashi, Masayoshi oth Enthalten in Sensors and actuators <Lausanne> / A Amsterdam [u.a.] : Elsevier, 1990 188(2012) vom: Dez., Seite 198-202 (DE-627)130852945 (DE-600)1026063-8 (DE-576)023100265 0924-4247 nnns volume:188 year:2012 month:12 pages:198-202 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2045 GBV_ILN_4700 AR 188 2012 12 198-202 5
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allfieldsGer	sw121125_1 (DE-627)OLC1907540431 (DE-599)GBVOLC1907540431 DE-627 ger DE-627 rakwb 530 620 Tanaka, Shuji verfasserin aut Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles 2012 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Mohri, Mamoru oth Ogashiwa, Toshinori oth Fukushi, Hideyuki oth Tanaka, Katsunao oth Nakamura, Daisuke oth Nishimori, Takashi oth Esashi, Masayoshi oth Enthalten in Sensors and actuators <Lausanne> / A Amsterdam [u.a.] : Elsevier, 1990 188(2012) vom: Dez., Seite 198-202 (DE-627)130852945 (DE-600)1026063-8 (DE-576)023100265 0924-4247 nnns volume:188 year:2012 month:12 pages:198-202 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2045 GBV_ILN_4700 AR 188 2012 12 198-202 5
allfieldsSound	sw121125_1 (DE-627)OLC1907540431 (DE-599)GBVOLC1907540431 DE-627 ger DE-627 rakwb 530 620 Tanaka, Shuji verfasserin aut Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles 2012 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Mohri, Mamoru oth Ogashiwa, Toshinori oth Fukushi, Hideyuki oth Tanaka, Katsunao oth Nakamura, Daisuke oth Nishimori, Takashi oth Esashi, Masayoshi oth Enthalten in Sensors and actuators <Lausanne> / A Amsterdam [u.a.] : Elsevier, 1990 188(2012) vom: Dez., Seite 198-202 (DE-627)130852945 (DE-600)1026063-8 (DE-576)023100265 0924-4247 nnns volume:188 year:2012 month:12 pages:198-202 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2006 GBV_ILN_2020 GBV_ILN_2045 GBV_ILN_4700 AR 188 2012 12 198-202 5
source	Enthalten in Sensors and actuators <Lausanne> / A 188(2012) vom: Dez., Seite 198-202 volume:188 year:2012 month:12 pages:198-202 extent:5
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title_sort	electrical interconnection in anodic bonding of silicon wafer to ltcc wafer using highly compliant porous bumps made from submicron gold particles
title_auth	Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles
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title_short	Electrical interconnection in anodic bonding of silicon wafer to LTCC wafer using highly compliant porous bumps made from submicron gold particles
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