Corrigendum to “Facile fabrication of ordered Si1− x Ge x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates” [J. Alloys Comp. 535 (2012) 166–172]

Gespeichert in:

Autor*in:	Park, Sang-Joon [verfasserIn] Hwang, Inchan Lee, Heungsun Baik, Sunggi Kim, Hyungjun

Format:	Artikel

Erschienen:	2013

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Journal of alloys and compounds - Lausanne : Elsevier Sequoia, 1991, 547(2013) vom: 15. Jan., Seite 152-152
Übergeordnetes Werk:	volume:547 ; year:2013 ; day:15 ; month:01 ; pages:152-152 ; extent:1

Katalog-ID:	OLC1908625562

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allfields	sw121212_1 (DE-627)OLC1908625562 (DE-599)GBVOLC1908625562 DE-627 ger DE-627 rakwb 670 540 Park, Sang-Joon verfasserin aut Corrigendum to “Facile fabrication of ordered Si1− x Ge x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates” [J. Alloys Comp. 535 (2012) 166–172] 2013 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Hwang, Inchan oth Lee, Heungsun oth Baik, Sunggi oth Kim, Hyungjun oth Enthalten in Journal of alloys and compounds Lausanne : Elsevier Sequoia, 1991 547(2013) vom: 15. Jan., Seite 152-152 (DE-627)131014595 (DE-600)1090065-2 (DE-576)027074218 0925-8388 nnns volume:547 year:2013 day:15 month:01 pages:152-152 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_2185 AR 547 2013 15 1 152-152 1
spelling	sw121212_1 (DE-627)OLC1908625562 (DE-599)GBVOLC1908625562 DE-627 ger DE-627 rakwb 670 540 Park, Sang-Joon verfasserin aut Corrigendum to “Facile fabrication of ordered Si1− x Ge x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates” [J. Alloys Comp. 535 (2012) 166–172] 2013 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Hwang, Inchan oth Lee, Heungsun oth Baik, Sunggi oth Kim, Hyungjun oth Enthalten in Journal of alloys and compounds Lausanne : Elsevier Sequoia, 1991 547(2013) vom: 15. Jan., Seite 152-152 (DE-627)131014595 (DE-600)1090065-2 (DE-576)027074218 0925-8388 nnns volume:547 year:2013 day:15 month:01 pages:152-152 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_2185 AR 547 2013 15 1 152-152 1
allfields_unstemmed	sw121212_1 (DE-627)OLC1908625562 (DE-599)GBVOLC1908625562 DE-627 ger DE-627 rakwb 670 540 Park, Sang-Joon verfasserin aut Corrigendum to “Facile fabrication of ordered Si1− x Ge x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates” [J. Alloys Comp. 535 (2012) 166–172] 2013 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Hwang, Inchan oth Lee, Heungsun oth Baik, Sunggi oth Kim, Hyungjun oth Enthalten in Journal of alloys and compounds Lausanne : Elsevier Sequoia, 1991 547(2013) vom: 15. Jan., Seite 152-152 (DE-627)131014595 (DE-600)1090065-2 (DE-576)027074218 0925-8388 nnns volume:547 year:2013 day:15 month:01 pages:152-152 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_2185 AR 547 2013 15 1 152-152 1
allfieldsGer	sw121212_1 (DE-627)OLC1908625562 (DE-599)GBVOLC1908625562 DE-627 ger DE-627 rakwb 670 540 Park, Sang-Joon verfasserin aut Corrigendum to “Facile fabrication of ordered Si1− x Ge x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates” [J. Alloys Comp. 535 (2012) 166–172] 2013 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Hwang, Inchan oth Lee, Heungsun oth Baik, Sunggi oth Kim, Hyungjun oth Enthalten in Journal of alloys and compounds Lausanne : Elsevier Sequoia, 1991 547(2013) vom: 15. Jan., Seite 152-152 (DE-627)131014595 (DE-600)1090065-2 (DE-576)027074218 0925-8388 nnns volume:547 year:2013 day:15 month:01 pages:152-152 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_2185 AR 547 2013 15 1 152-152 1
allfieldsSound	sw121212_1 (DE-627)OLC1908625562 (DE-599)GBVOLC1908625562 DE-627 ger DE-627 rakwb 670 540 Park, Sang-Joon verfasserin aut Corrigendum to “Facile fabrication of ordered Si1− x Ge x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates” [J. Alloys Comp. 535 (2012) 166–172] 2013 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Hwang, Inchan oth Lee, Heungsun oth Baik, Sunggi oth Kim, Hyungjun oth Enthalten in Journal of alloys and compounds Lausanne : Elsevier Sequoia, 1991 547(2013) vom: 15. Jan., Seite 152-152 (DE-627)131014595 (DE-600)1090065-2 (DE-576)027074218 0925-8388 nnns volume:547 year:2013 day:15 month:01 pages:152-152 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-PHA SSG-OLC-DE-84 GBV_ILN_70 GBV_ILN_2185 AR 547 2013 15 1 152-152 1
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Corrigendum to “Facile fabrication of ordered Si1− x Ge x nanostructures via hybrid process of selective epitaxial growth (SEG) and self-assembled nanotemplates” [J. Alloys Comp. 535 (2012) 166–172]

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