Growth and conduction mechanism of As-doped p-type ZnO thin films deposited by MOCVD

Gespeichert in:

Autor*in:	Ma, Y. [verfasserIn] Gao, Q. Wu, G.G. Li, W.C. Gao, F.B. Yin, J.Z. Zhang, B.L. Du, G.T.

Format:	Artikel

Erschienen:	2013

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Materials research bulletin - Tarrytown, NY : Pergamon, 1966, 48(2013), 3 vom: März, Seite 1239-1243
Übergeordnetes Werk:	volume:48 ; year:2013 ; number:3 ; month:03 ; pages:1239-1243 ; extent:5

Katalog-ID:	OLC1911593749

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