Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs

Gespeichert in:

Autor*in:	Goswami, A. [verfasserIn] Trew, R.J. Bilbro, G.L.

Format:	Artikel

Erschienen:	2013

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Amsterdam [u.a.] : Elsevier, 1960, 80(2013) vom: Feb., Seite 23-27
Übergeordnetes Werk:	volume:80 ; year:2013 ; month:02 ; pages:23-27 ; extent:5

Katalog-ID:	OLC1912960834

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