Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method

Gespeichert in:

Autor*in:	Wang, Juan [verfasserIn] Ryu, Heui-Bum Park, Mi-Seon Lee, Won-Jae Choi, Young-Jun Lee, Hae-Yong

Format:	Artikel

Erschienen:	2013

Umfang:	5

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 370(2013) vom: 1. Mai, Seite 249-253
Übergeordnetes Werk:	volume:370 ; year:2013 ; day:1 ; month:05 ; pages:249-253 ; extent:5

Katalog-ID:	OLC1916348084

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spelling	sw130411_1 (DE-627)OLC1916348084 (DE-599)GBVOLC1916348084 DE-627 ger DE-627 rakwb 540 Wang, Juan verfasserin aut Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method 2013 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ryu, Heui-Bum oth Park, Mi-Seon oth Lee, Won-Jae oth Choi, Young-Jun oth Lee, Hae-Yong oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 370(2013) vom: 1. Mai, Seite 249-253 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:370 year:2013 day:1 month:05 pages:249-253 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 AR 370 2013 1 5 249-253 5
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allfieldsSound	sw130411_1 (DE-627)OLC1916348084 (DE-599)GBVOLC1916348084 DE-627 ger DE-627 rakwb 540 Wang, Juan verfasserin aut Epitaxy of GaN on Si(111) substrate by the hydride vapor phase epitaxy method 2013 5 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Ryu, Heui-Bum oth Park, Mi-Seon oth Lee, Won-Jae oth Choi, Young-Jun oth Lee, Hae-Yong oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 370(2013) vom: 1. Mai, Seite 249-253 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:370 year:2013 day:1 month:05 pages:249-253 extent:5 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 AR 370 2013 1 5 249-253 5
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