Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

Gespeichert in:

Autor*in:	Tseng, H. H. [verfasserIn] Wu, K. Y. Li, H. Mashanov, V. Cheng, H. H. Sun, G. Soref, R. A.

Format:	Artikel

Erschienen:	2013

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 102(2013), 18 vom: 6. Mai, Seite 182106-182106
Übergeordnetes Werk:	volume:102 ; year:2013 ; number:18 ; day:6 ; month:05 ; pages:182106-182106 ; extent:1

Katalog-ID:	OLC1918836949

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allfieldsSound	sw130511_2 (DE-627)OLC1918836949 (DE-599)GBVOLC1918836949 DE-627 ger DE-627 rakwb 530 Tseng, H. H. verfasserin aut Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate 2013 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Wu, K. Y. oth Li, H. oth Mashanov, V. oth Cheng, H. H. oth Sun, G. oth Soref, R. A. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 102(2013), 18 vom: 6. Mai, Seite 182106-182106 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:102 year:2013 number:18 day:6 month:05 pages:182106-182106 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 102 2013 18 6 5 182106-182106 1
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Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

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