Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Gespeichert in:

Autor*in:	Yan, Xin [verfasserIn] Zhang, Xia Li, Junshuai Cui, Jiangong Wang, Qi Huang, Yongqing Ren, Xiaomin

Format:	Artikel

Erschienen:	2013

Umfang:	6

Übergeordnetes Werk:	Enthalten in: Journal of crystal growth - Amsterdam [u.a.] : Elsevier, 1967, 384(2013) vom: 1. Dez., Seite 82-87
Übergeordnetes Werk:	volume:384 ; year:2013 ; day:1 ; month:12 ; pages:82-87 ; extent:6

Katalog-ID:	OLC1931021104

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allfieldsGer	sw131108_1 (DE-627)OLC1931021104 (DE-599)GBVOLC1931021104 DE-627 ger DE-627 rakwb 540 Yan, Xin verfasserin aut Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion 2013 6 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Zhang, Xia oth Li, Junshuai oth Cui, Jiangong oth Wang, Qi oth Huang, Yongqing oth Ren, Xiaomin oth Enthalten in Journal of crystal growth Amsterdam [u.a.] : Elsevier, 1967 384(2013) vom: 1. Dez., Seite 82-87 (DE-627)129078514 (DE-600)3043-0 (DE-576)014411075 0022-0248 nnns volume:384 year:2013 day:1 month:12 pages:82-87 extent:6 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY SSG-OLC-CHE SSG-OLC-GEO SSG-OLC-PHA SSG-OLC-DE-84 SSG-OPC-GGO GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 AR 384 2013 1 12 82-87 6
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