GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Gespeichert in:

Autor*in:	Tseng, H. H. [verfasserIn] Li, H. Mashanov, V. Yang, Y. J. Cheng, H. H. Chang, G. E. Soref, R. A. Sun, G.

Format:	Artikel

Erschienen:	2013

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 103(2013), 23 vom: 2. Dez., Seite 231907-231907
Übergeordnetes Werk:	volume:103 ; year:2013 ; number:23 ; day:2 ; month:12 ; pages:231907-231907 ; extent:1

Katalog-ID:	OLC1932710647

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GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

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Zugang & Verfügbarkeit

Vorhandene Bände

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