GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
Autor*in: |
Tseng, H. H. [verfasserIn] |
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Format: |
Artikel |
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Erschienen: |
2013 |
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Umfang: |
1 |
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Übergeordnetes Werk: |
Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 103(2013), 23 vom: 2. Dez., Seite 231907-231907 |
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Übergeordnetes Werk: |
volume:103 ; year:2013 ; number:23 ; day:2 ; month:12 ; pages:231907-231907 ; extent:1 |
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sw131207_1 (DE-627)OLC1932710647 (DE-599)GBVOLC1932710647 DE-627 ger DE-627 rakwb 530 Tseng, H. H. verfasserin aut GeSn-based p-i-n photodiodes with strained active layer on a Si wafer 2013 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Li, H. oth Mashanov, V. oth Yang, Y. J. oth Cheng, H. H. oth Chang, G. E. oth Soref, R. A. oth Sun, G. oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 103(2013), 23 vom: 2. Dez., Seite 231907-231907 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:103 year:2013 number:23 day:2 month:12 pages:231907-231907 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 103 2013 23 2 12 231907-231907 1 |
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