Electrical Property of DNA Field-Effect Transistor: Charge Retention Property
Autor*in: |
Matsuo, Naoto [verfasserIn] |
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Artikel |
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Erschienen: |
2012 |
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Systematik: |
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Umfang: |
1 |
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Übergeordnetes Werk: |
Enthalten in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers - Tokyo : Ōyō Butsuri Gakkai, 1982, 51(2012), 4, S vom: 1. Apr., Seite 4DD13 |
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Übergeordnetes Werk: |
volume:51 ; year:2012 ; number:4 ; day:1 ; month:04 ; supplement:S ; pages:4DD13 ; extent:1 |
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sw140125_1 (DE-627)OLC1935438352 (DE-599)GBVOLC1935438352 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Matsuo, Naoto verfasserin aut Electrical Property of DNA Field-Effect Transistor: Charge Retention Property 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Takagi, Shyogo oth Yamana, Kazushige oth Heya, Akira oth Takada, Tadao oth Yokoyama, Shin oth Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers Tokyo : Ōyō Butsuri Gakkai, 1982 51(2012), 4, S vom: 1. Apr., Seite 4DD13 (DE-627)130626937 (DE-600)797294-5 (DE-576)016133269 0021-4922 nnns volume:51 year:2012 number:4 day:1 month:04 supplement:S pages:4DD13 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY UA 4210. AR 51 2012 4 1 4 S 4DD13 1 |
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sw140125_1 (DE-627)OLC1935438352 (DE-599)GBVOLC1935438352 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Matsuo, Naoto verfasserin aut Electrical Property of DNA Field-Effect Transistor: Charge Retention Property 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Takagi, Shyogo oth Yamana, Kazushige oth Heya, Akira oth Takada, Tadao oth Yokoyama, Shin oth Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers Tokyo : Ōyō Butsuri Gakkai, 1982 51(2012), 4, S vom: 1. Apr., Seite 4DD13 (DE-627)130626937 (DE-600)797294-5 (DE-576)016133269 0021-4922 nnns volume:51 year:2012 number:4 day:1 month:04 supplement:S pages:4DD13 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY UA 4210. AR 51 2012 4 1 4 S 4DD13 1 |
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sw140125_1 (DE-627)OLC1935438352 (DE-599)GBVOLC1935438352 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Matsuo, Naoto verfasserin aut Electrical Property of DNA Field-Effect Transistor: Charge Retention Property 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Takagi, Shyogo oth Yamana, Kazushige oth Heya, Akira oth Takada, Tadao oth Yokoyama, Shin oth Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers Tokyo : Ōyō Butsuri Gakkai, 1982 51(2012), 4, S vom: 1. Apr., Seite 4DD13 (DE-627)130626937 (DE-600)797294-5 (DE-576)016133269 0021-4922 nnns volume:51 year:2012 number:4 day:1 month:04 supplement:S pages:4DD13 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY UA 4210. AR 51 2012 4 1 4 S 4DD13 1 |
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sw140125_1 (DE-627)OLC1935438352 (DE-599)GBVOLC1935438352 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Matsuo, Naoto verfasserin aut Electrical Property of DNA Field-Effect Transistor: Charge Retention Property 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Takagi, Shyogo oth Yamana, Kazushige oth Heya, Akira oth Takada, Tadao oth Yokoyama, Shin oth Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers Tokyo : Ōyō Butsuri Gakkai, 1982 51(2012), 4, S vom: 1. Apr., Seite 4DD13 (DE-627)130626937 (DE-600)797294-5 (DE-576)016133269 0021-4922 nnns volume:51 year:2012 number:4 day:1 month:04 supplement:S pages:4DD13 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY UA 4210. AR 51 2012 4 1 4 S 4DD13 1 |
allfieldsSound |
sw140125_1 (DE-627)OLC1935438352 (DE-599)GBVOLC1935438352 DE-627 ger DE-627 rakwb 530 UA 4210. AVZ rvk Matsuo, Naoto verfasserin aut Electrical Property of DNA Field-Effect Transistor: Charge Retention Property 2012 1 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Takagi, Shyogo oth Yamana, Kazushige oth Heya, Akira oth Takada, Tadao oth Yokoyama, Shin oth Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers Tokyo : Ōyō Butsuri Gakkai, 1982 51(2012), 4, S vom: 1. Apr., Seite 4DD13 (DE-627)130626937 (DE-600)797294-5 (DE-576)016133269 0021-4922 nnns volume:51 year:2012 number:4 day:1 month:04 supplement:S pages:4DD13 extent:1 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY UA 4210. AR 51 2012 4 1 4 S 4DD13 1 |
source |
Enthalten in Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers 51(2012), 4, S vom: 1. Apr., Seite 4DD13 volume:51 year:2012 number:4 day:1 month:04 supplement:S pages:4DD13 extent:1 |
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