Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by Metal–Organic Vapor Phase Epitaxy in H2 and N2 Ambients

Gespeichert in:

Autor*in:	Nykänen, Henri [verfasserIn] Suihkonen, Sami Svensk, Olli Sopanen, Markku Tuomisto, Filip

Format:	Artikel

Erschienen:	2013

Systematik:	UA 4210.

Umfang:	1

Übergeordnetes Werk:	Enthalten in: Japanese journal of applied physics. Part 1, Regular papers, brief communications & review papers - Tokyo : Ōyō Butsuri Gakkai, 1982, 52(2013), 11, S vom: 1. Nov., Seite 11NH04
Übergeordnetes Werk:	volume:52 ; year:2013 ; number:11 ; day:1 ; month:11 ; supplement:S ; pages:11NH04 ; extent:1

Katalog-ID:	OLC193549161X

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title_sort	band-edge luminescence degradation by low energy electron beam irradiation in gan grown by metal–organic vapor phase epitaxy in h2 and n2 ambients
title_auth	Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by Metal–Organic Vapor Phase Epitaxy in H2 and N2 Ambients
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