3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films

Gespeichert in:

Autor*in:	Ou, S L [verfasserIn] Kao, K S Lee, C T Ko, T S Chang, H F Yeh, H H

Format:	Artikel

Erschienen:	2014

Übergeordnetes Werk:	Enthalten in: IEEE transactions on magnetics - New York, NY : IEEE, 1965, 50(2014), 7, 2
Übergeordnetes Werk:	volume:50 ; year:2014 ; number:7 ; supplement:2

Katalog-ID:	OLC1949385272

Internformat


LEADER	01000caa a22002652 4500
001	OLC1949385272
003	DE-627
005	20220223135027.0
007	tu
008	140822s2014 xx \|\|\|\|\| 00\| \|\|und c
028	5	2	\|a sw140821_1
035			\|a (DE-627)OLC1949385272
035			\|a (DE-599)GBVOLC1949385272
035			\|a (KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
082	0	4	\|a 620
084			\|a 33.75 \|2 bkl
084			\|a 33.16 \|2 bkl
100	1		\|a Ou, S L \|e verfasserin \|4 aut
245	1	0	\|a 3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films
264		1	\|c 2014
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Kao, K S \|4 oth
700	1		\|a Lee, C T \|4 oth
700	1		\|a Ko, T S \|4 oth
700	1		\|a Chang, H F \|4 oth
700	1		\|a Yeh, H H \|4 oth
773	0	8	\|i Enthalten in \|t IEEE transactions on magnetics \|d New York, NY : IEEE, 1965 \|g 50(2014), 7, 2 \|w (DE-627)129602078 \|w (DE-600)241508-2 \|w (DE-576)015095789 \|x 0018-9464 \|7 nnns
773	1	8	\|g volume:50 \|g year:2014 \|g number:7 \|g supplement:2
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a SSG-OLC-PHY
912			\|a GBV_ILN_65
912			\|a GBV_ILN_70
912			\|a GBV_ILN_170
936	b	k	\|a 33.75 \|q AVZ
936	b	k	\|a 33.16 \|q AVZ
951			\|a AR
952			\|d 50 \|j 2014 \|e 7 \|f 2

Indexfelder

author_variant	s l o sl slo
matchkey_str	article:00189464:2014----::510rcrighrceitcadrsalztobhvooigss
hierarchy_sort_str	2014
bklnumber	33.75 33.16
publishDate	2014
allfields	sw140821_1 (DE-627)OLC1949385272 (DE-599)GBVOLC1949385272 (KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb DE-627 ger DE-627 rakwb 620 33.75 bkl 33.16 bkl Ou, S L verfasserin aut 3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kao, K S oth Lee, C T oth Ko, T S oth Chang, H F oth Yeh, H H oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 50(2014), 7, 2 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:50 year:2014 number:7 supplement:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 50 2014 7 2
spelling	sw140821_1 (DE-627)OLC1949385272 (DE-599)GBVOLC1949385272 (KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb DE-627 ger DE-627 rakwb 620 33.75 bkl 33.16 bkl Ou, S L verfasserin aut 3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kao, K S oth Lee, C T oth Ko, T S oth Chang, H F oth Yeh, H H oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 50(2014), 7, 2 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:50 year:2014 number:7 supplement:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 50 2014 7 2
allfields_unstemmed	sw140821_1 (DE-627)OLC1949385272 (DE-599)GBVOLC1949385272 (KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb DE-627 ger DE-627 rakwb 620 33.75 bkl 33.16 bkl Ou, S L verfasserin aut 3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kao, K S oth Lee, C T oth Ko, T S oth Chang, H F oth Yeh, H H oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 50(2014), 7, 2 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:50 year:2014 number:7 supplement:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 50 2014 7 2
allfieldsGer	sw140821_1 (DE-627)OLC1949385272 (DE-599)GBVOLC1949385272 (KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb DE-627 ger DE-627 rakwb 620 33.75 bkl 33.16 bkl Ou, S L verfasserin aut 3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kao, K S oth Lee, C T oth Ko, T S oth Chang, H F oth Yeh, H H oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 50(2014), 7, 2 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:50 year:2014 number:7 supplement:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 50 2014 7 2
allfieldsSound	sw140821_1 (DE-627)OLC1949385272 (DE-599)GBVOLC1949385272 (KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb DE-627 ger DE-627 rakwb 620 33.75 bkl 33.16 bkl Ou, S L verfasserin aut 3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films 2014 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kao, K S oth Lee, C T oth Ko, T S oth Chang, H F oth Yeh, H H oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 50(2014), 7, 2 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:50 year:2014 number:7 supplement:2 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_65 GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 50 2014 7 2
source	Enthalten in IEEE transactions on magnetics 50(2014), 7, 2 volume:50 year:2014 number:7 supplement:2
sourceStr	Enthalten in IEEE transactions on magnetics 50(2014), 7, 2 volume:50 year:2014 number:7 supplement:2
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE transactions on magnetics
authorswithroles_txt_mv	Ou, S L @@aut@@ Kao, K S @@oth@@ Lee, C T @@oth@@ Ko, T S @@oth@@ Chang, H F @@oth@@ Yeh, H H @@oth@@
publishDateDaySort_date	2014-01-01T00:00:00Z
hierarchy_top_id	129602078
dewey-sort	3620
id	OLC1949385272
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1949385272</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220223135027.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">140822s2014 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw140821_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1949385272</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1949385272</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.75</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.16</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ou, S L</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kao, K S</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, C T</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ko, T S</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chang, H F</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yeh, H H</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on magnetics</subfield><subfield code="d">New York, NY : IEEE, 1965</subfield><subfield code="g">50(2014), 7, 2</subfield><subfield code="w">(DE-627)129602078</subfield><subfield code="w">(DE-600)241508-2</subfield><subfield code="w">(DE-576)015095789</subfield><subfield code="x">0018-9464</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:50</subfield><subfield code="g">year:2014</subfield><subfield code="g">number:7</subfield><subfield code="g">supplement:2</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.75</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.16</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">50</subfield><subfield code="j">2014</subfield><subfield code="e">7</subfield><subfield code="f">2</subfield></datafield></record></collection>
author	Ou, S L
spellingShingle	Ou, S L ddc 620 bkl 33.75 bkl 33.16 3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films
authorStr	Ou, S L
ppnlink_with_tag_str_mv	@@773@@(DE-627)129602078
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0018-9464
topic_title	620 33.75 bkl 33.16 bkl 3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films
topic	ddc 620 bkl 33.75 bkl 33.16
topic_unstemmed	ddc 620 bkl 33.75 bkl 33.16
topic_browse	ddc 620 bkl 33.75 bkl 33.16
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	k s k ks ksk c t l ct ctl t s k ts tsk h f c hf hfc h h y hh hhy
hierarchy_parent_title	IEEE transactions on magnetics
hierarchy_parent_id	129602078
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE transactions on magnetics
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129602078 (DE-600)241508-2 (DE-576)015095789
title	3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films
ctrlnum	(DE-627)OLC1949385272 (DE-599)GBVOLC1949385272 (KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb
title_full	3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films
author_sort	Ou, S L
journal	IEEE transactions on magnetics
journalStr	IEEE transactions on magnetics
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2014
contenttype_str_mv	txt
author_browse	Ou, S L
container_volume	50
class	620 33.75 bkl 33.16 bkl
format_se	Aufsätze
author-letter	Ou, S L
dewey-full	620
title_sort	3501604 - recording characteristics and crystallization behavior of ingesbsnte phase change thin films
title_auth	3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_65 GBV_ILN_70 GBV_ILN_170
container_issue	7
title_short	3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films
remote_bool	false
author2	Kao, K S Lee, C T Ko, T S Chang, H F Yeh, H H
author2Str	Kao, K S Lee, C T Ko, T S Chang, H F Yeh, H H
ppnlink	129602078
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth
up_date	2024-07-03T17:51:18.732Z
_version_	1803581211262582784
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">OLC1949385272</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220223135027.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">140822s2014 xx \|\|\|\|\| 00\| \|\|und c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">sw140821_1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1949385272</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1949385272</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)00614521201400000500007000003501604recordingcharacteristicsandcrystallizationb</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.75</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.16</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ou, S L</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kao, K S</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, C T</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ko, T S</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chang, H F</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yeh, H H</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on magnetics</subfield><subfield code="d">New York, NY : IEEE, 1965</subfield><subfield code="g">50(2014), 7, 2</subfield><subfield code="w">(DE-627)129602078</subfield><subfield code="w">(DE-600)241508-2</subfield><subfield code="w">(DE-576)015095789</subfield><subfield code="x">0018-9464</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:50</subfield><subfield code="g">year:2014</subfield><subfield code="g">number:7</subfield><subfield code="g">supplement:2</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.75</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.16</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">50</subfield><subfield code="j">2014</subfield><subfield code="e">7</subfield><subfield code="f">2</subfield></datafield></record></collection>
score	7.4012003

Nicht das Richtige dabei?

Schreiben Sie uns!

3501604 - Recording Characteristics and Crystallization Behavior of InGeSbSnTe Phase Change Thin Films

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?