Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates
We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influenc...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Brehm, Moritz [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Übergeordnetes Werk: |
Enthalten in: Nanotechnology - Bristol : IOP Publishing Ltd., 1990, 26(2015), 48 |
|---|---|
| Übergeordnetes Werk: |
volume:26 ; year:2015 ; number:48 |
| Links: |
|---|
| Katalog-ID: |
OLC1958741248 |
|---|
| LEADER | 01000caa a2200265 4500 | ||
|---|---|---|---|
| 001 | OLC1958741248 | ||
| 003 | DE-627 | ||
| 005 | 20230714145547.0 | ||
| 007 | tu | ||
| 008 | 160206s2015 xx ||||| 00| ||eng c | ||
| 028 | 5 | 2 | |a PQ20160430 |
| 035 | |a (DE-627)OLC1958741248 | ||
| 035 | |a (DE-599)GBVOLC1958741248 | ||
| 035 | |a (PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0 | ||
| 035 | |a (KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 530 |q DNB |
| 100 | 1 | |a Brehm, Moritz |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates |
| 264 | 1 | |c 2015 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 520 | |a We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. | ||
| 700 | 1 | |a Groiss, Heiko |4 oth | |
| 700 | 1 | |a Bauer, Günther |4 oth | |
| 700 | 1 | |a Gerthsen, Dagmar |4 oth | |
| 700 | 1 | |a Clarke, Roy |4 oth | |
| 700 | 1 | |a Paltiel, Yossi |4 oth | |
| 700 | 1 | |a Yacoby, Yizhak |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |t Nanotechnology |d Bristol : IOP Publishing Ltd., 1990 |g 26(2015), 48 |w (DE-627)130923141 |w (DE-600)1054118-4 |w (DE-576)025181165 |x 0957-4484 |7 nnns |
| 773 | 1 | 8 | |g volume:26 |g year:2015 |g number:48 |
| 856 | 4 | 2 | |u http://www.ncbi.nlm.nih.gov/pubmed/26553384 |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_170 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_4126 | ||
| 951 | |a AR | ||
| 952 | |d 26 |j 2015 |e 48 | ||
| author_variant |
m b mb |
|---|---|
| matchkey_str |
article:09574484:2015----::tmctutradopstodsrbtoiwtigaesnilnsfemnug |
| hierarchy_sort_str |
2015 |
| publishDate |
2015 |
| allfields |
PQ20160430 (DE-627)OLC1958741248 (DE-599)GBVOLC1958741248 (PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0 (KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting DE-627 ger DE-627 rakwb eng 530 DNB Brehm, Moritz verfasserin aut Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. Groiss, Heiko oth Bauer, Günther oth Gerthsen, Dagmar oth Clarke, Roy oth Paltiel, Yossi oth Yacoby, Yizhak oth Enthalten in Nanotechnology Bristol : IOP Publishing Ltd., 1990 26(2015), 48 (DE-627)130923141 (DE-600)1054118-4 (DE-576)025181165 0957-4484 nnns volume:26 year:2015 number:48 http://www.ncbi.nlm.nih.gov/pubmed/26553384 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_4126 AR 26 2015 48 |
| spelling |
PQ20160430 (DE-627)OLC1958741248 (DE-599)GBVOLC1958741248 (PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0 (KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting DE-627 ger DE-627 rakwb eng 530 DNB Brehm, Moritz verfasserin aut Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. Groiss, Heiko oth Bauer, Günther oth Gerthsen, Dagmar oth Clarke, Roy oth Paltiel, Yossi oth Yacoby, Yizhak oth Enthalten in Nanotechnology Bristol : IOP Publishing Ltd., 1990 26(2015), 48 (DE-627)130923141 (DE-600)1054118-4 (DE-576)025181165 0957-4484 nnns volume:26 year:2015 number:48 http://www.ncbi.nlm.nih.gov/pubmed/26553384 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_4126 AR 26 2015 48 |
| allfields_unstemmed |
PQ20160430 (DE-627)OLC1958741248 (DE-599)GBVOLC1958741248 (PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0 (KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting DE-627 ger DE-627 rakwb eng 530 DNB Brehm, Moritz verfasserin aut Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. Groiss, Heiko oth Bauer, Günther oth Gerthsen, Dagmar oth Clarke, Roy oth Paltiel, Yossi oth Yacoby, Yizhak oth Enthalten in Nanotechnology Bristol : IOP Publishing Ltd., 1990 26(2015), 48 (DE-627)130923141 (DE-600)1054118-4 (DE-576)025181165 0957-4484 nnns volume:26 year:2015 number:48 http://www.ncbi.nlm.nih.gov/pubmed/26553384 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_4126 AR 26 2015 48 |
| allfieldsGer |
PQ20160430 (DE-627)OLC1958741248 (DE-599)GBVOLC1958741248 (PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0 (KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting DE-627 ger DE-627 rakwb eng 530 DNB Brehm, Moritz verfasserin aut Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. Groiss, Heiko oth Bauer, Günther oth Gerthsen, Dagmar oth Clarke, Roy oth Paltiel, Yossi oth Yacoby, Yizhak oth Enthalten in Nanotechnology Bristol : IOP Publishing Ltd., 1990 26(2015), 48 (DE-627)130923141 (DE-600)1054118-4 (DE-576)025181165 0957-4484 nnns volume:26 year:2015 number:48 http://www.ncbi.nlm.nih.gov/pubmed/26553384 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_4126 AR 26 2015 48 |
| allfieldsSound |
PQ20160430 (DE-627)OLC1958741248 (DE-599)GBVOLC1958741248 (PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0 (KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting DE-627 ger DE-627 rakwb eng 530 DNB Brehm, Moritz verfasserin aut Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. Groiss, Heiko oth Bauer, Günther oth Gerthsen, Dagmar oth Clarke, Roy oth Paltiel, Yossi oth Yacoby, Yizhak oth Enthalten in Nanotechnology Bristol : IOP Publishing Ltd., 1990 26(2015), 48 (DE-627)130923141 (DE-600)1054118-4 (DE-576)025181165 0957-4484 nnns volume:26 year:2015 number:48 http://www.ncbi.nlm.nih.gov/pubmed/26553384 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_4126 AR 26 2015 48 |
| language |
English |
| source |
Enthalten in Nanotechnology 26(2015), 48 volume:26 year:2015 number:48 |
| sourceStr |
Enthalten in Nanotechnology 26(2015), 48 volume:26 year:2015 number:48 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Nanotechnology |
| authorswithroles_txt_mv |
Brehm, Moritz @@aut@@ Groiss, Heiko @@oth@@ Bauer, Günther @@oth@@ Gerthsen, Dagmar @@oth@@ Clarke, Roy @@oth@@ Paltiel, Yossi @@oth@@ Yacoby, Yizhak @@oth@@ |
| publishDateDaySort_date |
2015-01-01T00:00:00Z |
| hierarchy_top_id |
130923141 |
| dewey-sort |
3530 |
| id |
OLC1958741248 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1958741248</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714145547.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160430</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1958741248</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1958741248</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Brehm, Moritz</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Groiss, Heiko</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bauer, Günther</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gerthsen, Dagmar</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Clarke, Roy</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Paltiel, Yossi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yacoby, Yizhak</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Nanotechnology</subfield><subfield code="d">Bristol : IOP Publishing Ltd., 1990</subfield><subfield code="g">26(2015), 48</subfield><subfield code="w">(DE-627)130923141</subfield><subfield code="w">(DE-600)1054118-4</subfield><subfield code="w">(DE-576)025181165</subfield><subfield code="x">0957-4484</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:26</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:48</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://www.ncbi.nlm.nih.gov/pubmed/26553384</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">26</subfield><subfield code="j">2015</subfield><subfield code="e">48</subfield></datafield></record></collection>
|
| author |
Brehm, Moritz |
| spellingShingle |
Brehm, Moritz ddc 530 Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates |
| authorStr |
Brehm, Moritz |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)130923141 |
| format |
Article |
| dewey-ones |
530 - Physics |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0957-4484 |
| topic_title |
530 DNB Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates |
| topic |
ddc 530 |
| topic_unstemmed |
ddc 530 |
| topic_browse |
ddc 530 |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| author2_variant |
h g hg g b gb d g dg r c rc y p yp y y yy |
| hierarchy_parent_title |
Nanotechnology |
| hierarchy_parent_id |
130923141 |
| dewey-tens |
530 - Physics |
| hierarchy_top_title |
Nanotechnology |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)130923141 (DE-600)1054118-4 (DE-576)025181165 |
| title |
Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates |
| ctrlnum |
(DE-627)OLC1958741248 (DE-599)GBVOLC1958741248 (PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0 (KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting |
| title_full |
Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates |
| author_sort |
Brehm, Moritz |
| journal |
Nanotechnology |
| journalStr |
Nanotechnology |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science |
| recordtype |
marc |
| publishDateSort |
2015 |
| contenttype_str_mv |
txt |
| author_browse |
Brehm, Moritz |
| container_volume |
26 |
| class |
530 DNB |
| format_se |
Aufsätze |
| author-letter |
Brehm, Moritz |
| dewey-full |
530 |
| title_sort |
atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates |
| title_auth |
Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates |
| abstract |
We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. |
| abstractGer |
We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. |
| abstract_unstemmed |
We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2005 GBV_ILN_4126 |
| container_issue |
48 |
| title_short |
Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates |
| url |
http://www.ncbi.nlm.nih.gov/pubmed/26553384 |
| remote_bool |
false |
| author2 |
Groiss, Heiko Bauer, Günther Gerthsen, Dagmar Clarke, Roy Paltiel, Yossi Yacoby, Yizhak |
| author2Str |
Groiss, Heiko Bauer, Günther Gerthsen, Dagmar Clarke, Roy Paltiel, Yossi Yacoby, Yizhak |
| ppnlink |
130923141 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth oth |
| up_date |
2024-07-03T14:23:07.007Z |
| _version_ |
1803568112738500608 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1958741248</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714145547.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160430</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1958741248</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1958741248</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)p1481-99ba97a67bab53c70164e2100e4876de08aa314a8093ce6f7ca25aad708b277e0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0198956120150000026004800000atomicstructureandcompositiondistributioninwetting</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Brehm, Moritz</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Atomic structure and composition distribution in wetting layers and islands of germanium grown on silicon (001) substrates</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We present a comprehensive structural investigation of the Ge wetting layer (WL) and island growth on Si(001) substrates by a combination of AFM, high resolution transmission electron microscopy and the energy-differential coherent Bragg rod analysis (COBRA) x-ray method. By considering the influence of the initial Si surface morphology on the deposited Ge, these techniques provide quantitative information on the Ge content and its distribution, in particular within the WL which plays a crucial role in the formation of epitaxial nanostructures. In the WL, the Ge content was found to be above 80% for our growth conditions. Furthermore, from the digital analysis of high-resolution transmission electron microscope images, quantitative information on the strain relaxation is obtained, which complements the COBRA analysis of the Ge distribution and content in these nanostructures.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Groiss, Heiko</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bauer, Günther</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gerthsen, Dagmar</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Clarke, Roy</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Paltiel, Yossi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yacoby, Yizhak</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Nanotechnology</subfield><subfield code="d">Bristol : IOP Publishing Ltd., 1990</subfield><subfield code="g">26(2015), 48</subfield><subfield code="w">(DE-627)130923141</subfield><subfield code="w">(DE-600)1054118-4</subfield><subfield code="w">(DE-576)025181165</subfield><subfield code="x">0957-4484</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:26</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:48</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://www.ncbi.nlm.nih.gov/pubmed/26553384</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">26</subfield><subfield code="j">2015</subfield><subfield code="e">48</subfield></datafield></record></collection>
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| score |
7.4007587 |