Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified
Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varyin...
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| Autor*in: |
Mahmutoglu, Ahmet Gokcen [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on circuits and systems / 1 - New York, NY : Institute of Electrical and Electronics Engineers, 1992, 62(2015), 4, Seite 929-937 |
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| Übergeordnetes Werk: |
volume:62 ; year:2015 ; number:4 ; pages:929-937 |
| Links: |
|---|
| DOI / URN: |
10.1109/TCSI.2015.2388834 |
|---|
| Katalog-ID: |
OLC195925314X |
|---|
| LEADER | 01000caa a2200265 4500 | ||
|---|---|---|---|
| 001 | OLC195925314X | ||
| 003 | DE-627 | ||
| 005 | 20210715225532.0 | ||
| 007 | tu | ||
| 008 | 160206s2015 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1109/TCSI.2015.2388834 |2 doi | |
| 028 | 5 | 2 | |a PQ20160617 |
| 035 | |a (DE-627)OLC195925314X | ||
| 035 | |a (DE-599)GBVOLC195925314X | ||
| 035 | |a (PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0 | ||
| 035 | |a (KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 000 |a 620 |q DNB |
| 100 | 1 | |a Mahmutoglu, Ahmet Gokcen |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified |
| 264 | 1 | |c 2015 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 520 | |a Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. | ||
| 650 | 4 | |a Switching circuits | |
| 650 | 4 | |a Logic gates | |
| 650 | 4 | |a Transistors | |
| 650 | 4 | |a circuit simulator | |
| 650 | 4 | |a nonstationary noise | |
| 650 | 4 | |a noise analysis | |
| 650 | 4 | |a Switches | |
| 650 | 4 | |a Integrated circuit modeling | |
| 650 | 4 | |a compact MOSFET model | |
| 650 | 4 | |a MOSFET circuits | |
| 650 | 4 | |a correct spectrum expression | |
| 650 | 4 | |a single trap noise spectrum | |
| 650 | 4 | |a Noise | |
| 650 | 4 | |a Low-frequency noise | |
| 650 | 4 | |a integrated circuit noise | |
| 650 | 4 | |a Analytical models | |
| 650 | 4 | |a low-frequency noise analysis | |
| 650 | 4 | |a trap simulation | |
| 650 | 4 | |a circuit simulation | |
| 650 | 4 | |a RTS noise | |
| 650 | 4 | |a integrated circuit modelling | |
| 650 | 4 | |a switched MOSFET circuit | |
| 650 | 4 | |a nonstationary trap noise | |
| 650 | 4 | |a Circuits | |
| 650 | 4 | |a Measurement | |
| 650 | 4 | |a Integrated circuits | |
| 650 | 4 | |a Gates (Electronics) | |
| 650 | 4 | |a Voltage | |
| 650 | 4 | |a Metal oxide semiconductor field effect transistors | |
| 650 | 4 | |a Innovations | |
| 650 | 4 | |a Semiconductor chips | |
| 650 | 4 | |a Usage | |
| 650 | 4 | |a Mathematical optimization | |
| 700 | 1 | |a Demir, Alper |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |t IEEE transactions on circuits and systems / 1 |d New York, NY : Institute of Electrical and Electronics Engineers, 1992 |g 62(2015), 4, Seite 929-937 |w (DE-627)131043080 |w (DE-600)1100194-X |w (DE-576)02804679X |x 1549-8328 |7 nnns |
| 773 | 1 | 8 | |g volume:62 |g year:2015 |g number:4 |g pages:929-937 |
| 856 | 4 | 1 | |u http://dx.doi.org/10.1109/TCSI.2015.2388834 |3 Volltext |
| 856 | 4 | 2 | |u http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452 |
| 856 | 4 | 2 | |u http://search.proquest.com/docview/1685194626 |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-MAT | ||
| 912 | |a GBV_ILN_30 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2002 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2059 | ||
| 951 | |a AR | ||
| 952 | |d 62 |j 2015 |e 4 |h 929-937 | ||
| author_variant |
a g m ag agm |
|---|---|
| matchkey_str |
article:15498328:2015----::nlssfofeunyosisicemsecrutrv |
| hierarchy_sort_str |
2015 |
| publishDate |
2015 |
| allfields |
10.1109/TCSI.2015.2388834 doi PQ20160617 (DE-627)OLC195925314X (DE-599)GBVOLC195925314X (PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0 (KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit DE-627 ger DE-627 rakwb eng 000 620 DNB Mahmutoglu, Ahmet Gokcen verfasserin aut Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. Switching circuits Logic gates Transistors circuit simulator nonstationary noise noise analysis Switches Integrated circuit modeling compact MOSFET model MOSFET circuits correct spectrum expression single trap noise spectrum Noise Low-frequency noise integrated circuit noise Analytical models low-frequency noise analysis trap simulation circuit simulation RTS noise integrated circuit modelling switched MOSFET circuit nonstationary trap noise Circuits Measurement Integrated circuits Gates (Electronics) Voltage Metal oxide semiconductor field effect transistors Innovations Semiconductor chips Usage Mathematical optimization Demir, Alper oth Enthalten in IEEE transactions on circuits and systems / 1 New York, NY : Institute of Electrical and Electronics Engineers, 1992 62(2015), 4, Seite 929-937 (DE-627)131043080 (DE-600)1100194-X (DE-576)02804679X 1549-8328 nnns volume:62 year:2015 number:4 pages:929-937 http://dx.doi.org/10.1109/TCSI.2015.2388834 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452 http://search.proquest.com/docview/1685194626 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_30 GBV_ILN_70 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2059 AR 62 2015 4 929-937 |
| spelling |
10.1109/TCSI.2015.2388834 doi PQ20160617 (DE-627)OLC195925314X (DE-599)GBVOLC195925314X (PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0 (KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit DE-627 ger DE-627 rakwb eng 000 620 DNB Mahmutoglu, Ahmet Gokcen verfasserin aut Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. Switching circuits Logic gates Transistors circuit simulator nonstationary noise noise analysis Switches Integrated circuit modeling compact MOSFET model MOSFET circuits correct spectrum expression single trap noise spectrum Noise Low-frequency noise integrated circuit noise Analytical models low-frequency noise analysis trap simulation circuit simulation RTS noise integrated circuit modelling switched MOSFET circuit nonstationary trap noise Circuits Measurement Integrated circuits Gates (Electronics) Voltage Metal oxide semiconductor field effect transistors Innovations Semiconductor chips Usage Mathematical optimization Demir, Alper oth Enthalten in IEEE transactions on circuits and systems / 1 New York, NY : Institute of Electrical and Electronics Engineers, 1992 62(2015), 4, Seite 929-937 (DE-627)131043080 (DE-600)1100194-X (DE-576)02804679X 1549-8328 nnns volume:62 year:2015 number:4 pages:929-937 http://dx.doi.org/10.1109/TCSI.2015.2388834 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452 http://search.proquest.com/docview/1685194626 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_30 GBV_ILN_70 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2059 AR 62 2015 4 929-937 |
| allfields_unstemmed |
10.1109/TCSI.2015.2388834 doi PQ20160617 (DE-627)OLC195925314X (DE-599)GBVOLC195925314X (PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0 (KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit DE-627 ger DE-627 rakwb eng 000 620 DNB Mahmutoglu, Ahmet Gokcen verfasserin aut Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. Switching circuits Logic gates Transistors circuit simulator nonstationary noise noise analysis Switches Integrated circuit modeling compact MOSFET model MOSFET circuits correct spectrum expression single trap noise spectrum Noise Low-frequency noise integrated circuit noise Analytical models low-frequency noise analysis trap simulation circuit simulation RTS noise integrated circuit modelling switched MOSFET circuit nonstationary trap noise Circuits Measurement Integrated circuits Gates (Electronics) Voltage Metal oxide semiconductor field effect transistors Innovations Semiconductor chips Usage Mathematical optimization Demir, Alper oth Enthalten in IEEE transactions on circuits and systems / 1 New York, NY : Institute of Electrical and Electronics Engineers, 1992 62(2015), 4, Seite 929-937 (DE-627)131043080 (DE-600)1100194-X (DE-576)02804679X 1549-8328 nnns volume:62 year:2015 number:4 pages:929-937 http://dx.doi.org/10.1109/TCSI.2015.2388834 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452 http://search.proquest.com/docview/1685194626 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_30 GBV_ILN_70 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2059 AR 62 2015 4 929-937 |
| allfieldsGer |
10.1109/TCSI.2015.2388834 doi PQ20160617 (DE-627)OLC195925314X (DE-599)GBVOLC195925314X (PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0 (KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit DE-627 ger DE-627 rakwb eng 000 620 DNB Mahmutoglu, Ahmet Gokcen verfasserin aut Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. Switching circuits Logic gates Transistors circuit simulator nonstationary noise noise analysis Switches Integrated circuit modeling compact MOSFET model MOSFET circuits correct spectrum expression single trap noise spectrum Noise Low-frequency noise integrated circuit noise Analytical models low-frequency noise analysis trap simulation circuit simulation RTS noise integrated circuit modelling switched MOSFET circuit nonstationary trap noise Circuits Measurement Integrated circuits Gates (Electronics) Voltage Metal oxide semiconductor field effect transistors Innovations Semiconductor chips Usage Mathematical optimization Demir, Alper oth Enthalten in IEEE transactions on circuits and systems / 1 New York, NY : Institute of Electrical and Electronics Engineers, 1992 62(2015), 4, Seite 929-937 (DE-627)131043080 (DE-600)1100194-X (DE-576)02804679X 1549-8328 nnns volume:62 year:2015 number:4 pages:929-937 http://dx.doi.org/10.1109/TCSI.2015.2388834 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452 http://search.proquest.com/docview/1685194626 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_30 GBV_ILN_70 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2059 AR 62 2015 4 929-937 |
| allfieldsSound |
10.1109/TCSI.2015.2388834 doi PQ20160617 (DE-627)OLC195925314X (DE-599)GBVOLC195925314X (PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0 (KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit DE-627 ger DE-627 rakwb eng 000 620 DNB Mahmutoglu, Ahmet Gokcen verfasserin aut Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. Switching circuits Logic gates Transistors circuit simulator nonstationary noise noise analysis Switches Integrated circuit modeling compact MOSFET model MOSFET circuits correct spectrum expression single trap noise spectrum Noise Low-frequency noise integrated circuit noise Analytical models low-frequency noise analysis trap simulation circuit simulation RTS noise integrated circuit modelling switched MOSFET circuit nonstationary trap noise Circuits Measurement Integrated circuits Gates (Electronics) Voltage Metal oxide semiconductor field effect transistors Innovations Semiconductor chips Usage Mathematical optimization Demir, Alper oth Enthalten in IEEE transactions on circuits and systems / 1 New York, NY : Institute of Electrical and Electronics Engineers, 1992 62(2015), 4, Seite 929-937 (DE-627)131043080 (DE-600)1100194-X (DE-576)02804679X 1549-8328 nnns volume:62 year:2015 number:4 pages:929-937 http://dx.doi.org/10.1109/TCSI.2015.2388834 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452 http://search.proquest.com/docview/1685194626 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_30 GBV_ILN_70 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2059 AR 62 2015 4 929-937 |
| language |
English |
| source |
Enthalten in IEEE transactions on circuits and systems / 1 62(2015), 4, Seite 929-937 volume:62 year:2015 number:4 pages:929-937 |
| sourceStr |
Enthalten in IEEE transactions on circuits and systems / 1 62(2015), 4, Seite 929-937 volume:62 year:2015 number:4 pages:929-937 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Switching circuits Logic gates Transistors circuit simulator nonstationary noise noise analysis Switches Integrated circuit modeling compact MOSFET model MOSFET circuits correct spectrum expression single trap noise spectrum Noise Low-frequency noise integrated circuit noise Analytical models low-frequency noise analysis trap simulation circuit simulation RTS noise integrated circuit modelling switched MOSFET circuit nonstationary trap noise Circuits Measurement Integrated circuits Gates (Electronics) Voltage Metal oxide semiconductor field effect transistors Innovations Semiconductor chips Usage Mathematical optimization |
| dewey-raw |
000 |
| isfreeaccess_bool |
false |
| container_title |
IEEE transactions on circuits and systems / 1 |
| authorswithroles_txt_mv |
Mahmutoglu, Ahmet Gokcen @@aut@@ Demir, Alper @@oth@@ |
| publishDateDaySort_date |
2015-01-01T00:00:00Z |
| hierarchy_top_id |
131043080 |
| dewey-sort |
0 |
| id |
OLC195925314X |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC195925314X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210715225532.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TCSI.2015.2388834</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC195925314X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC195925314X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">000</subfield><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mahmutoglu, Ahmet Gokcen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switching circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Logic gates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">circuit simulator</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonstationary noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">noise analysis</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switches</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuit modeling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">compact MOSFET model</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MOSFET circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">correct spectrum expression</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single trap noise spectrum</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Low-frequency noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">integrated circuit noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Analytical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-frequency noise analysis</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">trap simulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">circuit simulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">RTS noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">integrated circuit modelling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">switched MOSFET circuit</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonstationary trap noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Measurement</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gates (Electronics)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Voltage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field effect transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Innovations</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor chips</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Usage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematical optimization</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Demir, Alper</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on circuits and systems / 1</subfield><subfield code="d">New York, NY : Institute of Electrical and Electronics Engineers, 1992</subfield><subfield code="g">62(2015), 4, Seite 929-937</subfield><subfield code="w">(DE-627)131043080</subfield><subfield code="w">(DE-600)1100194-X</subfield><subfield code="w">(DE-576)02804679X</subfield><subfield code="x">1549-8328</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:4</subfield><subfield code="g">pages:929-937</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TCSI.2015.2388834</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://search.proquest.com/docview/1685194626</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-MAT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="j">2015</subfield><subfield code="e">4</subfield><subfield code="h">929-937</subfield></datafield></record></collection>
|
| author |
Mahmutoglu, Ahmet Gokcen |
| spellingShingle |
Mahmutoglu, Ahmet Gokcen ddc 000 misc Switching circuits misc Logic gates misc Transistors misc circuit simulator misc nonstationary noise misc noise analysis misc Switches misc Integrated circuit modeling misc compact MOSFET model misc MOSFET circuits misc correct spectrum expression misc single trap noise spectrum misc Noise misc Low-frequency noise misc integrated circuit noise misc Analytical models misc low-frequency noise analysis misc trap simulation misc circuit simulation misc RTS noise misc integrated circuit modelling misc switched MOSFET circuit misc nonstationary trap noise misc Circuits misc Measurement misc Integrated circuits misc Gates (Electronics) misc Voltage misc Metal oxide semiconductor field effect transistors misc Innovations misc Semiconductor chips misc Usage misc Mathematical optimization Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified |
| authorStr |
Mahmutoglu, Ahmet Gokcen |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)131043080 |
| format |
Article |
| dewey-ones |
000 - Computer science, information & general works 620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
1549-8328 |
| topic_title |
000 620 DNB Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified Switching circuits Logic gates Transistors circuit simulator nonstationary noise noise analysis Switches Integrated circuit modeling compact MOSFET model MOSFET circuits correct spectrum expression single trap noise spectrum Noise Low-frequency noise integrated circuit noise Analytical models low-frequency noise analysis trap simulation circuit simulation RTS noise integrated circuit modelling switched MOSFET circuit nonstationary trap noise Circuits Measurement Integrated circuits Gates (Electronics) Voltage Metal oxide semiconductor field effect transistors Innovations Semiconductor chips Usage Mathematical optimization |
| topic |
ddc 000 misc Switching circuits misc Logic gates misc Transistors misc circuit simulator misc nonstationary noise misc noise analysis misc Switches misc Integrated circuit modeling misc compact MOSFET model misc MOSFET circuits misc correct spectrum expression misc single trap noise spectrum misc Noise misc Low-frequency noise misc integrated circuit noise misc Analytical models misc low-frequency noise analysis misc trap simulation misc circuit simulation misc RTS noise misc integrated circuit modelling misc switched MOSFET circuit misc nonstationary trap noise misc Circuits misc Measurement misc Integrated circuits misc Gates (Electronics) misc Voltage misc Metal oxide semiconductor field effect transistors misc Innovations misc Semiconductor chips misc Usage misc Mathematical optimization |
| topic_unstemmed |
ddc 000 misc Switching circuits misc Logic gates misc Transistors misc circuit simulator misc nonstationary noise misc noise analysis misc Switches misc Integrated circuit modeling misc compact MOSFET model misc MOSFET circuits misc correct spectrum expression misc single trap noise spectrum misc Noise misc Low-frequency noise misc integrated circuit noise misc Analytical models misc low-frequency noise analysis misc trap simulation misc circuit simulation misc RTS noise misc integrated circuit modelling misc switched MOSFET circuit misc nonstationary trap noise misc Circuits misc Measurement misc Integrated circuits misc Gates (Electronics) misc Voltage misc Metal oxide semiconductor field effect transistors misc Innovations misc Semiconductor chips misc Usage misc Mathematical optimization |
| topic_browse |
ddc 000 misc Switching circuits misc Logic gates misc Transistors misc circuit simulator misc nonstationary noise misc noise analysis misc Switches misc Integrated circuit modeling misc compact MOSFET model misc MOSFET circuits misc correct spectrum expression misc single trap noise spectrum misc Noise misc Low-frequency noise misc integrated circuit noise misc Analytical models misc low-frequency noise analysis misc trap simulation misc circuit simulation misc RTS noise misc integrated circuit modelling misc switched MOSFET circuit misc nonstationary trap noise misc Circuits misc Measurement misc Integrated circuits misc Gates (Electronics) misc Voltage misc Metal oxide semiconductor field effect transistors misc Innovations misc Semiconductor chips misc Usage misc Mathematical optimization |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| author2_variant |
a d ad |
| hierarchy_parent_title |
IEEE transactions on circuits and systems / 1 |
| hierarchy_parent_id |
131043080 |
| dewey-tens |
000 - Computer science, knowledge & systems 620 - Engineering |
| hierarchy_top_title |
IEEE transactions on circuits and systems / 1 |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)131043080 (DE-600)1100194-X (DE-576)02804679X |
| title |
Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified |
| ctrlnum |
(DE-627)OLC195925314X (DE-599)GBVOLC195925314X (PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0 (KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit |
| title_full |
Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified |
| author_sort |
Mahmutoglu, Ahmet Gokcen |
| journal |
IEEE transactions on circuits and systems / 1 |
| journalStr |
IEEE transactions on circuits and systems / 1 |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
000 - Computer science, information & general works 600 - Technology |
| recordtype |
marc |
| publishDateSort |
2015 |
| contenttype_str_mv |
txt |
| container_start_page |
929 |
| author_browse |
Mahmutoglu, Ahmet Gokcen |
| container_volume |
62 |
| class |
000 620 DNB |
| format_se |
Aufsätze |
| author-letter |
Mahmutoglu, Ahmet Gokcen |
| doi_str_mv |
10.1109/TCSI.2015.2388834 |
| dewey-full |
000 620 |
| title_sort |
analysis of low-frequency noise in switched mosfet circuits: revisited and clarified |
| title_auth |
Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified |
| abstract |
Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. |
| abstractGer |
Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. |
| abstract_unstemmed |
Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_30 GBV_ILN_70 GBV_ILN_2002 GBV_ILN_2005 GBV_ILN_2059 |
| container_issue |
4 |
| title_short |
Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified |
| url |
http://dx.doi.org/10.1109/TCSI.2015.2388834 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452 http://search.proquest.com/docview/1685194626 |
| remote_bool |
false |
| author2 |
Demir, Alper |
| author2Str |
Demir, Alper |
| ppnlink |
131043080 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth |
| doi_str |
10.1109/TCSI.2015.2388834 |
| up_date |
2024-07-03T16:30:04.349Z |
| _version_ |
1803576100110991360 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC195925314X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210715225532.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TCSI.2015.2388834</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC195925314X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC195925314X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c2351-925f65aed62bc231181c97cfbd96e33ffb6ba131eafc7283ee81ae219e99294f0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0213966920150000062000400929analysisoflowfrequencynoiseinswitchedmosfetcircuit</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">000</subfield><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mahmutoglu, Ahmet Gokcen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Analysis of Low-Frequency Noise in Switched MOSFET Circuits: Revisited and Clarified</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. Analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. In this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. The idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switching circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Logic gates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">circuit simulator</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonstationary noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">noise analysis</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switches</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuit modeling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">compact MOSFET model</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MOSFET circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">correct spectrum expression</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single trap noise spectrum</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Low-frequency noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">integrated circuit noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Analytical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-frequency noise analysis</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">trap simulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">circuit simulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">RTS noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">integrated circuit modelling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">switched MOSFET circuit</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nonstationary trap noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Measurement</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gates (Electronics)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Voltage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductor field effect transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Innovations</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor chips</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Usage</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematical optimization</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Demir, Alper</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on circuits and systems / 1</subfield><subfield code="d">New York, NY : Institute of Electrical and Electronics Engineers, 1992</subfield><subfield code="g">62(2015), 4, Seite 929-937</subfield><subfield code="w">(DE-627)131043080</subfield><subfield code="w">(DE-600)1100194-X</subfield><subfield code="w">(DE-576)02804679X</subfield><subfield code="x">1549-8328</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:4</subfield><subfield code="g">pages:929-937</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TCSI.2015.2388834</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7058452</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://search.proquest.com/docview/1685194626</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-MAT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_30</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2002</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="j">2015</subfield><subfield code="e">4</subfield><subfield code="h">929-937</subfield></datafield></record></collection>
|
| score |
7.399987 |