An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices
In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem c...
Ausführliche Beschreibung
Autor*in: |
Daliento, Santolo [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2015 |
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Rechteinformationen: |
Nutzungsrecht: Copyright © 2013 John Wiley & Sons, Ltd. |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Progress in photovoltaics - Chichester : Wiley, 1993, 23(2015), 2, Seite 194-200 |
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Übergeordnetes Werk: |
volume:23 ; year:2015 ; number:2 ; pages:194-200 |
Links: |
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DOI / URN: |
10.1002/pip.2414 |
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Katalog-ID: |
OLC1959510193 |
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520 | |a In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. | ||
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10.1002/pip.2414 doi PQ20160617 (DE-627)OLC1959510193 (DE-599)GBVOLC1959510193 (PRQ)p2422-d4ee767ff8d843055618c480d63dd4baea60bd69b57b5d7484bb0a3ede988643 (KEY)0223466120150000023000200194approachtothemeasurementofshuntresistanceofindivid DE-627 ger DE-627 rakwb eng 690 DNB Daliento, Santolo verfasserin aut An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. Nutzungsrecht: Copyright © 2013 John Wiley & Sons, Ltd. solar spectrum numerical simulation LED tandem cells shunt resistance d'Alessandro, Vincenzo oth Guerriero, Pierluigi oth Tari, Orlando oth Enthalten in Progress in photovoltaics Chichester : Wiley, 1993 23(2015), 2, Seite 194-200 (DE-627)165670185 (DE-600)1149870-5 (DE-576)053356616 1062-7995 nnns volume:23 year:2015 number:2 pages:194-200 http://dx.doi.org/10.1002/pip.2414 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pip.2414/abstract http://search.proquest.com/docview/1645433710 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-UMW SSG-OLC-ARC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_118 AR 23 2015 2 194-200 |
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10.1002/pip.2414 doi PQ20160617 (DE-627)OLC1959510193 (DE-599)GBVOLC1959510193 (PRQ)p2422-d4ee767ff8d843055618c480d63dd4baea60bd69b57b5d7484bb0a3ede988643 (KEY)0223466120150000023000200194approachtothemeasurementofshuntresistanceofindivid DE-627 ger DE-627 rakwb eng 690 DNB Daliento, Santolo verfasserin aut An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. Nutzungsrecht: Copyright © 2013 John Wiley & Sons, Ltd. solar spectrum numerical simulation LED tandem cells shunt resistance d'Alessandro, Vincenzo oth Guerriero, Pierluigi oth Tari, Orlando oth Enthalten in Progress in photovoltaics Chichester : Wiley, 1993 23(2015), 2, Seite 194-200 (DE-627)165670185 (DE-600)1149870-5 (DE-576)053356616 1062-7995 nnns volume:23 year:2015 number:2 pages:194-200 http://dx.doi.org/10.1002/pip.2414 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pip.2414/abstract http://search.proquest.com/docview/1645433710 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-UMW SSG-OLC-ARC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_118 AR 23 2015 2 194-200 |
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10.1002/pip.2414 doi PQ20160617 (DE-627)OLC1959510193 (DE-599)GBVOLC1959510193 (PRQ)p2422-d4ee767ff8d843055618c480d63dd4baea60bd69b57b5d7484bb0a3ede988643 (KEY)0223466120150000023000200194approachtothemeasurementofshuntresistanceofindivid DE-627 ger DE-627 rakwb eng 690 DNB Daliento, Santolo verfasserin aut An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. Nutzungsrecht: Copyright © 2013 John Wiley & Sons, Ltd. solar spectrum numerical simulation LED tandem cells shunt resistance d'Alessandro, Vincenzo oth Guerriero, Pierluigi oth Tari, Orlando oth Enthalten in Progress in photovoltaics Chichester : Wiley, 1993 23(2015), 2, Seite 194-200 (DE-627)165670185 (DE-600)1149870-5 (DE-576)053356616 1062-7995 nnns volume:23 year:2015 number:2 pages:194-200 http://dx.doi.org/10.1002/pip.2414 Volltext http://onlinelibrary.wiley.com/doi/10.1002/pip.2414/abstract http://search.proquest.com/docview/1645433710 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-UMW SSG-OLC-ARC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_118 AR 23 2015 2 194-200 |
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approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices |
title_auth |
An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices |
abstract |
In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. |
abstractGer |
In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. |
abstract_unstemmed |
In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. |
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container_issue |
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title_short |
An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices |
url |
http://dx.doi.org/10.1002/pip.2414 http://onlinelibrary.wiley.com/doi/10.1002/pip.2414/abstract http://search.proquest.com/docview/1645433710 |
remote_bool |
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author2 |
d'Alessandro, Vincenzo Guerriero, Pierluigi Tari, Orlando |
author2Str |
d'Alessandro, Vincenzo Guerriero, Pierluigi Tari, Orlando |
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doi_str |
10.1002/pip.2414 |
up_date |
2024-07-03T17:37:06.807Z |
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