An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices
In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem c...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Daliento, Santolo [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Rechteinformationen: |
Nutzungsrecht: Copyright © 2013 John Wiley & Sons, Ltd. |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Progress in photovoltaics - Chichester : Wiley, 1993, 23(2015), 2, Seite 194-200 |
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| Übergeordnetes Werk: |
volume:23 ; year:2015 ; number:2 ; pages:194-200 |
| Links: |
|---|
| DOI / URN: |
10.1002/pip.2414 |
|---|
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| 520 | |a In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. | ||
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Daliento, Santolo |
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Daliento, Santolo |
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approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices |
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An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices |
| abstract |
In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. |
| abstractGer |
In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. |
| abstract_unstemmed |
In this paper, the selective illumination approach is adopted to separately extract the shunt resistance of the individual subcells belonging to a tandem cell. The method relies on simple theoretical considerations and is based on the measurement of the current–voltage characteristic of the tandem cell by alternately keeping one of the subcells under dark conditions. Numerical simulations are employed to support the reliability of the technique, which is experimentally tested on micromorph devices deposited onto glass covered by a V‐shaped transparent conducting oxide and subject to different thermal treatments. Copyright © 2013 John Wiley & Sons, Ltd. A procedure based on selective illumination and relying on simple theoretical considerations is proposed to separately extract the shunt resistance of the top and bottom subcells embedded in a tandem cell. The method involves the measurement of the current–voltage characteristic of the tandem device by alternately keeping one of the subcells under dark conditions and is supported by numerical simulations and experimental data. The approach can be used for quality control, failure diagnostics, and modeling purposes. |
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| title_short |
An approach to the measurement of shunt resistance of individual subcells in thin‐film tandem devices |
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http://dx.doi.org/10.1002/pip.2414 http://onlinelibrary.wiley.com/doi/10.1002/pip.2414/abstract http://search.proquest.com/docview/1645433710 |
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d'Alessandro, Vincenzo Guerriero, Pierluigi Tari, Orlando |
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