A 50-59 GHz CMOS Injection Locking Power Amplifier

The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA u...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Jiafu Lin [verfasserIn] Chirn Chye Boon Xiang Yi Guangyin Feng

Format:	Artikel
Sprache:	Englisch

Erschienen:	2015

Schlagwörter:	size 65 nm efficiency 16.1 percent narrow injection locking bandwidth PAE injection locking complementary metal-oxide-semiconductor injection locked amplifiers injection-locked power amplifier Injection-locked oscillators power amplifiers V-band injection locking range ILPA loading effect CMOS technology Bandwidth power added efficiency (PAE) low power Logic gates Gain CMOS integrated circuits power added efficiency load-to-tank pulling CMOS power amplifier (PA) millimeter-wave frequency millimetre wave amplifiers Power generation frequency 50 GHz to 59 GHz

Übergeordnetes Werk:	Enthalten in: IEEE microwave and wireless components letters - New York, NY : Inst., 1991, 25(2015), 1, Seite 52-54
Übergeordnetes Werk:	volume:25 ; year:2015 ; number:1 ; pages:52-54

Links:	Volltext Link aufrufen Link aufrufen

DOI / URN:	10.1109/LMWC.2014.2369960

Katalog-ID:	OLC1960849883

Internformat


LEADER	01000caa a2200265 4500
001	OLC1960849883
003	DE-627
005	20220217053111.0
007	tu
008	160206s2015 xx \|\|\|\|\| 00\| \|\|eng c
024	7		\|a 10.1109/LMWC.2014.2369960 \|2 doi
028	5	2	\|a PQ20160617
035			\|a (DE-627)OLC1960849883
035			\|a (DE-599)GBVOLC1960849883
035			\|a (PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640
035			\|a (KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 620 \|q DNB
084			\|a 53.82 \|2 bkl
100	0		\|a Jiafu Lin \|e verfasserin \|4 aut
245	1	2	\|a A 50-59 GHz CMOS Injection Locking Power Amplifier
264		1	\|c 2015
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
520			\|a The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads.
650		4	\|a size 65 nm
650		4	\|a efficiency 16.1 percent
650		4	\|a narrow injection locking bandwidth
650		4	\|a PAE
650		4	\|a injection locking
650		4	\|a complementary metal-oxide-semiconductor
650		4	\|a injection locked amplifiers
650		4	\|a injection-locked power amplifier
650		4	\|a Injection-locked oscillators
650		4	\|a power amplifiers
650		4	\|a V-band
650		4	\|a injection locking range
650		4	\|a ILPA
650		4	\|a loading effect
650		4	\|a CMOS technology
650		4	\|a Bandwidth
650		4	\|a power added efficiency (PAE)
650		4	\|a low power
650		4	\|a Logic gates
650		4	\|a Gain
650		4	\|a CMOS integrated circuits
650		4	\|a power added efficiency
650		4	\|a load-to-tank pulling
650		4	\|a CMOS power amplifier (PA)
650		4	\|a millimeter-wave frequency
650		4	\|a millimetre wave amplifiers
650		4	\|a Power generation
650		4	\|a frequency 50 GHz to 59 GHz
700	0		\|a Chirn Chye Boon \|4 oth
700	0		\|a Xiang Yi \|4 oth
700	0		\|a Guangyin Feng \|4 oth
773	0	8	\|i Enthalten in \|t IEEE microwave and wireless components letters \|d New York, NY : Inst., 1991 \|g 25(2015), 1, Seite 52-54 \|w (DE-627)130939455 \|w (DE-600)1059336-6 \|w (DE-576)025091948 \|x 1051-8207 \|7 nnns
773	1	8	\|g volume:25 \|g year:2015 \|g number:1 \|g pages:52-54
856	4	1	\|u http://dx.doi.org/10.1109/LMWC.2014.2369960 \|3 Volltext
856	4	2	\|u http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001
856	4	2	\|u http://search.proquest.com/docview/1644056329
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_11
912			\|a GBV_ILN_70
912			\|a GBV_ILN_170
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2016
912			\|a GBV_ILN_4318
936	b	k	\|a 53.82 \|q AVZ
951			\|a AR
952			\|d 25 \|j 2015 \|e 1 \|h 52-54

Indexfelder

author_variant	j l jl
matchkey_str	article:10518207:2015----::55gzmsnetolcigo
hierarchy_sort_str	2015
bklnumber	53.82
publishDate	2015
allfields	10.1109/LMWC.2014.2369960 doi PQ20160617 (DE-627)OLC1960849883 (DE-599)GBVOLC1960849883 (PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640 (KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier DE-627 ger DE-627 rakwb eng 620 DNB 53.82 bkl Jiafu Lin verfasserin aut A 50-59 GHz CMOS Injection Locking Power Amplifier 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads. size 65 nm efficiency 16.1 percent narrow injection locking bandwidth PAE injection locking complementary metal-oxide-semiconductor injection locked amplifiers injection-locked power amplifier Injection-locked oscillators power amplifiers V-band injection locking range ILPA loading effect CMOS technology Bandwidth power added efficiency (PAE) low power Logic gates Gain CMOS integrated circuits power added efficiency load-to-tank pulling CMOS power amplifier (PA) millimeter-wave frequency millimetre wave amplifiers Power generation frequency 50 GHz to 59 GHz Chirn Chye Boon oth Xiang Yi oth Guangyin Feng oth Enthalten in IEEE microwave and wireless components letters New York, NY : Inst., 1991 25(2015), 1, Seite 52-54 (DE-627)130939455 (DE-600)1059336-6 (DE-576)025091948 1051-8207 nnns volume:25 year:2015 number:1 pages:52-54 http://dx.doi.org/10.1109/LMWC.2014.2369960 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001 http://search.proquest.com/docview/1644056329 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4318 53.82 AVZ AR 25 2015 1 52-54
spelling	10.1109/LMWC.2014.2369960 doi PQ20160617 (DE-627)OLC1960849883 (DE-599)GBVOLC1960849883 (PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640 (KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier DE-627 ger DE-627 rakwb eng 620 DNB 53.82 bkl Jiafu Lin verfasserin aut A 50-59 GHz CMOS Injection Locking Power Amplifier 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads. size 65 nm efficiency 16.1 percent narrow injection locking bandwidth PAE injection locking complementary metal-oxide-semiconductor injection locked amplifiers injection-locked power amplifier Injection-locked oscillators power amplifiers V-band injection locking range ILPA loading effect CMOS technology Bandwidth power added efficiency (PAE) low power Logic gates Gain CMOS integrated circuits power added efficiency load-to-tank pulling CMOS power amplifier (PA) millimeter-wave frequency millimetre wave amplifiers Power generation frequency 50 GHz to 59 GHz Chirn Chye Boon oth Xiang Yi oth Guangyin Feng oth Enthalten in IEEE microwave and wireless components letters New York, NY : Inst., 1991 25(2015), 1, Seite 52-54 (DE-627)130939455 (DE-600)1059336-6 (DE-576)025091948 1051-8207 nnns volume:25 year:2015 number:1 pages:52-54 http://dx.doi.org/10.1109/LMWC.2014.2369960 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001 http://search.proquest.com/docview/1644056329 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4318 53.82 AVZ AR 25 2015 1 52-54
allfields_unstemmed	10.1109/LMWC.2014.2369960 doi PQ20160617 (DE-627)OLC1960849883 (DE-599)GBVOLC1960849883 (PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640 (KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier DE-627 ger DE-627 rakwb eng 620 DNB 53.82 bkl Jiafu Lin verfasserin aut A 50-59 GHz CMOS Injection Locking Power Amplifier 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads. size 65 nm efficiency 16.1 percent narrow injection locking bandwidth PAE injection locking complementary metal-oxide-semiconductor injection locked amplifiers injection-locked power amplifier Injection-locked oscillators power amplifiers V-band injection locking range ILPA loading effect CMOS technology Bandwidth power added efficiency (PAE) low power Logic gates Gain CMOS integrated circuits power added efficiency load-to-tank pulling CMOS power amplifier (PA) millimeter-wave frequency millimetre wave amplifiers Power generation frequency 50 GHz to 59 GHz Chirn Chye Boon oth Xiang Yi oth Guangyin Feng oth Enthalten in IEEE microwave and wireless components letters New York, NY : Inst., 1991 25(2015), 1, Seite 52-54 (DE-627)130939455 (DE-600)1059336-6 (DE-576)025091948 1051-8207 nnns volume:25 year:2015 number:1 pages:52-54 http://dx.doi.org/10.1109/LMWC.2014.2369960 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001 http://search.proquest.com/docview/1644056329 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4318 53.82 AVZ AR 25 2015 1 52-54
allfieldsGer	10.1109/LMWC.2014.2369960 doi PQ20160617 (DE-627)OLC1960849883 (DE-599)GBVOLC1960849883 (PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640 (KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier DE-627 ger DE-627 rakwb eng 620 DNB 53.82 bkl Jiafu Lin verfasserin aut A 50-59 GHz CMOS Injection Locking Power Amplifier 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads. size 65 nm efficiency 16.1 percent narrow injection locking bandwidth PAE injection locking complementary metal-oxide-semiconductor injection locked amplifiers injection-locked power amplifier Injection-locked oscillators power amplifiers V-band injection locking range ILPA loading effect CMOS technology Bandwidth power added efficiency (PAE) low power Logic gates Gain CMOS integrated circuits power added efficiency load-to-tank pulling CMOS power amplifier (PA) millimeter-wave frequency millimetre wave amplifiers Power generation frequency 50 GHz to 59 GHz Chirn Chye Boon oth Xiang Yi oth Guangyin Feng oth Enthalten in IEEE microwave and wireless components letters New York, NY : Inst., 1991 25(2015), 1, Seite 52-54 (DE-627)130939455 (DE-600)1059336-6 (DE-576)025091948 1051-8207 nnns volume:25 year:2015 number:1 pages:52-54 http://dx.doi.org/10.1109/LMWC.2014.2369960 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001 http://search.proquest.com/docview/1644056329 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4318 53.82 AVZ AR 25 2015 1 52-54
allfieldsSound	10.1109/LMWC.2014.2369960 doi PQ20160617 (DE-627)OLC1960849883 (DE-599)GBVOLC1960849883 (PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640 (KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier DE-627 ger DE-627 rakwb eng 620 DNB 53.82 bkl Jiafu Lin verfasserin aut A 50-59 GHz CMOS Injection Locking Power Amplifier 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads. size 65 nm efficiency 16.1 percent narrow injection locking bandwidth PAE injection locking complementary metal-oxide-semiconductor injection locked amplifiers injection-locked power amplifier Injection-locked oscillators power amplifiers V-band injection locking range ILPA loading effect CMOS technology Bandwidth power added efficiency (PAE) low power Logic gates Gain CMOS integrated circuits power added efficiency load-to-tank pulling CMOS power amplifier (PA) millimeter-wave frequency millimetre wave amplifiers Power generation frequency 50 GHz to 59 GHz Chirn Chye Boon oth Xiang Yi oth Guangyin Feng oth Enthalten in IEEE microwave and wireless components letters New York, NY : Inst., 1991 25(2015), 1, Seite 52-54 (DE-627)130939455 (DE-600)1059336-6 (DE-576)025091948 1051-8207 nnns volume:25 year:2015 number:1 pages:52-54 http://dx.doi.org/10.1109/LMWC.2014.2369960 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001 http://search.proquest.com/docview/1644056329 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4318 53.82 AVZ AR 25 2015 1 52-54
language	English
source	Enthalten in IEEE microwave and wireless components letters 25(2015), 1, Seite 52-54 volume:25 year:2015 number:1 pages:52-54
sourceStr	Enthalten in IEEE microwave and wireless components letters 25(2015), 1, Seite 52-54 volume:25 year:2015 number:1 pages:52-54
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	size 65 nm efficiency 16.1 percent narrow injection locking bandwidth PAE injection locking complementary metal-oxide-semiconductor injection locked amplifiers injection-locked power amplifier Injection-locked oscillators power amplifiers V-band injection locking range ILPA loading effect CMOS technology Bandwidth power added efficiency (PAE) low power Logic gates Gain CMOS integrated circuits power added efficiency load-to-tank pulling CMOS power amplifier (PA) millimeter-wave frequency millimetre wave amplifiers Power generation frequency 50 GHz to 59 GHz
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE microwave and wireless components letters
authorswithroles_txt_mv	Jiafu Lin @@aut@@ Chirn Chye Boon @@oth@@ Xiang Yi @@oth@@ Guangyin Feng @@oth@@
publishDateDaySort_date	2015-01-01T00:00:00Z
hierarchy_top_id	130939455
dewey-sort	3620
id	OLC1960849883
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1960849883</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220217053111.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/LMWC.2014.2369960</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1960849883</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1960849883</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.82</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jiafu Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="2"><subfield code="a">A 50-59 GHz CMOS Injection Locking Power Amplifier</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">size 65 nm</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">efficiency 16.1 percent</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">narrow injection locking bandwidth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PAE</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection locking</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">complementary metal-oxide-semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection locked amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection-locked power amplifier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Injection-locked oscillators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">power amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">V-band</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection locking range</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">ILPA</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">loading effect</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS technology</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bandwidth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">power added efficiency (PAE)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low power</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Logic gates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gain</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">power added efficiency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">load-to-tank pulling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS power amplifier (PA)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">millimeter-wave frequency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">millimetre wave amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Power generation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">frequency 50 GHz to 59 GHz</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Chirn Chye Boon</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiang Yi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Guangyin Feng</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE microwave and wireless components letters</subfield><subfield code="d">New York, NY : Inst., 1991</subfield><subfield code="g">25(2015), 1, Seite 52-54</subfield><subfield code="w">(DE-627)130939455</subfield><subfield code="w">(DE-600)1059336-6</subfield><subfield code="w">(DE-576)025091948</subfield><subfield code="x">1051-8207</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:25</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:52-54</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/LMWC.2014.2369960</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://search.proquest.com/docview/1644056329</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.82</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">25</subfield><subfield code="j">2015</subfield><subfield code="e">1</subfield><subfield code="h">52-54</subfield></datafield></record></collection>
author	Jiafu Lin
spellingShingle	Jiafu Lin ddc 620 bkl 53.82 misc size 65 nm misc efficiency 16.1 percent misc narrow injection locking bandwidth misc PAE misc injection locking misc complementary metal-oxide-semiconductor misc injection locked amplifiers misc injection-locked power amplifier misc Injection-locked oscillators misc power amplifiers misc V-band misc injection locking range misc ILPA misc loading effect misc CMOS technology misc Bandwidth misc power added efficiency (PAE) misc low power misc Logic gates misc Gain misc CMOS integrated circuits misc power added efficiency misc load-to-tank pulling misc CMOS power amplifier (PA) misc millimeter-wave frequency misc millimetre wave amplifiers misc Power generation misc frequency 50 GHz to 59 GHz A 50-59 GHz CMOS Injection Locking Power Amplifier
authorStr	Jiafu Lin
ppnlink_with_tag_str_mv	@@773@@(DE-627)130939455
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	1051-8207
topic_title	620 DNB 53.82 bkl A 50-59 GHz CMOS Injection Locking Power Amplifier size 65 nm efficiency 16.1 percent narrow injection locking bandwidth PAE injection locking complementary metal-oxide-semiconductor injection locked amplifiers injection-locked power amplifier Injection-locked oscillators power amplifiers V-band injection locking range ILPA loading effect CMOS technology Bandwidth power added efficiency (PAE) low power Logic gates Gain CMOS integrated circuits power added efficiency load-to-tank pulling CMOS power amplifier (PA) millimeter-wave frequency millimetre wave amplifiers Power generation frequency 50 GHz to 59 GHz
topic	ddc 620 bkl 53.82 misc size 65 nm misc efficiency 16.1 percent misc narrow injection locking bandwidth misc PAE misc injection locking misc complementary metal-oxide-semiconductor misc injection locked amplifiers misc injection-locked power amplifier misc Injection-locked oscillators misc power amplifiers misc V-band misc injection locking range misc ILPA misc loading effect misc CMOS technology misc Bandwidth misc power added efficiency (PAE) misc low power misc Logic gates misc Gain misc CMOS integrated circuits misc power added efficiency misc load-to-tank pulling misc CMOS power amplifier (PA) misc millimeter-wave frequency misc millimetre wave amplifiers misc Power generation misc frequency 50 GHz to 59 GHz
topic_unstemmed	ddc 620 bkl 53.82 misc size 65 nm misc efficiency 16.1 percent misc narrow injection locking bandwidth misc PAE misc injection locking misc complementary metal-oxide-semiconductor misc injection locked amplifiers misc injection-locked power amplifier misc Injection-locked oscillators misc power amplifiers misc V-band misc injection locking range misc ILPA misc loading effect misc CMOS technology misc Bandwidth misc power added efficiency (PAE) misc low power misc Logic gates misc Gain misc CMOS integrated circuits misc power added efficiency misc load-to-tank pulling misc CMOS power amplifier (PA) misc millimeter-wave frequency misc millimetre wave amplifiers misc Power generation misc frequency 50 GHz to 59 GHz
topic_browse	ddc 620 bkl 53.82 misc size 65 nm misc efficiency 16.1 percent misc narrow injection locking bandwidth misc PAE misc injection locking misc complementary metal-oxide-semiconductor misc injection locked amplifiers misc injection-locked power amplifier misc Injection-locked oscillators misc power amplifiers misc V-band misc injection locking range misc ILPA misc loading effect misc CMOS technology misc Bandwidth misc power added efficiency (PAE) misc low power misc Logic gates misc Gain misc CMOS integrated circuits misc power added efficiency misc load-to-tank pulling misc CMOS power amplifier (PA) misc millimeter-wave frequency misc millimetre wave amplifiers misc Power generation misc frequency 50 GHz to 59 GHz
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	c c b ccb x y xy g f gf
hierarchy_parent_title	IEEE microwave and wireless components letters
hierarchy_parent_id	130939455
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE microwave and wireless components letters
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)130939455 (DE-600)1059336-6 (DE-576)025091948
title	A 50-59 GHz CMOS Injection Locking Power Amplifier
ctrlnum	(DE-627)OLC1960849883 (DE-599)GBVOLC1960849883 (PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640 (KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier
title_full	A 50-59 GHz CMOS Injection Locking Power Amplifier
author_sort	Jiafu Lin
journal	IEEE microwave and wireless components letters
journalStr	IEEE microwave and wireless components letters
lang_code	eng
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2015
contenttype_str_mv	txt
container_start_page	52
author_browse	Jiafu Lin
container_volume	25
class	620 DNB 53.82 bkl
format_se	Aufsätze
author-letter	Jiafu Lin
doi_str_mv	10.1109/LMWC.2014.2369960
dewey-full	620
title_sort	50-59 ghz cmos injection locking power amplifier
title_auth	A 50-59 GHz CMOS Injection Locking Power Amplifier
abstract	The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads.
abstractGer	The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads.
abstract_unstemmed	The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_11 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4318
container_issue	1
title_short	A 50-59 GHz CMOS Injection Locking Power Amplifier
url	http://dx.doi.org/10.1109/LMWC.2014.2369960 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001 http://search.proquest.com/docview/1644056329
remote_bool	false
author2	Chirn Chye Boon Xiang Yi Guangyin Feng
author2Str	Chirn Chye Boon Xiang Yi Guangyin Feng
ppnlink	130939455
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth
doi_str	10.1109/LMWC.2014.2369960
up_date	2024-07-03T22:50:40.374Z
_version_	1803600045408256001
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1960849883</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220217053111.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/LMWC.2014.2369960</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1960849883</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1960849883</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c2648-a80b55cb1aff8819946f4d65fc61453aa07d346adfe1ddaf29907a2882e34640</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)03926400201500000250001000525059ghzcmosinjectionlockingpoweramplifier</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.82</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Jiafu Lin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="2"><subfield code="a">A 50-59 GHz CMOS Injection Locking Power Amplifier</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The injection-locked power amplifier (ILPA) has demonstrated relatively high gain and high efficiency at millimeter-wave frequency. However, their application is still limited by its sensitivity to loading effect and narrow injection locking bandwidth. In this letter, a wide injection locking ILPA using buffered input and output has been proposed and implemented on 65 nm CMOS technology. The buffered input and output can improve the injection locking range and avoid load-to-tank pulling. The measured injection locking range is from 50 GHz to 59 GHz and the peak Power Added Efficiency (PAE) is 16.1% with a maximum output power of 11.39 dBm. Moreover, the die size is merely 260 μm×400 μm excluding pads.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">size 65 nm</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">efficiency 16.1 percent</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">narrow injection locking bandwidth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PAE</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection locking</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">complementary metal-oxide-semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection locked amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection-locked power amplifier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Injection-locked oscillators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">power amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">V-band</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection locking range</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">ILPA</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">loading effect</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS technology</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Bandwidth</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">power added efficiency (PAE)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low power</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Logic gates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gain</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">power added efficiency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">load-to-tank pulling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS power amplifier (PA)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">millimeter-wave frequency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">millimetre wave amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Power generation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">frequency 50 GHz to 59 GHz</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Chirn Chye Boon</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Xiang Yi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Guangyin Feng</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE microwave and wireless components letters</subfield><subfield code="d">New York, NY : Inst., 1991</subfield><subfield code="g">25(2015), 1, Seite 52-54</subfield><subfield code="w">(DE-627)130939455</subfield><subfield code="w">(DE-600)1059336-6</subfield><subfield code="w">(DE-576)025091948</subfield><subfield code="x">1051-8207</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:25</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:52-54</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/LMWC.2014.2369960</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6978001</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://search.proquest.com/docview/1644056329</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4318</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.82</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">25</subfield><subfield code="j">2015</subfield><subfield code="e">1</subfield><subfield code="h">52-54</subfield></datafield></record></collection>
score	7.4021244

Nicht das Richtige dabei?

Schreiben Sie uns!

A 50-59 GHz CMOS Injection Locking Power Amplifier

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?