Single-resonator dual-frequency AIN-on-Si MEMS oscillators
This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA)...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lavasani, Hossein Miri [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2015 |
|---|
| Schlagwörter: |
CMOS transimpedance amplifiers CMOS analogue integrated circuits open-loop regulated cascode topology |
|---|
| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on ultrasonics, ferroelectrics, and frequency control - New York, NY : IEEE, 1986, 62(2015), 5, Seite 802-813 |
|---|---|
| Übergeordnetes Werk: |
volume:62 ; year:2015 ; number:5 ; pages:802-813 |
| Links: |
|---|
| DOI / URN: |
10.1109/TUFFC.2015.007051 |
|---|
| Katalog-ID: |
OLC196315066X |
|---|
| LEADER | 01000caa a2200265 4500 | ||
|---|---|---|---|
| 001 | OLC196315066X | ||
| 003 | DE-627 | ||
| 005 | 20210716012538.0 | ||
| 007 | tu | ||
| 008 | 160206s2015 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1109/TUFFC.2015.007051 |2 doi | |
| 028 | 5 | 2 | |a PQ20160617 |
| 035 | |a (DE-627)OLC196315066X | ||
| 035 | |a (DE-599)GBVOLC196315066X | ||
| 035 | |a (PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430 | ||
| 035 | |a (KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 520 |a 620 |a 530 |q DNB |
| 100 | 1 | |a Lavasani, Hossein Miri |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Single-resonator dual-frequency AIN-on-Si MEMS oscillators |
| 264 | 1 | |c 2015 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 520 | |a This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. | ||
| 650 | 4 | |a frequency 1 MHz | |
| 650 | 4 | |a Resonant frequency | |
| 650 | 4 | |a oscillators | |
| 650 | 4 | |a silicon | |
| 650 | 4 | |a III-V semiconductors | |
| 650 | 4 | |a low-power interface IC | |
| 650 | 4 | |a frequency 35 MHz to 175 MHz | |
| 650 | 4 | |a elemental semiconductors | |
| 650 | 4 | |a CMOS transimpedance amplifiers | |
| 650 | 4 | |a Power demand | |
| 650 | 4 | |a low-power interface | |
| 650 | 4 | |a open loop systems | |
| 650 | 4 | |a Q-factor | |
| 650 | 4 | |a aluminium compounds | |
| 650 | 4 | |a phase shift | |
| 650 | 4 | |a Inverters | |
| 650 | 4 | |a high quality factor | |
| 650 | 4 | |a wide band gap semiconductors | |
| 650 | 4 | |a shunt-shunt feedback | |
| 650 | 4 | |a phase noise | |
| 650 | 4 | |a high-frequency modes | |
| 650 | 4 | |a CMOS analogue integrated circuits | |
| 650 | 4 | |a open-loop regulated cascode topology | |
| 650 | 4 | |a single-resonator dual-frequency AlN-Si MEMS oscillators | |
| 650 | 4 | |a AlN-Si | |
| 650 | 4 | |a bulk acoustic modes | |
| 650 | 4 | |a micromechanical resonators | |
| 650 | 4 | |a operational amplifiers | |
| 650 | 4 | |a Transceivers | |
| 650 | 4 | |a phase-noise optimization | |
| 650 | 4 | |a low-frequency modes | |
| 650 | 4 | |a phase-noise performance | |
| 650 | 4 | |a dual-frequency oscillators | |
| 650 | 4 | |a on-chip switching network | |
| 650 | 4 | |a Noise | |
| 650 | 4 | |a Oscillators | |
| 700 | 1 | |a Abdolvand, Reza |4 oth | |
| 700 | 1 | |a Ayazi, Farrokh |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |t IEEE transactions on ultrasonics, ferroelectrics, and frequency control |d New York, NY : IEEE, 1986 |g 62(2015), 5, Seite 802-813 |w (DE-627)129191442 |w (DE-600)53308-7 |w (DE-576)014456540 |x 0885-3010 |7 nnns |
| 773 | 1 | 8 | |g volume:62 |g year:2015 |g number:5 |g pages:802-813 |
| 856 | 4 | 1 | |u http://dx.doi.org/10.1109/TUFFC.2015.007051 |3 Volltext |
| 856 | 4 | 2 | |u http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520 |
| 856 | 4 | 2 | |u http://www.ncbi.nlm.nih.gov/pubmed/25965675 |
| 856 | 4 | 2 | |u http://search.proquest.com/docview/1685290982 |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_95 | ||
| 951 | |a AR | ||
| 952 | |d 62 |j 2015 |e 5 |h 802-813 | ||
| author_variant |
h m l hm hml |
|---|---|
| matchkey_str |
article:08853010:2015----::igeeoaodafeunyiosm |
| hierarchy_sort_str |
2015 |
| publishDate |
2015 |
| allfields |
10.1109/TUFFC.2015.007051 doi PQ20160617 (DE-627)OLC196315066X (DE-599)GBVOLC196315066X (PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430 (KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators DE-627 ger DE-627 rakwb eng 520 620 530 DNB Lavasani, Hossein Miri verfasserin aut Single-resonator dual-frequency AIN-on-Si MEMS oscillators 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. frequency 1 MHz Resonant frequency oscillators silicon III-V semiconductors low-power interface IC frequency 35 MHz to 175 MHz elemental semiconductors CMOS transimpedance amplifiers Power demand low-power interface open loop systems Q-factor aluminium compounds phase shift Inverters high quality factor wide band gap semiconductors shunt-shunt feedback phase noise high-frequency modes CMOS analogue integrated circuits open-loop regulated cascode topology single-resonator dual-frequency AlN-Si MEMS oscillators AlN-Si bulk acoustic modes micromechanical resonators operational amplifiers Transceivers phase-noise optimization low-frequency modes phase-noise performance dual-frequency oscillators on-chip switching network Noise Oscillators Abdolvand, Reza oth Ayazi, Farrokh oth Enthalten in IEEE transactions on ultrasonics, ferroelectrics, and frequency control New York, NY : IEEE, 1986 62(2015), 5, Seite 802-813 (DE-627)129191442 (DE-600)53308-7 (DE-576)014456540 0885-3010 nnns volume:62 year:2015 number:5 pages:802-813 http://dx.doi.org/10.1109/TUFFC.2015.007051 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520 http://www.ncbi.nlm.nih.gov/pubmed/25965675 http://search.proquest.com/docview/1685290982 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_95 AR 62 2015 5 802-813 |
| spelling |
10.1109/TUFFC.2015.007051 doi PQ20160617 (DE-627)OLC196315066X (DE-599)GBVOLC196315066X (PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430 (KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators DE-627 ger DE-627 rakwb eng 520 620 530 DNB Lavasani, Hossein Miri verfasserin aut Single-resonator dual-frequency AIN-on-Si MEMS oscillators 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. frequency 1 MHz Resonant frequency oscillators silicon III-V semiconductors low-power interface IC frequency 35 MHz to 175 MHz elemental semiconductors CMOS transimpedance amplifiers Power demand low-power interface open loop systems Q-factor aluminium compounds phase shift Inverters high quality factor wide band gap semiconductors shunt-shunt feedback phase noise high-frequency modes CMOS analogue integrated circuits open-loop regulated cascode topology single-resonator dual-frequency AlN-Si MEMS oscillators AlN-Si bulk acoustic modes micromechanical resonators operational amplifiers Transceivers phase-noise optimization low-frequency modes phase-noise performance dual-frequency oscillators on-chip switching network Noise Oscillators Abdolvand, Reza oth Ayazi, Farrokh oth Enthalten in IEEE transactions on ultrasonics, ferroelectrics, and frequency control New York, NY : IEEE, 1986 62(2015), 5, Seite 802-813 (DE-627)129191442 (DE-600)53308-7 (DE-576)014456540 0885-3010 nnns volume:62 year:2015 number:5 pages:802-813 http://dx.doi.org/10.1109/TUFFC.2015.007051 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520 http://www.ncbi.nlm.nih.gov/pubmed/25965675 http://search.proquest.com/docview/1685290982 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_95 AR 62 2015 5 802-813 |
| allfields_unstemmed |
10.1109/TUFFC.2015.007051 doi PQ20160617 (DE-627)OLC196315066X (DE-599)GBVOLC196315066X (PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430 (KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators DE-627 ger DE-627 rakwb eng 520 620 530 DNB Lavasani, Hossein Miri verfasserin aut Single-resonator dual-frequency AIN-on-Si MEMS oscillators 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. frequency 1 MHz Resonant frequency oscillators silicon III-V semiconductors low-power interface IC frequency 35 MHz to 175 MHz elemental semiconductors CMOS transimpedance amplifiers Power demand low-power interface open loop systems Q-factor aluminium compounds phase shift Inverters high quality factor wide band gap semiconductors shunt-shunt feedback phase noise high-frequency modes CMOS analogue integrated circuits open-loop regulated cascode topology single-resonator dual-frequency AlN-Si MEMS oscillators AlN-Si bulk acoustic modes micromechanical resonators operational amplifiers Transceivers phase-noise optimization low-frequency modes phase-noise performance dual-frequency oscillators on-chip switching network Noise Oscillators Abdolvand, Reza oth Ayazi, Farrokh oth Enthalten in IEEE transactions on ultrasonics, ferroelectrics, and frequency control New York, NY : IEEE, 1986 62(2015), 5, Seite 802-813 (DE-627)129191442 (DE-600)53308-7 (DE-576)014456540 0885-3010 nnns volume:62 year:2015 number:5 pages:802-813 http://dx.doi.org/10.1109/TUFFC.2015.007051 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520 http://www.ncbi.nlm.nih.gov/pubmed/25965675 http://search.proquest.com/docview/1685290982 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_95 AR 62 2015 5 802-813 |
| allfieldsGer |
10.1109/TUFFC.2015.007051 doi PQ20160617 (DE-627)OLC196315066X (DE-599)GBVOLC196315066X (PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430 (KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators DE-627 ger DE-627 rakwb eng 520 620 530 DNB Lavasani, Hossein Miri verfasserin aut Single-resonator dual-frequency AIN-on-Si MEMS oscillators 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. frequency 1 MHz Resonant frequency oscillators silicon III-V semiconductors low-power interface IC frequency 35 MHz to 175 MHz elemental semiconductors CMOS transimpedance amplifiers Power demand low-power interface open loop systems Q-factor aluminium compounds phase shift Inverters high quality factor wide band gap semiconductors shunt-shunt feedback phase noise high-frequency modes CMOS analogue integrated circuits open-loop regulated cascode topology single-resonator dual-frequency AlN-Si MEMS oscillators AlN-Si bulk acoustic modes micromechanical resonators operational amplifiers Transceivers phase-noise optimization low-frequency modes phase-noise performance dual-frequency oscillators on-chip switching network Noise Oscillators Abdolvand, Reza oth Ayazi, Farrokh oth Enthalten in IEEE transactions on ultrasonics, ferroelectrics, and frequency control New York, NY : IEEE, 1986 62(2015), 5, Seite 802-813 (DE-627)129191442 (DE-600)53308-7 (DE-576)014456540 0885-3010 nnns volume:62 year:2015 number:5 pages:802-813 http://dx.doi.org/10.1109/TUFFC.2015.007051 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520 http://www.ncbi.nlm.nih.gov/pubmed/25965675 http://search.proquest.com/docview/1685290982 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_95 AR 62 2015 5 802-813 |
| allfieldsSound |
10.1109/TUFFC.2015.007051 doi PQ20160617 (DE-627)OLC196315066X (DE-599)GBVOLC196315066X (PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430 (KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators DE-627 ger DE-627 rakwb eng 520 620 530 DNB Lavasani, Hossein Miri verfasserin aut Single-resonator dual-frequency AIN-on-Si MEMS oscillators 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. frequency 1 MHz Resonant frequency oscillators silicon III-V semiconductors low-power interface IC frequency 35 MHz to 175 MHz elemental semiconductors CMOS transimpedance amplifiers Power demand low-power interface open loop systems Q-factor aluminium compounds phase shift Inverters high quality factor wide band gap semiconductors shunt-shunt feedback phase noise high-frequency modes CMOS analogue integrated circuits open-loop regulated cascode topology single-resonator dual-frequency AlN-Si MEMS oscillators AlN-Si bulk acoustic modes micromechanical resonators operational amplifiers Transceivers phase-noise optimization low-frequency modes phase-noise performance dual-frequency oscillators on-chip switching network Noise Oscillators Abdolvand, Reza oth Ayazi, Farrokh oth Enthalten in IEEE transactions on ultrasonics, ferroelectrics, and frequency control New York, NY : IEEE, 1986 62(2015), 5, Seite 802-813 (DE-627)129191442 (DE-600)53308-7 (DE-576)014456540 0885-3010 nnns volume:62 year:2015 number:5 pages:802-813 http://dx.doi.org/10.1109/TUFFC.2015.007051 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520 http://www.ncbi.nlm.nih.gov/pubmed/25965675 http://search.proquest.com/docview/1685290982 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_95 AR 62 2015 5 802-813 |
| language |
English |
| source |
Enthalten in IEEE transactions on ultrasonics, ferroelectrics, and frequency control 62(2015), 5, Seite 802-813 volume:62 year:2015 number:5 pages:802-813 |
| sourceStr |
Enthalten in IEEE transactions on ultrasonics, ferroelectrics, and frequency control 62(2015), 5, Seite 802-813 volume:62 year:2015 number:5 pages:802-813 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
frequency 1 MHz Resonant frequency oscillators silicon III-V semiconductors low-power interface IC frequency 35 MHz to 175 MHz elemental semiconductors CMOS transimpedance amplifiers Power demand low-power interface open loop systems Q-factor aluminium compounds phase shift Inverters high quality factor wide band gap semiconductors shunt-shunt feedback phase noise high-frequency modes CMOS analogue integrated circuits open-loop regulated cascode topology single-resonator dual-frequency AlN-Si MEMS oscillators AlN-Si bulk acoustic modes micromechanical resonators operational amplifiers Transceivers phase-noise optimization low-frequency modes phase-noise performance dual-frequency oscillators on-chip switching network Noise Oscillators |
| dewey-raw |
520 |
| isfreeaccess_bool |
false |
| container_title |
IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| authorswithroles_txt_mv |
Lavasani, Hossein Miri @@aut@@ Abdolvand, Reza @@oth@@ Ayazi, Farrokh @@oth@@ |
| publishDateDaySort_date |
2015-01-01T00:00:00Z |
| hierarchy_top_id |
129191442 |
| dewey-sort |
3520 |
| id |
OLC196315066X |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC196315066X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210716012538.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TUFFC.2015.007051</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC196315066X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC196315066X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">520</subfield><subfield code="a">620</subfield><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lavasani, Hossein Miri</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Single-resonator dual-frequency AIN-on-Si MEMS oscillators</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">frequency 1 MHz</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resonant frequency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">oscillators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">III-V semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-power interface IC</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">frequency 35 MHz to 175 MHz</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">elemental semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS transimpedance amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Power demand</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-power interface</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">open loop systems</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Q-factor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">aluminium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase shift</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Inverters</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">high quality factor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">wide band gap semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">shunt-shunt feedback</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">high-frequency modes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS analogue integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">open-loop regulated cascode topology</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single-resonator dual-frequency AlN-Si MEMS oscillators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">AlN-Si</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bulk acoustic modes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">micromechanical resonators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">operational amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transceivers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase-noise optimization</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-frequency modes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase-noise performance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">dual-frequency oscillators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">on-chip switching network</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oscillators</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abdolvand, Reza</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ayazi, Farrokh</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on ultrasonics, ferroelectrics, and frequency control</subfield><subfield code="d">New York, NY : IEEE, 1986</subfield><subfield code="g">62(2015), 5, Seite 802-813</subfield><subfield code="w">(DE-627)129191442</subfield><subfield code="w">(DE-600)53308-7</subfield><subfield code="w">(DE-576)014456540</subfield><subfield code="x">0885-3010</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:5</subfield><subfield code="g">pages:802-813</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TUFFC.2015.007051</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://www.ncbi.nlm.nih.gov/pubmed/25965675</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://search.proquest.com/docview/1685290982</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="j">2015</subfield><subfield code="e">5</subfield><subfield code="h">802-813</subfield></datafield></record></collection>
|
| author |
Lavasani, Hossein Miri |
| spellingShingle |
Lavasani, Hossein Miri ddc 520 misc frequency 1 MHz misc Resonant frequency misc oscillators misc silicon misc III-V semiconductors misc low-power interface IC misc frequency 35 MHz to 175 MHz misc elemental semiconductors misc CMOS transimpedance amplifiers misc Power demand misc low-power interface misc open loop systems misc Q-factor misc aluminium compounds misc phase shift misc Inverters misc high quality factor misc wide band gap semiconductors misc shunt-shunt feedback misc phase noise misc high-frequency modes misc CMOS analogue integrated circuits misc open-loop regulated cascode topology misc single-resonator dual-frequency AlN-Si MEMS oscillators misc AlN-Si misc bulk acoustic modes misc micromechanical resonators misc operational amplifiers misc Transceivers misc phase-noise optimization misc low-frequency modes misc phase-noise performance misc dual-frequency oscillators misc on-chip switching network misc Noise misc Oscillators Single-resonator dual-frequency AIN-on-Si MEMS oscillators |
| authorStr |
Lavasani, Hossein Miri |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129191442 |
| format |
Article |
| dewey-ones |
520 - Astronomy & allied sciences 620 - Engineering & allied operations 530 - Physics |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0885-3010 |
| topic_title |
520 620 530 DNB Single-resonator dual-frequency AIN-on-Si MEMS oscillators frequency 1 MHz Resonant frequency oscillators silicon III-V semiconductors low-power interface IC frequency 35 MHz to 175 MHz elemental semiconductors CMOS transimpedance amplifiers Power demand low-power interface open loop systems Q-factor aluminium compounds phase shift Inverters high quality factor wide band gap semiconductors shunt-shunt feedback phase noise high-frequency modes CMOS analogue integrated circuits open-loop regulated cascode topology single-resonator dual-frequency AlN-Si MEMS oscillators AlN-Si bulk acoustic modes micromechanical resonators operational amplifiers Transceivers phase-noise optimization low-frequency modes phase-noise performance dual-frequency oscillators on-chip switching network Noise Oscillators |
| topic |
ddc 520 misc frequency 1 MHz misc Resonant frequency misc oscillators misc silicon misc III-V semiconductors misc low-power interface IC misc frequency 35 MHz to 175 MHz misc elemental semiconductors misc CMOS transimpedance amplifiers misc Power demand misc low-power interface misc open loop systems misc Q-factor misc aluminium compounds misc phase shift misc Inverters misc high quality factor misc wide band gap semiconductors misc shunt-shunt feedback misc phase noise misc high-frequency modes misc CMOS analogue integrated circuits misc open-loop regulated cascode topology misc single-resonator dual-frequency AlN-Si MEMS oscillators misc AlN-Si misc bulk acoustic modes misc micromechanical resonators misc operational amplifiers misc Transceivers misc phase-noise optimization misc low-frequency modes misc phase-noise performance misc dual-frequency oscillators misc on-chip switching network misc Noise misc Oscillators |
| topic_unstemmed |
ddc 520 misc frequency 1 MHz misc Resonant frequency misc oscillators misc silicon misc III-V semiconductors misc low-power interface IC misc frequency 35 MHz to 175 MHz misc elemental semiconductors misc CMOS transimpedance amplifiers misc Power demand misc low-power interface misc open loop systems misc Q-factor misc aluminium compounds misc phase shift misc Inverters misc high quality factor misc wide band gap semiconductors misc shunt-shunt feedback misc phase noise misc high-frequency modes misc CMOS analogue integrated circuits misc open-loop regulated cascode topology misc single-resonator dual-frequency AlN-Si MEMS oscillators misc AlN-Si misc bulk acoustic modes misc micromechanical resonators misc operational amplifiers misc Transceivers misc phase-noise optimization misc low-frequency modes misc phase-noise performance misc dual-frequency oscillators misc on-chip switching network misc Noise misc Oscillators |
| topic_browse |
ddc 520 misc frequency 1 MHz misc Resonant frequency misc oscillators misc silicon misc III-V semiconductors misc low-power interface IC misc frequency 35 MHz to 175 MHz misc elemental semiconductors misc CMOS transimpedance amplifiers misc Power demand misc low-power interface misc open loop systems misc Q-factor misc aluminium compounds misc phase shift misc Inverters misc high quality factor misc wide band gap semiconductors misc shunt-shunt feedback misc phase noise misc high-frequency modes misc CMOS analogue integrated circuits misc open-loop regulated cascode topology misc single-resonator dual-frequency AlN-Si MEMS oscillators misc AlN-Si misc bulk acoustic modes misc micromechanical resonators misc operational amplifiers misc Transceivers misc phase-noise optimization misc low-frequency modes misc phase-noise performance misc dual-frequency oscillators misc on-chip switching network misc Noise misc Oscillators |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| author2_variant |
r a ra f a fa |
| hierarchy_parent_title |
IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| hierarchy_parent_id |
129191442 |
| dewey-tens |
520 - Astronomy 620 - Engineering 530 - Physics |
| hierarchy_top_title |
IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129191442 (DE-600)53308-7 (DE-576)014456540 |
| title |
Single-resonator dual-frequency AIN-on-Si MEMS oscillators |
| ctrlnum |
(DE-627)OLC196315066X (DE-599)GBVOLC196315066X (PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430 (KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators |
| title_full |
Single-resonator dual-frequency AIN-on-Si MEMS oscillators |
| author_sort |
Lavasani, Hossein Miri |
| journal |
IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| journalStr |
IEEE transactions on ultrasonics, ferroelectrics, and frequency control |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 600 - Technology |
| recordtype |
marc |
| publishDateSort |
2015 |
| contenttype_str_mv |
txt |
| container_start_page |
802 |
| author_browse |
Lavasani, Hossein Miri |
| container_volume |
62 |
| class |
520 620 530 DNB |
| format_se |
Aufsätze |
| author-letter |
Lavasani, Hossein Miri |
| doi_str_mv |
10.1109/TUFFC.2015.007051 |
| dewey-full |
520 620 530 |
| title_sort |
single-resonator dual-frequency ain-on-si mems oscillators |
| title_auth |
Single-resonator dual-frequency AIN-on-Si MEMS oscillators |
| abstract |
This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. |
| abstractGer |
This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. |
| abstract_unstemmed |
This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_95 |
| container_issue |
5 |
| title_short |
Single-resonator dual-frequency AIN-on-Si MEMS oscillators |
| url |
http://dx.doi.org/10.1109/TUFFC.2015.007051 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520 http://www.ncbi.nlm.nih.gov/pubmed/25965675 http://search.proquest.com/docview/1685290982 |
| remote_bool |
false |
| author2 |
Abdolvand, Reza Ayazi, Farrokh |
| author2Str |
Abdolvand, Reza Ayazi, Farrokh |
| ppnlink |
129191442 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth |
| doi_str |
10.1109/TUFFC.2015.007051 |
| up_date |
2024-07-04T05:05:14.248Z |
| _version_ |
1803623610970013696 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC196315066X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210716012538.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TUFFC.2015.007051</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC196315066X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC196315066X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c2043-97c49cd5044aa3e04d71cc6361e17b387ba4a1bd59a615691f3a17bcc909a2430</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0013324820150000062000500802singleresonatordualfrequencyainonsimemsoscillators</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">520</subfield><subfield code="a">620</subfield><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lavasani, Hossein Miri</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Single-resonator dual-frequency AIN-on-Si MEMS oscillators</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper reports on the design, implementation, and phase-noise optimization of low-power interface IC for dual-frequency oscillators that utilize two high quality factor (Q) width-extensional bulk acoustic modes of the same AlN-on-silicon resonator. Two 0.5-μm CMOS transimpedance amplifiers (TIA) have been designed, characterized, and interfaced with two dual-mode resonators operating at 35.5/105.7 MHz (first/third order modes) and 35.5/174.9 MHz (first/ fifth order modes). One TIA uses open-loop regulated cascode (RGC) topology in the first stage to enable low power operation, whereas the second one uses an inverter with shunt-shunt feedback to deliver higher gain with lower phase noise. An on-chip switching network is incorporated into each TIA to change the oscillation frequency based on the different phase shift. The effect of TIA on the phase-noise performance of oscillators is studied and compared for both topologies. The measured phase noise of low- and high-frequency modes at 1 kHz offset from carrier are -114 and -108 dBc/Hz for the 35/105 MHz oscillator, and -108 and -105 dBc/Hz for the 35/175 MHz oscillator, respectively, whereas the far-from-carrier reaches below -140 dBc/Hz in all cases.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">frequency 1 MHz</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resonant frequency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">oscillators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">silicon</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">III-V semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-power interface IC</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">frequency 35 MHz to 175 MHz</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">elemental semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS transimpedance amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Power demand</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-power interface</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">open loop systems</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Q-factor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">aluminium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase shift</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Inverters</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">high quality factor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">wide band gap semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">shunt-shunt feedback</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">high-frequency modes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS analogue integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">open-loop regulated cascode topology</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single-resonator dual-frequency AlN-Si MEMS oscillators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">AlN-Si</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bulk acoustic modes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">micromechanical resonators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">operational amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transceivers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase-noise optimization</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">low-frequency modes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">phase-noise performance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">dual-frequency oscillators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">on-chip switching network</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Noise</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oscillators</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abdolvand, Reza</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ayazi, Farrokh</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on ultrasonics, ferroelectrics, and frequency control</subfield><subfield code="d">New York, NY : IEEE, 1986</subfield><subfield code="g">62(2015), 5, Seite 802-813</subfield><subfield code="w">(DE-627)129191442</subfield><subfield code="w">(DE-600)53308-7</subfield><subfield code="w">(DE-576)014456540</subfield><subfield code="x">0885-3010</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:62</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:5</subfield><subfield code="g">pages:802-813</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TUFFC.2015.007051</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7103520</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://www.ncbi.nlm.nih.gov/pubmed/25965675</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://search.proquest.com/docview/1685290982</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">62</subfield><subfield code="j">2015</subfield><subfield code="e">5</subfield><subfield code="h">802-813</subfield></datafield></record></collection>
|
| score |
7.4030848 |