Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers
The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelle...
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| Autor*in: |
Hyunchol Shin [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
peak output third-order intercept point second-order interaction effect source degenerated derivative superposition third-order intercept point (IP3) RF FET differential amplifiers |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on microwave theory and techniques - New York, NY : IEEE, 1963, 63(2015), 3, Seite 1026-1035 |
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| Übergeordnetes Werk: |
volume:63 ; year:2015 ; number:3 ; pages:1026-1035 |
| Links: |
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| DOI / URN: |
10.1109/TMTT.2015.2391101 |
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| Katalog-ID: |
OLC1963485157 |
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| 245 | 1 | 0 | |a Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers |
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| 520 | |a The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. | ||
| 650 | 4 | |a Impedance | |
| 650 | 4 | |a MMIC amplifiers | |
| 650 | 4 | |a field effect transistor | |
| 650 | 4 | |a Linearity | |
| 650 | 4 | |a radio transmitters | |
| 650 | 4 | |a Volterra series analysis | |
| 650 | 4 | |a peak output third-order intercept point | |
| 650 | 4 | |a Inductors | |
| 650 | 4 | |a second-order interaction effect | |
| 650 | 4 | |a power 30.2 mW | |
| 650 | 4 | |a pseudodifferential amplifier | |
| 650 | 4 | |a source degenerated derivative superposition | |
| 650 | 4 | |a driver circuits | |
| 650 | 4 | |a differential amplifiers | |
| 650 | 4 | |a frequency 2 GHz | |
| 650 | 4 | |a Volterra series | |
| 650 | 4 | |a UHF power amplifiers | |
| 650 | 4 | |a CMOS integrated circuit | |
| 650 | 4 | |a voltage 1.2 V | |
| 650 | 4 | |a CMOS integrated circuits | |
| 650 | 4 | |a Derivative superposition (DS) | |
| 650 | 4 | |a power amplifier driver | |
| 650 | 4 | |a RF transmitter | |
| 650 | 4 | |a gain 10.6 dB | |
| 650 | 4 | |a third-order intercept point (IP3) | |
| 650 | 4 | |a Radio frequency | |
| 650 | 4 | |a differential amplifier | |
| 650 | 4 | |a field-effect transistor (FET) | |
| 650 | 4 | |a RF FET differential amplifiers | |
| 650 | 4 | |a field effect transistors | |
| 650 | 4 | |a differential source degenerated DS method | |
| 650 | 4 | |a Resistors | |
| 650 | 4 | |a size 0.13 mum | |
| 700 | 0 | |a Jongsik Kim |4 oth | |
| 700 | 0 | |a Namsoo Kim |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |t IEEE transactions on microwave theory and techniques |d New York, NY : IEEE, 1963 |g 63(2015), 3, Seite 1026-1035 |w (DE-627)129547344 |w (DE-600)218509-X |w (DE-576)01499822X |x 0018-9480 |7 nnns |
| 773 | 1 | 8 | |g volume:63 |g year:2015 |g number:3 |g pages:1026-1035 |
| 856 | 4 | 1 | |u http://dx.doi.org/10.1109/TMTT.2015.2391101 |3 Volltext |
| 856 | 4 | 2 | |u http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7021966 |
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10.1109/TMTT.2015.2391101 doi PQ20160617 (DE-627)OLC1963485157 (DE-599)GBVOLC1963485157 (PRQ)i1137-68d2fdd645e9ed51f2fde7111426247f591b4f10891c6acbde320df73b55eb40 (KEY)0017514520150000063000301026sourcedegeneratedderivativesuperpositionmethodforl DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hyunchol Shin verfasserin aut Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. Impedance MMIC amplifiers field effect transistor Linearity radio transmitters Volterra series analysis peak output third-order intercept point Inductors second-order interaction effect power 30.2 mW pseudodifferential amplifier source degenerated derivative superposition driver circuits differential amplifiers frequency 2 GHz Volterra series UHF power amplifiers CMOS integrated circuit voltage 1.2 V CMOS integrated circuits Derivative superposition (DS) power amplifier driver RF transmitter gain 10.6 dB third-order intercept point (IP3) Radio frequency differential amplifier field-effect transistor (FET) RF FET differential amplifiers field effect transistors differential source degenerated DS method Resistors size 0.13 mum Jongsik Kim oth Namsoo Kim oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 3, Seite 1026-1035 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:3 pages:1026-1035 http://dx.doi.org/10.1109/TMTT.2015.2391101 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7021966 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 3 1026-1035 |
| spelling |
10.1109/TMTT.2015.2391101 doi PQ20160617 (DE-627)OLC1963485157 (DE-599)GBVOLC1963485157 (PRQ)i1137-68d2fdd645e9ed51f2fde7111426247f591b4f10891c6acbde320df73b55eb40 (KEY)0017514520150000063000301026sourcedegeneratedderivativesuperpositionmethodforl DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hyunchol Shin verfasserin aut Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. Impedance MMIC amplifiers field effect transistor Linearity radio transmitters Volterra series analysis peak output third-order intercept point Inductors second-order interaction effect power 30.2 mW pseudodifferential amplifier source degenerated derivative superposition driver circuits differential amplifiers frequency 2 GHz Volterra series UHF power amplifiers CMOS integrated circuit voltage 1.2 V CMOS integrated circuits Derivative superposition (DS) power amplifier driver RF transmitter gain 10.6 dB third-order intercept point (IP3) Radio frequency differential amplifier field-effect transistor (FET) RF FET differential amplifiers field effect transistors differential source degenerated DS method Resistors size 0.13 mum Jongsik Kim oth Namsoo Kim oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 3, Seite 1026-1035 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:3 pages:1026-1035 http://dx.doi.org/10.1109/TMTT.2015.2391101 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7021966 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 3 1026-1035 |
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10.1109/TMTT.2015.2391101 doi PQ20160617 (DE-627)OLC1963485157 (DE-599)GBVOLC1963485157 (PRQ)i1137-68d2fdd645e9ed51f2fde7111426247f591b4f10891c6acbde320df73b55eb40 (KEY)0017514520150000063000301026sourcedegeneratedderivativesuperpositionmethodforl DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hyunchol Shin verfasserin aut Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. Impedance MMIC amplifiers field effect transistor Linearity radio transmitters Volterra series analysis peak output third-order intercept point Inductors second-order interaction effect power 30.2 mW pseudodifferential amplifier source degenerated derivative superposition driver circuits differential amplifiers frequency 2 GHz Volterra series UHF power amplifiers CMOS integrated circuit voltage 1.2 V CMOS integrated circuits Derivative superposition (DS) power amplifier driver RF transmitter gain 10.6 dB third-order intercept point (IP3) Radio frequency differential amplifier field-effect transistor (FET) RF FET differential amplifiers field effect transistors differential source degenerated DS method Resistors size 0.13 mum Jongsik Kim oth Namsoo Kim oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 3, Seite 1026-1035 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:3 pages:1026-1035 http://dx.doi.org/10.1109/TMTT.2015.2391101 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7021966 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 3 1026-1035 |
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10.1109/TMTT.2015.2391101 doi PQ20160617 (DE-627)OLC1963485157 (DE-599)GBVOLC1963485157 (PRQ)i1137-68d2fdd645e9ed51f2fde7111426247f591b4f10891c6acbde320df73b55eb40 (KEY)0017514520150000063000301026sourcedegeneratedderivativesuperpositionmethodforl DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hyunchol Shin verfasserin aut Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. Impedance MMIC amplifiers field effect transistor Linearity radio transmitters Volterra series analysis peak output third-order intercept point Inductors second-order interaction effect power 30.2 mW pseudodifferential amplifier source degenerated derivative superposition driver circuits differential amplifiers frequency 2 GHz Volterra series UHF power amplifiers CMOS integrated circuit voltage 1.2 V CMOS integrated circuits Derivative superposition (DS) power amplifier driver RF transmitter gain 10.6 dB third-order intercept point (IP3) Radio frequency differential amplifier field-effect transistor (FET) RF FET differential amplifiers field effect transistors differential source degenerated DS method Resistors size 0.13 mum Jongsik Kim oth Namsoo Kim oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 3, Seite 1026-1035 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:3 pages:1026-1035 http://dx.doi.org/10.1109/TMTT.2015.2391101 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7021966 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 3 1026-1035 |
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10.1109/TMTT.2015.2391101 doi PQ20160617 (DE-627)OLC1963485157 (DE-599)GBVOLC1963485157 (PRQ)i1137-68d2fdd645e9ed51f2fde7111426247f591b4f10891c6acbde320df73b55eb40 (KEY)0017514520150000063000301026sourcedegeneratedderivativesuperpositionmethodforl DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hyunchol Shin verfasserin aut Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. Impedance MMIC amplifiers field effect transistor Linearity radio transmitters Volterra series analysis peak output third-order intercept point Inductors second-order interaction effect power 30.2 mW pseudodifferential amplifier source degenerated derivative superposition driver circuits differential amplifiers frequency 2 GHz Volterra series UHF power amplifiers CMOS integrated circuit voltage 1.2 V CMOS integrated circuits Derivative superposition (DS) power amplifier driver RF transmitter gain 10.6 dB third-order intercept point (IP3) Radio frequency differential amplifier field-effect transistor (FET) RF FET differential amplifiers field effect transistors differential source degenerated DS method Resistors size 0.13 mum Jongsik Kim oth Namsoo Kim oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 3, Seite 1026-1035 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:3 pages:1026-1035 http://dx.doi.org/10.1109/TMTT.2015.2391101 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7021966 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 3 1026-1035 |
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The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. 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Hyunchol Shin |
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Hyunchol Shin ddc 620 bkl 53.00 misc Impedance misc MMIC amplifiers misc field effect transistor misc Linearity misc radio transmitters misc Volterra series analysis misc peak output third-order intercept point misc Inductors misc second-order interaction effect misc power 30.2 mW misc pseudodifferential amplifier misc source degenerated derivative superposition misc driver circuits misc differential amplifiers misc frequency 2 GHz misc Volterra series misc UHF power amplifiers misc CMOS integrated circuit misc voltage 1.2 V misc CMOS integrated circuits misc Derivative superposition (DS) misc power amplifier driver misc RF transmitter misc gain 10.6 dB misc third-order intercept point (IP3) misc Radio frequency misc differential amplifier misc field-effect transistor (FET) misc RF FET differential amplifiers misc field effect transistors misc differential source degenerated DS method misc Resistors misc size 0.13 mum Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers |
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620 DNB 53.00 bkl Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers Impedance MMIC amplifiers field effect transistor Linearity radio transmitters Volterra series analysis peak output third-order intercept point Inductors second-order interaction effect power 30.2 mW pseudodifferential amplifier source degenerated derivative superposition driver circuits differential amplifiers frequency 2 GHz Volterra series UHF power amplifiers CMOS integrated circuit voltage 1.2 V CMOS integrated circuits Derivative superposition (DS) power amplifier driver RF transmitter gain 10.6 dB third-order intercept point (IP3) Radio frequency differential amplifier field-effect transistor (FET) RF FET differential amplifiers field effect transistors differential source degenerated DS method Resistors size 0.13 mum |
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ddc 620 bkl 53.00 misc Impedance misc MMIC amplifiers misc field effect transistor misc Linearity misc radio transmitters misc Volterra series analysis misc peak output third-order intercept point misc Inductors misc second-order interaction effect misc power 30.2 mW misc pseudodifferential amplifier misc source degenerated derivative superposition misc driver circuits misc differential amplifiers misc frequency 2 GHz misc Volterra series misc UHF power amplifiers misc CMOS integrated circuit misc voltage 1.2 V misc CMOS integrated circuits misc Derivative superposition (DS) misc power amplifier driver misc RF transmitter misc gain 10.6 dB misc third-order intercept point (IP3) misc Radio frequency misc differential amplifier misc field-effect transistor (FET) misc RF FET differential amplifiers misc field effect transistors misc differential source degenerated DS method misc Resistors misc size 0.13 mum |
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ddc 620 bkl 53.00 misc Impedance misc MMIC amplifiers misc field effect transistor misc Linearity misc radio transmitters misc Volterra series analysis misc peak output third-order intercept point misc Inductors misc second-order interaction effect misc power 30.2 mW misc pseudodifferential amplifier misc source degenerated derivative superposition misc driver circuits misc differential amplifiers misc frequency 2 GHz misc Volterra series misc UHF power amplifiers misc CMOS integrated circuit misc voltage 1.2 V misc CMOS integrated circuits misc Derivative superposition (DS) misc power amplifier driver misc RF transmitter misc gain 10.6 dB misc third-order intercept point (IP3) misc Radio frequency misc differential amplifier misc field-effect transistor (FET) misc RF FET differential amplifiers misc field effect transistors misc differential source degenerated DS method misc Resistors misc size 0.13 mum |
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ddc 620 bkl 53.00 misc Impedance misc MMIC amplifiers misc field effect transistor misc Linearity misc radio transmitters misc Volterra series analysis misc peak output third-order intercept point misc Inductors misc second-order interaction effect misc power 30.2 mW misc pseudodifferential amplifier misc source degenerated derivative superposition misc driver circuits misc differential amplifiers misc frequency 2 GHz misc Volterra series misc UHF power amplifiers misc CMOS integrated circuit misc voltage 1.2 V misc CMOS integrated circuits misc Derivative superposition (DS) misc power amplifier driver misc RF transmitter misc gain 10.6 dB misc third-order intercept point (IP3) misc Radio frequency misc differential amplifier misc field-effect transistor (FET) misc RF FET differential amplifiers misc field effect transistors misc differential source degenerated DS method misc Resistors misc size 0.13 mum |
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Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers |
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Hyunchol Shin |
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source degenerated derivative superposition method for linearizing rf fet differential amplifiers |
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Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers |
| abstract |
The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. |
| abstractGer |
The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. |
| abstract_unstemmed |
The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain. |
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Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers |
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theory and techniques</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">63(2015), 3, Seite 1026-1035</subfield><subfield code="w">(DE-627)129547344</subfield><subfield code="w">(DE-600)218509-X</subfield><subfield code="w">(DE-576)01499822X</subfield><subfield code="x">0018-9480</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:63</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:1026-1035</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TMTT.2015.2391101</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7021966</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" 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