An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS
A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to b...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sessou, Kossi K [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
stacked transistor architecture fully integrated class-F power amplifier reconfigurable matching network |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on microwave theory and techniques - New York, NY : IEEE, 1963, 63(2015), 4, Seite 1315-1323 |
|---|---|
| Übergeordnetes Werk: |
volume:63 ; year:2015 ; number:4 ; pages:1315-1323 |
| Links: |
|---|
| DOI / URN: |
10.1109/TMTT.2015.2403843 |
|---|
| Katalog-ID: |
OLC1963487982 |
|---|
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| 245 | 1 | 3 | |a An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS |
| 264 | 1 | |c 2015 | |
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| 520 | |a A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. | ||
| 650 | 4 | |a stacked transistor architecture | |
| 650 | 4 | |a Impedance | |
| 650 | 4 | |a Transistors | |
| 650 | 4 | |a integrated circuit packaging | |
| 650 | 4 | |a fully integrated class-F power amplifier | |
| 650 | 4 | |a power-added efficiency | |
| 650 | 4 | |a microwave power amplifiers | |
| 650 | 4 | |a CMOS integrated circuits | |
| 650 | 4 | |a field effect MMIC | |
| 650 | 4 | |a CMOS | |
| 650 | 4 | |a Impedance matching | |
| 650 | 4 | |a reconfigurable matching network | |
| 650 | 4 | |a output matching network | |
| 650 | 4 | |a frequency 700 MHz to 1200 MHz | |
| 650 | 4 | |a on-chip transformers | |
| 650 | 4 | |a Harmonic analysis | |
| 650 | 4 | |a total chip area | |
| 650 | 4 | |a Couplings | |
| 650 | 4 | |a Power amplifiers (PAs) | |
| 650 | 4 | |a tunable harmonic terminations | |
| 650 | 4 | |a reconfigurable harmonic termination | |
| 650 | 4 | |a size 0.13 mum | |
| 650 | 4 | |a Bandwidth | |
| 700 | 1 | |a Neihart, Nathan M |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |t IEEE transactions on microwave theory and techniques |d New York, NY : IEEE, 1963 |g 63(2015), 4, Seite 1315-1323 |w (DE-627)129547344 |w (DE-600)218509-X |w (DE-576)01499822X |x 0018-9480 |7 nnns |
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10.1109/TMTT.2015.2403843 doi PQ20160617 (DE-627)OLC1963487982 (DE-599)GBVOLC1963487982 (PRQ)ieee_primary_0b0000648295940b0 (KEY)0017514520150000063000401315integrated7001200mhzclassfpawithtunableharmonicter DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Sessou, Kossi K verfasserin aut An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. stacked transistor architecture Impedance Transistors integrated circuit packaging fully integrated class-F power amplifier power-added efficiency microwave power amplifiers CMOS integrated circuits field effect MMIC CMOS Impedance matching reconfigurable matching network output matching network frequency 700 MHz to 1200 MHz on-chip transformers Harmonic analysis total chip area Couplings Power amplifiers (PAs) tunable harmonic terminations reconfigurable harmonic termination size 0.13 mum Bandwidth Neihart, Nathan M oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 4, Seite 1315-1323 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:4 pages:1315-1323 http://dx.doi.org/10.1109/TMTT.2015.2403843 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7048064 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 4 1315-1323 |
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10.1109/TMTT.2015.2403843 doi PQ20160617 (DE-627)OLC1963487982 (DE-599)GBVOLC1963487982 (PRQ)ieee_primary_0b0000648295940b0 (KEY)0017514520150000063000401315integrated7001200mhzclassfpawithtunableharmonicter DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Sessou, Kossi K verfasserin aut An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. stacked transistor architecture Impedance Transistors integrated circuit packaging fully integrated class-F power amplifier power-added efficiency microwave power amplifiers CMOS integrated circuits field effect MMIC CMOS Impedance matching reconfigurable matching network output matching network frequency 700 MHz to 1200 MHz on-chip transformers Harmonic analysis total chip area Couplings Power amplifiers (PAs) tunable harmonic terminations reconfigurable harmonic termination size 0.13 mum Bandwidth Neihart, Nathan M oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 4, Seite 1315-1323 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:4 pages:1315-1323 http://dx.doi.org/10.1109/TMTT.2015.2403843 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7048064 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 4 1315-1323 |
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10.1109/TMTT.2015.2403843 doi PQ20160617 (DE-627)OLC1963487982 (DE-599)GBVOLC1963487982 (PRQ)ieee_primary_0b0000648295940b0 (KEY)0017514520150000063000401315integrated7001200mhzclassfpawithtunableharmonicter DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Sessou, Kossi K verfasserin aut An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. stacked transistor architecture Impedance Transistors integrated circuit packaging fully integrated class-F power amplifier power-added efficiency microwave power amplifiers CMOS integrated circuits field effect MMIC CMOS Impedance matching reconfigurable matching network output matching network frequency 700 MHz to 1200 MHz on-chip transformers Harmonic analysis total chip area Couplings Power amplifiers (PAs) tunable harmonic terminations reconfigurable harmonic termination size 0.13 mum Bandwidth Neihart, Nathan M oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 4, Seite 1315-1323 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:4 pages:1315-1323 http://dx.doi.org/10.1109/TMTT.2015.2403843 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7048064 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 4 1315-1323 |
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10.1109/TMTT.2015.2403843 doi PQ20160617 (DE-627)OLC1963487982 (DE-599)GBVOLC1963487982 (PRQ)ieee_primary_0b0000648295940b0 (KEY)0017514520150000063000401315integrated7001200mhzclassfpawithtunableharmonicter DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Sessou, Kossi K verfasserin aut An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. stacked transistor architecture Impedance Transistors integrated circuit packaging fully integrated class-F power amplifier power-added efficiency microwave power amplifiers CMOS integrated circuits field effect MMIC CMOS Impedance matching reconfigurable matching network output matching network frequency 700 MHz to 1200 MHz on-chip transformers Harmonic analysis total chip area Couplings Power amplifiers (PAs) tunable harmonic terminations reconfigurable harmonic termination size 0.13 mum Bandwidth Neihart, Nathan M oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 4, Seite 1315-1323 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:4 pages:1315-1323 http://dx.doi.org/10.1109/TMTT.2015.2403843 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7048064 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 4 1315-1323 |
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10.1109/TMTT.2015.2403843 doi PQ20160617 (DE-627)OLC1963487982 (DE-599)GBVOLC1963487982 (PRQ)ieee_primary_0b0000648295940b0 (KEY)0017514520150000063000401315integrated7001200mhzclassfpawithtunableharmonicter DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Sessou, Kossi K verfasserin aut An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. stacked transistor architecture Impedance Transistors integrated circuit packaging fully integrated class-F power amplifier power-added efficiency microwave power amplifiers CMOS integrated circuits field effect MMIC CMOS Impedance matching reconfigurable matching network output matching network frequency 700 MHz to 1200 MHz on-chip transformers Harmonic analysis total chip area Couplings Power amplifiers (PAs) tunable harmonic terminations reconfigurable harmonic termination size 0.13 mum Bandwidth Neihart, Nathan M oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 4, Seite 1315-1323 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:4 pages:1315-1323 http://dx.doi.org/10.1109/TMTT.2015.2403843 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7048064 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 4 1315-1323 |
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Sessou, Kossi K ddc 620 bkl 53.00 misc stacked transistor architecture misc Impedance misc Transistors misc integrated circuit packaging misc fully integrated class-F power amplifier misc power-added efficiency misc microwave power amplifiers misc CMOS integrated circuits misc field effect MMIC misc CMOS misc Impedance matching misc reconfigurable matching network misc output matching network misc frequency 700 MHz to 1200 MHz misc on-chip transformers misc Harmonic analysis misc total chip area misc Couplings misc Power amplifiers (PAs) misc tunable harmonic terminations misc reconfigurable harmonic termination misc size 0.13 mum misc Bandwidth An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS |
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620 DNB 53.00 bkl An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS stacked transistor architecture Impedance Transistors integrated circuit packaging fully integrated class-F power amplifier power-added efficiency microwave power amplifiers CMOS integrated circuits field effect MMIC CMOS Impedance matching reconfigurable matching network output matching network frequency 700 MHz to 1200 MHz on-chip transformers Harmonic analysis total chip area Couplings Power amplifiers (PAs) tunable harmonic terminations reconfigurable harmonic termination size 0.13 mum Bandwidth |
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integrated 700-1200-mhz class-f pa with tunable harmonic terminations in 0.13- \mum cmos |
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An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS |
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A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. |
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A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. |
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A fully integrated class-F power amplifier (PA) with reconfigurable harmonic termination over a wide range of frequencies is presented. Reconfigurability is achieved by utilizing on-chip transformers as part of the output matching network. In addition, a stacked transistor architecture was used to boost the output power. The PA was fabricated in a 0.13- μm CMOS process and packaged in a 20-pin quad flat no-leads package. It was configured to operate at 700, 900, and 1200 MHz with a maximum measured saturated output power of +24.6 dBm with a power-added efficiency of 48.3%. The measured gain was 16.5 dB and was flat over the entire bandwidth. The total chip area, including pads, is 1.5 mm × 1.5 mm. |
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An Integrated 700-1200-MHz Class-F PA With Tunable Harmonic Terminations in 0.13- \mum CMOS |
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