Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure
A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Youngmin Kim [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on microwave theory and techniques - New York, NY : IEEE, 1963, 63(2015), 2, Seite 691-702 |
|---|---|
| Übergeordnetes Werk: |
volume:63 ; year:2015 ; number:2 ; pages:691-702 |
| Links: |
|---|
| DOI / URN: |
10.1109/TMTT.2014.2387846 |
|---|
| Katalog-ID: |
OLC1963489055 |
|---|
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| 520 | |a A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. | ||
| 650 | 4 | |a Millimeter-wave integrated circuits | |
| 650 | 4 | |a Impedance | |
| 650 | 4 | |a complex load-admittance | |
| 650 | 4 | |a Millimeter wave transistors | |
| 650 | 4 | |a millimeter-wave stacked-FET power amplifier design | |
| 650 | 4 | |a high-frequency stacked-FET PA MMIC | |
| 650 | 4 | |a integrated circuit design | |
| 650 | 4 | |a CMOSFET | |
| 650 | 4 | |a stacked-FET | |
| 650 | 4 | |a CMOS integrated circuits | |
| 650 | 4 | |a millimetre wave field effect transistors | |
| 650 | 4 | |a mHEMT | |
| 650 | 4 | |a high electron mobility transistors | |
| 650 | 4 | |a MOSFET | |
| 650 | 4 | |a field effect MIMIC | |
| 650 | 4 | |a MMIC power amplifiers | |
| 650 | 4 | |a compensation | |
| 650 | 4 | |a pHEMT | |
| 650 | 4 | |a PHEMTs | |
| 650 | 4 | |a power amplifier | |
| 650 | 4 | |a millimetre wave power amplifiers | |
| 650 | 4 | |a FET-stacking number | |
| 650 | 4 | |a series-connected FET | |
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10.1109/TMTT.2014.2387846 doi PQ20160617 (DE-627)OLC1963489055 (DE-599)GBVOLC1963489055 (PRQ)c1553-c6298006d77e555d93153862e6398285791d7bfa6419cf39043b396bb992232c0 (KEY)0017514520150000063000200691analysisanddesignofmillimeterwavepoweramplifierusi DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Youngmin Kim verfasserin aut Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. Millimeter-wave integrated circuits Impedance complex load-admittance Millimeter wave transistors millimeter-wave stacked-FET power amplifier design high-frequency stacked-FET PA MMIC integrated circuit design CMOSFET stacked-FET CMOS integrated circuits millimetre wave field effect transistors mHEMT high electron mobility transistors MOSFET field effect MIMIC MMIC power amplifiers compensation pHEMT PHEMTs power amplifier millimetre wave power amplifiers FET-stacking number series-connected FET Power generation Youngwoo Kwon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 2, Seite 691-702 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:2 pages:691-702 http://dx.doi.org/10.1109/TMTT.2014.2387846 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7012124 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 2 691-702 |
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10.1109/TMTT.2014.2387846 doi PQ20160617 (DE-627)OLC1963489055 (DE-599)GBVOLC1963489055 (PRQ)c1553-c6298006d77e555d93153862e6398285791d7bfa6419cf39043b396bb992232c0 (KEY)0017514520150000063000200691analysisanddesignofmillimeterwavepoweramplifierusi DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Youngmin Kim verfasserin aut Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. Millimeter-wave integrated circuits Impedance complex load-admittance Millimeter wave transistors millimeter-wave stacked-FET power amplifier design high-frequency stacked-FET PA MMIC integrated circuit design CMOSFET stacked-FET CMOS integrated circuits millimetre wave field effect transistors mHEMT high electron mobility transistors MOSFET field effect MIMIC MMIC power amplifiers compensation pHEMT PHEMTs power amplifier millimetre wave power amplifiers FET-stacking number series-connected FET Power generation Youngwoo Kwon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 2, Seite 691-702 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:2 pages:691-702 http://dx.doi.org/10.1109/TMTT.2014.2387846 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7012124 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 2 691-702 |
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10.1109/TMTT.2014.2387846 doi PQ20160617 (DE-627)OLC1963489055 (DE-599)GBVOLC1963489055 (PRQ)c1553-c6298006d77e555d93153862e6398285791d7bfa6419cf39043b396bb992232c0 (KEY)0017514520150000063000200691analysisanddesignofmillimeterwavepoweramplifierusi DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Youngmin Kim verfasserin aut Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. Millimeter-wave integrated circuits Impedance complex load-admittance Millimeter wave transistors millimeter-wave stacked-FET power amplifier design high-frequency stacked-FET PA MMIC integrated circuit design CMOSFET stacked-FET CMOS integrated circuits millimetre wave field effect transistors mHEMT high electron mobility transistors MOSFET field effect MIMIC MMIC power amplifiers compensation pHEMT PHEMTs power amplifier millimetre wave power amplifiers FET-stacking number series-connected FET Power generation Youngwoo Kwon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 2, Seite 691-702 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:2 pages:691-702 http://dx.doi.org/10.1109/TMTT.2014.2387846 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7012124 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 2 691-702 |
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10.1109/TMTT.2014.2387846 doi PQ20160617 (DE-627)OLC1963489055 (DE-599)GBVOLC1963489055 (PRQ)c1553-c6298006d77e555d93153862e6398285791d7bfa6419cf39043b396bb992232c0 (KEY)0017514520150000063000200691analysisanddesignofmillimeterwavepoweramplifierusi DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Youngmin Kim verfasserin aut Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. Millimeter-wave integrated circuits Impedance complex load-admittance Millimeter wave transistors millimeter-wave stacked-FET power amplifier design high-frequency stacked-FET PA MMIC integrated circuit design CMOSFET stacked-FET CMOS integrated circuits millimetre wave field effect transistors mHEMT high electron mobility transistors MOSFET field effect MIMIC MMIC power amplifiers compensation pHEMT PHEMTs power amplifier millimetre wave power amplifiers FET-stacking number series-connected FET Power generation Youngwoo Kwon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 2, Seite 691-702 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:2 pages:691-702 http://dx.doi.org/10.1109/TMTT.2014.2387846 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7012124 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 2 691-702 |
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10.1109/TMTT.2014.2387846 doi PQ20160617 (DE-627)OLC1963489055 (DE-599)GBVOLC1963489055 (PRQ)c1553-c6298006d77e555d93153862e6398285791d7bfa6419cf39043b396bb992232c0 (KEY)0017514520150000063000200691analysisanddesignofmillimeterwavepoweramplifierusi DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Youngmin Kim verfasserin aut Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. Millimeter-wave integrated circuits Impedance complex load-admittance Millimeter wave transistors millimeter-wave stacked-FET power amplifier design high-frequency stacked-FET PA MMIC integrated circuit design CMOSFET stacked-FET CMOS integrated circuits millimetre wave field effect transistors mHEMT high electron mobility transistors MOSFET field effect MIMIC MMIC power amplifiers compensation pHEMT PHEMTs power amplifier millimetre wave power amplifiers FET-stacking number series-connected FET Power generation Youngwoo Kwon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 63(2015), 2, Seite 691-702 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:63 year:2015 number:2 pages:691-702 http://dx.doi.org/10.1109/TMTT.2014.2387846 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7012124 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 GBV_ILN_4318 53.00 AVZ AR 63 2015 2 691-702 |
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Youngmin Kim |
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Youngmin Kim ddc 620 bkl 53.00 misc Millimeter-wave integrated circuits misc Impedance misc complex load-admittance misc Millimeter wave transistors misc millimeter-wave stacked-FET power amplifier design misc high-frequency stacked-FET PA MMIC misc integrated circuit design misc CMOSFET misc stacked-FET misc CMOS integrated circuits misc millimetre wave field effect transistors misc mHEMT misc high electron mobility transistors misc MOSFET misc field effect MIMIC misc MMIC power amplifiers misc compensation misc pHEMT misc PHEMTs misc power amplifier misc millimetre wave power amplifiers misc FET-stacking number misc series-connected FET misc Power generation Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure |
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620 DNB 53.00 bkl Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure Millimeter-wave integrated circuits Impedance complex load-admittance Millimeter wave transistors millimeter-wave stacked-FET power amplifier design high-frequency stacked-FET PA MMIC integrated circuit design CMOSFET stacked-FET CMOS integrated circuits millimetre wave field effect transistors mHEMT high electron mobility transistors MOSFET field effect MIMIC MMIC power amplifiers compensation pHEMT PHEMTs power amplifier millimetre wave power amplifiers FET-stacking number series-connected FET Power generation |
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ddc 620 bkl 53.00 misc Millimeter-wave integrated circuits misc Impedance misc complex load-admittance misc Millimeter wave transistors misc millimeter-wave stacked-FET power amplifier design misc high-frequency stacked-FET PA MMIC misc integrated circuit design misc CMOSFET misc stacked-FET misc CMOS integrated circuits misc millimetre wave field effect transistors misc mHEMT misc high electron mobility transistors misc MOSFET misc field effect MIMIC misc MMIC power amplifiers misc compensation misc pHEMT misc PHEMTs misc power amplifier misc millimetre wave power amplifiers misc FET-stacking number misc series-connected FET misc Power generation |
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ddc 620 bkl 53.00 misc Millimeter-wave integrated circuits misc Impedance misc complex load-admittance misc Millimeter wave transistors misc millimeter-wave stacked-FET power amplifier design misc high-frequency stacked-FET PA MMIC misc integrated circuit design misc CMOSFET misc stacked-FET misc CMOS integrated circuits misc millimetre wave field effect transistors misc mHEMT misc high electron mobility transistors misc MOSFET misc field effect MIMIC misc MMIC power amplifiers misc compensation misc pHEMT misc PHEMTs misc power amplifier misc millimetre wave power amplifiers misc FET-stacking number misc series-connected FET misc Power generation |
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Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure |
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analysis and design of millimeter-wave power amplifier using stacked-fet structure |
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Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure |
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A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. |
| abstractGer |
A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. |
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A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies ( f T's). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies. |
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Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure |
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