Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

Gespeichert in:

Autor*in:	Srinivasan, T [verfasserIn] Mishra, P Jangir, S.K Raman, R Sridhara Rao, D.V Rawal, D.S Muralidharan, R

Format:	Artikel
Sprache:	Englisch

Erschienen:	2015

Übergeordnetes Werk:	Enthalten in: Infrared physics & technology - Oxford [u.a.] : Pergamon Press, 1994, 70(2015), Seite 6-11
Übergeordnetes Werk:	volume:70 ; year:2015 ; pages:6-11

Links:	Volltext

DOI / URN:	10.1016/j.infrared.2014.12.001

Katalog-ID:	OLC196351646X

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title	Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)
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Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

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