Planar CMOS analog SiPMs: design, modeling, and characterization
Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in stan...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zou, Yu [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Rechteinformationen: |
Nutzungsrecht: © 2015 Taylor & Francis 2015 |
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| Schlagwörter: |
silicon photomultiplier (SiPM) |
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| Übergeordnetes Werk: |
Enthalten in: Journal of modern optics - Abingdon : Taylor & Francis, 1987, 62(2015), 20, Seite 1693 |
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| Übergeordnetes Werk: |
volume:62 ; year:2015 ; number:20 ; pages:1693 |
| Links: |
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| DOI / URN: |
10.1080/09500340.2015.1049572 |
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| 520 | |a Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. | ||
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10.1080/09500340.2015.1049572 doi PQ20160617 (DE-627)OLC1963965000 (DE-599)GBVOLC1963965000 (PRQ)i1671-7036899413693d46f77e192ad4cc33ae8438aa73dd7fec69fd59af332711610d0 (KEY)0024045120150000062002001693planarcmosanalogsipmsdesignmodelingandcharacteriza DE-627 ger DE-627 rakwb eng 530 620 DNB 33.00 bkl Zou, Yu verfasserin aut Planar CMOS analog SiPMs: design, modeling, and characterization 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. Nutzungsrecht: © 2015 Taylor & Francis 2015 single-photon sensitivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD) SPICE modeling photon counting CMOS technology CMOS Optics Silicon Diodes Sensors Analog Villa, Federica oth Bronzi, Danilo oth Tisa, Simone oth Tosi, Alberto oth Zappa, Franco oth Enthalten in Journal of modern optics Abingdon : Taylor & Francis, 1987 62(2015), 20, Seite 1693 (DE-627)130416061 (DE-600)626352-5 (DE-576)015918866 0950-0340 nnns volume:62 year:2015 number:20 pages:1693 http://dx.doi.org/10.1080/09500340.2015.1049572 Volltext http://www.tandfonline.com/doi/abs/10.1080/09500340.2015.1049572 http://search.proquest.com/docview/1722762735 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_70 GBV_ILN_4314 GBV_ILN_4318 33.00 AVZ AR 62 2015 20 1693 |
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10.1080/09500340.2015.1049572 doi PQ20160617 (DE-627)OLC1963965000 (DE-599)GBVOLC1963965000 (PRQ)i1671-7036899413693d46f77e192ad4cc33ae8438aa73dd7fec69fd59af332711610d0 (KEY)0024045120150000062002001693planarcmosanalogsipmsdesignmodelingandcharacteriza DE-627 ger DE-627 rakwb eng 530 620 DNB 33.00 bkl Zou, Yu verfasserin aut Planar CMOS analog SiPMs: design, modeling, and characterization 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. Nutzungsrecht: © 2015 Taylor & Francis 2015 single-photon sensitivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD) SPICE modeling photon counting CMOS technology CMOS Optics Silicon Diodes Sensors Analog Villa, Federica oth Bronzi, Danilo oth Tisa, Simone oth Tosi, Alberto oth Zappa, Franco oth Enthalten in Journal of modern optics Abingdon : Taylor & Francis, 1987 62(2015), 20, Seite 1693 (DE-627)130416061 (DE-600)626352-5 (DE-576)015918866 0950-0340 nnns volume:62 year:2015 number:20 pages:1693 http://dx.doi.org/10.1080/09500340.2015.1049572 Volltext http://www.tandfonline.com/doi/abs/10.1080/09500340.2015.1049572 http://search.proquest.com/docview/1722762735 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_70 GBV_ILN_4314 GBV_ILN_4318 33.00 AVZ AR 62 2015 20 1693 |
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10.1080/09500340.2015.1049572 doi PQ20160617 (DE-627)OLC1963965000 (DE-599)GBVOLC1963965000 (PRQ)i1671-7036899413693d46f77e192ad4cc33ae8438aa73dd7fec69fd59af332711610d0 (KEY)0024045120150000062002001693planarcmosanalogsipmsdesignmodelingandcharacteriza DE-627 ger DE-627 rakwb eng 530 620 DNB 33.00 bkl Zou, Yu verfasserin aut Planar CMOS analog SiPMs: design, modeling, and characterization 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. Nutzungsrecht: © 2015 Taylor & Francis 2015 single-photon sensitivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD) SPICE modeling photon counting CMOS technology CMOS Optics Silicon Diodes Sensors Analog Villa, Federica oth Bronzi, Danilo oth Tisa, Simone oth Tosi, Alberto oth Zappa, Franco oth Enthalten in Journal of modern optics Abingdon : Taylor & Francis, 1987 62(2015), 20, Seite 1693 (DE-627)130416061 (DE-600)626352-5 (DE-576)015918866 0950-0340 nnns volume:62 year:2015 number:20 pages:1693 http://dx.doi.org/10.1080/09500340.2015.1049572 Volltext http://www.tandfonline.com/doi/abs/10.1080/09500340.2015.1049572 http://search.proquest.com/docview/1722762735 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_70 GBV_ILN_4314 GBV_ILN_4318 33.00 AVZ AR 62 2015 20 1693 |
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10.1080/09500340.2015.1049572 doi PQ20160617 (DE-627)OLC1963965000 (DE-599)GBVOLC1963965000 (PRQ)i1671-7036899413693d46f77e192ad4cc33ae8438aa73dd7fec69fd59af332711610d0 (KEY)0024045120150000062002001693planarcmosanalogsipmsdesignmodelingandcharacteriza DE-627 ger DE-627 rakwb eng 530 620 DNB 33.00 bkl Zou, Yu verfasserin aut Planar CMOS analog SiPMs: design, modeling, and characterization 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. Nutzungsrecht: © 2015 Taylor & Francis 2015 single-photon sensitivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD) SPICE modeling photon counting CMOS technology CMOS Optics Silicon Diodes Sensors Analog Villa, Federica oth Bronzi, Danilo oth Tisa, Simone oth Tosi, Alberto oth Zappa, Franco oth Enthalten in Journal of modern optics Abingdon : Taylor & Francis, 1987 62(2015), 20, Seite 1693 (DE-627)130416061 (DE-600)626352-5 (DE-576)015918866 0950-0340 nnns volume:62 year:2015 number:20 pages:1693 http://dx.doi.org/10.1080/09500340.2015.1049572 Volltext http://www.tandfonline.com/doi/abs/10.1080/09500340.2015.1049572 http://search.proquest.com/docview/1722762735 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_70 GBV_ILN_4314 GBV_ILN_4318 33.00 AVZ AR 62 2015 20 1693 |
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10.1080/09500340.2015.1049572 doi PQ20160617 (DE-627)OLC1963965000 (DE-599)GBVOLC1963965000 (PRQ)i1671-7036899413693d46f77e192ad4cc33ae8438aa73dd7fec69fd59af332711610d0 (KEY)0024045120150000062002001693planarcmosanalogsipmsdesignmodelingandcharacteriza DE-627 ger DE-627 rakwb eng 530 620 DNB 33.00 bkl Zou, Yu verfasserin aut Planar CMOS analog SiPMs: design, modeling, and characterization 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. Nutzungsrecht: © 2015 Taylor & Francis 2015 single-photon sensitivity silicon photomultiplier (SiPM) single-photon avalanche diode (SPAD) SPICE modeling photon counting CMOS technology CMOS Optics Silicon Diodes Sensors Analog Villa, Federica oth Bronzi, Danilo oth Tisa, Simone oth Tosi, Alberto oth Zappa, Franco oth Enthalten in Journal of modern optics Abingdon : Taylor & Francis, 1987 62(2015), 20, Seite 1693 (DE-627)130416061 (DE-600)626352-5 (DE-576)015918866 0950-0340 nnns volume:62 year:2015 number:20 pages:1693 http://dx.doi.org/10.1080/09500340.2015.1049572 Volltext http://www.tandfonline.com/doi/abs/10.1080/09500340.2015.1049572 http://search.proquest.com/docview/1722762735 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_70 GBV_ILN_4314 GBV_ILN_4318 33.00 AVZ AR 62 2015 20 1693 |
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Planar CMOS analog SiPMs: design, modeling, and characterization |
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Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. |
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Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. |
| abstract_unstemmed |
Silicon photomultipliers (SiPMs) are large area detectors consisting of an array of single-photon-sensitive microcells, which make SiPMs extremely attractive to substitute the photomultiplier tubes in many applications. We present the design, fabrication, and characterization of analog SiPMs in standard planar 0.35 μm CMOS technology, with about 1 mm × 1 mm total area and different kinds of microcells, based on single-photon avalanche diodes with 30 μm diameter reaching 21.0% fill-factor (FF), 50 μm diameter (FF = 58.3%) or 50 μm square active area with rounded corner of 5 μm radius (FF = 73.7%). We also developed the electrical SPICE model for CMOS SiPMs. Our CMOS SiPMs have 25 V breakdown voltage, in line with most commercial SiPMs and higher gain (8.8 × 10 6 , 13.2 × 10 6 , and 15.0 × 10 6 , respectively). Although dark count rate density is slightly higher than state-of-the-art analog SiPMs, the proposed standard CMOS processing opens the feasibility of integration with active electronics, for switching hot pixels off, drastically reducing the overall dark count rate, or for further on-chip processing. |
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