Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles

Gespeichert in:

Autor*in:	Lim, Jin Hong [verfasserIn] Kim, Jeong Jin Yang, Jeon Wook

Format:	Artikel
Sprache:	Englisch

Erschienen:	2015

Übergeordnetes Werk:	Enthalten in: Microelectronics reliability - Amsterdam [u.a.] : Elsevier, 1964, 55(2015), 12, Seite 2565-2568
Übergeordnetes Werk:	volume:55 ; year:2015 ; number:12 ; pages:2565-2568

Links:	Volltext

DOI / URN:	10.1016/j.microrel.2015.10.005

Katalog-ID:	OLC1964222702

Internformat


LEADER	01000caa a2200265 4500
001	OLC1964222702
003	DE-627
005	20220221041355.0
007	tu
008	160206s2015 xx \|\|\|\|\| 00\| \|\|eng c
024	7		\|a 10.1016/j.microrel.2015.10.005 \|2 doi
028	5	2	\|a PQ20160617
035			\|a (DE-627)OLC1964222702
035			\|a (DE-599)GBVOLC1964222702
035			\|a (PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030
035			\|a (KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 620 \|q DNB
084			\|a 53.55 \|2 bkl
084			\|a 53.52 \|2 bkl
084			\|a 50.16 \|2 bkl
100	1		\|a Lim, Jin Hong \|e verfasserin \|4 aut
245	1	0	\|a Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles
264		1	\|c 2015
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
700	1		\|a Kim, Jeong Jin \|4 oth
700	1		\|a Yang, Jeon Wook \|4 oth
773	0	8	\|i Enthalten in \|t Microelectronics reliability \|d Amsterdam [u.a.] : Elsevier, 1964 \|g 55(2015), 12, Seite 2565-2568 \|w (DE-627)129596949 \|w (DE-600)240853-3 \|w (DE-576)015090116 \|x 0026-2714 \|7 nnns
773	1	8	\|g volume:55 \|g year:2015 \|g number:12 \|g pages:2565-2568
856	4	1	\|u http://dx.doi.org/10.1016/j.microrel.2015.10.005 \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_70
936	b	k	\|a 53.55 \|q AVZ
936	b	k	\|a 53.52 \|q AVZ
936	b	k	\|a 50.16 \|q AVZ
951			\|a AR
952			\|d 55 \|j 2015 \|e 12 \|h 2565-2568

Indexfelder

author_variant	j h l jh jhl
matchkey_str	article:00262714:2015----::mrvdufcmrhlgoailiuhicnatoagnahtrs
hierarchy_sort_str	2015
bklnumber	53.55 53.52 50.16
publishDate	2015
allfields	10.1016/j.microrel.2015.10.005 doi PQ20160617 (DE-627)OLC1964222702 (DE-599)GBVOLC1964222702 (PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030 (KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo DE-627 ger DE-627 rakwb eng 620 DNB 53.55 bkl 53.52 bkl 50.16 bkl Lim, Jin Hong verfasserin aut Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kim, Jeong Jin oth Yang, Jeon Wook oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 55(2015), 12, Seite 2565-2568 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:55 year:2015 number:12 pages:2565-2568 http://dx.doi.org/10.1016/j.microrel.2015.10.005 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 55 2015 12 2565-2568
spelling	10.1016/j.microrel.2015.10.005 doi PQ20160617 (DE-627)OLC1964222702 (DE-599)GBVOLC1964222702 (PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030 (KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo DE-627 ger DE-627 rakwb eng 620 DNB 53.55 bkl 53.52 bkl 50.16 bkl Lim, Jin Hong verfasserin aut Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kim, Jeong Jin oth Yang, Jeon Wook oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 55(2015), 12, Seite 2565-2568 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:55 year:2015 number:12 pages:2565-2568 http://dx.doi.org/10.1016/j.microrel.2015.10.005 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 55 2015 12 2565-2568
allfields_unstemmed	10.1016/j.microrel.2015.10.005 doi PQ20160617 (DE-627)OLC1964222702 (DE-599)GBVOLC1964222702 (PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030 (KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo DE-627 ger DE-627 rakwb eng 620 DNB 53.55 bkl 53.52 bkl 50.16 bkl Lim, Jin Hong verfasserin aut Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kim, Jeong Jin oth Yang, Jeon Wook oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 55(2015), 12, Seite 2565-2568 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:55 year:2015 number:12 pages:2565-2568 http://dx.doi.org/10.1016/j.microrel.2015.10.005 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 55 2015 12 2565-2568
allfieldsGer	10.1016/j.microrel.2015.10.005 doi PQ20160617 (DE-627)OLC1964222702 (DE-599)GBVOLC1964222702 (PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030 (KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo DE-627 ger DE-627 rakwb eng 620 DNB 53.55 bkl 53.52 bkl 50.16 bkl Lim, Jin Hong verfasserin aut Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kim, Jeong Jin oth Yang, Jeon Wook oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 55(2015), 12, Seite 2565-2568 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:55 year:2015 number:12 pages:2565-2568 http://dx.doi.org/10.1016/j.microrel.2015.10.005 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 55 2015 12 2565-2568
allfieldsSound	10.1016/j.microrel.2015.10.005 doi PQ20160617 (DE-627)OLC1964222702 (DE-599)GBVOLC1964222702 (PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030 (KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo DE-627 ger DE-627 rakwb eng 620 DNB 53.55 bkl 53.52 bkl 50.16 bkl Lim, Jin Hong verfasserin aut Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Kim, Jeong Jin oth Yang, Jeon Wook oth Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1964 55(2015), 12, Seite 2565-2568 (DE-627)129596949 (DE-600)240853-3 (DE-576)015090116 0026-2714 nnns volume:55 year:2015 number:12 pages:2565-2568 http://dx.doi.org/10.1016/j.microrel.2015.10.005 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 53.55 AVZ 53.52 AVZ 50.16 AVZ AR 55 2015 12 2565-2568
language	English
source	Enthalten in Microelectronics reliability 55(2015), 12, Seite 2565-2568 volume:55 year:2015 number:12 pages:2565-2568
sourceStr	Enthalten in Microelectronics reliability 55(2015), 12, Seite 2565-2568 volume:55 year:2015 number:12 pages:2565-2568
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	620
isfreeaccess_bool	false
container_title	Microelectronics reliability
authorswithroles_txt_mv	Lim, Jin Hong @@aut@@ Kim, Jeong Jin @@oth@@ Yang, Jeon Wook @@oth@@
publishDateDaySort_date	2015-01-01T00:00:00Z
hierarchy_top_id	129596949
dewey-sort	3620
id	OLC1964222702
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1964222702</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220221041355.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.microrel.2015.10.005</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1964222702</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1964222702</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.55</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.52</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.16</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lim, Jin Hong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Jeong Jin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Jeon Wook</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Microelectronics reliability</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1964</subfield><subfield code="g">55(2015), 12, Seite 2565-2568</subfield><subfield code="w">(DE-627)129596949</subfield><subfield code="w">(DE-600)240853-3</subfield><subfield code="w">(DE-576)015090116</subfield><subfield code="x">0026-2714</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:55</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:12</subfield><subfield code="g">pages:2565-2568</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1016/j.microrel.2015.10.005</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.55</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.52</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.16</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">55</subfield><subfield code="j">2015</subfield><subfield code="e">12</subfield><subfield code="h">2565-2568</subfield></datafield></record></collection>
author	Lim, Jin Hong
spellingShingle	Lim, Jin Hong ddc 620 bkl 53.55 bkl 53.52 bkl 50.16 Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles
authorStr	Lim, Jin Hong
ppnlink_with_tag_str_mv	@@773@@(DE-627)129596949
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0026-2714
topic_title	620 DNB 53.55 bkl 53.52 bkl 50.16 bkl Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles
topic	ddc 620 bkl 53.55 bkl 53.52 bkl 50.16
topic_unstemmed	ddc 620 bkl 53.55 bkl 53.52 bkl 50.16
topic_browse	ddc 620 bkl 53.55 bkl 53.52 bkl 50.16
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	j j k jj jjk j w y jw jwy
hierarchy_parent_title	Microelectronics reliability
hierarchy_parent_id	129596949
dewey-tens	620 - Engineering
hierarchy_top_title	Microelectronics reliability
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129596949 (DE-600)240853-3 (DE-576)015090116
title	Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles
ctrlnum	(DE-627)OLC1964222702 (DE-599)GBVOLC1964222702 (PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030 (KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo
title_full	Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles
author_sort	Lim, Jin Hong
journal	Microelectronics reliability
journalStr	Microelectronics reliability
lang_code	eng
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2015
contenttype_str_mv	txt
container_start_page	2565
author_browse	Lim, Jin Hong
container_volume	55
class	620 DNB 53.55 bkl 53.52 bkl 50.16 bkl
format_se	Aufsätze
author-letter	Lim, Jin Hong
doi_str_mv	10.1016/j.microrel.2015.10.005
dewey-full	620
title_sort	improved surface morphology of a ti/al/ni/au ohmic contact for algan/gan heterostructure by al2o3 particles
title_auth	Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70
container_issue	12
title_short	Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles
url	http://dx.doi.org/10.1016/j.microrel.2015.10.005
remote_bool	false
author2	Kim, Jeong Jin Yang, Jeon Wook
author2Str	Kim, Jeong Jin Yang, Jeon Wook
ppnlink	129596949
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth
doi_str	10.1016/j.microrel.2015.10.005
up_date	2024-07-04T07:31:36.436Z
_version_	1803632819764723712
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1964222702</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220221041355.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.microrel.2015.10.005</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1964222702</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1964222702</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c1075-7e5ec8b2027d71f3418e6a89c250c06a6f5326182b5b891143d1091b08e629030</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0027825420150000055001202565improvedsurfacemorphologyofatialniauohmiccontactfo</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.55</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.52</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.16</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lim, Jin Hong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Jeong Jin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Jeon Wook</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Microelectronics reliability</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier, 1964</subfield><subfield code="g">55(2015), 12, Seite 2565-2568</subfield><subfield code="w">(DE-627)129596949</subfield><subfield code="w">(DE-600)240853-3</subfield><subfield code="w">(DE-576)015090116</subfield><subfield code="x">0026-2714</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:55</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:12</subfield><subfield code="g">pages:2565-2568</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1016/j.microrel.2015.10.005</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.55</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.52</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.16</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">55</subfield><subfield code="j">2015</subfield><subfield code="e">12</subfield><subfield code="h">2565-2568</subfield></datafield></record></collection>
score	7.400488

Nicht das Richtige dabei?

Schreiben Sie uns!

Improved surface morphology of a Ti/Al/Ni/Au ohmic contact for AlGaN/GaN heterostructure by Al2O3 particles

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?