Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection
We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ren, Min [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE journal of quantum electronics - New York, NY : IEEE, 1965, 51(2015), 11, Seite 1-6 |
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| Übergeordnetes Werk: |
volume:51 ; year:2015 ; number:11 ; pages:1-6 |
| Links: |
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| DOI / URN: |
10.1109/JQE.2015.2491648 |
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| Katalog-ID: |
OLC1965821553 |
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| 520 | |a We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda = 405 </tex-math></inline-formula> nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to <inline-formula> <tex-math notation="LaTeX">\sim 10^{-6} </tex-math></inline-formula>/gate with a <inline-formula> <tex-math notation="LaTeX">\sim 5 </tex-math></inline-formula> ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K. | ||
| 650 | 4 | |a afterpulsing | |
| 650 | 4 | |a Annealing | |
| 650 | 4 | |a single photon avalanche photodiodes | |
| 650 | 4 | |a Logic gates | |
| 650 | 4 | |a Photonics | |
| 650 | 4 | |a photodetectors | |
| 650 | 4 | |a Yttrium | |
| 650 | 4 | |a Gallium arsenide | |
| 650 | 4 | |a Passivation | |
| 650 | 4 | |a Avalanche photodiodes | |
| 700 | 1 | |a Zheng, Xiaoguang |4 oth | |
| 700 | 1 | |a Chen, Yaojia |4 oth | |
| 700 | 1 | |a Chen, Xiao Jie |4 oth | |
| 700 | 1 | |a Johnson, Erik B |4 oth | |
| 700 | 1 | |a Christian, James F |4 oth | |
| 700 | 1 | |a Campbell, Joe C |4 oth | |
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10.1109/JQE.2015.2491648 doi PQ20160617 (DE-627)OLC1965821553 (DE-599)GBVOLC1965821553 (PRQ)c1301-a808cdaf4d357a8b0706af6fb39a0dd6b5e98adda027fba742c83415732dc8250 (KEY)0049496820150000051001100001al08ga02asavalanchephotodiodesforsinglephotondetec DE-627 ger DE-627 rakwb eng 620 DNB Ren, Min verfasserin aut Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda = 405 </tex-math></inline-formula> nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to <inline-formula> <tex-math notation="LaTeX">\sim 10^{-6} </tex-math></inline-formula>/gate with a <inline-formula> <tex-math notation="LaTeX">\sim 5 </tex-math></inline-formula> ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K. afterpulsing Annealing single photon avalanche photodiodes Logic gates Photonics photodetectors Yttrium Gallium arsenide Passivation Avalanche photodiodes Zheng, Xiaoguang oth Chen, Yaojia oth Chen, Xiao Jie oth Johnson, Erik B oth Christian, James F oth Campbell, Joe C oth Enthalten in IEEE journal of quantum electronics New York, NY : IEEE, 1965 51(2015), 11, Seite 1-6 (DE-627)12960299X (DE-600)241641-4 (DE-576)015096807 0018-9197 nnns volume:51 year:2015 number:11 pages:1-6 http://dx.doi.org/10.1109/JQE.2015.2491648 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7299596 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2061 GBV_ILN_4306 AR 51 2015 11 1-6 |
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10.1109/JQE.2015.2491648 doi PQ20160617 (DE-627)OLC1965821553 (DE-599)GBVOLC1965821553 (PRQ)c1301-a808cdaf4d357a8b0706af6fb39a0dd6b5e98adda027fba742c83415732dc8250 (KEY)0049496820150000051001100001al08ga02asavalanchephotodiodesforsinglephotondetec DE-627 ger DE-627 rakwb eng 620 DNB Ren, Min verfasserin aut Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda = 405 </tex-math></inline-formula> nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to <inline-formula> <tex-math notation="LaTeX">\sim 10^{-6} </tex-math></inline-formula>/gate with a <inline-formula> <tex-math notation="LaTeX">\sim 5 </tex-math></inline-formula> ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K. afterpulsing Annealing single photon avalanche photodiodes Logic gates Photonics photodetectors Yttrium Gallium arsenide Passivation Avalanche photodiodes Zheng, Xiaoguang oth Chen, Yaojia oth Chen, Xiao Jie oth Johnson, Erik B oth Christian, James F oth Campbell, Joe C oth Enthalten in IEEE journal of quantum electronics New York, NY : IEEE, 1965 51(2015), 11, Seite 1-6 (DE-627)12960299X (DE-600)241641-4 (DE-576)015096807 0018-9197 nnns volume:51 year:2015 number:11 pages:1-6 http://dx.doi.org/10.1109/JQE.2015.2491648 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7299596 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2061 GBV_ILN_4306 AR 51 2015 11 1-6 |
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10.1109/JQE.2015.2491648 doi PQ20160617 (DE-627)OLC1965821553 (DE-599)GBVOLC1965821553 (PRQ)c1301-a808cdaf4d357a8b0706af6fb39a0dd6b5e98adda027fba742c83415732dc8250 (KEY)0049496820150000051001100001al08ga02asavalanchephotodiodesforsinglephotondetec DE-627 ger DE-627 rakwb eng 620 DNB Ren, Min verfasserin aut Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda = 405 </tex-math></inline-formula> nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to <inline-formula> <tex-math notation="LaTeX">\sim 10^{-6} </tex-math></inline-formula>/gate with a <inline-formula> <tex-math notation="LaTeX">\sim 5 </tex-math></inline-formula> ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K. afterpulsing Annealing single photon avalanche photodiodes Logic gates Photonics photodetectors Yttrium Gallium arsenide Passivation Avalanche photodiodes Zheng, Xiaoguang oth Chen, Yaojia oth Chen, Xiao Jie oth Johnson, Erik B oth Christian, James F oth Campbell, Joe C oth Enthalten in IEEE journal of quantum electronics New York, NY : IEEE, 1965 51(2015), 11, Seite 1-6 (DE-627)12960299X (DE-600)241641-4 (DE-576)015096807 0018-9197 nnns volume:51 year:2015 number:11 pages:1-6 http://dx.doi.org/10.1109/JQE.2015.2491648 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7299596 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2061 GBV_ILN_4306 AR 51 2015 11 1-6 |
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10.1109/JQE.2015.2491648 doi PQ20160617 (DE-627)OLC1965821553 (DE-599)GBVOLC1965821553 (PRQ)c1301-a808cdaf4d357a8b0706af6fb39a0dd6b5e98adda027fba742c83415732dc8250 (KEY)0049496820150000051001100001al08ga02asavalanchephotodiodesforsinglephotondetec DE-627 ger DE-627 rakwb eng 620 DNB Ren, Min verfasserin aut Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda = 405 </tex-math></inline-formula> nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to <inline-formula> <tex-math notation="LaTeX">\sim 10^{-6} </tex-math></inline-formula>/gate with a <inline-formula> <tex-math notation="LaTeX">\sim 5 </tex-math></inline-formula> ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K. afterpulsing Annealing single photon avalanche photodiodes Logic gates Photonics photodetectors Yttrium Gallium arsenide Passivation Avalanche photodiodes Zheng, Xiaoguang oth Chen, Yaojia oth Chen, Xiao Jie oth Johnson, Erik B oth Christian, James F oth Campbell, Joe C oth Enthalten in IEEE journal of quantum electronics New York, NY : IEEE, 1965 51(2015), 11, Seite 1-6 (DE-627)12960299X (DE-600)241641-4 (DE-576)015096807 0018-9197 nnns volume:51 year:2015 number:11 pages:1-6 http://dx.doi.org/10.1109/JQE.2015.2491648 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7299596 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_59 GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_2061 GBV_ILN_4306 AR 51 2015 11 1-6 |
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Ren, Min @@aut@@ Zheng, Xiaoguang @@oth@@ Chen, Yaojia @@oth@@ Chen, Xiao Jie @@oth@@ Johnson, Erik B @@oth@@ Christian, James F @@oth@@ Campbell, Joe C @@oth@@ |
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Ren, Min |
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Ren, Min ddc 620 misc afterpulsing misc Annealing misc single photon avalanche photodiodes misc Logic gates misc Photonics misc photodetectors misc Yttrium misc Gallium arsenide misc Passivation misc Avalanche photodiodes Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection |
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620 DNB Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection afterpulsing Annealing single photon avalanche photodiodes Logic gates Photonics photodetectors Yttrium Gallium arsenide Passivation Avalanche photodiodes |
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Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection |
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Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection |
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Ren, Min |
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10.1109/JQE.2015.2491648 |
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al0.8ga0.2as avalanche photodiodes for single-photon detection |
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Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection |
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We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda = 405 </tex-math></inline-formula> nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to <inline-formula> <tex-math notation="LaTeX">\sim 10^{-6} </tex-math></inline-formula>/gate with a <inline-formula> <tex-math notation="LaTeX">\sim 5 </tex-math></inline-formula> ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K. |
| abstractGer |
We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda = 405 </tex-math></inline-formula> nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to <inline-formula> <tex-math notation="LaTeX">\sim 10^{-6} </tex-math></inline-formula>/gate with a <inline-formula> <tex-math notation="LaTeX">\sim 5 </tex-math></inline-formula> ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K. |
| abstract_unstemmed |
We report Al 0.8 Ga 0.2 As recessed-window single-photon avalanche photodiodes with high internal single-photon detection efficiency and low dark count probability. External quantum efficiency was increased by a factor of 2 at <inline-formula> <tex-math notation="LaTeX">\lambda = 405 </tex-math></inline-formula> nm. Annealing in arsine with hydrogen carrier gas reduced the dark count probability by a factor of 100, to <inline-formula> <tex-math notation="LaTeX">\sim 10^{-6} </tex-math></inline-formula>/gate with a <inline-formula> <tex-math notation="LaTeX">\sim 5 </tex-math></inline-formula> ns gate, at room temperature. The activation energies of primary carrier traps, which give rise to afterpulsing, are extracted in a temperature range from 150 to 200 K. |
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Al0.8Ga0.2As Avalanche Photodiodes for Single-Photon Detection |
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http://dx.doi.org/10.1109/JQE.2015.2491648 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7299596 |
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Zheng, Xiaoguang Chen, Yaojia Chen, Xiao Jie Johnson, Erik B Christian, James F Campbell, Joe C |
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