Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology
Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the S...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Berube, Benoit-Louis [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
single photon avalanche diode (SPAD) 3D single photon counting module time-correlated single photon counting (TCSPC) |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on nuclear science - New York, NY : IEEE, 1963, 62(2015), 3, Seite 710-718 |
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| Übergeordnetes Werk: |
volume:62 ; year:2015 ; number:3 ; pages:710-718 |
| Links: |
|---|
| DOI / URN: |
10.1109/TNS.2015.2424852 |
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| Katalog-ID: |
OLC1966224141 |
|---|
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| 245 | 1 | 0 | |a Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology |
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| 520 | |a Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. | ||
| 650 | 4 | |a virtual guard ring | |
| 650 | 4 | |a size 0.8 mum | |
| 650 | 4 | |a radiation detectors | |
| 650 | 4 | |a photon counting | |
| 650 | 4 | |a ancillary electronics | |
| 650 | 4 | |a Measurement by laser beam | |
| 650 | 4 | |a timing resolution | |
| 650 | 4 | |a PET | |
| 650 | 4 | |a Arrays | |
| 650 | 4 | |a silicon radiation detectors | |
| 650 | 4 | |a n-well cathode | |
| 650 | 4 | |a SiPM | |
| 650 | 4 | |a diffusion-based guard ring | |
| 650 | 4 | |a single photon avalanche diode (SPAD) | |
| 650 | 4 | |a temperature 293 K to 298 K | |
| 650 | 4 | |a CMOS imager | |
| 650 | 4 | |a photosensitive area | |
| 650 | 4 | |a anode-cathode spacing | |
| 650 | 4 | |a Junctions | |
| 650 | 4 | |a Timing | |
| 650 | 4 | |a SPAD array | |
| 650 | 4 | |a 3D single photon counting module | |
| 650 | 4 | |a Temperature measurement | |
| 650 | 4 | |a Photonics | |
| 650 | 4 | |a TOF | |
| 650 | 4 | |a 3D vertical integration | |
| 650 | 4 | |a CMOS integrated circuits | |
| 650 | 4 | |a positron emission tomography | |
| 650 | 4 | |a time-correlated single photon counting (TCSPC) | |
| 650 | 4 | |a crosstalk | |
| 650 | 4 | |a photon detection efficiency | |
| 650 | 4 | |a readout electronics | |
| 650 | 4 | |a dark count rate | |
| 650 | 4 | |a single photon avalanche diodes | |
| 650 | 4 | |a single photon counting module | |
| 650 | 4 | |a photon timing | |
| 650 | 4 | |a SPAD structures | |
| 650 | 4 | |a FWHM | |
| 650 | 4 | |a Afterpulsing | |
| 650 | 4 | |a avalanche diodes | |
| 650 | 4 | |a Teledyne DALSA high-voltage CMOS technology | |
| 700 | 1 | |a Rheaume, Vincent-Philippe |4 oth | |
| 700 | 1 | |a Parent, Samuel |4 oth | |
| 700 | 1 | |a Maurais, Luc |4 oth | |
| 700 | 1 | |a Therrien, Audrey Corbeil |4 oth | |
| 700 | 1 | |a Charette, Paul G |4 oth | |
| 700 | 1 | |a Charlebois, Serge A |4 oth | |
| 700 | 1 | |a Fontaine, Rejean |4 oth | |
| 700 | 1 | |a Pratte, Jean-Francois |4 oth | |
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10.1109/TNS.2015.2424852 doi PQ20160617 (DE-627)OLC1966224141 (DE-599)GBVOLC1966224141 (PRQ)c704-f1900b76780965fb730120d91cf3f17e2e8eab8aad8e82ba7ee16da1f55adc6f0 (KEY)0054996720150000062000300710implementationstudyofsinglephotonavalanchediodessp DE-627 ger DE-627 rakwb eng 620 DNB Berube, Benoit-Louis verfasserin aut Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. virtual guard ring size 0.8 mum radiation detectors photon counting ancillary electronics Measurement by laser beam timing resolution PET Arrays silicon radiation detectors n-well cathode SiPM diffusion-based guard ring single photon avalanche diode (SPAD) temperature 293 K to 298 K CMOS imager photosensitive area anode-cathode spacing Junctions Timing SPAD array 3D single photon counting module Temperature measurement Photonics TOF 3D vertical integration CMOS integrated circuits positron emission tomography time-correlated single photon counting (TCSPC) crosstalk photon detection efficiency readout electronics dark count rate single photon avalanche diodes single photon counting module photon timing SPAD structures FWHM Afterpulsing avalanche diodes Teledyne DALSA high-voltage CMOS technology Rheaume, Vincent-Philippe oth Parent, Samuel oth Maurais, Luc oth Therrien, Audrey Corbeil oth Charette, Paul G oth Charlebois, Serge A oth Fontaine, Rejean oth Pratte, Jean-Francois oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 62(2015), 3, Seite 710-718 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:62 year:2015 number:3 pages:710-718 http://dx.doi.org/10.1109/TNS.2015.2424852 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7117471 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 62 2015 3 710-718 |
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10.1109/TNS.2015.2424852 doi PQ20160617 (DE-627)OLC1966224141 (DE-599)GBVOLC1966224141 (PRQ)c704-f1900b76780965fb730120d91cf3f17e2e8eab8aad8e82ba7ee16da1f55adc6f0 (KEY)0054996720150000062000300710implementationstudyofsinglephotonavalanchediodessp DE-627 ger DE-627 rakwb eng 620 DNB Berube, Benoit-Louis verfasserin aut Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. virtual guard ring size 0.8 mum radiation detectors photon counting ancillary electronics Measurement by laser beam timing resolution PET Arrays silicon radiation detectors n-well cathode SiPM diffusion-based guard ring single photon avalanche diode (SPAD) temperature 293 K to 298 K CMOS imager photosensitive area anode-cathode spacing Junctions Timing SPAD array 3D single photon counting module Temperature measurement Photonics TOF 3D vertical integration CMOS integrated circuits positron emission tomography time-correlated single photon counting (TCSPC) crosstalk photon detection efficiency readout electronics dark count rate single photon avalanche diodes single photon counting module photon timing SPAD structures FWHM Afterpulsing avalanche diodes Teledyne DALSA high-voltage CMOS technology Rheaume, Vincent-Philippe oth Parent, Samuel oth Maurais, Luc oth Therrien, Audrey Corbeil oth Charette, Paul G oth Charlebois, Serge A oth Fontaine, Rejean oth Pratte, Jean-Francois oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 62(2015), 3, Seite 710-718 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:62 year:2015 number:3 pages:710-718 http://dx.doi.org/10.1109/TNS.2015.2424852 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7117471 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 62 2015 3 710-718 |
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10.1109/TNS.2015.2424852 doi PQ20160617 (DE-627)OLC1966224141 (DE-599)GBVOLC1966224141 (PRQ)c704-f1900b76780965fb730120d91cf3f17e2e8eab8aad8e82ba7ee16da1f55adc6f0 (KEY)0054996720150000062000300710implementationstudyofsinglephotonavalanchediodessp DE-627 ger DE-627 rakwb eng 620 DNB Berube, Benoit-Louis verfasserin aut Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. virtual guard ring size 0.8 mum radiation detectors photon counting ancillary electronics Measurement by laser beam timing resolution PET Arrays silicon radiation detectors n-well cathode SiPM diffusion-based guard ring single photon avalanche diode (SPAD) temperature 293 K to 298 K CMOS imager photosensitive area anode-cathode spacing Junctions Timing SPAD array 3D single photon counting module Temperature measurement Photonics TOF 3D vertical integration CMOS integrated circuits positron emission tomography time-correlated single photon counting (TCSPC) crosstalk photon detection efficiency readout electronics dark count rate single photon avalanche diodes single photon counting module photon timing SPAD structures FWHM Afterpulsing avalanche diodes Teledyne DALSA high-voltage CMOS technology Rheaume, Vincent-Philippe oth Parent, Samuel oth Maurais, Luc oth Therrien, Audrey Corbeil oth Charette, Paul G oth Charlebois, Serge A oth Fontaine, Rejean oth Pratte, Jean-Francois oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 62(2015), 3, Seite 710-718 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:62 year:2015 number:3 pages:710-718 http://dx.doi.org/10.1109/TNS.2015.2424852 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7117471 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 62 2015 3 710-718 |
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10.1109/TNS.2015.2424852 doi PQ20160617 (DE-627)OLC1966224141 (DE-599)GBVOLC1966224141 (PRQ)c704-f1900b76780965fb730120d91cf3f17e2e8eab8aad8e82ba7ee16da1f55adc6f0 (KEY)0054996720150000062000300710implementationstudyofsinglephotonavalanchediodessp DE-627 ger DE-627 rakwb eng 620 DNB Berube, Benoit-Louis verfasserin aut Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. virtual guard ring size 0.8 mum radiation detectors photon counting ancillary electronics Measurement by laser beam timing resolution PET Arrays silicon radiation detectors n-well cathode SiPM diffusion-based guard ring single photon avalanche diode (SPAD) temperature 293 K to 298 K CMOS imager photosensitive area anode-cathode spacing Junctions Timing SPAD array 3D single photon counting module Temperature measurement Photonics TOF 3D vertical integration CMOS integrated circuits positron emission tomography time-correlated single photon counting (TCSPC) crosstalk photon detection efficiency readout electronics dark count rate single photon avalanche diodes single photon counting module photon timing SPAD structures FWHM Afterpulsing avalanche diodes Teledyne DALSA high-voltage CMOS technology Rheaume, Vincent-Philippe oth Parent, Samuel oth Maurais, Luc oth Therrien, Audrey Corbeil oth Charette, Paul G oth Charlebois, Serge A oth Fontaine, Rejean oth Pratte, Jean-Francois oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 62(2015), 3, Seite 710-718 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:62 year:2015 number:3 pages:710-718 http://dx.doi.org/10.1109/TNS.2015.2424852 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7117471 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 62 2015 3 710-718 |
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10.1109/TNS.2015.2424852 doi PQ20160617 (DE-627)OLC1966224141 (DE-599)GBVOLC1966224141 (PRQ)c704-f1900b76780965fb730120d91cf3f17e2e8eab8aad8e82ba7ee16da1f55adc6f0 (KEY)0054996720150000062000300710implementationstudyofsinglephotonavalanchediodessp DE-627 ger DE-627 rakwb eng 620 DNB Berube, Benoit-Louis verfasserin aut Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. virtual guard ring size 0.8 mum radiation detectors photon counting ancillary electronics Measurement by laser beam timing resolution PET Arrays silicon radiation detectors n-well cathode SiPM diffusion-based guard ring single photon avalanche diode (SPAD) temperature 293 K to 298 K CMOS imager photosensitive area anode-cathode spacing Junctions Timing SPAD array 3D single photon counting module Temperature measurement Photonics TOF 3D vertical integration CMOS integrated circuits positron emission tomography time-correlated single photon counting (TCSPC) crosstalk photon detection efficiency readout electronics dark count rate single photon avalanche diodes single photon counting module photon timing SPAD structures FWHM Afterpulsing avalanche diodes Teledyne DALSA high-voltage CMOS technology Rheaume, Vincent-Philippe oth Parent, Samuel oth Maurais, Luc oth Therrien, Audrey Corbeil oth Charette, Paul G oth Charlebois, Serge A oth Fontaine, Rejean oth Pratte, Jean-Francois oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 62(2015), 3, Seite 710-718 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:62 year:2015 number:3 pages:710-718 http://dx.doi.org/10.1109/TNS.2015.2424852 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7117471 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 62 2015 3 710-718 |
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virtual guard ring size 0.8 mum radiation detectors photon counting ancillary electronics Measurement by laser beam timing resolution PET Arrays silicon radiation detectors n-well cathode SiPM diffusion-based guard ring single photon avalanche diode (SPAD) temperature 293 K to 298 K CMOS imager photosensitive area anode-cathode spacing Junctions Timing SPAD array 3D single photon counting module Temperature measurement Photonics TOF 3D vertical integration CMOS integrated circuits positron emission tomography time-correlated single photon counting (TCSPC) crosstalk photon detection efficiency readout electronics dark count rate single photon avalanche diodes single photon counting module photon timing SPAD structures FWHM Afterpulsing avalanche diodes Teledyne DALSA high-voltage CMOS technology |
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Berube, Benoit-Louis @@aut@@ Rheaume, Vincent-Philippe @@oth@@ Parent, Samuel @@oth@@ Maurais, Luc @@oth@@ Therrien, Audrey Corbeil @@oth@@ Charette, Paul G @@oth@@ Charlebois, Serge A @@oth@@ Fontaine, Rejean @@oth@@ Pratte, Jean-Francois @@oth@@ |
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Berube, Benoit-Louis ddc 620 misc virtual guard ring misc size 0.8 mum misc radiation detectors misc photon counting misc ancillary electronics misc Measurement by laser beam misc timing resolution misc PET misc Arrays misc silicon radiation detectors misc n-well cathode misc SiPM misc diffusion-based guard ring misc single photon avalanche diode (SPAD) misc temperature 293 K to 298 K misc CMOS imager misc photosensitive area misc anode-cathode spacing misc Junctions misc Timing misc SPAD array misc 3D single photon counting module misc Temperature measurement misc Photonics misc TOF misc 3D vertical integration misc CMOS integrated circuits misc positron emission tomography misc time-correlated single photon counting (TCSPC) misc crosstalk misc photon detection efficiency misc readout electronics misc dark count rate misc single photon avalanche diodes misc single photon counting module misc photon timing misc SPAD structures misc FWHM misc Afterpulsing misc avalanche diodes misc Teledyne DALSA high-voltage CMOS technology Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology |
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620 DNB Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology virtual guard ring size 0.8 mum radiation detectors photon counting ancillary electronics Measurement by laser beam timing resolution PET Arrays silicon radiation detectors n-well cathode SiPM diffusion-based guard ring single photon avalanche diode (SPAD) temperature 293 K to 298 K CMOS imager photosensitive area anode-cathode spacing Junctions Timing SPAD array 3D single photon counting module Temperature measurement Photonics TOF 3D vertical integration CMOS integrated circuits positron emission tomography time-correlated single photon counting (TCSPC) crosstalk photon detection efficiency readout electronics dark count rate single photon avalanche diodes single photon counting module photon timing SPAD structures FWHM Afterpulsing avalanche diodes Teledyne DALSA high-voltage CMOS technology |
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ddc 620 misc virtual guard ring misc size 0.8 mum misc radiation detectors misc photon counting misc ancillary electronics misc Measurement by laser beam misc timing resolution misc PET misc Arrays misc silicon radiation detectors misc n-well cathode misc SiPM misc diffusion-based guard ring misc single photon avalanche diode (SPAD) misc temperature 293 K to 298 K misc CMOS imager misc photosensitive area misc anode-cathode spacing misc Junctions misc Timing misc SPAD array misc 3D single photon counting module misc Temperature measurement misc Photonics misc TOF misc 3D vertical integration misc CMOS integrated circuits misc positron emission tomography misc time-correlated single photon counting (TCSPC) misc crosstalk misc photon detection efficiency misc readout electronics misc dark count rate misc single photon avalanche diodes misc single photon counting module misc photon timing misc SPAD structures misc FWHM misc Afterpulsing misc avalanche diodes misc Teledyne DALSA high-voltage CMOS technology |
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ddc 620 misc virtual guard ring misc size 0.8 mum misc radiation detectors misc photon counting misc ancillary electronics misc Measurement by laser beam misc timing resolution misc PET misc Arrays misc silicon radiation detectors misc n-well cathode misc SiPM misc diffusion-based guard ring misc single photon avalanche diode (SPAD) misc temperature 293 K to 298 K misc CMOS imager misc photosensitive area misc anode-cathode spacing misc Junctions misc Timing misc SPAD array misc 3D single photon counting module misc Temperature measurement misc Photonics misc TOF misc 3D vertical integration misc CMOS integrated circuits misc positron emission tomography misc time-correlated single photon counting (TCSPC) misc crosstalk misc photon detection efficiency misc readout electronics misc dark count rate misc single photon avalanche diodes misc single photon counting module misc photon timing misc SPAD structures misc FWHM misc Afterpulsing misc avalanche diodes misc Teledyne DALSA high-voltage CMOS technology |
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Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology |
| abstract |
Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. |
| abstractGer |
Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. |
| abstract_unstemmed |
Single Photon Avalanche Diodes (SPAD) are known for their excellent timing performance which enables Time of Flight capabilities in positron emission tomography (PET). However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm. |
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Implementation Study of Single Photon Avalanche Diodes (SPAD) in 0.8~\mu\hbox HV CMOS Technology |
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Rheaume, Vincent-Philippe Parent, Samuel Maurais, Luc Therrien, Audrey Corbeil Charette, Paul G Charlebois, Serge A Fontaine, Rejean Pratte, Jean-Francois |
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However, current array architectures juxtapose the SPAD with its ancillary electronics at the expense of a poor fill factor of the SPAD array. The 3D vertical integration of SPADs and readout electronics represents a solution to the aforementioned problem. Compared to systems with external electronics readout, 3D vertical integration reduces the SPAD interconnect parasitic capacitance while greatly increasing the photosensitive area and improving overall performances. This paper presents the implementation of two SPAD structures designed for PET. The SPAD structures are designed using Teledyne DALSA high voltage (HV) CMOS technology targeted for a 3-dimensional single photon counting module (3DSPCM). SPAD with two types of guard ring (diffusion-based and virtual guard ring) are designed, fabricated and characterized. All structures are based on a p + anode in an n-well cathode and are implemented along with active quenching circuits for proper characterization. The results show that the contact distribution and the anode-cathode spacing impact the dark count rate (DCR). The design of SPADs with a diffusion guard ring have a DCR down to 3 s - 1 μm -2 at room temperature, afterpulsing probability of , timing resolution of 27 ps FWHM and PDE of 49% at 480 nm.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">virtual guard ring</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">size 0.8 mum</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">radiation detectors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photon counting</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">ancillary electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Measurement by laser beam</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">timing resolution</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PET</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Arrays</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">silicon radiation detectors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">n-well cathode</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiPM</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">diffusion-based guard ring</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single photon avalanche diode (SPAD)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">temperature 293 K to 298 K</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS imager</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photosensitive area</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">anode-cathode spacing</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Junctions</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Timing</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SPAD array</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">3D single photon counting module</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Temperature measurement</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photonics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TOF</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">3D vertical integration</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CMOS integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">positron emission tomography</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">time-correlated single photon counting (TCSPC)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">crosstalk</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photon detection efficiency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">readout electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">dark count rate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single photon avalanche diodes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single photon counting module</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">photon timing</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SPAD structures</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">FWHM</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Afterpulsing</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">avalanche diodes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Teledyne DALSA high-voltage CMOS technology</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rheaume, Vincent-Philippe</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Parent, Samuel</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maurais, Luc</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Therrien, Audrey Corbeil</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Charette, Paul G</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" 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