Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects
As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Marcelot, O [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on nuclear science - New York, NY : IEEE, 1963, 62(2015), 6, Seite 2965-2970 |
|---|---|
| Übergeordnetes Werk: |
volume:62 ; year:2015 ; number:6 ; pages:2965-2970 |
| Links: |
|---|
| DOI / URN: |
10.1109/TNS.2015.2497405 |
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OLC1966224869 |
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| 520 | |a As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations. | ||
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10.1109/TNS.2015.2497405 doi PQ20160617 (DE-627)OLC1966224869 (DE-599)GBVOLC1966224869 (PRQ)i578-480f643e56738436707fa6d80df60a59c4f024bbd8648b91039f6f6c2a68e0260 (KEY)0054996720150000062000602965radiationeffectsinccdoncmosdevicesfirstanalysisoft DE-627 ger DE-627 rakwb eng 620 DNB Marcelot, O verfasserin aut Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations. Charge coupled devices transfer inefficiency trapped charge CMOS image sensors Radiation effects Charge transfer Charge deep submicrometer process CMOS image sensors (CIS) Goiffon, V oth Raine, M oth Duhamel, O oth Gaillardin, M oth Molina, R oth Magnan, P oth Enthalten in IEEE transactions on nuclear science New York, NY : IEEE, 1963 62(2015), 6, Seite 2965-2970 (DE-627)129547352 (DE-600)218510-6 (DE-576)014998238 0018-9499 nnns volume:62 year:2015 number:6 pages:2965-2970 http://dx.doi.org/10.1109/TNS.2015.2497405 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7348799 http://search.proquest.com/docview/1750085548 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY SSG-OLC-PHA GBV_ILN_70 AR 62 2015 6 2965-2970 |
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10.1109/TNS.2015.2497405 |
| dewey-full |
620 |
| title_sort |
radiation effects in ccd on cmos devices: first analysis of tid and ddd effects |
| title_auth |
Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects |
| abstract |
As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations. |
| abstractGer |
As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations. |
| abstract_unstemmed |
As CMOS image sensors become more and more attractive and with high performances, it becomes possible to use CCD on CMOS devices with reasonable lengths. However, no study has been done on the radiation hardness of such CCD on CMOS devices. Therefore, we propose in this paper a first study of Charge Transfer Inefficiency (CTI) and dark current degradation under TID and DDD irradiations. To do so, test chips have been processed in conventional deep submicron CMOS imaging technologies, and characterized before and after irradiations. |
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6 |
| title_short |
Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects |
| url |
http://dx.doi.org/10.1109/TNS.2015.2497405 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7348799 http://search.proquest.com/docview/1750085548 |
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false |
| author2 |
Goiffon, V Raine, M Duhamel, O Gaillardin, M Molina, R Magnan, P |
| author2Str |
Goiffon, V Raine, M Duhamel, O Gaillardin, M Molina, R Magnan, P |
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| doi_str |
10.1109/TNS.2015.2497405 |
| up_date |
2024-07-03T20:50:07.845Z |
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7.398567 |