An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions

We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neuma...
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Autor*in:	Gurugubelli, Vijaya Kumar [verfasserIn] Thomas, Rekha Chithra Karmalkar, Shreepad

Format:	Artikel
Sprache:	Englisch

Erschienen:	2015

Schlagwörter:	forward bias ac equivalent circuit Neumann condition current spreading 3-D flow Dirichlet-Neumann mixed boundary condition minority carriers majority carrier current spreading Boundary conditions diodes semiconductor junction minority carrier flow Geometry numerical simulations 2-D flow equivalent circuits forward-biased shallow p-n junctions small-signal spread inverse transit time p-n junctions junction width small-signal equivalent circuit analytical model Equations 2D current spreading numerical analysis Mathematical model admittance 1D small-signal flow p-n junction conductance 3D current spreading inverse lifetime current boundary conditions continuity equation diffusion length Analytical models capacitance rectangular junction minority carrier current spreading Semiconductor lasers Finite element method Measurement Numerical analysis Signal processing Equivalent circuits Frequency modulation Voltage Usage Innovations

Übergeordnetes Werk:	Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 62(2015), 2, Seite 471-477
Übergeordnetes Werk:	volume:62 ; year:2015 ; number:2 ; pages:471-477

Links:	Volltext Link aufrufen

DOI / URN:	10.1109/TED.2014.2379638

Katalog-ID:	OLC1967766169

Internformat


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245	1	3	\|a An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions
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520			\|a We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners.
650		4	\|a forward bias
650		4	\|a ac equivalent circuit
650		4	\|a Neumann condition
650		4	\|a current spreading
650		4	\|a 3-D flow
650		4	\|a Dirichlet-Neumann mixed boundary condition
650		4	\|a minority carriers
650		4	\|a majority carrier current spreading
650		4	\|a Boundary conditions
650		4	\|a diodes
650		4	\|a semiconductor junction
650		4	\|a minority carrier flow
650		4	\|a Geometry
650		4	\|a numerical simulations
650		4	\|a 2-D flow
650		4	\|a equivalent circuits
650		4	\|a forward-biased shallow p-n junctions
650		4	\|a small-signal spread
650		4	\|a inverse transit time
650		4	\|a p-n junctions
650		4	\|a junction width
650		4	\|a small-signal equivalent circuit
650		4	\|a analytical model
650		4	\|a Equations
650		4	\|a 2D current spreading
650		4	\|a numerical analysis
650		4	\|a Mathematical model
650		4	\|a admittance
650		4	\|a 1D small-signal flow
650		4	\|a p-n junction
650		4	\|a conductance
650		4	\|a 3D current spreading
650		4	\|a inverse lifetime
650		4	\|a current boundary conditions
650		4	\|a continuity equation
650		4	\|a diffusion length
650		4	\|a Analytical models
650		4	\|a capacitance
650		4	\|a rectangular junction
650		4	\|a minority carrier current spreading
650		4	\|a Semiconductor lasers
650		4	\|a Finite element method
650		4	\|a Measurement
650		4	\|a Numerical analysis
650		4	\|a Signal processing
650		4	\|a Equivalent circuits
650		4	\|a Frequency modulation
650		4	\|a Voltage
650		4	\|a Usage
650		4	\|a Innovations
700	1		\|a Thomas, Rekha Chithra \|4 oth
700	1		\|a Karmalkar, Shreepad \|4 oth
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allfields	10.1109/TED.2014.2379638 doi PQ20160617 (DE-627)OLC1967766169 (DE-599)GBVOLC1967766169 (PRQ)c1770-2efb0b4acc07e2a31eac4debb94f1dca6b963841dc5570a873262451797480ba0 (KEY)0079428720150000062000200471analyticalmodelofthedcandfrequencydependent2dand3d DE-627 ger DE-627 rakwb eng 620 DNB Gurugubelli, Vijaya Kumar verfasserin aut An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners. forward bias ac equivalent circuit Neumann condition current spreading 3-D flow Dirichlet-Neumann mixed boundary condition minority carriers majority carrier current spreading Boundary conditions diodes semiconductor junction minority carrier flow Geometry numerical simulations 2-D flow equivalent circuits forward-biased shallow p-n junctions small-signal spread inverse transit time p-n junctions junction width small-signal equivalent circuit analytical model Equations 2D current spreading numerical analysis Mathematical model admittance 1D small-signal flow p-n junction conductance 3D current spreading inverse lifetime current boundary conditions continuity equation diffusion length Analytical models capacitance rectangular junction minority carrier current spreading Semiconductor lasers Finite element method Measurement Numerical analysis Signal processing Equivalent circuits Frequency modulation Voltage Usage Innovations Thomas, Rekha Chithra oth Karmalkar, Shreepad oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 2, Seite 471-477 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:2 pages:471-477 http://dx.doi.org/10.1109/TED.2014.2379638 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6996038 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 2 471-477
spelling	10.1109/TED.2014.2379638 doi PQ20160617 (DE-627)OLC1967766169 (DE-599)GBVOLC1967766169 (PRQ)c1770-2efb0b4acc07e2a31eac4debb94f1dca6b963841dc5570a873262451797480ba0 (KEY)0079428720150000062000200471analyticalmodelofthedcandfrequencydependent2dand3d DE-627 ger DE-627 rakwb eng 620 DNB Gurugubelli, Vijaya Kumar verfasserin aut An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners. forward bias ac equivalent circuit Neumann condition current spreading 3-D flow Dirichlet-Neumann mixed boundary condition minority carriers majority carrier current spreading Boundary conditions diodes semiconductor junction minority carrier flow Geometry numerical simulations 2-D flow equivalent circuits forward-biased shallow p-n junctions small-signal spread inverse transit time p-n junctions junction width small-signal equivalent circuit analytical model Equations 2D current spreading numerical analysis Mathematical model admittance 1D small-signal flow p-n junction conductance 3D current spreading inverse lifetime current boundary conditions continuity equation diffusion length Analytical models capacitance rectangular junction minority carrier current spreading Semiconductor lasers Finite element method Measurement Numerical analysis Signal processing Equivalent circuits Frequency modulation Voltage Usage Innovations Thomas, Rekha Chithra oth Karmalkar, Shreepad oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 2, Seite 471-477 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:2 pages:471-477 http://dx.doi.org/10.1109/TED.2014.2379638 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6996038 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 2 471-477
allfields_unstemmed	10.1109/TED.2014.2379638 doi PQ20160617 (DE-627)OLC1967766169 (DE-599)GBVOLC1967766169 (PRQ)c1770-2efb0b4acc07e2a31eac4debb94f1dca6b963841dc5570a873262451797480ba0 (KEY)0079428720150000062000200471analyticalmodelofthedcandfrequencydependent2dand3d DE-627 ger DE-627 rakwb eng 620 DNB Gurugubelli, Vijaya Kumar verfasserin aut An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners. forward bias ac equivalent circuit Neumann condition current spreading 3-D flow Dirichlet-Neumann mixed boundary condition minority carriers majority carrier current spreading Boundary conditions diodes semiconductor junction minority carrier flow Geometry numerical simulations 2-D flow equivalent circuits forward-biased shallow p-n junctions small-signal spread inverse transit time p-n junctions junction width small-signal equivalent circuit analytical model Equations 2D current spreading numerical analysis Mathematical model admittance 1D small-signal flow p-n junction conductance 3D current spreading inverse lifetime current boundary conditions continuity equation diffusion length Analytical models capacitance rectangular junction minority carrier current spreading Semiconductor lasers Finite element method Measurement Numerical analysis Signal processing Equivalent circuits Frequency modulation Voltage Usage Innovations Thomas, Rekha Chithra oth Karmalkar, Shreepad oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 2, Seite 471-477 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:2 pages:471-477 http://dx.doi.org/10.1109/TED.2014.2379638 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6996038 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 2 471-477
allfieldsGer	10.1109/TED.2014.2379638 doi PQ20160617 (DE-627)OLC1967766169 (DE-599)GBVOLC1967766169 (PRQ)c1770-2efb0b4acc07e2a31eac4debb94f1dca6b963841dc5570a873262451797480ba0 (KEY)0079428720150000062000200471analyticalmodelofthedcandfrequencydependent2dand3d DE-627 ger DE-627 rakwb eng 620 DNB Gurugubelli, Vijaya Kumar verfasserin aut An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners. forward bias ac equivalent circuit Neumann condition current spreading 3-D flow Dirichlet-Neumann mixed boundary condition minority carriers majority carrier current spreading Boundary conditions diodes semiconductor junction minority carrier flow Geometry numerical simulations 2-D flow equivalent circuits forward-biased shallow p-n junctions small-signal spread inverse transit time p-n junctions junction width small-signal equivalent circuit analytical model Equations 2D current spreading numerical analysis Mathematical model admittance 1D small-signal flow p-n junction conductance 3D current spreading inverse lifetime current boundary conditions continuity equation diffusion length Analytical models capacitance rectangular junction minority carrier current spreading Semiconductor lasers Finite element method Measurement Numerical analysis Signal processing Equivalent circuits Frequency modulation Voltage Usage Innovations Thomas, Rekha Chithra oth Karmalkar, Shreepad oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 2, Seite 471-477 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:2 pages:471-477 http://dx.doi.org/10.1109/TED.2014.2379638 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6996038 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 2 471-477
allfieldsSound	10.1109/TED.2014.2379638 doi PQ20160617 (DE-627)OLC1967766169 (DE-599)GBVOLC1967766169 (PRQ)c1770-2efb0b4acc07e2a31eac4debb94f1dca6b963841dc5570a873262451797480ba0 (KEY)0079428720150000062000200471analyticalmodelofthedcandfrequencydependent2dand3d DE-627 ger DE-627 rakwb eng 620 DNB Gurugubelli, Vijaya Kumar verfasserin aut An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners. forward bias ac equivalent circuit Neumann condition current spreading 3-D flow Dirichlet-Neumann mixed boundary condition minority carriers majority carrier current spreading Boundary conditions diodes semiconductor junction minority carrier flow Geometry numerical simulations 2-D flow equivalent circuits forward-biased shallow p-n junctions small-signal spread inverse transit time p-n junctions junction width small-signal equivalent circuit analytical model Equations 2D current spreading numerical analysis Mathematical model admittance 1D small-signal flow p-n junction conductance 3D current spreading inverse lifetime current boundary conditions continuity equation diffusion length Analytical models capacitance rectangular junction minority carrier current spreading Semiconductor lasers Finite element method Measurement Numerical analysis Signal processing Equivalent circuits Frequency modulation Voltage Usage Innovations Thomas, Rekha Chithra oth Karmalkar, Shreepad oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 2, Seite 471-477 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:2 pages:471-477 http://dx.doi.org/10.1109/TED.2014.2379638 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6996038 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 2 471-477
language	English
source	Enthalten in IEEE transactions on electron devices 62(2015), 2, Seite 471-477 volume:62 year:2015 number:2 pages:471-477
sourceStr	Enthalten in IEEE transactions on electron devices 62(2015), 2, Seite 471-477 volume:62 year:2015 number:2 pages:471-477
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topic_facet	forward bias ac equivalent circuit Neumann condition current spreading 3-D flow Dirichlet-Neumann mixed boundary condition minority carriers majority carrier current spreading Boundary conditions diodes semiconductor junction minority carrier flow Geometry numerical simulations 2-D flow equivalent circuits forward-biased shallow p-n junctions small-signal spread inverse transit time p-n junctions junction width small-signal equivalent circuit analytical model Equations 2D current spreading numerical analysis Mathematical model admittance 1D small-signal flow p-n junction conductance 3D current spreading inverse lifetime current boundary conditions continuity equation diffusion length Analytical models capacitance rectangular junction minority carrier current spreading Semiconductor lasers Finite element method Measurement Numerical analysis Signal processing Equivalent circuits Frequency modulation Voltage Usage Innovations
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Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. 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author	Gurugubelli, Vijaya Kumar
spellingShingle	Gurugubelli, Vijaya Kumar ddc 620 misc forward bias misc ac equivalent circuit misc Neumann condition misc current spreading misc 3-D flow misc Dirichlet-Neumann mixed boundary condition misc minority carriers misc majority carrier current spreading misc Boundary conditions misc diodes misc semiconductor junction misc minority carrier flow misc Geometry misc numerical simulations misc 2-D flow misc equivalent circuits misc forward-biased shallow p-n junctions misc small-signal spread misc inverse transit time misc p-n junctions misc junction width misc small-signal equivalent circuit misc analytical model misc Equations misc 2D current spreading misc numerical analysis misc Mathematical model misc admittance misc 1D small-signal flow misc p-n junction misc conductance misc 3D current spreading misc inverse lifetime misc current boundary conditions misc continuity equation misc diffusion length misc Analytical models misc capacitance misc rectangular junction misc minority carrier current spreading misc Semiconductor lasers misc Finite element method misc Measurement misc Numerical analysis misc Signal processing misc Equivalent circuits misc Frequency modulation misc Voltage misc Usage misc Innovations An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions
authorStr	Gurugubelli, Vijaya Kumar
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topic_title	620 DNB An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions forward bias ac equivalent circuit Neumann condition current spreading 3-D flow Dirichlet-Neumann mixed boundary condition minority carriers majority carrier current spreading Boundary conditions diodes semiconductor junction minority carrier flow Geometry numerical simulations 2-D flow equivalent circuits forward-biased shallow p-n junctions small-signal spread inverse transit time p-n junctions junction width small-signal equivalent circuit analytical model Equations 2D current spreading numerical analysis Mathematical model admittance 1D small-signal flow p-n junction conductance 3D current spreading inverse lifetime current boundary conditions continuity equation diffusion length Analytical models capacitance rectangular junction minority carrier current spreading Semiconductor lasers Finite element method Measurement Numerical analysis Signal processing Equivalent circuits Frequency modulation Voltage Usage Innovations
topic	ddc 620 misc forward bias misc ac equivalent circuit misc Neumann condition misc current spreading misc 3-D flow misc Dirichlet-Neumann mixed boundary condition misc minority carriers misc majority carrier current spreading misc Boundary conditions misc diodes misc semiconductor junction misc minority carrier flow misc Geometry misc numerical simulations misc 2-D flow misc equivalent circuits misc forward-biased shallow p-n junctions misc small-signal spread misc inverse transit time misc p-n junctions misc junction width misc small-signal equivalent circuit misc analytical model misc Equations misc 2D current spreading misc numerical analysis misc Mathematical model misc admittance misc 1D small-signal flow misc p-n junction misc conductance misc 3D current spreading misc inverse lifetime misc current boundary conditions misc continuity equation misc diffusion length misc Analytical models misc capacitance misc rectangular junction misc minority carrier current spreading misc Semiconductor lasers misc Finite element method misc Measurement misc Numerical analysis misc Signal processing misc Equivalent circuits misc Frequency modulation misc Voltage misc Usage misc Innovations
topic_unstemmed	ddc 620 misc forward bias misc ac equivalent circuit misc Neumann condition misc current spreading misc 3-D flow misc Dirichlet-Neumann mixed boundary condition misc minority carriers misc majority carrier current spreading misc Boundary conditions misc diodes misc semiconductor junction misc minority carrier flow misc Geometry misc numerical simulations misc 2-D flow misc equivalent circuits misc forward-biased shallow p-n junctions misc small-signal spread misc inverse transit time misc p-n junctions misc junction width misc small-signal equivalent circuit misc analytical model misc Equations misc 2D current spreading misc numerical analysis misc Mathematical model misc admittance misc 1D small-signal flow misc p-n junction misc conductance misc 3D current spreading misc inverse lifetime misc current boundary conditions misc continuity equation misc diffusion length misc Analytical models misc capacitance misc rectangular junction misc minority carrier current spreading misc Semiconductor lasers misc Finite element method misc Measurement misc Numerical analysis misc Signal processing misc Equivalent circuits misc Frequency modulation misc Voltage misc Usage misc Innovations
topic_browse	ddc 620 misc forward bias misc ac equivalent circuit misc Neumann condition misc current spreading misc 3-D flow misc Dirichlet-Neumann mixed boundary condition misc minority carriers misc majority carrier current spreading misc Boundary conditions misc diodes misc semiconductor junction misc minority carrier flow misc Geometry misc numerical simulations misc 2-D flow misc equivalent circuits misc forward-biased shallow p-n junctions misc small-signal spread misc inverse transit time misc p-n junctions misc junction width misc small-signal equivalent circuit misc analytical model misc Equations misc 2D current spreading misc numerical analysis misc Mathematical model misc admittance misc 1D small-signal flow misc p-n junction misc conductance misc 3D current spreading misc inverse lifetime misc current boundary conditions misc continuity equation misc diffusion length misc Analytical models misc capacitance misc rectangular junction misc minority carrier current spreading misc Semiconductor lasers misc Finite element method misc Measurement misc Numerical analysis misc Signal processing misc Equivalent circuits misc Frequency modulation misc Voltage misc Usage misc Innovations
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title	An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions
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title_full	An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions
author_sort	Gurugubelli, Vijaya Kumar
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title_sort	analytical model of the dc and frequency-dependent 2-d and 3-d current spreading in forward-biased shallow p-n junctions
title_auth	An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions
abstract	We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners.
abstractGer	We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners.
abstract_unstemmed	We present an analytical model of the 2-D/3-D spreading of dc and small-signal minority carrier flow in forward-biased shallow finite-sized p-n junctions. The model achieves an analytical solution of the 2-D/3-D continuity equation by replacing a Dirichlet-Neumann mixed boundary condition by a Neumann condition. It expresses the current spreading in terms of the junction width, lateral (vertical) extent beyond the junction, diffusion length, lifetime, transit time, and frequency. It predicts that the small-signal spread of the minority carrier flow gets progressively restricted for frequencies greater than inverse lifetime in long diodes and inverse transit time in short diodes; at high frequencies, the minority carrier flow picture consists of a 1-D small-signal flow superposed over a 2-D/3-D dc flow. Under dc conditions, the flow is almost 1-D in short diodes, spreads with an increase in vertical extent, and saturates in long diodes. We give the critical lateral extent beyond which the spread saturates, in terms of the vertical extent. Our model includes a small-signal equivalent circuit, which considers both minority and majority carrier current spreading; the latter is frequency independent and becomes important at higher frequencies. We validate the model against numerical simulations, and show its application to a rectangular junction with rounded corners.
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container_issue	2
title_short	An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions
url	http://dx.doi.org/10.1109/TED.2014.2379638 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6996038
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An Analytical Model of the DC and Frequency-Dependent 2-D and 3-D Current Spreading in Forward-Biased Shallow p-n Junctions

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