ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress
The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math>&l...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Tada, Munehiro [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 62(2015), 9, Seite 2992-2997 |
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| Übergeordnetes Werk: |
volume:62 ; year:2015 ; number:9 ; pages:2992-2997 |
| Links: |
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| DOI / URN: |
10.1109/TED.2015.2451139 |
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| Katalog-ID: |
OLC1967767645 |
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| 520 | |a The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. | ||
| 650 | 4 | |a reconfigurable logic | |
| 650 | 4 | |a field-programmable gate array | |
| 650 | 4 | |a polymer | |
| 650 | 4 | |a solid electrolyte | |
| 650 | 4 | |a Reliability | |
| 650 | 4 | |a Bridge circuits | |
| 650 | 4 | |a Stress | |
| 650 | 4 | |a nonvolatile memory | |
| 650 | 4 | |a Optical switches | |
| 650 | 4 | |a Atom switch | |
| 650 | 4 | |a Resistance | |
| 650 | 4 | |a programmable logic device | |
| 650 | 4 | |a Electrodes | |
| 700 | 1 | |a Okamoto, Koichiro |4 oth | |
| 700 | 1 | |a Sakamoto, Toshitsugu |4 oth | |
| 700 | 1 | |a Hada, Hiromitsu |4 oth | |
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10.1109/TED.2015.2451139 doi PQ20160617 (DE-627)OLC1967767645 (DE-599)GBVOLC1967767645 (PRQ)c1545-392444fa36e91a30ec401372247dd50a8e5073f7994edbbdeda672f356312920 (KEY)0079428720150000062000902992onstatereliabilityofcuatomswitchundercurrenttemper DE-627 ger DE-627 rakwb eng 620 DNB Tada, Munehiro verfasserin aut ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. reconfigurable logic field-programmable gate array polymer solid electrolyte Reliability Bridge circuits Stress nonvolatile memory Optical switches Atom switch Resistance programmable logic device Electrodes Okamoto, Koichiro oth Sakamoto, Toshitsugu oth Hada, Hiromitsu oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 9, Seite 2992-2997 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:9 pages:2992-2997 http://dx.doi.org/10.1109/TED.2015.2451139 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7185397 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 9 2992-2997 |
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10.1109/TED.2015.2451139 doi PQ20160617 (DE-627)OLC1967767645 (DE-599)GBVOLC1967767645 (PRQ)c1545-392444fa36e91a30ec401372247dd50a8e5073f7994edbbdeda672f356312920 (KEY)0079428720150000062000902992onstatereliabilityofcuatomswitchundercurrenttemper DE-627 ger DE-627 rakwb eng 620 DNB Tada, Munehiro verfasserin aut ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. reconfigurable logic field-programmable gate array polymer solid electrolyte Reliability Bridge circuits Stress nonvolatile memory Optical switches Atom switch Resistance programmable logic device Electrodes Okamoto, Koichiro oth Sakamoto, Toshitsugu oth Hada, Hiromitsu oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 9, Seite 2992-2997 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:9 pages:2992-2997 http://dx.doi.org/10.1109/TED.2015.2451139 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7185397 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 9 2992-2997 |
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10.1109/TED.2015.2451139 doi PQ20160617 (DE-627)OLC1967767645 (DE-599)GBVOLC1967767645 (PRQ)c1545-392444fa36e91a30ec401372247dd50a8e5073f7994edbbdeda672f356312920 (KEY)0079428720150000062000902992onstatereliabilityofcuatomswitchundercurrenttemper DE-627 ger DE-627 rakwb eng 620 DNB Tada, Munehiro verfasserin aut ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. reconfigurable logic field-programmable gate array polymer solid electrolyte Reliability Bridge circuits Stress nonvolatile memory Optical switches Atom switch Resistance programmable logic device Electrodes Okamoto, Koichiro oth Sakamoto, Toshitsugu oth Hada, Hiromitsu oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 9, Seite 2992-2997 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:9 pages:2992-2997 http://dx.doi.org/10.1109/TED.2015.2451139 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7185397 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 9 2992-2997 |
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10.1109/TED.2015.2451139 doi PQ20160617 (DE-627)OLC1967767645 (DE-599)GBVOLC1967767645 (PRQ)c1545-392444fa36e91a30ec401372247dd50a8e5073f7994edbbdeda672f356312920 (KEY)0079428720150000062000902992onstatereliabilityofcuatomswitchundercurrenttemper DE-627 ger DE-627 rakwb eng 620 DNB Tada, Munehiro verfasserin aut ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. reconfigurable logic field-programmable gate array polymer solid electrolyte Reliability Bridge circuits Stress nonvolatile memory Optical switches Atom switch Resistance programmable logic device Electrodes Okamoto, Koichiro oth Sakamoto, Toshitsugu oth Hada, Hiromitsu oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 9, Seite 2992-2997 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:9 pages:2992-2997 http://dx.doi.org/10.1109/TED.2015.2451139 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7185397 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 9 2992-2997 |
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10.1109/TED.2015.2451139 doi PQ20160617 (DE-627)OLC1967767645 (DE-599)GBVOLC1967767645 (PRQ)c1545-392444fa36e91a30ec401372247dd50a8e5073f7994edbbdeda672f356312920 (KEY)0079428720150000062000902992onstatereliabilityofcuatomswitchundercurrenttemper DE-627 ger DE-627 rakwb eng 620 DNB Tada, Munehiro verfasserin aut ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. reconfigurable logic field-programmable gate array polymer solid electrolyte Reliability Bridge circuits Stress nonvolatile memory Optical switches Atom switch Resistance programmable logic device Electrodes Okamoto, Koichiro oth Sakamoto, Toshitsugu oth Hada, Hiromitsu oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 62(2015), 9, Seite 2992-2997 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:62 year:2015 number:9 pages:2992-2997 http://dx.doi.org/10.1109/TED.2015.2451139 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7185397 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_170 GBV_ILN_2004 GBV_ILN_4313 GBV_ILN_4314 AR 62 2015 9 2992-2997 |
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Enthalten in IEEE transactions on electron devices 62(2015), 9, Seite 2992-2997 volume:62 year:2015 number:9 pages:2992-2997 |
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Tada, Munehiro @@aut@@ Okamoto, Koichiro @@oth@@ Sakamoto, Toshitsugu @@oth@@ Hada, Hiromitsu @@oth@@ |
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|
| author |
Tada, Munehiro |
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Tada, Munehiro ddc 620 misc reconfigurable logic misc field-programmable gate array misc polymer misc solid electrolyte misc Reliability misc Bridge circuits misc Stress misc nonvolatile memory misc Optical switches misc Atom switch misc Resistance misc programmable logic device misc Electrodes ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress |
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620 DNB ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress reconfigurable logic field-programmable gate array polymer solid electrolyte Reliability Bridge circuits Stress nonvolatile memory Optical switches Atom switch Resistance programmable logic device Electrodes |
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ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress |
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ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress |
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on-state reliability of cu atom switch under current-temperature stress |
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ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress |
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The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. |
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The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. |
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The dc current-stress tolerance of the ON-state Cu atom switch is evaluated at elevated temperature. It is revealed that the reset-direction current stress causes time-dependent failures, which originate from the <inline-formula> <tex-math notation="LaTeX">E </tex-math></inline-formula>-field-driven diffusion of Cu in the conducting bridge. A new empirical lifetime estimation model, including the Joule heating effect, gives an allowable maximum current per atom switch of <inline-formula> <tex-math notation="LaTeX">I_{{\textrm {max}}}= 115~\mu \text{A} </tex-math></inline-formula>, which is large enough to satisfy the requirements for signal routing under currents that are average (18 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) and peak (63 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula>) in the reconfigurable switch block operated at 500 MHz at 125 °C. |
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ON-state Reliability of Cu Atom Switch Under Current-Temperature Stress |
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