Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation

We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxi...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Xiuling Li [verfasserIn]

Billah, Mohammad Masum

Mativenga, Mallory

Di Geng

Yong-Hwan Kim

Tae-Woong Kim

Young-Gug Seol

Jin Jang

Format:

Artikel

Sprache:

Englisch

Erschienen:

2015

Schlagwörter:

Performance evaluation

flexible electronics

a-IGZO semiconductor

TCAD simulations

InGaZnO

gallium compounds

Robustness

amorphous-indium-gallium-zinc oxide

molybdenum gate

carrier density

semiconductor device models

thin film transistors

single gate-driven TFT

bulk-accumulation

solution-processed polyimide

tensile strain

bulk accumulation

molybdenum

BA a-IGZO TFT

Substrates

polymers

a-IGZO

Logic gates

carrier concentration

mechanical bending stress

thin-film transistors (TFTs)

mechanical stability

Glass

flexible

indium compounds

bending

silicon dioxide gate insulators

amorphous semiconductors

zinc compounds

dual-gate

mechanical bending

SiO 2

flexible oxide thin-film transistors

channel accumulation layer

source-drain electrodes

Übergeordnetes Werk:

Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 36(2015), 8, Seite 811-813

Übergeordnetes Werk:

volume:36 ; year:2015 ; number:8 ; pages:811-813

Links:

Volltext
Link aufrufen

DOI / URN:

10.1109/LED.2015.2451005

Katalog-ID:

OLC1968402780

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