Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation

We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxi...
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Autor*in:	Xiuling Li [verfasserIn] Billah, Mohammad Masum Mativenga, Mallory Di Geng Yong-Hwan Kim Tae-Woong Kim Young-Gug Seol Jin Jang

Format:	Artikel
Sprache:	Englisch

Erschienen:	2015

Schlagwörter:	Performance evaluation flexible electronics a-IGZO semiconductor TCAD simulations InGaZnO gallium compounds Robustness amorphous-indium-gallium-zinc oxide molybdenum gate carrier density semiconductor device models thin film transistors single gate-driven TFT bulk-accumulation solution-processed polyimide tensile strain bulk accumulation molybdenum BA a-IGZO TFT Substrates polymers a-IGZO Logic gates carrier concentration mechanical bending stress thin-film transistors (TFTs) mechanical stability Glass flexible indium compounds bending silicon dioxide gate insulators amorphous semiconductors zinc compounds dual-gate mechanical bending SiO 2 flexible oxide thin-film transistors channel accumulation layer source-drain electrodes

Übergeordnetes Werk:	Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 36(2015), 8, Seite 811-813
Übergeordnetes Werk:	volume:36 ; year:2015 ; number:8 ; pages:811-813

Links:	Volltext Link aufrufen

DOI / URN:	10.1109/LED.2015.2451005

Katalog-ID:	OLC1968402780

Internformat


LEADER	01000caa a2200265 4500
001	OLC1968402780
003	DE-627
005	20230714172428.0
007	tu
008	160206s2015 xx \|\|\|\|\| 00\| \|\|eng c
024	7		\|a 10.1109/LED.2015.2451005 \|2 doi
028	5	2	\|a PQ20160617
035			\|a (DE-627)OLC1968402780
035			\|a (DE-599)GBVOLC1968402780
035			\|a (PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790
035			\|a (KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 620 \|q DNB
100	0		\|a Xiuling Li \|e verfasserin \|4 aut
245	1	0	\|a Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation
264		1	\|c 2015
336			\|a Text \|b txt \|2 rdacontent
337			\|a ohne Hilfsmittel zu benutzen \|b n \|2 rdamedia
338			\|a Band \|b nc \|2 rdacarrier
520			\|a We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs.
650		4	\|a Performance evaluation
650		4	\|a flexible electronics
650		4	\|a a-IGZO semiconductor
650		4	\|a TCAD simulations
650		4	\|a InGaZnO
650		4	\|a gallium compounds
650		4	\|a Robustness
650		4	\|a amorphous-indium-gallium-zinc oxide
650		4	\|a molybdenum gate
650		4	\|a carrier density
650		4	\|a semiconductor device models
650		4	\|a thin film transistors
650		4	\|a single gate-driven TFT
650		4	\|a bulk-accumulation
650		4	\|a solution-processed polyimide
650		4	\|a tensile strain
650		4	\|a bulk accumulation
650		4	\|a molybdenum
650		4	\|a BA a-IGZO TFT
650		4	\|a Substrates
650		4	\|a polymers
650		4	\|a a-IGZO
650		4	\|a Logic gates
650		4	\|a carrier concentration
650		4	\|a mechanical bending stress
650		4	\|a thin-film transistors (TFTs)
650		4	\|a mechanical stability
650		4	\|a Glass
650		4	\|a flexible
650		4	\|a indium compounds
650		4	\|a bending
650		4	\|a silicon dioxide gate insulators
650		4	\|a amorphous semiconductors
650		4	\|a zinc compounds
650		4	\|a dual-gate
650		4	\|a mechanical bending
650		4	\|a SiO 2
650		4	\|a flexible oxide thin-film transistors
650		4	\|a channel accumulation layer
650		4	\|a source-drain electrodes
700	1		\|a Billah, Mohammad Masum \|4 oth
700	1		\|a Mativenga, Mallory \|4 oth
700	0		\|a Di Geng \|4 oth
700	0		\|a Yong-Hwan Kim \|4 oth
700	0		\|a Tae-Woong Kim \|4 oth
700	0		\|a Young-Gug Seol \|4 oth
700	0		\|a Jin Jang \|4 oth
773	0	8	\|i Enthalten in \|t IEEE electron device letters \|d New York, NY : IEEE, 1980 \|g 36(2015), 8, Seite 811-813 \|w (DE-627)129618993 \|w (DE-600)245158-X \|w (DE-576)015122115 \|x 0193-8576 \|7 nnns
773	1	8	\|g volume:36 \|g year:2015 \|g number:8 \|g pages:811-813
856	4	1	\|u http://dx.doi.org/10.1109/LED.2015.2451005 \|3 Volltext
856	4	2	\|u http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_OLC
912			\|a SSG-OLC-TEC
912			\|a GBV_ILN_70
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_4266
912			\|a GBV_ILN_4314
951			\|a AR
952			\|d 36 \|j 2015 \|e 8 \|h 811-813

Indexfelder

author_variant	x l xl
matchkey_str	article:01938576:2015----::ihyoutlxbexdtifltassos
hierarchy_sort_str	2015
publishDate	2015
allfields	10.1109/LED.2015.2451005 doi PQ20160617 (DE-627)OLC1968402780 (DE-599)GBVOLC1968402780 (PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790 (KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk DE-627 ger DE-627 rakwb eng 620 DNB Xiuling Li verfasserin aut Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs. Performance evaluation flexible electronics a-IGZO semiconductor TCAD simulations InGaZnO gallium compounds Robustness amorphous-indium-gallium-zinc oxide molybdenum gate carrier density semiconductor device models thin film transistors single gate-driven TFT bulk-accumulation solution-processed polyimide tensile strain bulk accumulation molybdenum BA a-IGZO TFT Substrates polymers a-IGZO Logic gates carrier concentration mechanical bending stress thin-film transistors (TFTs) mechanical stability Glass flexible indium compounds bending silicon dioxide gate insulators amorphous semiconductors zinc compounds dual-gate mechanical bending SiO 2 flexible oxide thin-film transistors channel accumulation layer source-drain electrodes Billah, Mohammad Masum oth Mativenga, Mallory oth Di Geng oth Yong-Hwan Kim oth Tae-Woong Kim oth Young-Gug Seol oth Jin Jang oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 8, Seite 811-813 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:8 pages:811-813 http://dx.doi.org/10.1109/LED.2015.2451005 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 8 811-813
spelling	10.1109/LED.2015.2451005 doi PQ20160617 (DE-627)OLC1968402780 (DE-599)GBVOLC1968402780 (PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790 (KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk DE-627 ger DE-627 rakwb eng 620 DNB Xiuling Li verfasserin aut Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs. Performance evaluation flexible electronics a-IGZO semiconductor TCAD simulations InGaZnO gallium compounds Robustness amorphous-indium-gallium-zinc oxide molybdenum gate carrier density semiconductor device models thin film transistors single gate-driven TFT bulk-accumulation solution-processed polyimide tensile strain bulk accumulation molybdenum BA a-IGZO TFT Substrates polymers a-IGZO Logic gates carrier concentration mechanical bending stress thin-film transistors (TFTs) mechanical stability Glass flexible indium compounds bending silicon dioxide gate insulators amorphous semiconductors zinc compounds dual-gate mechanical bending SiO 2 flexible oxide thin-film transistors channel accumulation layer source-drain electrodes Billah, Mohammad Masum oth Mativenga, Mallory oth Di Geng oth Yong-Hwan Kim oth Tae-Woong Kim oth Young-Gug Seol oth Jin Jang oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 8, Seite 811-813 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:8 pages:811-813 http://dx.doi.org/10.1109/LED.2015.2451005 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 8 811-813
allfields_unstemmed	10.1109/LED.2015.2451005 doi PQ20160617 (DE-627)OLC1968402780 (DE-599)GBVOLC1968402780 (PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790 (KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk DE-627 ger DE-627 rakwb eng 620 DNB Xiuling Li verfasserin aut Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs. Performance evaluation flexible electronics a-IGZO semiconductor TCAD simulations InGaZnO gallium compounds Robustness amorphous-indium-gallium-zinc oxide molybdenum gate carrier density semiconductor device models thin film transistors single gate-driven TFT bulk-accumulation solution-processed polyimide tensile strain bulk accumulation molybdenum BA a-IGZO TFT Substrates polymers a-IGZO Logic gates carrier concentration mechanical bending stress thin-film transistors (TFTs) mechanical stability Glass flexible indium compounds bending silicon dioxide gate insulators amorphous semiconductors zinc compounds dual-gate mechanical bending SiO 2 flexible oxide thin-film transistors channel accumulation layer source-drain electrodes Billah, Mohammad Masum oth Mativenga, Mallory oth Di Geng oth Yong-Hwan Kim oth Tae-Woong Kim oth Young-Gug Seol oth Jin Jang oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 8, Seite 811-813 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:8 pages:811-813 http://dx.doi.org/10.1109/LED.2015.2451005 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 8 811-813
allfieldsGer	10.1109/LED.2015.2451005 doi PQ20160617 (DE-627)OLC1968402780 (DE-599)GBVOLC1968402780 (PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790 (KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk DE-627 ger DE-627 rakwb eng 620 DNB Xiuling Li verfasserin aut Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs. Performance evaluation flexible electronics a-IGZO semiconductor TCAD simulations InGaZnO gallium compounds Robustness amorphous-indium-gallium-zinc oxide molybdenum gate carrier density semiconductor device models thin film transistors single gate-driven TFT bulk-accumulation solution-processed polyimide tensile strain bulk accumulation molybdenum BA a-IGZO TFT Substrates polymers a-IGZO Logic gates carrier concentration mechanical bending stress thin-film transistors (TFTs) mechanical stability Glass flexible indium compounds bending silicon dioxide gate insulators amorphous semiconductors zinc compounds dual-gate mechanical bending SiO 2 flexible oxide thin-film transistors channel accumulation layer source-drain electrodes Billah, Mohammad Masum oth Mativenga, Mallory oth Di Geng oth Yong-Hwan Kim oth Tae-Woong Kim oth Young-Gug Seol oth Jin Jang oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 8, Seite 811-813 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:8 pages:811-813 http://dx.doi.org/10.1109/LED.2015.2451005 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 8 811-813
allfieldsSound	10.1109/LED.2015.2451005 doi PQ20160617 (DE-627)OLC1968402780 (DE-599)GBVOLC1968402780 (PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790 (KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk DE-627 ger DE-627 rakwb eng 620 DNB Xiuling Li verfasserin aut Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs. Performance evaluation flexible electronics a-IGZO semiconductor TCAD simulations InGaZnO gallium compounds Robustness amorphous-indium-gallium-zinc oxide molybdenum gate carrier density semiconductor device models thin film transistors single gate-driven TFT bulk-accumulation solution-processed polyimide tensile strain bulk accumulation molybdenum BA a-IGZO TFT Substrates polymers a-IGZO Logic gates carrier concentration mechanical bending stress thin-film transistors (TFTs) mechanical stability Glass flexible indium compounds bending silicon dioxide gate insulators amorphous semiconductors zinc compounds dual-gate mechanical bending SiO 2 flexible oxide thin-film transistors channel accumulation layer source-drain electrodes Billah, Mohammad Masum oth Mativenga, Mallory oth Di Geng oth Yong-Hwan Kim oth Tae-Woong Kim oth Young-Gug Seol oth Jin Jang oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 8, Seite 811-813 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:8 pages:811-813 http://dx.doi.org/10.1109/LED.2015.2451005 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 8 811-813
language	English
source	Enthalten in IEEE electron device letters 36(2015), 8, Seite 811-813 volume:36 year:2015 number:8 pages:811-813
sourceStr	Enthalten in IEEE electron device letters 36(2015), 8, Seite 811-813 volume:36 year:2015 number:8 pages:811-813
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Performance evaluation flexible electronics a-IGZO semiconductor TCAD simulations InGaZnO gallium compounds Robustness amorphous-indium-gallium-zinc oxide molybdenum gate carrier density semiconductor device models thin film transistors single gate-driven TFT bulk-accumulation solution-processed polyimide tensile strain bulk accumulation molybdenum BA a-IGZO TFT Substrates polymers a-IGZO Logic gates carrier concentration mechanical bending stress thin-film transistors (TFTs) mechanical stability Glass flexible indium compounds bending silicon dioxide gate insulators amorphous semiconductors zinc compounds dual-gate mechanical bending SiO 2 flexible oxide thin-film transistors channel accumulation layer source-drain electrodes
dewey-raw	620
isfreeaccess_bool	false
container_title	IEEE electron device letters
authorswithroles_txt_mv	Xiuling Li @@aut@@ Billah, Mohammad Masum @@oth@@ Mativenga, Mallory @@oth@@ Di Geng @@oth@@ Yong-Hwan Kim @@oth@@ Tae-Woong Kim @@oth@@ Young-Gug Seol @@oth@@ Jin Jang @@oth@@
publishDateDaySort_date	2015-01-01T00:00:00Z
hierarchy_top_id	129618993
dewey-sort	3620
id	OLC1968402780
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1968402780</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714172428.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/LED.2015.2451005</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1968402780</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1968402780</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Xiuling Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Performance evaluation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">flexible electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">a-IGZO semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TCAD simulations</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">InGaZnO</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gallium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Robustness</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">amorphous-indium-gallium-zinc oxide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">molybdenum gate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">carrier density</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">semiconductor device models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">thin film transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single gate-driven TFT</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bulk-accumulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">solution-processed polyimide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">tensile strain</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bulk accumulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">molybdenum</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">BA a-IGZO TFT</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Substrates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">polymers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">a-IGZO</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Logic gates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">carrier concentration</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mechanical bending stress</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">thin-film transistors (TFTs)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mechanical stability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Glass</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">flexible</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">indium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bending</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">silicon dioxide gate insulators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">amorphous semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">zinc compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">dual-gate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mechanical bending</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiO 2</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">flexible oxide thin-film transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">channel accumulation layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">source-drain electrodes</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Billah, Mohammad Masum</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mativenga, Mallory</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Di Geng</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yong-Hwan Kim</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae-Woong Kim</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Young-Gug Seol</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jin Jang</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">36(2015), 8, Seite 811-813</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:36</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:8</subfield><subfield code="g">pages:811-813</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/LED.2015.2451005</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">36</subfield><subfield code="j">2015</subfield><subfield code="e">8</subfield><subfield code="h">811-813</subfield></datafield></record></collection>
author	Xiuling Li
spellingShingle	Xiuling Li ddc 620 misc Performance evaluation misc flexible electronics misc a-IGZO semiconductor misc TCAD simulations misc InGaZnO misc gallium compounds misc Robustness misc amorphous-indium-gallium-zinc oxide misc molybdenum gate misc carrier density misc semiconductor device models misc thin film transistors misc single gate-driven TFT misc bulk-accumulation misc solution-processed polyimide misc tensile strain misc bulk accumulation misc molybdenum misc BA a-IGZO TFT misc Substrates misc polymers misc a-IGZO misc Logic gates misc carrier concentration misc mechanical bending stress misc thin-film transistors (TFTs) misc mechanical stability misc Glass misc flexible misc indium compounds misc bending misc silicon dioxide gate insulators misc amorphous semiconductors misc zinc compounds misc dual-gate misc mechanical bending misc SiO 2 misc flexible oxide thin-film transistors misc channel accumulation layer misc source-drain electrodes Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation
authorStr	Xiuling Li
ppnlink_with_tag_str_mv	@@773@@(DE-627)129618993
format	Article
dewey-ones	620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut
collection	OLC
remote_str	false
illustrated	Not Illustrated
issn	0193-8576
topic_title	620 DNB Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation Performance evaluation flexible electronics a-IGZO semiconductor TCAD simulations InGaZnO gallium compounds Robustness amorphous-indium-gallium-zinc oxide molybdenum gate carrier density semiconductor device models thin film transistors single gate-driven TFT bulk-accumulation solution-processed polyimide tensile strain bulk accumulation molybdenum BA a-IGZO TFT Substrates polymers a-IGZO Logic gates carrier concentration mechanical bending stress thin-film transistors (TFTs) mechanical stability Glass flexible indium compounds bending silicon dioxide gate insulators amorphous semiconductors zinc compounds dual-gate mechanical bending SiO 2 flexible oxide thin-film transistors channel accumulation layer source-drain electrodes
topic	ddc 620 misc Performance evaluation misc flexible electronics misc a-IGZO semiconductor misc TCAD simulations misc InGaZnO misc gallium compounds misc Robustness misc amorphous-indium-gallium-zinc oxide misc molybdenum gate misc carrier density misc semiconductor device models misc thin film transistors misc single gate-driven TFT misc bulk-accumulation misc solution-processed polyimide misc tensile strain misc bulk accumulation misc molybdenum misc BA a-IGZO TFT misc Substrates misc polymers misc a-IGZO misc Logic gates misc carrier concentration misc mechanical bending stress misc thin-film transistors (TFTs) misc mechanical stability misc Glass misc flexible misc indium compounds misc bending misc silicon dioxide gate insulators misc amorphous semiconductors misc zinc compounds misc dual-gate misc mechanical bending misc SiO 2 misc flexible oxide thin-film transistors misc channel accumulation layer misc source-drain electrodes
topic_unstemmed	ddc 620 misc Performance evaluation misc flexible electronics misc a-IGZO semiconductor misc TCAD simulations misc InGaZnO misc gallium compounds misc Robustness misc amorphous-indium-gallium-zinc oxide misc molybdenum gate misc carrier density misc semiconductor device models misc thin film transistors misc single gate-driven TFT misc bulk-accumulation misc solution-processed polyimide misc tensile strain misc bulk accumulation misc molybdenum misc BA a-IGZO TFT misc Substrates misc polymers misc a-IGZO misc Logic gates misc carrier concentration misc mechanical bending stress misc thin-film transistors (TFTs) misc mechanical stability misc Glass misc flexible misc indium compounds misc bending misc silicon dioxide gate insulators misc amorphous semiconductors misc zinc compounds misc dual-gate misc mechanical bending misc SiO 2 misc flexible oxide thin-film transistors misc channel accumulation layer misc source-drain electrodes
topic_browse	ddc 620 misc Performance evaluation misc flexible electronics misc a-IGZO semiconductor misc TCAD simulations misc InGaZnO misc gallium compounds misc Robustness misc amorphous-indium-gallium-zinc oxide misc molybdenum gate misc carrier density misc semiconductor device models misc thin film transistors misc single gate-driven TFT misc bulk-accumulation misc solution-processed polyimide misc tensile strain misc bulk accumulation misc molybdenum misc BA a-IGZO TFT misc Substrates misc polymers misc a-IGZO misc Logic gates misc carrier concentration misc mechanical bending stress misc thin-film transistors (TFTs) misc mechanical stability misc Glass misc flexible misc indium compounds misc bending misc silicon dioxide gate insulators misc amorphous semiconductors misc zinc compounds misc dual-gate misc mechanical bending misc SiO 2 misc flexible oxide thin-film transistors misc channel accumulation layer misc source-drain electrodes
format_facet	Aufsätze Gedruckte Aufsätze
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	nc
author2_variant	m m b mm mmb m m mm d g dg y h k yhk t w k twk y g s ygs j j jj
hierarchy_parent_title	IEEE electron device letters
hierarchy_parent_id	129618993
dewey-tens	620 - Engineering
hierarchy_top_title	IEEE electron device letters
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)129618993 (DE-600)245158-X (DE-576)015122115
title	Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation
ctrlnum	(DE-627)OLC1968402780 (DE-599)GBVOLC1968402780 (PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790 (KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk
title_full	Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation
author_sort	Xiuling Li
journal	IEEE electron device letters
journalStr	IEEE electron device letters
lang_code	eng
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2015
contenttype_str_mv	txt
container_start_page	811
author_browse	Xiuling Li
container_volume	36
class	620 DNB
format_se	Aufsätze
author-letter	Xiuling Li
doi_str_mv	10.1109/LED.2015.2451005
dewey-full	620
title_sort	highly robust flexible oxide thin-film transistors by bulk accumulation
title_auth	Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation
abstract	We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs.
abstractGer	We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs.
abstract_unstemmed	We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314
container_issue	8
title_short	Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation
url	http://dx.doi.org/10.1109/LED.2015.2451005 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762
remote_bool	false
author2	Billah, Mohammad Masum Mativenga, Mallory Di Geng Yong-Hwan Kim Tae-Woong Kim Young-Gug Seol Jin Jang
author2Str	Billah, Mohammad Masum Mativenga, Mallory Di Geng Yong-Hwan Kim Tae-Woong Kim Young-Gug Seol Jin Jang
ppnlink	129618993
mediatype_str_mv	n
isOA_txt	false
hochschulschrift_bool	false
author2_role	oth oth oth oth oth oth oth
doi_str	10.1109/LED.2015.2451005
up_date	2024-07-04T03:17:57.542Z
_version_	1803616861609263104
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1968402780</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714172428.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160206s2015 xx \|\|\|\|\| 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/LED.2015.2451005</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160617</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1968402780</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1968402780</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c1305-7ee6e3887b9e74f4ab3ef88357ae94f5c4c74389b110c61984659bb6d7ec3b790</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0101063820150000036000800811highlyrobustflexibleoxidethinfilmtransistorsbybulk</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="0" ind2=" "><subfield code="a">Xiuling Li</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We report the achievement of flexible oxide thin-film transistors (TFTs) that are highly robust under mechanical bending stress. Fabricated on solution-processed polyimide, the oxide TFTs employ the dual-gate structure with an amorphous-indium-gallium-zinc oxide (a-IGZO) semiconductor, silicon dioxide gate insulators, and molybdenum gate and source/drain electrodes. High mechanical stability is achieved by shorting the two gates together to induce bulk accumulation (BA)-a condition in which the channel accumulation layer of electrons extends the entire depth of the active layer. It is shown experimentally that the BA a-IGZO TFTs exhibit better stability under bending stress compared with single gate-driven TFTs. From TCAD simulations, the immunity to slight variations in carrier concentration under tensile strain is found to be a result of the high gate-drive intrinsic of the BA TFTs.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Performance evaluation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">flexible electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">a-IGZO semiconductor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TCAD simulations</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">InGaZnO</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">gallium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Robustness</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">amorphous-indium-gallium-zinc oxide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">molybdenum gate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">carrier density</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">semiconductor device models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">thin film transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">single gate-driven TFT</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bulk-accumulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">solution-processed polyimide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">tensile strain</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bulk accumulation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">molybdenum</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">BA a-IGZO TFT</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Substrates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">polymers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">a-IGZO</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Logic gates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">carrier concentration</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mechanical bending stress</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">thin-film transistors (TFTs)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mechanical stability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Glass</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">flexible</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">indium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">bending</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">silicon dioxide gate insulators</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">amorphous semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">zinc compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">dual-gate</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mechanical bending</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">SiO 2</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">flexible oxide thin-film transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">channel accumulation layer</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">source-drain electrodes</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Billah, Mohammad Masum</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mativenga, Mallory</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Di Geng</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Yong-Hwan Kim</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Tae-Woong Kim</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Young-Gug Seol</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="0" ind2=" "><subfield code="a">Jin Jang</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE electron device letters</subfield><subfield code="d">New York, NY : IEEE, 1980</subfield><subfield code="g">36(2015), 8, Seite 811-813</subfield><subfield code="w">(DE-627)129618993</subfield><subfield code="w">(DE-600)245158-X</subfield><subfield code="w">(DE-576)015122115</subfield><subfield code="x">0193-8576</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:36</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:8</subfield><subfield code="g">pages:811-813</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/LED.2015.2451005</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7140762</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4266</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4314</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">36</subfield><subfield code="j">2015</subfield><subfield code="e">8</subfield><subfield code="h">811-813</subfield></datafield></record></collection>
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