Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory
The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Xiaonan Yang [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 36(2015), 1, Seite 26-28 |
|---|---|
| Übergeordnetes Werk: |
volume:36 ; year:2015 ; number:1 ; pages:26-28 |
| Links: |
|---|
| DOI / URN: |
10.1109/LED.2014.2367104 |
|---|
| Katalog-ID: |
OLC1968404295 |
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| 520 | |a The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. | ||
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| 650 | 4 | |a gate bias dependence | |
| 650 | 4 | |a complex random telegraph noise behavior | |
| 650 | 4 | |a flash memories | |
| 650 | 4 | |a noise-type transition | |
| 650 | 4 | |a 1f noise | |
| 650 | 4 | |a spectroscopic analysis | |
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| 650 | 4 | |a threshold voltage | |
| 650 | 4 | |a NOR circuits | |
| 650 | 4 | |a stress-induced trap | |
| 650 | 4 | |a integrated circuit noise | |
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| 700 | 0 | |a Ming Liu |4 oth | |
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10.1109/LED.2014.2367104 doi PQ20160617 (DE-627)OLC1968404295 (DE-599)GBVOLC1968404295 (PRQ)c1300-103e1c93238012b7cd38024486394730445f00310815d8443ba1d1d12e2b535c0 (KEY)0101063820150000036000100026gatebiasdependenceofcomplexrandomtelegraphnoisebeh DE-627 ger DE-627 rakwb eng 620 DNB Xiaonan Yang verfasserin aut Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. size 65 nm Logic gates transition voltage random noise process-induced trap RTN gate bias dependence complex random telegraph noise behavior flash memories noise-type transition 1f noise spectroscopic analysis 1/f noise threshold voltage NOR circuits stress-induced trap integrated circuit noise Memories Tunneling integrated memory circuits NOR flash memory Zhiwei Zheng oth Yan Wang oth Zongliang Huo oth Lei Jin oth Dandan Jiang oth Zhongyong Wang oth Shengfen Chiu oth Hanming Wu oth Ming Liu oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 1, Seite 26-28 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:1 pages:26-28 http://dx.doi.org/10.1109/LED.2014.2367104 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6945790 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 1 26-28 |
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10.1109/LED.2014.2367104 doi PQ20160617 (DE-627)OLC1968404295 (DE-599)GBVOLC1968404295 (PRQ)c1300-103e1c93238012b7cd38024486394730445f00310815d8443ba1d1d12e2b535c0 (KEY)0101063820150000036000100026gatebiasdependenceofcomplexrandomtelegraphnoisebeh DE-627 ger DE-627 rakwb eng 620 DNB Xiaonan Yang verfasserin aut Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. size 65 nm Logic gates transition voltage random noise process-induced trap RTN gate bias dependence complex random telegraph noise behavior flash memories noise-type transition 1f noise spectroscopic analysis 1/f noise threshold voltage NOR circuits stress-induced trap integrated circuit noise Memories Tunneling integrated memory circuits NOR flash memory Zhiwei Zheng oth Yan Wang oth Zongliang Huo oth Lei Jin oth Dandan Jiang oth Zhongyong Wang oth Shengfen Chiu oth Hanming Wu oth Ming Liu oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 1, Seite 26-28 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:1 pages:26-28 http://dx.doi.org/10.1109/LED.2014.2367104 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6945790 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 1 26-28 |
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10.1109/LED.2014.2367104 doi PQ20160617 (DE-627)OLC1968404295 (DE-599)GBVOLC1968404295 (PRQ)c1300-103e1c93238012b7cd38024486394730445f00310815d8443ba1d1d12e2b535c0 (KEY)0101063820150000036000100026gatebiasdependenceofcomplexrandomtelegraphnoisebeh DE-627 ger DE-627 rakwb eng 620 DNB Xiaonan Yang verfasserin aut Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. size 65 nm Logic gates transition voltage random noise process-induced trap RTN gate bias dependence complex random telegraph noise behavior flash memories noise-type transition 1f noise spectroscopic analysis 1/f noise threshold voltage NOR circuits stress-induced trap integrated circuit noise Memories Tunneling integrated memory circuits NOR flash memory Zhiwei Zheng oth Yan Wang oth Zongliang Huo oth Lei Jin oth Dandan Jiang oth Zhongyong Wang oth Shengfen Chiu oth Hanming Wu oth Ming Liu oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 1, Seite 26-28 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:1 pages:26-28 http://dx.doi.org/10.1109/LED.2014.2367104 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6945790 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 1 26-28 |
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10.1109/LED.2014.2367104 doi PQ20160617 (DE-627)OLC1968404295 (DE-599)GBVOLC1968404295 (PRQ)c1300-103e1c93238012b7cd38024486394730445f00310815d8443ba1d1d12e2b535c0 (KEY)0101063820150000036000100026gatebiasdependenceofcomplexrandomtelegraphnoisebeh DE-627 ger DE-627 rakwb eng 620 DNB Xiaonan Yang verfasserin aut Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. size 65 nm Logic gates transition voltage random noise process-induced trap RTN gate bias dependence complex random telegraph noise behavior flash memories noise-type transition 1f noise spectroscopic analysis 1/f noise threshold voltage NOR circuits stress-induced trap integrated circuit noise Memories Tunneling integrated memory circuits NOR flash memory Zhiwei Zheng oth Yan Wang oth Zongliang Huo oth Lei Jin oth Dandan Jiang oth Zhongyong Wang oth Shengfen Chiu oth Hanming Wu oth Ming Liu oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 1, Seite 26-28 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:1 pages:26-28 http://dx.doi.org/10.1109/LED.2014.2367104 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6945790 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 1 26-28 |
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10.1109/LED.2014.2367104 doi PQ20160617 (DE-627)OLC1968404295 (DE-599)GBVOLC1968404295 (PRQ)c1300-103e1c93238012b7cd38024486394730445f00310815d8443ba1d1d12e2b535c0 (KEY)0101063820150000036000100026gatebiasdependenceofcomplexrandomtelegraphnoisebeh DE-627 ger DE-627 rakwb eng 620 DNB Xiaonan Yang verfasserin aut Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. size 65 nm Logic gates transition voltage random noise process-induced trap RTN gate bias dependence complex random telegraph noise behavior flash memories noise-type transition 1f noise spectroscopic analysis 1/f noise threshold voltage NOR circuits stress-induced trap integrated circuit noise Memories Tunneling integrated memory circuits NOR flash memory Zhiwei Zheng oth Yan Wang oth Zongliang Huo oth Lei Jin oth Dandan Jiang oth Zhongyong Wang oth Shengfen Chiu oth Hanming Wu oth Ming Liu oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 36(2015), 1, Seite 26-28 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:36 year:2015 number:1 pages:26-28 http://dx.doi.org/10.1109/LED.2014.2367104 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6945790 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 GBV_ILN_4314 AR 36 2015 1 26-28 |
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620 DNB Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory size 65 nm Logic gates transition voltage random noise process-induced trap RTN gate bias dependence complex random telegraph noise behavior flash memories noise-type transition 1f noise spectroscopic analysis 1/f noise threshold voltage NOR circuits stress-induced trap integrated circuit noise Memories Tunneling integrated memory circuits NOR flash memory |
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Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory |
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Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory |
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Xiaonan Yang |
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gate bias dependence of complex random telegraph noise behavior in 65-nm nor flash memory |
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Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory |
| abstract |
The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. |
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The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. |
| abstract_unstemmed |
The dependence of complex random telegraph noise (RTN) behavior on gate bias is investigated. Noise-type transition among 1/f noise, two-level RTN, and three-level RTN is observed depending on the gate bias. The transition can be detected in both program and erase states and the corresponding transition voltage decreases with the increase of threshold voltage. The phenomena are interpreted by the spectroscopic analysis of process-induced trap and stress-induced trap. A three regions model is finally proposed. |
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Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory |
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Zhiwei Zheng Yan Wang Zongliang Huo Lei Jin Dandan Jiang Zhongyong Wang Shengfen Chiu Hanming Wu Ming Liu |
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