Interaction of Indentation‐Induced Cracks on Single‐Crystal Silicon Carbide
Due to its transparency, high hardness, and low density, single‐crystal silicon carbide (SC‐SiC) is a candidate material for transparent armor and bullet‐proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H‐SiC and 6H‐SiC. Through single...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kunka, Cody [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Rechteinformationen: |
Nutzungsrecht: © 2015 The American Ceramic Society |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of the American Ceramic Society - Malden [u.a.] : Blackwell Publishing, 1918, 98(2015), 6, Seite 1891-1897 |
|---|---|
| Übergeordnetes Werk: |
volume:98 ; year:2015 ; number:6 ; pages:1891-1897 |
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| DOI / URN: |
10.1111/jace.13525 |
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| 520 | |a Due to its transparency, high hardness, and low density, single‐crystal silicon carbide (SC‐SiC) is a candidate material for transparent armor and bullet‐proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H‐SiC and 6H‐SiC. Through single indentation, sequential indentation, and theoretical calculations, the primary and secondary cleavage directions are shown to be <11̄20> and <10̄10>, respectively. It is also shown that no appreciable tertiary cleavage direction exists on the basal plane. This investigation is the first to report how single‐crystal silicon carbide responds to multiple indentation. The results have fundamental value in modeling its fracture behavior. | ||
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10.1111/jace.13525 doi PQ20160617 (DE-627)OLC1968764585 (DE-599)GBVOLC1968764585 (PRQ)c2249-b2153b50ab655ece9ebaacb228383dbc861e07f399fecd0e1c7b1012c94073cf0 (KEY)0108608120150000098000601891interactionofindentationinducedcracksonsinglecryst DE-627 ger DE-627 rakwb eng 660 DNB Kunka, Cody verfasserin aut Interaction of Indentation‐Induced Cracks on Single‐Crystal Silicon Carbide 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Due to its transparency, high hardness, and low density, single‐crystal silicon carbide (SC‐SiC) is a candidate material for transparent armor and bullet‐proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H‐SiC and 6H‐SiC. Through single indentation, sequential indentation, and theoretical calculations, the primary and secondary cleavage directions are shown to be <11̄20> and <10̄10>, respectively. It is also shown that no appreciable tertiary cleavage direction exists on the basal plane. This investigation is the first to report how single‐crystal silicon carbide responds to multiple indentation. The results have fundamental value in modeling its fracture behavior. Nutzungsrecht: © 2015 The American Ceramic Society Ceramics Silicon carbide Anisotropy Fracture toughness Trachet, Alison oth Subhash, Ghatu oth Lara‐Curzio, E oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 98(2015), 6, Seite 1891-1897 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:98 year:2015 number:6 pages:1891-1897 http://dx.doi.org/10.1111/jace.13525 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.13525/abstract http://search.proquest.com/docview/1690004102 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2057 AR 98 2015 6 1891-1897 |
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10.1111/jace.13525 doi PQ20160617 (DE-627)OLC1968764585 (DE-599)GBVOLC1968764585 (PRQ)c2249-b2153b50ab655ece9ebaacb228383dbc861e07f399fecd0e1c7b1012c94073cf0 (KEY)0108608120150000098000601891interactionofindentationinducedcracksonsinglecryst DE-627 ger DE-627 rakwb eng 660 DNB Kunka, Cody verfasserin aut Interaction of Indentation‐Induced Cracks on Single‐Crystal Silicon Carbide 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Due to its transparency, high hardness, and low density, single‐crystal silicon carbide (SC‐SiC) is a candidate material for transparent armor and bullet‐proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H‐SiC and 6H‐SiC. Through single indentation, sequential indentation, and theoretical calculations, the primary and secondary cleavage directions are shown to be <11̄20> and <10̄10>, respectively. It is also shown that no appreciable tertiary cleavage direction exists on the basal plane. This investigation is the first to report how single‐crystal silicon carbide responds to multiple indentation. The results have fundamental value in modeling its fracture behavior. Nutzungsrecht: © 2015 The American Ceramic Society Ceramics Silicon carbide Anisotropy Fracture toughness Trachet, Alison oth Subhash, Ghatu oth Lara‐Curzio, E oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 98(2015), 6, Seite 1891-1897 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:98 year:2015 number:6 pages:1891-1897 http://dx.doi.org/10.1111/jace.13525 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.13525/abstract http://search.proquest.com/docview/1690004102 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2057 AR 98 2015 6 1891-1897 |
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10.1111/jace.13525 doi PQ20160617 (DE-627)OLC1968764585 (DE-599)GBVOLC1968764585 (PRQ)c2249-b2153b50ab655ece9ebaacb228383dbc861e07f399fecd0e1c7b1012c94073cf0 (KEY)0108608120150000098000601891interactionofindentationinducedcracksonsinglecryst DE-627 ger DE-627 rakwb eng 660 DNB Kunka, Cody verfasserin aut Interaction of Indentation‐Induced Cracks on Single‐Crystal Silicon Carbide 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Due to its transparency, high hardness, and low density, single‐crystal silicon carbide (SC‐SiC) is a candidate material for transparent armor and bullet‐proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H‐SiC and 6H‐SiC. Through single indentation, sequential indentation, and theoretical calculations, the primary and secondary cleavage directions are shown to be <11̄20> and <10̄10>, respectively. It is also shown that no appreciable tertiary cleavage direction exists on the basal plane. This investigation is the first to report how single‐crystal silicon carbide responds to multiple indentation. The results have fundamental value in modeling its fracture behavior. Nutzungsrecht: © 2015 The American Ceramic Society Ceramics Silicon carbide Anisotropy Fracture toughness Trachet, Alison oth Subhash, Ghatu oth Lara‐Curzio, E oth Enthalten in Journal of the American Ceramic Society Malden [u.a.] : Blackwell Publishing, 1918 98(2015), 6, Seite 1891-1897 (DE-627)129550272 (DE-600)219232-9 (DE-576)015003671 0002-7820 nnns volume:98 year:2015 number:6 pages:1891-1897 http://dx.doi.org/10.1111/jace.13525 Volltext http://onlinelibrary.wiley.com/doi/10.1111/jace.13525/abstract http://search.proquest.com/docview/1690004102 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-CHE GBV_ILN_22 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2014 GBV_ILN_2057 AR 98 2015 6 1891-1897 |
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interaction of indentation‐induced cracks on single‐crystal silicon carbide |
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Interaction of Indentation‐Induced Cracks on Single‐Crystal Silicon Carbide |
| abstract |
Due to its transparency, high hardness, and low density, single‐crystal silicon carbide (SC‐SiC) is a candidate material for transparent armor and bullet‐proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H‐SiC and 6H‐SiC. Through single indentation, sequential indentation, and theoretical calculations, the primary and secondary cleavage directions are shown to be <11̄20> and <10̄10>, respectively. It is also shown that no appreciable tertiary cleavage direction exists on the basal plane. This investigation is the first to report how single‐crystal silicon carbide responds to multiple indentation. The results have fundamental value in modeling its fracture behavior. |
| abstractGer |
Due to its transparency, high hardness, and low density, single‐crystal silicon carbide (SC‐SiC) is a candidate material for transparent armor and bullet‐proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H‐SiC and 6H‐SiC. Through single indentation, sequential indentation, and theoretical calculations, the primary and secondary cleavage directions are shown to be <11̄20> and <10̄10>, respectively. It is also shown that no appreciable tertiary cleavage direction exists on the basal plane. This investigation is the first to report how single‐crystal silicon carbide responds to multiple indentation. The results have fundamental value in modeling its fracture behavior. |
| abstract_unstemmed |
Due to its transparency, high hardness, and low density, single‐crystal silicon carbide (SC‐SiC) is a candidate material for transparent armor and bullet‐proof windows. This manuscript explores the fracture anisotropy of the basal plane of two common HCP polytypes: 4H‐SiC and 6H‐SiC. Through single indentation, sequential indentation, and theoretical calculations, the primary and secondary cleavage directions are shown to be <11̄20> and <10̄10>, respectively. It is also shown that no appreciable tertiary cleavage direction exists on the basal plane. This investigation is the first to report how single‐crystal silicon carbide responds to multiple indentation. The results have fundamental value in modeling its fracture behavior. |
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| title_short |
Interaction of Indentation‐Induced Cracks on Single‐Crystal Silicon Carbide |
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Trachet, Alison Subhash, Ghatu Lara‐Curzio, E |
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