Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor
We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process f...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Fukushima, Akio [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
magnetic tunnel junction (MTJ) |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on magnetics - New York, NY : IEEE, 1965, 51(2015), 12, Seite 1-4 |
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| Übergeordnetes Werk: |
volume:51 ; year:2015 ; number:12 ; pages:1-4 |
| Links: |
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| DOI / URN: |
10.1109/TMAG.2015.2455021 |
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| Katalog-ID: |
OLC1969493461 |
|---|
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| 245 | 1 | 0 | |a Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor |
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| 520 | |a We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. | ||
| 650 | 4 | |a spintronics | |
| 650 | 4 | |a Magnetization | |
| 650 | 4 | |a Logic gates | |
| 650 | 4 | |a magnetic tunnel junction (MTJ) | |
| 650 | 4 | |a voltage-induced magnetic anisotropy change | |
| 650 | 4 | |a Transistors | |
| 650 | 4 | |a Resistance | |
| 650 | 4 | |a spin transistor | |
| 650 | 4 | |a Junctions | |
| 650 | 4 | |a Magnetic anisotropy | |
| 650 | 4 | |a Magnetic tunneling | |
| 650 | 4 | |a Electrons | |
| 700 | 1 | |a Matsumoto, Rie |4 oth | |
| 700 | 1 | |a Sekiya, Daisuke |4 oth | |
| 700 | 1 | |a Yakushiji, Kay |4 oth | |
| 700 | 1 | |a Miwa, Shinji |4 oth | |
| 700 | 1 | |a Suzuki, Yoshishige |4 oth | |
| 700 | 1 | |a Nozaki, Takayuki |4 oth | |
| 700 | 1 | |a Kubota, Hitoshi |4 oth | |
| 700 | 1 | |a Shiota, Yoichi |4 oth | |
| 700 | 1 | |a Yuasa, Shinji |4 oth | |
| 700 | 1 | |a Konishi, Katsunori |4 oth | |
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10.1109/TMAG.2015.2455021 doi PQ20160211 (DE-627)OLC1969493461 (DE-599)GBVOLC1969493461 (PRQ)c990-c16474970875bca23614747d598765eb0d4f48389bb5d86a9aece7338de2fdc90 (KEY)0061452120150000051001200001threeterminaldeviceforrealizingavoltagedrivenspint DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Fukushima, Akio verfasserin aut Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. spintronics Magnetization Logic gates magnetic tunnel junction (MTJ) voltage-induced magnetic anisotropy change Transistors Resistance spin transistor Junctions Magnetic anisotropy Magnetic tunneling Electrons Matsumoto, Rie oth Sekiya, Daisuke oth Yakushiji, Kay oth Miwa, Shinji oth Suzuki, Yoshishige oth Nozaki, Takayuki oth Kubota, Hitoshi oth Shiota, Yoichi oth Yuasa, Shinji oth Konishi, Katsunori oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 51(2015), 12, Seite 1-4 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:51 year:2015 number:12 pages:1-4 http://dx.doi.org/10.1109/TMAG.2015.2455021 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7154474 http://search.proquest.com/docview/1738824110 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 51 2015 12 1-4 |
| spelling |
10.1109/TMAG.2015.2455021 doi PQ20160211 (DE-627)OLC1969493461 (DE-599)GBVOLC1969493461 (PRQ)c990-c16474970875bca23614747d598765eb0d4f48389bb5d86a9aece7338de2fdc90 (KEY)0061452120150000051001200001threeterminaldeviceforrealizingavoltagedrivenspint DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Fukushima, Akio verfasserin aut Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. spintronics Magnetization Logic gates magnetic tunnel junction (MTJ) voltage-induced magnetic anisotropy change Transistors Resistance spin transistor Junctions Magnetic anisotropy Magnetic tunneling Electrons Matsumoto, Rie oth Sekiya, Daisuke oth Yakushiji, Kay oth Miwa, Shinji oth Suzuki, Yoshishige oth Nozaki, Takayuki oth Kubota, Hitoshi oth Shiota, Yoichi oth Yuasa, Shinji oth Konishi, Katsunori oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 51(2015), 12, Seite 1-4 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:51 year:2015 number:12 pages:1-4 http://dx.doi.org/10.1109/TMAG.2015.2455021 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7154474 http://search.proquest.com/docview/1738824110 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 51 2015 12 1-4 |
| allfields_unstemmed |
10.1109/TMAG.2015.2455021 doi PQ20160211 (DE-627)OLC1969493461 (DE-599)GBVOLC1969493461 (PRQ)c990-c16474970875bca23614747d598765eb0d4f48389bb5d86a9aece7338de2fdc90 (KEY)0061452120150000051001200001threeterminaldeviceforrealizingavoltagedrivenspint DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Fukushima, Akio verfasserin aut Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. spintronics Magnetization Logic gates magnetic tunnel junction (MTJ) voltage-induced magnetic anisotropy change Transistors Resistance spin transistor Junctions Magnetic anisotropy Magnetic tunneling Electrons Matsumoto, Rie oth Sekiya, Daisuke oth Yakushiji, Kay oth Miwa, Shinji oth Suzuki, Yoshishige oth Nozaki, Takayuki oth Kubota, Hitoshi oth Shiota, Yoichi oth Yuasa, Shinji oth Konishi, Katsunori oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 51(2015), 12, Seite 1-4 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:51 year:2015 number:12 pages:1-4 http://dx.doi.org/10.1109/TMAG.2015.2455021 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7154474 http://search.proquest.com/docview/1738824110 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 51 2015 12 1-4 |
| allfieldsGer |
10.1109/TMAG.2015.2455021 doi PQ20160211 (DE-627)OLC1969493461 (DE-599)GBVOLC1969493461 (PRQ)c990-c16474970875bca23614747d598765eb0d4f48389bb5d86a9aece7338de2fdc90 (KEY)0061452120150000051001200001threeterminaldeviceforrealizingavoltagedrivenspint DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Fukushima, Akio verfasserin aut Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. spintronics Magnetization Logic gates magnetic tunnel junction (MTJ) voltage-induced magnetic anisotropy change Transistors Resistance spin transistor Junctions Magnetic anisotropy Magnetic tunneling Electrons Matsumoto, Rie oth Sekiya, Daisuke oth Yakushiji, Kay oth Miwa, Shinji oth Suzuki, Yoshishige oth Nozaki, Takayuki oth Kubota, Hitoshi oth Shiota, Yoichi oth Yuasa, Shinji oth Konishi, Katsunori oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 51(2015), 12, Seite 1-4 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:51 year:2015 number:12 pages:1-4 http://dx.doi.org/10.1109/TMAG.2015.2455021 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7154474 http://search.proquest.com/docview/1738824110 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 51 2015 12 1-4 |
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10.1109/TMAG.2015.2455021 doi PQ20160211 (DE-627)OLC1969493461 (DE-599)GBVOLC1969493461 (PRQ)c990-c16474970875bca23614747d598765eb0d4f48389bb5d86a9aece7338de2fdc90 (KEY)0061452120150000051001200001threeterminaldeviceforrealizingavoltagedrivenspint DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Fukushima, Akio verfasserin aut Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor 2015 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. spintronics Magnetization Logic gates magnetic tunnel junction (MTJ) voltage-induced magnetic anisotropy change Transistors Resistance spin transistor Junctions Magnetic anisotropy Magnetic tunneling Electrons Matsumoto, Rie oth Sekiya, Daisuke oth Yakushiji, Kay oth Miwa, Shinji oth Suzuki, Yoshishige oth Nozaki, Takayuki oth Kubota, Hitoshi oth Shiota, Yoichi oth Yuasa, Shinji oth Konishi, Katsunori oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 51(2015), 12, Seite 1-4 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:51 year:2015 number:12 pages:1-4 http://dx.doi.org/10.1109/TMAG.2015.2455021 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7154474 http://search.proquest.com/docview/1738824110 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 51 2015 12 1-4 |
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Enthalten in IEEE transactions on magnetics 51(2015), 12, Seite 1-4 volume:51 year:2015 number:12 pages:1-4 |
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spintronics Magnetization Logic gates magnetic tunnel junction (MTJ) voltage-induced magnetic anisotropy change Transistors Resistance spin transistor Junctions Magnetic anisotropy Magnetic tunneling Electrons |
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Fukushima, Akio @@aut@@ Matsumoto, Rie @@oth@@ Sekiya, Daisuke @@oth@@ Yakushiji, Kay @@oth@@ Miwa, Shinji @@oth@@ Suzuki, Yoshishige @@oth@@ Nozaki, Takayuki @@oth@@ Kubota, Hitoshi @@oth@@ Shiota, Yoichi @@oth@@ Yuasa, Shinji @@oth@@ Konishi, Katsunori @@oth@@ |
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Fukushima, Akio |
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three-terminal device for realizing a voltage-driven spin transistor |
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Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor |
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We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. |
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We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. |
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We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors. |
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Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor |
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Matsumoto, Rie Sekiya, Daisuke Yakushiji, Kay Miwa, Shinji Suzuki, Yoshishige Nozaki, Takayuki Kubota, Hitoshi Shiota, Yoichi Yuasa, Shinji Konishi, Katsunori |
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Matsumoto, Rie Sekiya, Daisuke Yakushiji, Kay Miwa, Shinji Suzuki, Yoshishige Nozaki, Takayuki Kubota, Hitoshi Shiota, Yoichi Yuasa, Shinji Konishi, Katsunori |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1969493461</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220223135116.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160211s2015 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TMAG.2015.2455021</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160211</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1969493461</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1969493461</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c990-c16474970875bca23614747d598765eb0d4f48389bb5d86a9aece7338de2fdc90</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0061452120150000051001200001threeterminaldeviceforrealizingavoltagedrivenspint</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.75</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.16</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Fukushima, Akio</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Three-Terminal Device for Realizing a Voltage-Driven Spin Transistor</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2015</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We propose a three-terminal device incorporating a magnetic tunnel junction (MTJ) in which the free layer magnetization can be controlled by the separated gate electrode through voltage-induced magnetic anisotropy change-in other words, a voltage-driven spin transistor. We have developed a process for fabricating a three-terminal structure in which the drain and source junctions are connected through the common free layer. The theoretical calculations allow us to discuss how to achieve high-power gain. Because the gate resistance decreases as the junction size decreases, higher power gain can be obtained with a smaller junction size. Power amplification of greater than <inline-formula> <tex-math notation="LaTeX">10^{\mathrm {4}} </tex-math></inline-formula> is achievable if we employ an MTJ with a resistance-area product less than <inline-formula> <tex-math notation="LaTeX">5~\Omega \cdot \mu \text{m}^{\mathrm {\mathbf {2}}} </tex-math></inline-formula> and a junction size less than 50 nm. This three-terminal device structure for realizing a voltage-driven spin transistor represents a promising contribution to the development of high-performance spin transistors.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">spintronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Magnetization</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Logic gates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">magnetic tunnel junction (MTJ)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">voltage-induced magnetic anisotropy change</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transistors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">spin transistor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Junctions</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Magnetic anisotropy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Magnetic tunneling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrons</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Matsumoto, Rie</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sekiya, Daisuke</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yakushiji, Kay</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Miwa, Shinji</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Suzuki, Yoshishige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nozaki, Takayuki</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kubota, Hitoshi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shiota, Yoichi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yuasa, Shinji</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Konishi, Katsunori</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on magnetics</subfield><subfield code="d">New York, NY : IEEE, 1965</subfield><subfield code="g">51(2015), 12, Seite 1-4</subfield><subfield code="w">(DE-627)129602078</subfield><subfield code="w">(DE-600)241508-2</subfield><subfield code="w">(DE-576)015095789</subfield><subfield code="x">0018-9464</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:51</subfield><subfield code="g">year:2015</subfield><subfield code="g">number:12</subfield><subfield code="g">pages:1-4</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TMAG.2015.2455021</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7154474</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://search.proquest.com/docview/1738824110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.75</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.16</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">51</subfield><subfield code="j">2015</subfield><subfield code="e">12</subfield><subfield code="h">1-4</subfield></datafield></record></collection>
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