Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit
One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has incre...
Ausführliche Beschreibung
Autor*in: |
Zhang, Yuhan [verfasserIn] |
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Englisch |
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2016 |
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Enthalten in: Physical review letters - Ridge, NY : American Physical Society, 1958, 116(2016), 1 |
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Übergeordnetes Werk: |
volume:116 ; year:2016 ; number:1 |
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DOI / URN: |
10.1103/PhysRevLett.116.016602 |
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OLC1970447087 |
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520 | |a One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. | ||
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700 | 1 | |a He, Daowei |4 oth | |
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10.1103/PhysRevLett.116.016602 doi PQ20160430 (DE-627)OLC1970447087 (DE-599)GBVOLC1970447087 (PRQ)a1215-4fa279b051e1744bea72793f72dc39ecbba9c85648da162137a863711457c7720 (KEY)0009201020160000116000100000probingcarriertransportandstructurepropertyrelatio DE-627 ger DE-627 rakwb eng 550 DNB UA 1000 AVZ rvk Zhang, Yuhan verfasserin aut Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. Mesoscale and Nanoscale Physics Materials Science Condensed Matter Qiao, Jingsi oth Gao, Si oth Hu, Fengrui oth He, Daowei oth Wu, Bing oth Yang, Ziyi oth Xu, Bingchen oth Li, Yun oth Shi, Yi oth Ji, Wei oth Wang, Peng oth Wang, Xiaoyong oth Xiao, Min oth Xu, Hangxun oth Xu, Jian-Bin oth Wang, Xinran oth Enthalten in Physical review letters Ridge, NY : American Physical Society, 1958 116(2016), 1 (DE-627)129503959 (DE-600)208853-8 (DE-576)014907267 0031-9007 nnns volume:116 year:2016 number:1 http://dx.doi.org/10.1103/PhysRevLett.116.016602 Volltext http://www.ncbi.nlm.nih.gov/pubmed/26799035 http://arxiv.org/abs/1601.01893 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2095 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2286 UA 1000 AR 116 2016 1 |
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10.1103/PhysRevLett.116.016602 doi PQ20160430 (DE-627)OLC1970447087 (DE-599)GBVOLC1970447087 (PRQ)a1215-4fa279b051e1744bea72793f72dc39ecbba9c85648da162137a863711457c7720 (KEY)0009201020160000116000100000probingcarriertransportandstructurepropertyrelatio DE-627 ger DE-627 rakwb eng 550 DNB UA 1000 AVZ rvk Zhang, Yuhan verfasserin aut Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. Mesoscale and Nanoscale Physics Materials Science Condensed Matter Qiao, Jingsi oth Gao, Si oth Hu, Fengrui oth He, Daowei oth Wu, Bing oth Yang, Ziyi oth Xu, Bingchen oth Li, Yun oth Shi, Yi oth Ji, Wei oth Wang, Peng oth Wang, Xiaoyong oth Xiao, Min oth Xu, Hangxun oth Xu, Jian-Bin oth Wang, Xinran oth Enthalten in Physical review letters Ridge, NY : American Physical Society, 1958 116(2016), 1 (DE-627)129503959 (DE-600)208853-8 (DE-576)014907267 0031-9007 nnns volume:116 year:2016 number:1 http://dx.doi.org/10.1103/PhysRevLett.116.016602 Volltext http://www.ncbi.nlm.nih.gov/pubmed/26799035 http://arxiv.org/abs/1601.01893 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2095 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2286 UA 1000 AR 116 2016 1 |
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10.1103/PhysRevLett.116.016602 doi PQ20160430 (DE-627)OLC1970447087 (DE-599)GBVOLC1970447087 (PRQ)a1215-4fa279b051e1744bea72793f72dc39ecbba9c85648da162137a863711457c7720 (KEY)0009201020160000116000100000probingcarriertransportandstructurepropertyrelatio DE-627 ger DE-627 rakwb eng 550 DNB UA 1000 AVZ rvk Zhang, Yuhan verfasserin aut Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. Mesoscale and Nanoscale Physics Materials Science Condensed Matter Qiao, Jingsi oth Gao, Si oth Hu, Fengrui oth He, Daowei oth Wu, Bing oth Yang, Ziyi oth Xu, Bingchen oth Li, Yun oth Shi, Yi oth Ji, Wei oth Wang, Peng oth Wang, Xiaoyong oth Xiao, Min oth Xu, Hangxun oth Xu, Jian-Bin oth Wang, Xinran oth Enthalten in Physical review letters Ridge, NY : American Physical Society, 1958 116(2016), 1 (DE-627)129503959 (DE-600)208853-8 (DE-576)014907267 0031-9007 nnns volume:116 year:2016 number:1 http://dx.doi.org/10.1103/PhysRevLett.116.016602 Volltext http://www.ncbi.nlm.nih.gov/pubmed/26799035 http://arxiv.org/abs/1601.01893 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2095 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2286 UA 1000 AR 116 2016 1 |
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10.1103/PhysRevLett.116.016602 doi PQ20160430 (DE-627)OLC1970447087 (DE-599)GBVOLC1970447087 (PRQ)a1215-4fa279b051e1744bea72793f72dc39ecbba9c85648da162137a863711457c7720 (KEY)0009201020160000116000100000probingcarriertransportandstructurepropertyrelatio DE-627 ger DE-627 rakwb eng 550 DNB UA 1000 AVZ rvk Zhang, Yuhan verfasserin aut Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. Mesoscale and Nanoscale Physics Materials Science Condensed Matter Qiao, Jingsi oth Gao, Si oth Hu, Fengrui oth He, Daowei oth Wu, Bing oth Yang, Ziyi oth Xu, Bingchen oth Li, Yun oth Shi, Yi oth Ji, Wei oth Wang, Peng oth Wang, Xiaoyong oth Xiao, Min oth Xu, Hangxun oth Xu, Jian-Bin oth Wang, Xinran oth Enthalten in Physical review letters Ridge, NY : American Physical Society, 1958 116(2016), 1 (DE-627)129503959 (DE-600)208853-8 (DE-576)014907267 0031-9007 nnns volume:116 year:2016 number:1 http://dx.doi.org/10.1103/PhysRevLett.116.016602 Volltext http://www.ncbi.nlm.nih.gov/pubmed/26799035 http://arxiv.org/abs/1601.01893 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2095 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2286 UA 1000 AR 116 2016 1 |
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10.1103/PhysRevLett.116.016602 doi PQ20160430 (DE-627)OLC1970447087 (DE-599)GBVOLC1970447087 (PRQ)a1215-4fa279b051e1744bea72793f72dc39ecbba9c85648da162137a863711457c7720 (KEY)0009201020160000116000100000probingcarriertransportandstructurepropertyrelatio DE-627 ger DE-627 rakwb eng 550 DNB UA 1000 AVZ rvk Zhang, Yuhan verfasserin aut Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. Mesoscale and Nanoscale Physics Materials Science Condensed Matter Qiao, Jingsi oth Gao, Si oth Hu, Fengrui oth He, Daowei oth Wu, Bing oth Yang, Ziyi oth Xu, Bingchen oth Li, Yun oth Shi, Yi oth Ji, Wei oth Wang, Peng oth Wang, Xiaoyong oth Xiao, Min oth Xu, Hangxun oth Xu, Jian-Bin oth Wang, Xinran oth Enthalten in Physical review letters Ridge, NY : American Physical Society, 1958 116(2016), 1 (DE-627)129503959 (DE-600)208853-8 (DE-576)014907267 0031-9007 nnns volume:116 year:2016 number:1 http://dx.doi.org/10.1103/PhysRevLett.116.016602 Volltext http://www.ncbi.nlm.nih.gov/pubmed/26799035 http://arxiv.org/abs/1601.01893 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_22 GBV_ILN_40 GBV_ILN_47 GBV_ILN_55 GBV_ILN_59 GBV_ILN_60 GBV_ILN_70 GBV_ILN_130 GBV_ILN_2004 GBV_ILN_2016 GBV_ILN_2095 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_2286 UA 1000 AR 116 2016 1 |
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Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit |
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probing carrier transport and structure-property relationship of highly ordered organic semiconductors at the two-dimensional limit |
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Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit |
abstract |
One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. |
abstractGer |
One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. |
abstract_unstemmed |
One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3 nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals. |
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Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit |
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http://dx.doi.org/10.1103/PhysRevLett.116.016602 http://www.ncbi.nlm.nih.gov/pubmed/26799035 http://arxiv.org/abs/1601.01893 |
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