Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

Gespeichert in:

Autor*in:	Lee, In-Hwan [verfasserIn] Polyakov, A. Y Smirnov, N. B Yakimov, E. B Pearton, S. J

Format:	Artikel
Sprache:	Englisch

Erschienen:	2016

Übergeordnetes Werk:	Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 119(2016), 1, Seite 15103
Übergeordnetes Werk:	volume:119 ; year:2016 ; number:1 ; pages:15103

Links:	Volltext

DOI / URN:	10.1063/1.4939649

Katalog-ID:	OLC1970858931

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