Electrostatic properties of two-dimensional WSe2 nanostructures
Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanopla...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lu, Donglin [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Rechteinformationen: |
Nutzungsrecht: © AIP Publishing LLC |
|---|
| Übergeordnetes Werk: |
Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 119(2016), 3, Seite 35301 |
|---|---|
| Übergeordnetes Werk: |
volume:119 ; year:2016 ; number:3 ; pages:35301 |
| Links: |
|---|
| DOI / URN: |
10.1063/1.4940160 |
|---|
| Katalog-ID: |
OLC1970859555 |
|---|
| LEADER | 01000caa a2200265 4500 | ||
|---|---|---|---|
| 001 | OLC1970859555 | ||
| 003 | DE-627 | ||
| 005 | 20230714180756.0 | ||
| 007 | tu | ||
| 008 | 160212s2016 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1063/1.4940160 |2 doi | |
| 028 | 5 | 2 | |a PQ20160212 |
| 035 | |a (DE-627)OLC1970859555 | ||
| 035 | |a (DE-599)GBVOLC1970859555 | ||
| 035 | |a (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 | ||
| 035 | |a (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 530 |q DNB |
| 100 | 1 | |a Lu, Donglin |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Electrostatic properties of two-dimensional WSe2 nanostructures |
| 264 | 1 | |c 2016 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 520 | |a Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. | ||
| 540 | |a Nutzungsrecht: © AIP Publishing LLC | ||
| 700 | 1 | |a Hao, Guolin |4 oth | |
| 700 | 1 | |a Kou, Liangzhi |4 oth | |
| 700 | 1 | |a Zhong, Jianxin |4 oth | |
| 700 | 1 | |a Tang, Chao |4 oth | |
| 700 | 1 | |a Li, Jin |4 oth | |
| 700 | 1 | |a Peng, Jie |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of applied physics |d Melville, NY : AIP, 1937 |g 119(2016), 3, Seite 35301 |w (DE-627)129079030 |w (DE-600)3112-4 |w (DE-576)014411652 |x 0021-8979 |7 nnns |
| 773 | 1 | 8 | |g volume:119 |g year:2016 |g number:3 |g pages:35301 |
| 856 | 4 | 1 | |u http://dx.doi.org/10.1063/1.4940160 |3 Volltext |
| 856 | 4 | 2 | |u http://dx.doi.org/10.1063/1.4940160 |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_21 | ||
| 912 | |a GBV_ILN_59 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2279 | ||
| 912 | |a GBV_ILN_4319 | ||
| 951 | |a AR | ||
| 952 | |d 119 |j 2016 |e 3 |h 35301 | ||
| author_variant |
d l dl |
|---|---|
| matchkey_str |
article:00218979:2016----::lcrsaipoeteotoiesoawe |
| hierarchy_sort_str |
2016 |
| publishDate |
2016 |
| allfields |
10.1063/1.4940160 doi PQ20160212 (DE-627)OLC1970859555 (DE-599)GBVOLC1970859555 (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr DE-627 ger DE-627 rakwb eng 530 DNB Lu, Donglin verfasserin aut Electrostatic properties of two-dimensional WSe2 nanostructures 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. Nutzungsrecht: © AIP Publishing LLC Hao, Guolin oth Kou, Liangzhi oth Zhong, Jianxin oth Tang, Chao oth Li, Jin oth Peng, Jie oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 119(2016), 3, Seite 35301 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:119 year:2016 number:3 pages:35301 http://dx.doi.org/10.1063/1.4940160 Volltext http://dx.doi.org/10.1063/1.4940160 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 119 2016 3 35301 |
| spelling |
10.1063/1.4940160 doi PQ20160212 (DE-627)OLC1970859555 (DE-599)GBVOLC1970859555 (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr DE-627 ger DE-627 rakwb eng 530 DNB Lu, Donglin verfasserin aut Electrostatic properties of two-dimensional WSe2 nanostructures 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. Nutzungsrecht: © AIP Publishing LLC Hao, Guolin oth Kou, Liangzhi oth Zhong, Jianxin oth Tang, Chao oth Li, Jin oth Peng, Jie oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 119(2016), 3, Seite 35301 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:119 year:2016 number:3 pages:35301 http://dx.doi.org/10.1063/1.4940160 Volltext http://dx.doi.org/10.1063/1.4940160 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 119 2016 3 35301 |
| allfields_unstemmed |
10.1063/1.4940160 doi PQ20160212 (DE-627)OLC1970859555 (DE-599)GBVOLC1970859555 (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr DE-627 ger DE-627 rakwb eng 530 DNB Lu, Donglin verfasserin aut Electrostatic properties of two-dimensional WSe2 nanostructures 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. Nutzungsrecht: © AIP Publishing LLC Hao, Guolin oth Kou, Liangzhi oth Zhong, Jianxin oth Tang, Chao oth Li, Jin oth Peng, Jie oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 119(2016), 3, Seite 35301 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:119 year:2016 number:3 pages:35301 http://dx.doi.org/10.1063/1.4940160 Volltext http://dx.doi.org/10.1063/1.4940160 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 119 2016 3 35301 |
| allfieldsGer |
10.1063/1.4940160 doi PQ20160212 (DE-627)OLC1970859555 (DE-599)GBVOLC1970859555 (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr DE-627 ger DE-627 rakwb eng 530 DNB Lu, Donglin verfasserin aut Electrostatic properties of two-dimensional WSe2 nanostructures 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. Nutzungsrecht: © AIP Publishing LLC Hao, Guolin oth Kou, Liangzhi oth Zhong, Jianxin oth Tang, Chao oth Li, Jin oth Peng, Jie oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 119(2016), 3, Seite 35301 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:119 year:2016 number:3 pages:35301 http://dx.doi.org/10.1063/1.4940160 Volltext http://dx.doi.org/10.1063/1.4940160 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 119 2016 3 35301 |
| allfieldsSound |
10.1063/1.4940160 doi PQ20160212 (DE-627)OLC1970859555 (DE-599)GBVOLC1970859555 (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr DE-627 ger DE-627 rakwb eng 530 DNB Lu, Donglin verfasserin aut Electrostatic properties of two-dimensional WSe2 nanostructures 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. Nutzungsrecht: © AIP Publishing LLC Hao, Guolin oth Kou, Liangzhi oth Zhong, Jianxin oth Tang, Chao oth Li, Jin oth Peng, Jie oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 119(2016), 3, Seite 35301 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:119 year:2016 number:3 pages:35301 http://dx.doi.org/10.1063/1.4940160 Volltext http://dx.doi.org/10.1063/1.4940160 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 119 2016 3 35301 |
| language |
English |
| source |
Enthalten in Journal of applied physics 119(2016), 3, Seite 35301 volume:119 year:2016 number:3 pages:35301 |
| sourceStr |
Enthalten in Journal of applied physics 119(2016), 3, Seite 35301 volume:119 year:2016 number:3 pages:35301 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Journal of applied physics |
| authorswithroles_txt_mv |
Lu, Donglin @@aut@@ Hao, Guolin @@oth@@ Kou, Liangzhi @@oth@@ Zhong, Jianxin @@oth@@ Tang, Chao @@oth@@ Li, Jin @@oth@@ Peng, Jie @@oth@@ |
| publishDateDaySort_date |
2016-01-01T00:00:00Z |
| hierarchy_top_id |
129079030 |
| dewey-sort |
3530 |
| id |
OLC1970859555 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1970859555</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714180756.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160212s2016 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1063/1.4940160</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160212</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1970859555</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1970859555</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lu, Donglin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrostatic properties of two-dimensional WSe2 nanostructures</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering.</subfield></datafield><datafield tag="540" ind1=" " ind2=" "><subfield code="a">Nutzungsrecht: © AIP Publishing LLC</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hao, Guolin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kou, Liangzhi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhong, Jianxin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tang, Chao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Jin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Peng, Jie</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of applied physics</subfield><subfield code="d">Melville, NY : AIP, 1937</subfield><subfield code="g">119(2016), 3, Seite 35301</subfield><subfield code="w">(DE-627)129079030</subfield><subfield code="w">(DE-600)3112-4</subfield><subfield code="w">(DE-576)014411652</subfield><subfield code="x">0021-8979</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:119</subfield><subfield code="g">year:2016</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:35301</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1063/1.4940160</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://dx.doi.org/10.1063/1.4940160</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_59</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">119</subfield><subfield code="j">2016</subfield><subfield code="e">3</subfield><subfield code="h">35301</subfield></datafield></record></collection>
|
| author |
Lu, Donglin |
| spellingShingle |
Lu, Donglin ddc 530 Electrostatic properties of two-dimensional WSe2 nanostructures |
| authorStr |
Lu, Donglin |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129079030 |
| format |
Article |
| dewey-ones |
530 - Physics |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0021-8979 |
| topic_title |
530 DNB Electrostatic properties of two-dimensional WSe2 nanostructures |
| topic |
ddc 530 |
| topic_unstemmed |
ddc 530 |
| topic_browse |
ddc 530 |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| author2_variant |
g h gh l k lk j z jz c t ct j l jl j p jp |
| hierarchy_parent_title |
Journal of applied physics |
| hierarchy_parent_id |
129079030 |
| dewey-tens |
530 - Physics |
| hierarchy_top_title |
Journal of applied physics |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 |
| title |
Electrostatic properties of two-dimensional WSe2 nanostructures |
| ctrlnum |
(DE-627)OLC1970859555 (DE-599)GBVOLC1970859555 (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr |
| title_full |
Electrostatic properties of two-dimensional WSe2 nanostructures |
| author_sort |
Lu, Donglin |
| journal |
Journal of applied physics |
| journalStr |
Journal of applied physics |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science |
| recordtype |
marc |
| publishDateSort |
2016 |
| contenttype_str_mv |
txt |
| container_start_page |
35301 |
| author_browse |
Lu, Donglin |
| container_volume |
119 |
| class |
530 DNB |
| format_se |
Aufsätze |
| author-letter |
Lu, Donglin |
| doi_str_mv |
10.1063/1.4940160 |
| dewey-full |
530 |
| title_sort |
electrostatic properties of two-dimensional wse2 nanostructures |
| title_auth |
Electrostatic properties of two-dimensional WSe2 nanostructures |
| abstract |
Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. |
| abstractGer |
Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. |
| abstract_unstemmed |
Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 |
| container_issue |
3 |
| title_short |
Electrostatic properties of two-dimensional WSe2 nanostructures |
| url |
http://dx.doi.org/10.1063/1.4940160 |
| remote_bool |
false |
| author2 |
Hao, Guolin Kou, Liangzhi Zhong, Jianxin Tang, Chao Li, Jin Peng, Jie |
| author2Str |
Hao, Guolin Kou, Liangzhi Zhong, Jianxin Tang, Chao Li, Jin Peng, Jie |
| ppnlink |
129079030 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth oth |
| doi_str |
10.1063/1.4940160 |
| up_date |
2024-07-03T17:09:46.427Z |
| _version_ |
1803578597895569408 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1970859555</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714180756.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160212s2016 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1063/1.4940160</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160212</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1970859555</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1970859555</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lu, Donglin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrostatic properties of two-dimensional WSe2 nanostructures</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering.</subfield></datafield><datafield tag="540" ind1=" " ind2=" "><subfield code="a">Nutzungsrecht: © AIP Publishing LLC</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hao, Guolin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kou, Liangzhi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhong, Jianxin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tang, Chao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Jin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Peng, Jie</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of applied physics</subfield><subfield code="d">Melville, NY : AIP, 1937</subfield><subfield code="g">119(2016), 3, Seite 35301</subfield><subfield code="w">(DE-627)129079030</subfield><subfield code="w">(DE-600)3112-4</subfield><subfield code="w">(DE-576)014411652</subfield><subfield code="x">0021-8979</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:119</subfield><subfield code="g">year:2016</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:35301</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1063/1.4940160</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://dx.doi.org/10.1063/1.4940160</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_59</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2279</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4319</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">119</subfield><subfield code="j">2016</subfield><subfield code="e">3</subfield><subfield code="h">35301</subfield></datafield></record></collection>
|
| score |
7.399721 |