Electrostatic properties of two-dimensional WSe2 nanostructures
Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanopla...
Ausführliche Beschreibung
Autor*in: |
Lu, Donglin [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2016 |
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Rechteinformationen: |
Nutzungsrecht: © AIP Publishing LLC |
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Übergeordnetes Werk: |
Enthalten in: Journal of applied physics - Melville, NY : AIP, 1937, 119(2016), 3, Seite 35301 |
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Übergeordnetes Werk: |
volume:119 ; year:2016 ; number:3 ; pages:35301 |
Links: |
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DOI / URN: |
10.1063/1.4940160 |
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OLC1970859555 |
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10.1063/1.4940160 doi PQ20160212 (DE-627)OLC1970859555 (DE-599)GBVOLC1970859555 (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr DE-627 ger DE-627 rakwb eng 530 DNB Lu, Donglin verfasserin aut Electrostatic properties of two-dimensional WSe2 nanostructures 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. Nutzungsrecht: © AIP Publishing LLC Hao, Guolin oth Kou, Liangzhi oth Zhong, Jianxin oth Tang, Chao oth Li, Jin oth Peng, Jie oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 119(2016), 3, Seite 35301 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:119 year:2016 number:3 pages:35301 http://dx.doi.org/10.1063/1.4940160 Volltext http://dx.doi.org/10.1063/1.4940160 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 119 2016 3 35301 |
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10.1063/1.4940160 doi PQ20160212 (DE-627)OLC1970859555 (DE-599)GBVOLC1970859555 (PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40 (KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr DE-627 ger DE-627 rakwb eng 530 DNB Lu, Donglin verfasserin aut Electrostatic properties of two-dimensional WSe2 nanostructures 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. Nutzungsrecht: © AIP Publishing LLC Hao, Guolin oth Kou, Liangzhi oth Zhong, Jianxin oth Tang, Chao oth Li, Jin oth Peng, Jie oth Enthalten in Journal of applied physics Melville, NY : AIP, 1937 119(2016), 3, Seite 35301 (DE-627)129079030 (DE-600)3112-4 (DE-576)014411652 0021-8979 nnns volume:119 year:2016 number:3 pages:35301 http://dx.doi.org/10.1063/1.4940160 Volltext http://dx.doi.org/10.1063/1.4940160 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_59 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2279 GBV_ILN_4319 AR 119 2016 3 35301 |
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Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. |
abstractGer |
Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. |
abstract_unstemmed |
Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. The electrostatic property investigation of WSe2 nanostructures is essential for device application. Here, the interlayer screening effects of WSe2 nanoplates with different thicknesses were investigated by measuring surface potential employing Kelvin probe force microscopy. Simultaneously, charges can be injected into WSe2 nanoplate by means of conducting atomic force microscopy to tune the electrostatic properties of WSe2 nanostructures. Our experimental results have some important implications for improving performance of WSe2-based optoelectronic devices through interface or surface engineering. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1970859555</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714180756.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160212s2016 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1063/1.4940160</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160212</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1970859555</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1970859555</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c690-6847c0bb1bd4ef2522c8d6d220586e199d9bb01bf777ba2a4b5252a34c8152f40</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0076740920160000119000335301electrostaticpropertiesoftwodimensionalwse2nanostr</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lu, Donglin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrostatic properties of two-dimensional WSe2 nanostructures</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Recently, two-dimensional transition metal dichalcogenides have intrigued much attention due to their promising applications in optoelectronics. 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