Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components
A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characte...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kim, Hyewon [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on microwave theory and techniques - New York, NY : IEEE, 1963, 64(2016), 3, Seite 931-938 |
|---|---|
| Übergeordnetes Werk: |
volume:64 ; year:2016 ; number:3 ; pages:931-938 |
| Links: |
|---|
| DOI / URN: |
10.1109/TMTT.2016.2519018 |
|---|
| Katalog-ID: |
OLC1973573725 |
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| 245 | 1 | 0 | |a Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components |
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| 520 | |a A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. | ||
| 650 | 4 | |a interconnect | |
| 650 | 4 | |a measurements | |
| 650 | 4 | |a De-embedding | |
| 650 | 4 | |a Impedance | |
| 650 | 4 | |a Scattering parameters | |
| 650 | 4 | |a transmission line (TL) | |
| 650 | 4 | |a Transmission line measurements | |
| 650 | 4 | |a Integrated circuit modeling | |
| 650 | 4 | |a Substrates | |
| 650 | 4 | |a Calibration | |
| 650 | 4 | |a Dielectrics | |
| 700 | 1 | |a Kim, Joonhyun |4 oth | |
| 700 | 1 | |a Eo, Yungseon |4 oth | |
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10.1109/TMTT.2016.2519018 doi PQ20160430 (DE-627)OLC1973573725 (DE-599)GBVOLC1973573725 (PRQ)c955-95f01ec8e946bebe6dd37925d8614331258c1a26da1761b0f58a30789506bc2d0 (KEY)0017514520160000064000300931broadbandthinfilmtransmissionlinecharacterizationf DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Kim, Hyewon verfasserin aut Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. interconnect measurements De-embedding Impedance Scattering parameters transmission line (TL) Transmission line measurements Integrated circuit modeling Substrates Calibration Dielectrics Kim, Joonhyun oth Eo, Yungseon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 3, Seite 931-938 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:3 pages:931-938 http://dx.doi.org/10.1109/TMTT.2016.2519018 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7394938 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 3 931-938 |
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10.1109/TMTT.2016.2519018 doi PQ20160430 (DE-627)OLC1973573725 (DE-599)GBVOLC1973573725 (PRQ)c955-95f01ec8e946bebe6dd37925d8614331258c1a26da1761b0f58a30789506bc2d0 (KEY)0017514520160000064000300931broadbandthinfilmtransmissionlinecharacterizationf DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Kim, Hyewon verfasserin aut Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. interconnect measurements De-embedding Impedance Scattering parameters transmission line (TL) Transmission line measurements Integrated circuit modeling Substrates Calibration Dielectrics Kim, Joonhyun oth Eo, Yungseon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 3, Seite 931-938 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:3 pages:931-938 http://dx.doi.org/10.1109/TMTT.2016.2519018 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7394938 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 3 931-938 |
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10.1109/TMTT.2016.2519018 doi PQ20160430 (DE-627)OLC1973573725 (DE-599)GBVOLC1973573725 (PRQ)c955-95f01ec8e946bebe6dd37925d8614331258c1a26da1761b0f58a30789506bc2d0 (KEY)0017514520160000064000300931broadbandthinfilmtransmissionlinecharacterizationf DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Kim, Hyewon verfasserin aut Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. interconnect measurements De-embedding Impedance Scattering parameters transmission line (TL) Transmission line measurements Integrated circuit modeling Substrates Calibration Dielectrics Kim, Joonhyun oth Eo, Yungseon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 3, Seite 931-938 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:3 pages:931-938 http://dx.doi.org/10.1109/TMTT.2016.2519018 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7394938 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 3 931-938 |
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10.1109/TMTT.2016.2519018 doi PQ20160430 (DE-627)OLC1973573725 (DE-599)GBVOLC1973573725 (PRQ)c955-95f01ec8e946bebe6dd37925d8614331258c1a26da1761b0f58a30789506bc2d0 (KEY)0017514520160000064000300931broadbandthinfilmtransmissionlinecharacterizationf DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Kim, Hyewon verfasserin aut Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. interconnect measurements De-embedding Impedance Scattering parameters transmission line (TL) Transmission line measurements Integrated circuit modeling Substrates Calibration Dielectrics Kim, Joonhyun oth Eo, Yungseon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 3, Seite 931-938 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:3 pages:931-938 http://dx.doi.org/10.1109/TMTT.2016.2519018 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7394938 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 3 931-938 |
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10.1109/TMTT.2016.2519018 doi PQ20160430 (DE-627)OLC1973573725 (DE-599)GBVOLC1973573725 (PRQ)c955-95f01ec8e946bebe6dd37925d8614331258c1a26da1761b0f58a30789506bc2d0 (KEY)0017514520160000064000300931broadbandthinfilmtransmissionlinecharacterizationf DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Kim, Hyewon verfasserin aut Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. interconnect measurements De-embedding Impedance Scattering parameters transmission line (TL) Transmission line measurements Integrated circuit modeling Substrates Calibration Dielectrics Kim, Joonhyun oth Eo, Yungseon oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 3, Seite 931-938 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:3 pages:931-938 http://dx.doi.org/10.1109/TMTT.2016.2519018 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7394938 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 3 931-938 |
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Kim, Hyewon |
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620 DNB 53.00 bkl Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components interconnect measurements De-embedding Impedance Scattering parameters transmission line (TL) Transmission line measurements Integrated circuit modeling Substrates Calibration Dielectrics |
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Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components |
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Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components |
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Kim, Hyewon |
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broadband thin-film transmission-line characterization for accurate high-frequency measurements of on-wafer components |
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Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components |
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A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. |
| abstractGer |
A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. |
| abstract_unstemmed |
A high-frequency fine-pitched (i.e., very narrow line width) thin-film transmission line (TL) characterization technique is presented. A new dielectric permittivity determination technique for thin-film TL structures is developed. Multi-layered mixed dielectric materials are then accurately characterized in a broad frequency band, to be followed by the TL characterization. For experiments, various lengths of TL and extra patterns were designed and fabricated by using both a {\hbox{0.18-}}\mu{\hbox{m}} SK Hynix CMOS process and {\hbox{0.13-}}\mu{\hbox{m}} Samsung CMOS process. S-parameters for the test patterns were measured by using a vector network analyzer from 10 MHz to 50 GHz. It is shown that not only the inherent de-embedding problems associated with wafer-level high-frequency characterizations can be conveniently eliminated, but also the frequency-variant characteristic impedance of a thin-film TL can be readily determined using the proposed technique. It can be exploited for accurate high-frequency wafer-level component characterizations including miniaturized transistors, frequency-variant interconnect lines, and other circuit components. |
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Broadband Thin-Film Transmission-Line Characterization for Accurate High-Frequency Measurements of On-Wafer Components |
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http://dx.doi.org/10.1109/TMTT.2016.2519018 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7394938 |
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