Volatile and Non-volatile Switching in Cu-SiO2 Programmable Metallization Cells
Autor*in: |
Chen, Wenhao [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
Erschienen: |
2016 |
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Übergeordnetes Werk: |
Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, (2016), Seite 1-1 |
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Übergeordnetes Werk: |
year:2016 ; pages:1-1 |
Links: |
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DOI / URN: |
10.1109/LED.2016.2540361 |
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OLC1973909529 |
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10.1109/LED.2016.2540361 doi PQ20160430 (DE-627)OLC1973909529 (DE-599)GBVOLC1973909529 (PRQ)crossref_primary_10_1109_LED_2016_25403610 (KEY)0101063820160000000000000001volatileandnonvolatileswitchingincusio2programmabl DE-627 ger DE-627 rakwb eng 620 DNB Chen, Wenhao verfasserin aut Volatile and Non-volatile Switching in Cu-SiO2 Programmable Metallization Cells 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Barnaby, Hugh J oth Kozicki, Michael N oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 (2016), Seite 1-1 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns year:2016 pages:1-1 http://dx.doi.org/10.1109/LED.2016.2540361 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 AR 2016 1-1 |
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10.1109/LED.2016.2540361 doi PQ20160430 (DE-627)OLC1973909529 (DE-599)GBVOLC1973909529 (PRQ)crossref_primary_10_1109_LED_2016_25403610 (KEY)0101063820160000000000000001volatileandnonvolatileswitchingincusio2programmabl DE-627 ger DE-627 rakwb eng 620 DNB Chen, Wenhao verfasserin aut Volatile and Non-volatile Switching in Cu-SiO2 Programmable Metallization Cells 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Barnaby, Hugh J oth Kozicki, Michael N oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 (2016), Seite 1-1 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns year:2016 pages:1-1 http://dx.doi.org/10.1109/LED.2016.2540361 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 AR 2016 1-1 |
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