Impacts of Co doping on ZnO transparent switching memory device characteristics

The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstra...
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Autor*in:	Simanjuntak, Firman Mangasa [verfasserIn] Prasad, Om Kumar Panda, Debashis Lin, Chun-An Tsai, Tsung-Ling Wei, Kung-Hwa Tseng, Tseung-Yuen

Format:	Artikel
Sprache:	Englisch

Erschienen:	2016

Rechteinformationen:	Nutzungsrecht: © Author(s)

Übergeordnetes Werk:	Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 108(2016), 18
Übergeordnetes Werk:	volume:108 ; year:2016 ; number:18

Links:	Volltext Link aufrufen

DOI / URN:	10.1063/1.4948598

Katalog-ID:	OLC1974605329

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520			\|a The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.
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allfields	10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18
spelling	10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18
allfields_unstemmed	10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18
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allfieldsSound	10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18
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title_sort	impacts of co doping on zno transparent switching memory device characteristics
title_auth	Impacts of Co doping on ZnO transparent switching memory device characteristics
abstract	The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.
abstractGer	The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.
abstract_unstemmed	The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated.
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container_issue	18
title_short	Impacts of Co doping on ZnO transparent switching memory device characteristics
url	http://dx.doi.org/10.1063/1.4948598
remote_bool	false
author2	Prasad, Om Kumar Panda, Debashis Lin, Chun-An Tsai, Tsung-Ling Wei, Kung-Hwa Tseng, Tseung-Yuen
author2Str	Prasad, Om Kumar Panda, Debashis Lin, Chun-An Tsai, Tsung-Ling Wei, Kung-Hwa Tseng, Tseung-Yuen
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doi_str	10.1063/1.4948598
up_date	2024-07-04T04:40:53.678Z
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