Impacts of Co doping on ZnO transparent switching memory device characteristics
The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstra...
Ausführliche Beschreibung
Autor*in: |
Simanjuntak, Firman Mangasa [verfasserIn] |
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Format: |
Artikel |
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Sprache: |
Englisch |
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2016 |
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Rechteinformationen: |
Nutzungsrecht: © Author(s) |
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Übergeordnetes Werk: |
Enthalten in: Applied physics letters - Melville, NY : AIP, 1962, 108(2016), 18 |
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Übergeordnetes Werk: |
volume:108 ; year:2016 ; number:18 |
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DOI / URN: |
10.1063/1.4948598 |
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OLC1974605329 |
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520 | |a The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. | ||
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10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18 |
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10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18 |
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10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18 |
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10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18 |
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10.1063/1.4948598 doi PQ20160610 (DE-627)OLC1974605329 (DE-599)GBVOLC1974605329 (PRQ)c698-1fa3282e385920be6ed3419c7d9142367547295ffee470aba9100156733b3b0 (KEY)0013165220160000108001800000impactsofcodopingonznotransparentswitchingmemoryde DE-627 ger DE-627 rakwb eng 530 DNB Simanjuntak, Firman Mangasa verfasserin aut Impacts of Co doping on ZnO transparent switching memory device characteristics 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Nutzungsrecht: © Author(s) Prasad, Om Kumar oth Panda, Debashis oth Lin, Chun-An oth Tsai, Tsung-Ling oth Wei, Kung-Hwa oth Tseng, Tseung-Yuen oth Enthalten in Applied physics letters Melville, NY : AIP, 1962 108(2016), 18 (DE-627)12951568X (DE-600)211245-0 (DE-576)014926210 0003-6951 nnns volume:108 year:2016 number:18 http://dx.doi.org/10.1063/1.4948598 Volltext http://dx.doi.org/10.1063/1.4948598 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-PHY GBV_ILN_21 GBV_ILN_32 GBV_ILN_55 GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2192 GBV_ILN_2279 GBV_ILN_4319 AR 108 2016 18 |
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The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. |
abstractGer |
The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. |
abstract_unstemmed |
The resistive switching characteristics of indium tin oxide (ITO)/Zn1−xCoxO/ITO transparent resistive memory devices were investigated. An appropriate amount of cobalt dopant in ZnO resistive layer demonstrated sufficient memory window and switching stability. In contrast, pure ZnO devices demonstrated a poor memory window, and using an excessive dopant concentration led to switching instability. To achieve suitable memory performance, relying only on controlling defect concentrations is insufficient; the grain growth orientation of the resistive layer must also be considered. Stable endurance with an ON/OFF ratio of more than one order of magnitude during 5000 cycles confirmed that the Co-doped ZnO device is a suitable candidate for resistive random access memory application. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. |
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container_issue |
18 |
title_short |
Impacts of Co doping on ZnO transparent switching memory device characteristics |
url |
http://dx.doi.org/10.1063/1.4948598 |
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author2 |
Prasad, Om Kumar Panda, Debashis Lin, Chun-An Tsai, Tsung-Ling Wei, Kung-Hwa Tseng, Tseung-Yuen |
author2Str |
Prasad, Om Kumar Panda, Debashis Lin, Chun-An Tsai, Tsung-Ling Wei, Kung-Hwa Tseng, Tseung-Yuen |
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doi_str |
10.1063/1.4948598 |
up_date |
2024-07-04T04:40:53.678Z |
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