Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer
GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain h...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zuo, Peng [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Rechteinformationen: |
Nutzungsrecht: © Springer Science+Business Media New York 2016 |
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| Schlagwörter: |
Computer Communication Networks |
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| Übergeordnetes Werk: |
Enthalten in: Optical and quantum electronics - Dordrecht : Kluwer, 1975, 48(2016), 5, Seite 1-7 |
|---|---|
| Übergeordnetes Werk: |
volume:48 ; year:2016 ; number:5 ; pages:1-7 |
| Links: |
|---|
| DOI / URN: |
10.1007/s11082-016-0551-9 |
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| Katalog-ID: |
OLC1974621596 |
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| 520 | |a GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain high fill factor. The light output power and electroluminescence intensity of the LEDs with textured SiO2 surface show better results than the conventional LEDs without SiO2 layer. At an injection current of 20 mA, the enhancement of the light output power is about 64 %. Moreover, the reverse leakage current, under a reverse bias of −5 V, is obviously reduced in contrast to the conventional LEDs. The method of texturing the passivation layers is proved to be an alternative method to improve both the optical and electrical performances of GaN-based LEDs. | ||
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| 650 | 4 | |a Light emitting diodes (LEDs) | |
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Computer Communication Networks | |
| 650 | 4 | |a Optics, Optoelectronics, Plasmonics and Optical Devices | |
| 650 | 4 | |a Nano truncated cones | |
| 650 | 4 | |a Surface texture | |
| 650 | 4 | |a Electrical Engineering | |
| 650 | 4 | |a Light extraction efficiency | |
| 650 | 4 | |a Reverse leakage current | |
| 650 | 4 | |a Characterization and Evaluation of Materials | |
| 700 | 1 | |a Zhao, Bin |4 oth | |
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10.1007/s11082-016-0551-9 doi PQ20160719 (DE-627)OLC1974621596 (DE-599)GBVOLC1974621596 (PRQ)s601-faa89cfeb484e6619aea713b7c0457938ae03eb182045b8ae2129a75c9decfdc0 (KEY)0014969120160000048000500001improvedopticalandelectricalperformancesofganbased DE-627 ger DE-627 rakwb eng 500 620 DE-600 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Zuo, Peng verfasserin aut Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain high fill factor. The light output power and electroluminescence intensity of the LEDs with textured SiO2 surface show better results than the conventional LEDs without SiO2 layer. At an injection current of 20 mA, the enhancement of the light output power is about 64 %. Moreover, the reverse leakage current, under a reverse bias of −5 V, is obviously reduced in contrast to the conventional LEDs. The method of texturing the passivation layers is proved to be an alternative method to improve both the optical and electrical performances of GaN-based LEDs. Nutzungsrecht: © Springer Science+Business Media New York 2016 Light emitting diodes (LEDs) Physics Computer Communication Networks Optics, Optoelectronics, Plasmonics and Optical Devices Nano truncated cones Surface texture Electrical Engineering Light extraction efficiency Reverse leakage current Characterization and Evaluation of Materials Zhao, Bin oth Yan, Shen oth Yue, Gen oth Yang, Haojun oth Li, Yangfeng oth Wu, Haiyan oth Jiang, Yang oth Jia, Haiqiang oth Zhou, Junming oth Chen, Hong oth Enthalten in Optical and quantum electronics Dordrecht : Kluwer, 1975 48(2016), 5, Seite 1-7 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:48 year:2016 number:5 pages:1-7 http://dx.doi.org/10.1007/s11082-016-0551-9 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 33.38 AVZ 33.18 AVZ 33.23 AVZ 53.54 AVZ 52.88 AVZ 33.72 AVZ AR 48 2016 5 1-7 |
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10.1007/s11082-016-0551-9 doi PQ20160719 (DE-627)OLC1974621596 (DE-599)GBVOLC1974621596 (PRQ)s601-faa89cfeb484e6619aea713b7c0457938ae03eb182045b8ae2129a75c9decfdc0 (KEY)0014969120160000048000500001improvedopticalandelectricalperformancesofganbased DE-627 ger DE-627 rakwb eng 500 620 DE-600 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Zuo, Peng verfasserin aut Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain high fill factor. The light output power and electroluminescence intensity of the LEDs with textured SiO2 surface show better results than the conventional LEDs without SiO2 layer. At an injection current of 20 mA, the enhancement of the light output power is about 64 %. Moreover, the reverse leakage current, under a reverse bias of −5 V, is obviously reduced in contrast to the conventional LEDs. The method of texturing the passivation layers is proved to be an alternative method to improve both the optical and electrical performances of GaN-based LEDs. Nutzungsrecht: © Springer Science+Business Media New York 2016 Light emitting diodes (LEDs) Physics Computer Communication Networks Optics, Optoelectronics, Plasmonics and Optical Devices Nano truncated cones Surface texture Electrical Engineering Light extraction efficiency Reverse leakage current Characterization and Evaluation of Materials Zhao, Bin oth Yan, Shen oth Yue, Gen oth Yang, Haojun oth Li, Yangfeng oth Wu, Haiyan oth Jiang, Yang oth Jia, Haiqiang oth Zhou, Junming oth Chen, Hong oth Enthalten in Optical and quantum electronics Dordrecht : Kluwer, 1975 48(2016), 5, Seite 1-7 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:48 year:2016 number:5 pages:1-7 http://dx.doi.org/10.1007/s11082-016-0551-9 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 33.38 AVZ 33.18 AVZ 33.23 AVZ 53.54 AVZ 52.88 AVZ 33.72 AVZ AR 48 2016 5 1-7 |
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10.1007/s11082-016-0551-9 doi PQ20160719 (DE-627)OLC1974621596 (DE-599)GBVOLC1974621596 (PRQ)s601-faa89cfeb484e6619aea713b7c0457938ae03eb182045b8ae2129a75c9decfdc0 (KEY)0014969120160000048000500001improvedopticalandelectricalperformancesofganbased DE-627 ger DE-627 rakwb eng 500 620 DE-600 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Zuo, Peng verfasserin aut Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain high fill factor. The light output power and electroluminescence intensity of the LEDs with textured SiO2 surface show better results than the conventional LEDs without SiO2 layer. At an injection current of 20 mA, the enhancement of the light output power is about 64 %. Moreover, the reverse leakage current, under a reverse bias of −5 V, is obviously reduced in contrast to the conventional LEDs. The method of texturing the passivation layers is proved to be an alternative method to improve both the optical and electrical performances of GaN-based LEDs. Nutzungsrecht: © Springer Science+Business Media New York 2016 Light emitting diodes (LEDs) Physics Computer Communication Networks Optics, Optoelectronics, Plasmonics and Optical Devices Nano truncated cones Surface texture Electrical Engineering Light extraction efficiency Reverse leakage current Characterization and Evaluation of Materials Zhao, Bin oth Yan, Shen oth Yue, Gen oth Yang, Haojun oth Li, Yangfeng oth Wu, Haiyan oth Jiang, Yang oth Jia, Haiqiang oth Zhou, Junming oth Chen, Hong oth Enthalten in Optical and quantum electronics Dordrecht : Kluwer, 1975 48(2016), 5, Seite 1-7 (DE-627)129419540 (DE-600)189950-8 (DE-576)014796139 0306-8919 nnns volume:48 year:2016 number:5 pages:1-7 http://dx.doi.org/10.1007/s11082-016-0551-9 Volltext GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_22 GBV_ILN_70 GBV_ILN_150 33.38 AVZ 33.18 AVZ 33.23 AVZ 53.54 AVZ 52.88 AVZ 33.72 AVZ AR 48 2016 5 1-7 |
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Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer |
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GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain high fill factor. The light output power and electroluminescence intensity of the LEDs with textured SiO2 surface show better results than the conventional LEDs without SiO2 layer. At an injection current of 20 mA, the enhancement of the light output power is about 64 %. Moreover, the reverse leakage current, under a reverse bias of −5 V, is obviously reduced in contrast to the conventional LEDs. The method of texturing the passivation layers is proved to be an alternative method to improve both the optical and electrical performances of GaN-based LEDs. |
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GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain high fill factor. The light output power and electroluminescence intensity of the LEDs with textured SiO2 surface show better results than the conventional LEDs without SiO2 layer. At an injection current of 20 mA, the enhancement of the light output power is about 64 %. Moreover, the reverse leakage current, under a reverse bias of −5 V, is obviously reduced in contrast to the conventional LEDs. The method of texturing the passivation layers is proved to be an alternative method to improve both the optical and electrical performances of GaN-based LEDs. |
| abstract_unstemmed |
GaN-based light emitting diodes (LEDs) with nano truncated cone SiO2 passivation layer via laser interference lithography and inductively coupled plasma dry etching technology were fabricated. The sidewall profile of the nano truncated cones was optimized by adjusting the etching process to obtain high fill factor. The light output power and electroluminescence intensity of the LEDs with textured SiO2 surface show better results than the conventional LEDs without SiO2 layer. At an injection current of 20 mA, the enhancement of the light output power is about 64 %. Moreover, the reverse leakage current, under a reverse bias of −5 V, is obviously reduced in contrast to the conventional LEDs. The method of texturing the passivation layers is proved to be an alternative method to improve both the optical and electrical performances of GaN-based LEDs. |
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Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer |
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Zhao, Bin Yan, Shen Yue, Gen Yang, Haojun Li, Yangfeng Wu, Haiyan Jiang, Yang Jia, Haiqiang Zhou, Junming Chen, Hong |
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