Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices
The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Balatti, Simone [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2016 |
|---|
| Schlagwörter: |
random number genera- tion (RNG) resistive-switching memory (RRAM) |
|---|
| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on electron devices - New York, NY : IEEE, 1963, 63(2016), 5, Seite 2029-2035 |
|---|---|
| Übergeordnetes Werk: |
volume:63 ; year:2016 ; number:5 ; pages:2029-2035 |
| Links: |
|---|
| DOI / URN: |
10.1109/TED.2016.2537792 |
|---|
| Katalog-ID: |
OLC1975270312 |
|---|
| LEADER | 01000caa a2200265 4500 | ||
|---|---|---|---|
| 001 | OLC1975270312 | ||
| 003 | DE-627 | ||
| 005 | 20210716092719.0 | ||
| 007 | tu | ||
| 008 | 160609s2016 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1109/TED.2016.2537792 |2 doi | |
| 028 | 5 | 2 | |a PQ20160610 |
| 035 | |a (DE-627)OLC1975270312 | ||
| 035 | |a (DE-599)GBVOLC1975270312 | ||
| 035 | |a (PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40 | ||
| 035 | |a (KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 620 |q DNB |
| 100 | 1 | |a Balatti, Simone |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices |
| 264 | 1 | |c 2016 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 520 | |a The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. | ||
| 650 | 4 | |a Switching circuits | |
| 650 | 4 | |a random number genera- tion (RNG) | |
| 650 | 4 | |a resistive-switching memory (RRAM) | |
| 650 | 4 | |a Degradation | |
| 650 | 4 | |a Resistance | |
| 650 | 4 | |a Integrated circuits | |
| 650 | 4 | |a Switches | |
| 650 | 4 | |a Memory reliability | |
| 650 | 4 | |a Electrical resistance measurement | |
| 650 | 4 | |a Entropy | |
| 700 | 1 | |a Ambrogio, Stefano |4 oth | |
| 700 | 1 | |a Carboni, Roberto |4 oth | |
| 700 | 1 | |a Milo, Valerio |4 oth | |
| 700 | 1 | |a Wang, Zhongqiang |4 oth | |
| 700 | 1 | |a Calderoni, Alessandro |4 oth | |
| 700 | 1 | |a Ramaswamy, Nirmal |4 oth | |
| 700 | 1 | |a Ielmini, Daniele |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |t IEEE transactions on electron devices |d New York, NY : IEEE, 1963 |g 63(2016), 5, Seite 2029-2035 |w (DE-627)129602922 |w (DE-600)241634-7 |w (DE-576)015096734 |x 0018-9383 |7 nnns |
| 773 | 1 | 8 | |g volume:63 |g year:2016 |g number:5 |g pages:2029-2035 |
| 856 | 4 | 1 | |u http://dx.doi.org/10.1109/TED.2016.2537792 |3 Volltext |
| 856 | 4 | 2 | |u http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858 |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-MAT | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_4313 | ||
| 951 | |a AR | ||
| 952 | |d 63 |j 2016 |e 5 |h 2029-2035 | ||
| author_variant |
s b sb |
|---|---|
| matchkey_str |
article:00189383:2016----::hsclnisdeeainfadmubrwtculdei |
| hierarchy_sort_str |
2016 |
| publishDate |
2016 |
| allfields |
10.1109/TED.2016.2537792 doi PQ20160610 (DE-627)OLC1975270312 (DE-599)GBVOLC1975270312 (PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40 (KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl DE-627 ger DE-627 rakwb eng 620 DNB Balatti, Simone verfasserin aut Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. Switching circuits random number genera- tion (RNG) resistive-switching memory (RRAM) Degradation Resistance Integrated circuits Switches Memory reliability Electrical resistance measurement Entropy Ambrogio, Stefano oth Carboni, Roberto oth Milo, Valerio oth Wang, Zhongqiang oth Calderoni, Alessandro oth Ramaswamy, Nirmal oth Ielmini, Daniele oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 63(2016), 5, Seite 2029-2035 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:63 year:2016 number:5 pages:2029-2035 http://dx.doi.org/10.1109/TED.2016.2537792 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 AR 63 2016 5 2029-2035 |
| spelling |
10.1109/TED.2016.2537792 doi PQ20160610 (DE-627)OLC1975270312 (DE-599)GBVOLC1975270312 (PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40 (KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl DE-627 ger DE-627 rakwb eng 620 DNB Balatti, Simone verfasserin aut Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. Switching circuits random number genera- tion (RNG) resistive-switching memory (RRAM) Degradation Resistance Integrated circuits Switches Memory reliability Electrical resistance measurement Entropy Ambrogio, Stefano oth Carboni, Roberto oth Milo, Valerio oth Wang, Zhongqiang oth Calderoni, Alessandro oth Ramaswamy, Nirmal oth Ielmini, Daniele oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 63(2016), 5, Seite 2029-2035 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:63 year:2016 number:5 pages:2029-2035 http://dx.doi.org/10.1109/TED.2016.2537792 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 AR 63 2016 5 2029-2035 |
| allfields_unstemmed |
10.1109/TED.2016.2537792 doi PQ20160610 (DE-627)OLC1975270312 (DE-599)GBVOLC1975270312 (PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40 (KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl DE-627 ger DE-627 rakwb eng 620 DNB Balatti, Simone verfasserin aut Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. Switching circuits random number genera- tion (RNG) resistive-switching memory (RRAM) Degradation Resistance Integrated circuits Switches Memory reliability Electrical resistance measurement Entropy Ambrogio, Stefano oth Carboni, Roberto oth Milo, Valerio oth Wang, Zhongqiang oth Calderoni, Alessandro oth Ramaswamy, Nirmal oth Ielmini, Daniele oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 63(2016), 5, Seite 2029-2035 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:63 year:2016 number:5 pages:2029-2035 http://dx.doi.org/10.1109/TED.2016.2537792 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 AR 63 2016 5 2029-2035 |
| allfieldsGer |
10.1109/TED.2016.2537792 doi PQ20160610 (DE-627)OLC1975270312 (DE-599)GBVOLC1975270312 (PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40 (KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl DE-627 ger DE-627 rakwb eng 620 DNB Balatti, Simone verfasserin aut Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. Switching circuits random number genera- tion (RNG) resistive-switching memory (RRAM) Degradation Resistance Integrated circuits Switches Memory reliability Electrical resistance measurement Entropy Ambrogio, Stefano oth Carboni, Roberto oth Milo, Valerio oth Wang, Zhongqiang oth Calderoni, Alessandro oth Ramaswamy, Nirmal oth Ielmini, Daniele oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 63(2016), 5, Seite 2029-2035 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:63 year:2016 number:5 pages:2029-2035 http://dx.doi.org/10.1109/TED.2016.2537792 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 AR 63 2016 5 2029-2035 |
| allfieldsSound |
10.1109/TED.2016.2537792 doi PQ20160610 (DE-627)OLC1975270312 (DE-599)GBVOLC1975270312 (PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40 (KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl DE-627 ger DE-627 rakwb eng 620 DNB Balatti, Simone verfasserin aut Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. Switching circuits random number genera- tion (RNG) resistive-switching memory (RRAM) Degradation Resistance Integrated circuits Switches Memory reliability Electrical resistance measurement Entropy Ambrogio, Stefano oth Carboni, Roberto oth Milo, Valerio oth Wang, Zhongqiang oth Calderoni, Alessandro oth Ramaswamy, Nirmal oth Ielmini, Daniele oth Enthalten in IEEE transactions on electron devices New York, NY : IEEE, 1963 63(2016), 5, Seite 2029-2035 (DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 0018-9383 nnns volume:63 year:2016 number:5 pages:2029-2035 http://dx.doi.org/10.1109/TED.2016.2537792 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 AR 63 2016 5 2029-2035 |
| language |
English |
| source |
Enthalten in IEEE transactions on electron devices 63(2016), 5, Seite 2029-2035 volume:63 year:2016 number:5 pages:2029-2035 |
| sourceStr |
Enthalten in IEEE transactions on electron devices 63(2016), 5, Seite 2029-2035 volume:63 year:2016 number:5 pages:2029-2035 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Switching circuits random number genera- tion (RNG) resistive-switching memory (RRAM) Degradation Resistance Integrated circuits Switches Memory reliability Electrical resistance measurement Entropy |
| dewey-raw |
620 |
| isfreeaccess_bool |
false |
| container_title |
IEEE transactions on electron devices |
| authorswithroles_txt_mv |
Balatti, Simone @@aut@@ Ambrogio, Stefano @@oth@@ Carboni, Roberto @@oth@@ Milo, Valerio @@oth@@ Wang, Zhongqiang @@oth@@ Calderoni, Alessandro @@oth@@ Ramaswamy, Nirmal @@oth@@ Ielmini, Daniele @@oth@@ |
| publishDateDaySort_date |
2016-01-01T00:00:00Z |
| hierarchy_top_id |
129602922 |
| dewey-sort |
3620 |
| id |
OLC1975270312 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1975270312</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210716092719.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160609s2016 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TED.2016.2537792</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160610</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1975270312</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1975270312</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Balatti, Simone</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switching circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">random number genera- tion (RNG)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">resistive-switching memory (RRAM)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Degradation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switches</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Memory reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical resistance measurement</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Entropy</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ambrogio, Stefano</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carboni, Roberto</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Milo, Valerio</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Zhongqiang</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Calderoni, Alessandro</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ramaswamy, Nirmal</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ielmini, Daniele</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on electron devices</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">63(2016), 5, Seite 2029-2035</subfield><subfield code="w">(DE-627)129602922</subfield><subfield code="w">(DE-600)241634-7</subfield><subfield code="w">(DE-576)015096734</subfield><subfield code="x">0018-9383</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:63</subfield><subfield code="g">year:2016</subfield><subfield code="g">number:5</subfield><subfield code="g">pages:2029-2035</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TED.2016.2537792</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-MAT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">63</subfield><subfield code="j">2016</subfield><subfield code="e">5</subfield><subfield code="h">2029-2035</subfield></datafield></record></collection>
|
| author |
Balatti, Simone |
| spellingShingle |
Balatti, Simone ddc 620 misc Switching circuits misc random number genera- tion (RNG) misc resistive-switching memory (RRAM) misc Degradation misc Resistance misc Integrated circuits misc Switches misc Memory reliability misc Electrical resistance measurement misc Entropy Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices |
| authorStr |
Balatti, Simone |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129602922 |
| format |
Article |
| dewey-ones |
620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0018-9383 |
| topic_title |
620 DNB Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices Switching circuits random number genera- tion (RNG) resistive-switching memory (RRAM) Degradation Resistance Integrated circuits Switches Memory reliability Electrical resistance measurement Entropy |
| topic |
ddc 620 misc Switching circuits misc random number genera- tion (RNG) misc resistive-switching memory (RRAM) misc Degradation misc Resistance misc Integrated circuits misc Switches misc Memory reliability misc Electrical resistance measurement misc Entropy |
| topic_unstemmed |
ddc 620 misc Switching circuits misc random number genera- tion (RNG) misc resistive-switching memory (RRAM) misc Degradation misc Resistance misc Integrated circuits misc Switches misc Memory reliability misc Electrical resistance measurement misc Entropy |
| topic_browse |
ddc 620 misc Switching circuits misc random number genera- tion (RNG) misc resistive-switching memory (RRAM) misc Degradation misc Resistance misc Integrated circuits misc Switches misc Memory reliability misc Electrical resistance measurement misc Entropy |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| author2_variant |
s a sa r c rc v m vm z w zw a c ac n r nr d i di |
| hierarchy_parent_title |
IEEE transactions on electron devices |
| hierarchy_parent_id |
129602922 |
| dewey-tens |
620 - Engineering |
| hierarchy_top_title |
IEEE transactions on electron devices |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129602922 (DE-600)241634-7 (DE-576)015096734 |
| title |
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices |
| ctrlnum |
(DE-627)OLC1975270312 (DE-599)GBVOLC1975270312 (PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40 (KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl |
| title_full |
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices |
| author_sort |
Balatti, Simone |
| journal |
IEEE transactions on electron devices |
| journalStr |
IEEE transactions on electron devices |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2016 |
| contenttype_str_mv |
txt |
| container_start_page |
2029 |
| author_browse |
Balatti, Simone |
| container_volume |
63 |
| class |
620 DNB |
| format_se |
Aufsätze |
| author-letter |
Balatti, Simone |
| doi_str_mv |
10.1109/TED.2016.2537792 |
| dewey-full |
620 |
| title_sort |
physical unbiased generation of random numbers with coupled resistive switching devices |
| title_auth |
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices |
| abstract |
The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. |
| abstractGer |
The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. |
| abstract_unstemmed |
The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MAT GBV_ILN_70 GBV_ILN_2004 GBV_ILN_4313 |
| container_issue |
5 |
| title_short |
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices |
| url |
http://dx.doi.org/10.1109/TED.2016.2537792 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858 |
| remote_bool |
false |
| author2 |
Ambrogio, Stefano Carboni, Roberto Milo, Valerio Wang, Zhongqiang Calderoni, Alessandro Ramaswamy, Nirmal Ielmini, Daniele |
| author2Str |
Ambrogio, Stefano Carboni, Roberto Milo, Valerio Wang, Zhongqiang Calderoni, Alessandro Ramaswamy, Nirmal Ielmini, Daniele |
| ppnlink |
129602922 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth oth oth |
| doi_str |
10.1109/TED.2016.2537792 |
| up_date |
2024-07-04T06:10:23.836Z |
| _version_ |
1803627710474354688 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC1975270312</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210716092719.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">160609s2016 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TED.2016.2537792</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20160610</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC1975270312</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC1975270312</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)i829-8da36093fd08dc1c5bc3bee374de3bc7c028957967e7bcd0aa6d9554eb5703e40</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0079428720160000063000502029physicalunbiasedgenerationofrandomnumberswithcoupl</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Balatti, Simone</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The resistive-switching memory (RRAM) is currently under consideration for fast nonvolatile memory thanks to its relatively low cost and high performance. A key concern for RRAM reliability is stochastic switching, which impacts the operation of the digital memory due to distribution broadening. On the other hand, stochastic behaviors are enabling mechanisms for some computing tasks, such as physical unclonable function (PUF) and random number generation (RNG). Here, we present new circuit blocks for physical RNG, based on the coupling of two RRAM devices. The two-resistance scheme allows to overcome the need of probability tracking, where the operation voltage must be tuned to adjust the generation probabilities of 0 and 1. Probability tests are proved successful for one of the three proposed schemes.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switching circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">random number genera- tion (RNG)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">resistive-switching memory (RRAM)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Degradation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switches</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Memory reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical resistance measurement</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Entropy</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ambrogio, Stefano</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carboni, Roberto</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Milo, Valerio</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Zhongqiang</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Calderoni, Alessandro</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ramaswamy, Nirmal</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ielmini, Daniele</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on electron devices</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">63(2016), 5, Seite 2029-2035</subfield><subfield code="w">(DE-627)129602922</subfield><subfield code="w">(DE-600)241634-7</subfield><subfield code="w">(DE-576)015096734</subfield><subfield code="x">0018-9383</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:63</subfield><subfield code="g">year:2016</subfield><subfield code="g">number:5</subfield><subfield code="g">pages:2029-2035</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TED.2016.2537792</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7438858</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-MAT</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">63</subfield><subfield code="j">2016</subfield><subfield code="e">5</subfield><subfield code="h">2029-2035</subfield></datafield></record></collection>
|
| score |
7.4022093 |