High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal
This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an ope...
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Gespeichert in:
| Autor*in: |
Hung, Yung-Jr [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
complementary metal-oxide-semiconductor (CMOS) |
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| Übergeordnetes Werk: |
Enthalten in: IEEE electron device letters - New York, NY : IEEE, 1980, 37(2016), 6, Seite 754-757 |
|---|---|
| Übergeordnetes Werk: |
volume:37 ; year:2016 ; number:6 ; pages:754-757 |
| Links: |
|---|
| DOI / URN: |
10.1109/LED.2016.2550496 |
|---|
| Katalog-ID: |
OLC1977841864 |
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| 520 | |a This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. | ||
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| 650 | 4 | |a localized substrate removal | |
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10.1109/LED.2016.2550496 doi PQ20160719 (DE-627)OLC1977841864 (DE-599)GBVOLC1977841864 (PRQ)i825-33ba52116c4e6bddf6ced9cf16abcaf109dbe2c27cca09e8e168f45109f560ba0 (KEY)0101063820160000037000600754highvoltagegenerationincmosphotovoltaicdevicesbylo DE-627 ger DE-627 rakwb eng 620 DNB Hung, Yung-Jr verfasserin aut High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. Micromechanical devices localized substrate removal Silicon Temperature measurement complementary metal-oxide-semiconductor (CMOS) Short-circuit currents Substrates CMOS integrated circuits micro-electromechanical systems (MEMS) process System-on-chip backside-illuminated photovoltaic device Cai, Meng-Syuan oth Su, Hsiu-Wei oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 37(2016), 6, Seite 754-757 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:37 year:2016 number:6 pages:754-757 http://dx.doi.org/10.1109/LED.2016.2550496 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7448853 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 AR 37 2016 6 754-757 |
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10.1109/LED.2016.2550496 doi PQ20160719 (DE-627)OLC1977841864 (DE-599)GBVOLC1977841864 (PRQ)i825-33ba52116c4e6bddf6ced9cf16abcaf109dbe2c27cca09e8e168f45109f560ba0 (KEY)0101063820160000037000600754highvoltagegenerationincmosphotovoltaicdevicesbylo DE-627 ger DE-627 rakwb eng 620 DNB Hung, Yung-Jr verfasserin aut High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. Micromechanical devices localized substrate removal Silicon Temperature measurement complementary metal-oxide-semiconductor (CMOS) Short-circuit currents Substrates CMOS integrated circuits micro-electromechanical systems (MEMS) process System-on-chip backside-illuminated photovoltaic device Cai, Meng-Syuan oth Su, Hsiu-Wei oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 37(2016), 6, Seite 754-757 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:37 year:2016 number:6 pages:754-757 http://dx.doi.org/10.1109/LED.2016.2550496 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7448853 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 AR 37 2016 6 754-757 |
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10.1109/LED.2016.2550496 doi PQ20160719 (DE-627)OLC1977841864 (DE-599)GBVOLC1977841864 (PRQ)i825-33ba52116c4e6bddf6ced9cf16abcaf109dbe2c27cca09e8e168f45109f560ba0 (KEY)0101063820160000037000600754highvoltagegenerationincmosphotovoltaicdevicesbylo DE-627 ger DE-627 rakwb eng 620 DNB Hung, Yung-Jr verfasserin aut High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. Micromechanical devices localized substrate removal Silicon Temperature measurement complementary metal-oxide-semiconductor (CMOS) Short-circuit currents Substrates CMOS integrated circuits micro-electromechanical systems (MEMS) process System-on-chip backside-illuminated photovoltaic device Cai, Meng-Syuan oth Su, Hsiu-Wei oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 37(2016), 6, Seite 754-757 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:37 year:2016 number:6 pages:754-757 http://dx.doi.org/10.1109/LED.2016.2550496 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7448853 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 AR 37 2016 6 754-757 |
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10.1109/LED.2016.2550496 doi PQ20160719 (DE-627)OLC1977841864 (DE-599)GBVOLC1977841864 (PRQ)i825-33ba52116c4e6bddf6ced9cf16abcaf109dbe2c27cca09e8e168f45109f560ba0 (KEY)0101063820160000037000600754highvoltagegenerationincmosphotovoltaicdevicesbylo DE-627 ger DE-627 rakwb eng 620 DNB Hung, Yung-Jr verfasserin aut High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. Micromechanical devices localized substrate removal Silicon Temperature measurement complementary metal-oxide-semiconductor (CMOS) Short-circuit currents Substrates CMOS integrated circuits micro-electromechanical systems (MEMS) process System-on-chip backside-illuminated photovoltaic device Cai, Meng-Syuan oth Su, Hsiu-Wei oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 37(2016), 6, Seite 754-757 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:37 year:2016 number:6 pages:754-757 http://dx.doi.org/10.1109/LED.2016.2550496 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7448853 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 AR 37 2016 6 754-757 |
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10.1109/LED.2016.2550496 doi PQ20160719 (DE-627)OLC1977841864 (DE-599)GBVOLC1977841864 (PRQ)i825-33ba52116c4e6bddf6ced9cf16abcaf109dbe2c27cca09e8e168f45109f560ba0 (KEY)0101063820160000037000600754highvoltagegenerationincmosphotovoltaicdevicesbylo DE-627 ger DE-627 rakwb eng 620 DNB Hung, Yung-Jr verfasserin aut High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. Micromechanical devices localized substrate removal Silicon Temperature measurement complementary metal-oxide-semiconductor (CMOS) Short-circuit currents Substrates CMOS integrated circuits micro-electromechanical systems (MEMS) process System-on-chip backside-illuminated photovoltaic device Cai, Meng-Syuan oth Su, Hsiu-Wei oth Enthalten in IEEE electron device letters New York, NY : IEEE, 1980 37(2016), 6, Seite 754-757 (DE-627)129618993 (DE-600)245158-X (DE-576)015122115 0193-8576 nnns volume:37 year:2016 number:6 pages:754-757 http://dx.doi.org/10.1109/LED.2016.2550496 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7448853 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_2061 GBV_ILN_4266 AR 37 2016 6 754-757 |
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High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal |
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High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal |
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high-voltage generation in cmos photovoltaic devices by localized substrate removal |
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High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal |
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This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. |
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This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. |
| abstract_unstemmed |
This letter reports a localized substrate removal (LSR) process for on-chip electrical isolation to promote the generation of high voltages by backside-illuminated complementary metal-oxide-semiconductor (CMOS) photovoltaic (PV) devices. The proposed four-cell-cascaded CMOS PV module provides an open-circuit voltage of 2.05 V, a short-circuit current of 2.6 mA, and a conversion efficiency of 11% under 40-mW input laser intensity. The proposed LSR approach can also be used for the stacking of additional on-chip PV cells to generate even more voltage without the need for additional processing steps and without compromising device performance. High-voltage CMOS PV modules could be used in voltage-driven microelectronic circuits (>1.8 V) or current-driven light sources (>1 mA) for a variety of applications. |
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High-Voltage Generation in CMOS Photovoltaic Devices by Localized Substrate Removal |
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http://dx.doi.org/10.1109/LED.2016.2550496 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7448853 |
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