A Top-Down Fabrication Process for Vertical Hollow Silicon Nanopillars
Hollow silicon nanopillars (HSiNPs) have been fabricated from a single crystal silicon wafer by a series of standard top-down microfabrication processes, specifically by an ambient temperature Bosch process using the nanosphere beads as the mask. The dimensions of the hollow silicon nanopillars can...
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| Autor*in: |
He, Yuan [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of microelectromechanical systems - New York, NY : IEEE, 1992, 25(2016), 4, Seite 662-667 |
|---|---|
| Übergeordnetes Werk: |
volume:25 ; year:2016 ; number:4 ; pages:662-667 |
| Links: |
|---|
| DOI / URN: |
10.1109/JMEMS.2016.2582341 |
|---|
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| 520 | |a Hollow silicon nanopillars (HSiNPs) have been fabricated from a single crystal silicon wafer by a series of standard top-down microfabrication processes, specifically by an ambient temperature Bosch process using the nanosphere beads as the mask. The dimensions of the hollow silicon nanopillars can be tuned with an outer diameter in the range of hundreds of nanometers and inner diameter from 70 to 700 nm. The density of the HSiNPs can be as high as <inline-formula> <tex-math notation="LaTeX">1.3 \,\, \times \,\, 10^{8} </tex-math></inline-formula>/cm 2 and their height-to-width aspect ratio can be as high as 20. The ratio of the wall thickness to the outer diameter of the HSiNPs can be tuned from 1/3 to 1/16. This process could be adapted or modified to fabricate hollow nanopillars from different semiconductors, oxides, and metals, thereby offering a generic method for fabricating hollow nanopillars. [2016-0021] | ||
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10.1109/JMEMS.2016.2582341 doi PQ20160815 (DE-627)OLC1980588686 (DE-599)GBVOLC1980588686 (PRQ)c1010-e8c333e334e4a8951578429f022ca9272d20353b1413579492e6c1e5d52608080 (KEY)0213815820160000025000400662topdownfabricationprocessforverticalhollowsiliconn DE-627 ger DE-627 rakwb eng 620 DNB He, Yuan verfasserin aut A Top-Down Fabrication Process for Vertical Hollow Silicon Nanopillars 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Hollow silicon nanopillars (HSiNPs) have been fabricated from a single crystal silicon wafer by a series of standard top-down microfabrication processes, specifically by an ambient temperature Bosch process using the nanosphere beads as the mask. The dimensions of the hollow silicon nanopillars can be tuned with an outer diameter in the range of hundreds of nanometers and inner diameter from 70 to 700 nm. The density of the HSiNPs can be as high as <inline-formula> <tex-math notation="LaTeX">1.3 \,\, \times \,\, 10^{8} </tex-math></inline-formula>/cm 2 and their height-to-width aspect ratio can be as high as 20. The ratio of the wall thickness to the outer diameter of the HSiNPs can be tuned from 1/3 to 1/16. This process could be adapted or modified to fabricate hollow nanopillars from different semiconductors, oxides, and metals, thereby offering a generic method for fabricating hollow nanopillars. [2016-0021] silicon nanotubes Silicon Nanotubes nanosphere beads Passivation hollow silicon nanopillars Plasmas Etching Nanobioscience Bosch process Silicon wafers Che, Xiangchen oth Que, Long oth Enthalten in Journal of microelectromechanical systems New York, NY : IEEE, 1992 25(2016), 4, Seite 662-667 (DE-627)131059963 (DE-600)1106644-1 (DE-576)032853254 1057-7157 nnns volume:25 year:2016 number:4 pages:662-667 http://dx.doi.org/10.1109/JMEMS.2016.2582341 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7502175 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_150 AR 25 2016 4 662-667 |
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10.1109/JMEMS.2016.2582341 doi PQ20160815 (DE-627)OLC1980588686 (DE-599)GBVOLC1980588686 (PRQ)c1010-e8c333e334e4a8951578429f022ca9272d20353b1413579492e6c1e5d52608080 (KEY)0213815820160000025000400662topdownfabricationprocessforverticalhollowsiliconn DE-627 ger DE-627 rakwb eng 620 DNB He, Yuan verfasserin aut A Top-Down Fabrication Process for Vertical Hollow Silicon Nanopillars 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Hollow silicon nanopillars (HSiNPs) have been fabricated from a single crystal silicon wafer by a series of standard top-down microfabrication processes, specifically by an ambient temperature Bosch process using the nanosphere beads as the mask. The dimensions of the hollow silicon nanopillars can be tuned with an outer diameter in the range of hundreds of nanometers and inner diameter from 70 to 700 nm. The density of the HSiNPs can be as high as <inline-formula> <tex-math notation="LaTeX">1.3 \,\, \times \,\, 10^{8} </tex-math></inline-formula>/cm 2 and their height-to-width aspect ratio can be as high as 20. The ratio of the wall thickness to the outer diameter of the HSiNPs can be tuned from 1/3 to 1/16. This process could be adapted or modified to fabricate hollow nanopillars from different semiconductors, oxides, and metals, thereby offering a generic method for fabricating hollow nanopillars. [2016-0021] silicon nanotubes Silicon Nanotubes nanosphere beads Passivation hollow silicon nanopillars Plasmas Etching Nanobioscience Bosch process Silicon wafers Che, Xiangchen oth Que, Long oth Enthalten in Journal of microelectromechanical systems New York, NY : IEEE, 1992 25(2016), 4, Seite 662-667 (DE-627)131059963 (DE-600)1106644-1 (DE-576)032853254 1057-7157 nnns volume:25 year:2016 number:4 pages:662-667 http://dx.doi.org/10.1109/JMEMS.2016.2582341 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7502175 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_150 AR 25 2016 4 662-667 |
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10.1109/JMEMS.2016.2582341 doi PQ20160815 (DE-627)OLC1980588686 (DE-599)GBVOLC1980588686 (PRQ)c1010-e8c333e334e4a8951578429f022ca9272d20353b1413579492e6c1e5d52608080 (KEY)0213815820160000025000400662topdownfabricationprocessforverticalhollowsiliconn DE-627 ger DE-627 rakwb eng 620 DNB He, Yuan verfasserin aut A Top-Down Fabrication Process for Vertical Hollow Silicon Nanopillars 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier Hollow silicon nanopillars (HSiNPs) have been fabricated from a single crystal silicon wafer by a series of standard top-down microfabrication processes, specifically by an ambient temperature Bosch process using the nanosphere beads as the mask. The dimensions of the hollow silicon nanopillars can be tuned with an outer diameter in the range of hundreds of nanometers and inner diameter from 70 to 700 nm. The density of the HSiNPs can be as high as <inline-formula> <tex-math notation="LaTeX">1.3 \,\, \times \,\, 10^{8} </tex-math></inline-formula>/cm 2 and their height-to-width aspect ratio can be as high as 20. The ratio of the wall thickness to the outer diameter of the HSiNPs can be tuned from 1/3 to 1/16. This process could be adapted or modified to fabricate hollow nanopillars from different semiconductors, oxides, and metals, thereby offering a generic method for fabricating hollow nanopillars. [2016-0021] silicon nanotubes Silicon Nanotubes nanosphere beads Passivation hollow silicon nanopillars Plasmas Etching Nanobioscience Bosch process Silicon wafers Che, Xiangchen oth Que, Long oth Enthalten in Journal of microelectromechanical systems New York, NY : IEEE, 1992 25(2016), 4, Seite 662-667 (DE-627)131059963 (DE-600)1106644-1 (DE-576)032853254 1057-7157 nnns volume:25 year:2016 number:4 pages:662-667 http://dx.doi.org/10.1109/JMEMS.2016.2582341 Volltext http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7502175 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC GBV_ILN_70 GBV_ILN_150 AR 25 2016 4 662-667 |
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top-down fabrication process for vertical hollow silicon nanopillars |
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A Top-Down Fabrication Process for Vertical Hollow Silicon Nanopillars |
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Hollow silicon nanopillars (HSiNPs) have been fabricated from a single crystal silicon wafer by a series of standard top-down microfabrication processes, specifically by an ambient temperature Bosch process using the nanosphere beads as the mask. The dimensions of the hollow silicon nanopillars can be tuned with an outer diameter in the range of hundreds of nanometers and inner diameter from 70 to 700 nm. The density of the HSiNPs can be as high as <inline-formula> <tex-math notation="LaTeX">1.3 \,\, \times \,\, 10^{8} </tex-math></inline-formula>/cm 2 and their height-to-width aspect ratio can be as high as 20. The ratio of the wall thickness to the outer diameter of the HSiNPs can be tuned from 1/3 to 1/16. This process could be adapted or modified to fabricate hollow nanopillars from different semiconductors, oxides, and metals, thereby offering a generic method for fabricating hollow nanopillars. [2016-0021] |
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Hollow silicon nanopillars (HSiNPs) have been fabricated from a single crystal silicon wafer by a series of standard top-down microfabrication processes, specifically by an ambient temperature Bosch process using the nanosphere beads as the mask. The dimensions of the hollow silicon nanopillars can be tuned with an outer diameter in the range of hundreds of nanometers and inner diameter from 70 to 700 nm. The density of the HSiNPs can be as high as <inline-formula> <tex-math notation="LaTeX">1.3 \,\, \times \,\, 10^{8} </tex-math></inline-formula>/cm 2 and their height-to-width aspect ratio can be as high as 20. The ratio of the wall thickness to the outer diameter of the HSiNPs can be tuned from 1/3 to 1/16. This process could be adapted or modified to fabricate hollow nanopillars from different semiconductors, oxides, and metals, thereby offering a generic method for fabricating hollow nanopillars. [2016-0021] |
| abstract_unstemmed |
Hollow silicon nanopillars (HSiNPs) have been fabricated from a single crystal silicon wafer by a series of standard top-down microfabrication processes, specifically by an ambient temperature Bosch process using the nanosphere beads as the mask. The dimensions of the hollow silicon nanopillars can be tuned with an outer diameter in the range of hundreds of nanometers and inner diameter from 70 to 700 nm. The density of the HSiNPs can be as high as <inline-formula> <tex-math notation="LaTeX">1.3 \,\, \times \,\, 10^{8} </tex-math></inline-formula>/cm 2 and their height-to-width aspect ratio can be as high as 20. The ratio of the wall thickness to the outer diameter of the HSiNPs can be tuned from 1/3 to 1/16. This process could be adapted or modified to fabricate hollow nanopillars from different semiconductors, oxides, and metals, thereby offering a generic method for fabricating hollow nanopillars. [2016-0021] |
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A Top-Down Fabrication Process for Vertical Hollow Silicon Nanopillars |
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http://dx.doi.org/10.1109/JMEMS.2016.2582341 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7502175 |
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Che, Xiangchen Que, Long |
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