Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer
We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plan...
Ausführliche Beschreibung
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| Autor*in: |
Chen, B. J [verfasserIn] |
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| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on magnetics - New York, NY : IEEE, 1965, 52(2016), 9, Seite 1-6 |
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| Übergeordnetes Werk: |
volume:52 ; year:2016 ; number:9 ; pages:1-6 |
| Links: |
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| DOI / URN: |
10.1109/TMAG.2016.2569066 |
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| Katalog-ID: |
OLC1981951369 |
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| 520 | |a We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. | ||
| 650 | 4 | |a magnetization switching | |
| 650 | 4 | |a Electric field (EF) | |
| 650 | 4 | |a Magnetization | |
| 650 | 4 | |a Reliability | |
| 650 | 4 | |a Electric fields | |
| 650 | 4 | |a Switches | |
| 650 | 4 | |a perpendicular magnetic tunnel junctions (MTJs) | |
| 650 | 4 | |a switching time | |
| 650 | 4 | |a Magnetic anisotropy | |
| 650 | 4 | |a Magnetic tunneling | |
| 650 | 4 | |a Damping | |
| 700 | 1 | |a Han, G. C |4 oth | |
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10.1109/TMAG.2016.2569066 doi PQ20161012 (DE-627)OLC1981951369 (DE-599)GBVOLC1981951369 (PRQ)c1241-4b715a44103612bb029808f7181b6ec2cab915fffd8f0ae30968acce894320700 (KEY)0061452120160000052000900001oerstedfieldguidedelectricfieldswitchinginperpendi DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Chen, B. J verfasserin aut Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. magnetization switching Electric field (EF) Magnetization Reliability Electric fields Switches perpendicular magnetic tunnel junctions (MTJs) switching time Magnetic anisotropy Magnetic tunneling Damping Han, G. C oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 52(2016), 9, Seite 1-6 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:52 year:2016 number:9 pages:1-6 http://dx.doi.org/10.1109/TMAG.2016.2569066 Volltext http://ieeexplore.ieee.org/document/7469845 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 52 2016 9 1-6 |
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10.1109/TMAG.2016.2569066 doi PQ20161012 (DE-627)OLC1981951369 (DE-599)GBVOLC1981951369 (PRQ)c1241-4b715a44103612bb029808f7181b6ec2cab915fffd8f0ae30968acce894320700 (KEY)0061452120160000052000900001oerstedfieldguidedelectricfieldswitchinginperpendi DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Chen, B. J verfasserin aut Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. magnetization switching Electric field (EF) Magnetization Reliability Electric fields Switches perpendicular magnetic tunnel junctions (MTJs) switching time Magnetic anisotropy Magnetic tunneling Damping Han, G. C oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 52(2016), 9, Seite 1-6 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:52 year:2016 number:9 pages:1-6 http://dx.doi.org/10.1109/TMAG.2016.2569066 Volltext http://ieeexplore.ieee.org/document/7469845 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 52 2016 9 1-6 |
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10.1109/TMAG.2016.2569066 doi PQ20161012 (DE-627)OLC1981951369 (DE-599)GBVOLC1981951369 (PRQ)c1241-4b715a44103612bb029808f7181b6ec2cab915fffd8f0ae30968acce894320700 (KEY)0061452120160000052000900001oerstedfieldguidedelectricfieldswitchinginperpendi DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Chen, B. J verfasserin aut Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. magnetization switching Electric field (EF) Magnetization Reliability Electric fields Switches perpendicular magnetic tunnel junctions (MTJs) switching time Magnetic anisotropy Magnetic tunneling Damping Han, G. C oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 52(2016), 9, Seite 1-6 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:52 year:2016 number:9 pages:1-6 http://dx.doi.org/10.1109/TMAG.2016.2569066 Volltext http://ieeexplore.ieee.org/document/7469845 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 52 2016 9 1-6 |
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10.1109/TMAG.2016.2569066 doi PQ20161012 (DE-627)OLC1981951369 (DE-599)GBVOLC1981951369 (PRQ)c1241-4b715a44103612bb029808f7181b6ec2cab915fffd8f0ae30968acce894320700 (KEY)0061452120160000052000900001oerstedfieldguidedelectricfieldswitchinginperpendi DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Chen, B. J verfasserin aut Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. magnetization switching Electric field (EF) Magnetization Reliability Electric fields Switches perpendicular magnetic tunnel junctions (MTJs) switching time Magnetic anisotropy Magnetic tunneling Damping Han, G. C oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 52(2016), 9, Seite 1-6 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:52 year:2016 number:9 pages:1-6 http://dx.doi.org/10.1109/TMAG.2016.2569066 Volltext http://ieeexplore.ieee.org/document/7469845 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 52 2016 9 1-6 |
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10.1109/TMAG.2016.2569066 doi PQ20161012 (DE-627)OLC1981951369 (DE-599)GBVOLC1981951369 (PRQ)c1241-4b715a44103612bb029808f7181b6ec2cab915fffd8f0ae30968acce894320700 (KEY)0061452120160000052000900001oerstedfieldguidedelectricfieldswitchinginperpendi DE-627 ger DE-627 rakwb eng 620 DNB 33.75 bkl 33.16 bkl Chen, B. J verfasserin aut Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. magnetization switching Electric field (EF) Magnetization Reliability Electric fields Switches perpendicular magnetic tunnel junctions (MTJs) switching time Magnetic anisotropy Magnetic tunneling Damping Han, G. C oth Enthalten in IEEE transactions on magnetics New York, NY : IEEE, 1965 52(2016), 9, Seite 1-6 (DE-627)129602078 (DE-600)241508-2 (DE-576)015095789 0018-9464 nnns volume:52 year:2016 number:9 pages:1-6 http://dx.doi.org/10.1109/TMAG.2016.2569066 Volltext http://ieeexplore.ieee.org/document/7469845 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_170 33.75 AVZ 33.16 AVZ AR 52 2016 9 1-6 |
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J</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. 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Chen, B. J ddc 620 bkl 33.75 bkl 33.16 misc magnetization switching misc Electric field (EF) misc Magnetization misc Reliability misc Electric fields misc Switches misc perpendicular magnetic tunnel junctions (MTJs) misc switching time misc Magnetic anisotropy misc Magnetic tunneling misc Damping Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer |
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620 DNB 33.75 bkl 33.16 bkl Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer magnetization switching Electric field (EF) Magnetization Reliability Electric fields Switches perpendicular magnetic tunnel junctions (MTJs) switching time Magnetic anisotropy Magnetic tunneling Damping |
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Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer |
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oersted field-guided electric field switching in perpendicular magnetic free layer |
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Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer |
| abstract |
We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. |
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We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. |
| abstract_unstemmed |
We study the electric field (EF)-assisted magnetization switching in perpendicular magnetic free layer guided by an Oersted field using micromagnetic simulations. The EF is used to reduce the perpendicular magnetic anisotropy (PMA), and thus change the easy axis from the perpendicular to the in-plane. The Oersted field is used to guide the magnetization to the desired switching directions. The effects of various physical parameters, such as the damping constant, the PMA change, the PMA after EF, the saturation magnetization, and the Oersted field, on the switching times are examined. The simulation results indicate that the switching time decreases with the increase in the damping constant and the Oersted field. The EF efficiency has a significant effect on the switching performance. In order to make a fast and energy-saving switching, the PMA of the free layer needs to be properly controlled. Simulation results also show that a material with higher <inline-formula> <tex-math notation="LaTeX">M_{s} </tex-math></inline-formula> needs a lower EF efficiency for fast switching. For the merit of a fast switching, large damping constant (<inline-formula> <tex-math notation="LaTeX">\alpha > 0.1 </tex-math></inline-formula>) should be used. In addition, large damping constant requires a small Oersted field for a reliable switching, which reduces the energy during writing. For <inline-formula> <tex-math notation="LaTeX">\alpha = 0.3 </tex-math></inline-formula>, a fast total switching time within 3 ns can be achieved with an Oersted field as small as 1 mT. |
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Oersted Field-Guided Electric Field Switching in Perpendicular Magnetic Free Layer |
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