Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

Gespeichert in:

Autor*in:	Polyakov, A.Y [verfasserIn] Smirnov, N.B Yakimov, E.B Tarelkin, S.A Turutin, A.V Shemerov, I.V Pearton, S.J Bae, Kang-Bin Lee, In-Hwan

Format:	Artikel
Sprache:	Englisch

Erschienen:	2016

Übergeordnetes Werk:	Enthalten in: Journal of alloys and compounds - Lausanne : Elsevier Sequoia, 1991, 686(2016), Seite 1044-1052
Übergeordnetes Werk:	volume:686 ; year:2016 ; pages:1044-1052

Links:	Volltext

DOI / URN:	10.1016/j.jallcom.2016.06.297

Katalog-ID:	OLC1983930458

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Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

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