Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique
This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Liu, Yuhao [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2016 |
|---|
| Schlagwörter: |
microelectromechanical system (MEMS) reliability |
|---|
| Übergeordnetes Werk: |
Enthalten in: IEEE transactions on microwave theory and techniques - New York, NY : IEEE, 1963, 64(2016), 10, Seite 3151-3162 |
|---|---|
| Übergeordnetes Werk: |
volume:64 ; year:2016 ; number:10 ; pages:3151-3162 |
| Links: |
|---|
| DOI / URN: |
10.1109/TMTT.2016.2598170 |
|---|
| Katalog-ID: |
OLC198416046X |
|---|
| LEADER | 01000caa a2200265 4500 | ||
|---|---|---|---|
| 001 | OLC198416046X | ||
| 003 | DE-627 | ||
| 005 | 20230714223150.0 | ||
| 007 | tu | ||
| 008 | 161202s2016 xx ||||| 00| ||eng c | ||
| 024 | 7 | |a 10.1109/TMTT.2016.2598170 |2 doi | |
| 028 | 5 | 2 | |a PQ20170301 |
| 035 | |a (DE-627)OLC198416046X | ||
| 035 | |a (DE-599)GBVOLC198416046X | ||
| 035 | |a (PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0 | ||
| 035 | |a (KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 620 |q DNB |
| 084 | |a 53.00 |2 bkl | ||
| 100 | 1 | |a Liu, Yuhao |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique |
| 264 | 1 | |c 2016 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a ohne Hilfsmittel zu benutzen |b n |2 rdamedia | ||
| 338 | |a Band |b nc |2 rdacarrier | ||
| 520 | |a This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. | ||
| 650 | 4 | |a Contact resistance | |
| 650 | 4 | |a Radio frequency | |
| 650 | 4 | |a microelectromechanical system (MEMS) reliability | |
| 650 | 4 | |a radio frequency MEMS (RF-MEMS) | |
| 650 | 4 | |a Reliability | |
| 650 | 4 | |a Switches | |
| 650 | 4 | |a Integrated circuit modeling | |
| 650 | 4 | |a Electrodes | |
| 650 | 4 | |a hot switching | |
| 650 | 4 | |a MEMS switch | |
| 650 | 4 | |a Contact protection | |
| 650 | 4 | |a Microelectromechanical systems | |
| 700 | 1 | |a Bey, Yusha |4 oth | |
| 700 | 1 | |a Liu, Xiaoguang |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |t IEEE transactions on microwave theory and techniques |d New York, NY : IEEE, 1963 |g 64(2016), 10, Seite 3151-3162 |w (DE-627)129547344 |w (DE-600)218509-X |w (DE-576)01499822X |x 0018-9480 |7 nnns |
| 773 | 1 | 8 | |g volume:64 |g year:2016 |g number:10 |g pages:3151-3162 |
| 856 | 4 | 1 | |u http://dx.doi.org/10.1109/TMTT.2016.2598170 |3 Volltext |
| 856 | 4 | 2 | |u http://ieeexplore.ieee.org/document/7547324 |
| 912 | |a GBV_USEFLAG_A | ||
| 912 | |a SYSFLAG_A | ||
| 912 | |a GBV_OLC | ||
| 912 | |a SSG-OLC-TEC | ||
| 912 | |a SSG-OLC-PHY | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2016 | ||
| 912 | |a GBV_ILN_4313 | ||
| 936 | b | k | |a 53.00 |q AVZ |
| 951 | |a AR | ||
| 952 | |d 64 |j 2016 |e 10 |h 3151-3162 | ||
| author_variant |
y l yl |
|---|---|
| matchkey_str |
article:00189480:2016----::xesooteosicigeibltormmsiceuigsrec |
| hierarchy_sort_str |
2016 |
| bklnumber |
53.00 |
| publishDate |
2016 |
| allfields |
10.1109/TMTT.2016.2598170 doi PQ20170301 (DE-627)OLC198416046X (DE-599)GBVOLC198416046X (PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0 (KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Liu, Yuhao verfasserin aut Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. Contact resistance Radio frequency microelectromechanical system (MEMS) reliability radio frequency MEMS (RF-MEMS) Reliability Switches Integrated circuit modeling Electrodes hot switching MEMS switch Contact protection Microelectromechanical systems Bey, Yusha oth Liu, Xiaoguang oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 10, Seite 3151-3162 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:10 pages:3151-3162 http://dx.doi.org/10.1109/TMTT.2016.2598170 Volltext http://ieeexplore.ieee.org/document/7547324 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 10 3151-3162 |
| spelling |
10.1109/TMTT.2016.2598170 doi PQ20170301 (DE-627)OLC198416046X (DE-599)GBVOLC198416046X (PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0 (KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Liu, Yuhao verfasserin aut Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. Contact resistance Radio frequency microelectromechanical system (MEMS) reliability radio frequency MEMS (RF-MEMS) Reliability Switches Integrated circuit modeling Electrodes hot switching MEMS switch Contact protection Microelectromechanical systems Bey, Yusha oth Liu, Xiaoguang oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 10, Seite 3151-3162 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:10 pages:3151-3162 http://dx.doi.org/10.1109/TMTT.2016.2598170 Volltext http://ieeexplore.ieee.org/document/7547324 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 10 3151-3162 |
| allfields_unstemmed |
10.1109/TMTT.2016.2598170 doi PQ20170301 (DE-627)OLC198416046X (DE-599)GBVOLC198416046X (PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0 (KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Liu, Yuhao verfasserin aut Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. Contact resistance Radio frequency microelectromechanical system (MEMS) reliability radio frequency MEMS (RF-MEMS) Reliability Switches Integrated circuit modeling Electrodes hot switching MEMS switch Contact protection Microelectromechanical systems Bey, Yusha oth Liu, Xiaoguang oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 10, Seite 3151-3162 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:10 pages:3151-3162 http://dx.doi.org/10.1109/TMTT.2016.2598170 Volltext http://ieeexplore.ieee.org/document/7547324 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 10 3151-3162 |
| allfieldsGer |
10.1109/TMTT.2016.2598170 doi PQ20170301 (DE-627)OLC198416046X (DE-599)GBVOLC198416046X (PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0 (KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Liu, Yuhao verfasserin aut Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. Contact resistance Radio frequency microelectromechanical system (MEMS) reliability radio frequency MEMS (RF-MEMS) Reliability Switches Integrated circuit modeling Electrodes hot switching MEMS switch Contact protection Microelectromechanical systems Bey, Yusha oth Liu, Xiaoguang oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 10, Seite 3151-3162 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:10 pages:3151-3162 http://dx.doi.org/10.1109/TMTT.2016.2598170 Volltext http://ieeexplore.ieee.org/document/7547324 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 10 3151-3162 |
| allfieldsSound |
10.1109/TMTT.2016.2598170 doi PQ20170301 (DE-627)OLC198416046X (DE-599)GBVOLC198416046X (PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0 (KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Liu, Yuhao verfasserin aut Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. Contact resistance Radio frequency microelectromechanical system (MEMS) reliability radio frequency MEMS (RF-MEMS) Reliability Switches Integrated circuit modeling Electrodes hot switching MEMS switch Contact protection Microelectromechanical systems Bey, Yusha oth Liu, Xiaoguang oth Enthalten in IEEE transactions on microwave theory and techniques New York, NY : IEEE, 1963 64(2016), 10, Seite 3151-3162 (DE-627)129547344 (DE-600)218509-X (DE-576)01499822X 0018-9480 nnns volume:64 year:2016 number:10 pages:3151-3162 http://dx.doi.org/10.1109/TMTT.2016.2598170 Volltext http://ieeexplore.ieee.org/document/7547324 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 53.00 AVZ AR 64 2016 10 3151-3162 |
| language |
English |
| source |
Enthalten in IEEE transactions on microwave theory and techniques 64(2016), 10, Seite 3151-3162 volume:64 year:2016 number:10 pages:3151-3162 |
| sourceStr |
Enthalten in IEEE transactions on microwave theory and techniques 64(2016), 10, Seite 3151-3162 volume:64 year:2016 number:10 pages:3151-3162 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| topic_facet |
Contact resistance Radio frequency microelectromechanical system (MEMS) reliability radio frequency MEMS (RF-MEMS) Reliability Switches Integrated circuit modeling Electrodes hot switching MEMS switch Contact protection Microelectromechanical systems |
| dewey-raw |
620 |
| isfreeaccess_bool |
false |
| container_title |
IEEE transactions on microwave theory and techniques |
| authorswithroles_txt_mv |
Liu, Yuhao @@aut@@ Bey, Yusha @@oth@@ Liu, Xiaoguang @@oth@@ |
| publishDateDaySort_date |
2016-01-01T00:00:00Z |
| hierarchy_top_id |
129547344 |
| dewey-sort |
3620 |
| id |
OLC198416046X |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC198416046X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714223150.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">161202s2016 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TMTT.2016.2598170</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170301</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC198416046X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC198416046X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Liu, Yuhao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Contact resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Radio frequency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">microelectromechanical system (MEMS) reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">radio frequency MEMS (RF-MEMS)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switches</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuit modeling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrodes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">hot switching</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MEMS switch</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Contact protection</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microelectromechanical systems</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bey, Yusha</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Xiaoguang</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on microwave theory and techniques</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">64(2016), 10, Seite 3151-3162</subfield><subfield code="w">(DE-627)129547344</subfield><subfield code="w">(DE-600)218509-X</subfield><subfield code="w">(DE-576)01499822X</subfield><subfield code="x">0018-9480</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:64</subfield><subfield code="g">year:2016</subfield><subfield code="g">number:10</subfield><subfield code="g">pages:3151-3162</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TMTT.2016.2598170</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/document/7547324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.00</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">64</subfield><subfield code="j">2016</subfield><subfield code="e">10</subfield><subfield code="h">3151-3162</subfield></datafield></record></collection>
|
| author |
Liu, Yuhao |
| spellingShingle |
Liu, Yuhao ddc 620 bkl 53.00 misc Contact resistance misc Radio frequency misc microelectromechanical system (MEMS) reliability misc radio frequency MEMS (RF-MEMS) misc Reliability misc Switches misc Integrated circuit modeling misc Electrodes misc hot switching misc MEMS switch misc Contact protection misc Microelectromechanical systems Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique |
| authorStr |
Liu, Yuhao |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)129547344 |
| format |
Article |
| dewey-ones |
620 - Engineering & allied operations |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
OLC |
| remote_str |
false |
| illustrated |
Not Illustrated |
| issn |
0018-9480 |
| topic_title |
620 DNB 53.00 bkl Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique Contact resistance Radio frequency microelectromechanical system (MEMS) reliability radio frequency MEMS (RF-MEMS) Reliability Switches Integrated circuit modeling Electrodes hot switching MEMS switch Contact protection Microelectromechanical systems |
| topic |
ddc 620 bkl 53.00 misc Contact resistance misc Radio frequency misc microelectromechanical system (MEMS) reliability misc radio frequency MEMS (RF-MEMS) misc Reliability misc Switches misc Integrated circuit modeling misc Electrodes misc hot switching misc MEMS switch misc Contact protection misc Microelectromechanical systems |
| topic_unstemmed |
ddc 620 bkl 53.00 misc Contact resistance misc Radio frequency misc microelectromechanical system (MEMS) reliability misc radio frequency MEMS (RF-MEMS) misc Reliability misc Switches misc Integrated circuit modeling misc Electrodes misc hot switching misc MEMS switch misc Contact protection misc Microelectromechanical systems |
| topic_browse |
ddc 620 bkl 53.00 misc Contact resistance misc Radio frequency misc microelectromechanical system (MEMS) reliability misc radio frequency MEMS (RF-MEMS) misc Reliability misc Switches misc Integrated circuit modeling misc Electrodes misc hot switching misc MEMS switch misc Contact protection misc Microelectromechanical systems |
| format_facet |
Aufsätze Gedruckte Aufsätze |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
nc |
| author2_variant |
y b yb x l xl |
| hierarchy_parent_title |
IEEE transactions on microwave theory and techniques |
| hierarchy_parent_id |
129547344 |
| dewey-tens |
620 - Engineering |
| hierarchy_top_title |
IEEE transactions on microwave theory and techniques |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)129547344 (DE-600)218509-X (DE-576)01499822X |
| title |
Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique |
| ctrlnum |
(DE-627)OLC198416046X (DE-599)GBVOLC198416046X (PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0 (KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc |
| title_full |
Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique |
| author_sort |
Liu, Yuhao |
| journal |
IEEE transactions on microwave theory and techniques |
| journalStr |
IEEE transactions on microwave theory and techniques |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2016 |
| contenttype_str_mv |
txt |
| container_start_page |
3151 |
| author_browse |
Liu, Yuhao |
| container_volume |
64 |
| class |
620 DNB 53.00 bkl |
| format_se |
Aufsätze |
| author-letter |
Liu, Yuhao |
| doi_str_mv |
10.1109/TMTT.2016.2598170 |
| dewey-full |
620 |
| title_sort |
extension of the hot-switching reliability of rf-mems switches using a series contact protection technique |
| title_auth |
Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique |
| abstract |
This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. |
| abstractGer |
This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. |
| abstract_unstemmed |
This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime. |
| collection_details |
GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2016 GBV_ILN_4313 |
| container_issue |
10 |
| title_short |
Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique |
| url |
http://dx.doi.org/10.1109/TMTT.2016.2598170 http://ieeexplore.ieee.org/document/7547324 |
| remote_bool |
false |
| author2 |
Bey, Yusha Liu, Xiaoguang |
| author2Str |
Bey, Yusha Liu, Xiaoguang |
| ppnlink |
129547344 |
| mediatype_str_mv |
n |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth |
| doi_str |
10.1109/TMTT.2016.2598170 |
| up_date |
2024-07-03T23:24:46.727Z |
| _version_ |
1803602191165947904 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a2200265 4500</leader><controlfield tag="001">OLC198416046X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230714223150.0</controlfield><controlfield tag="007">tu</controlfield><controlfield tag="008">161202s2016 xx ||||| 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1109/TMTT.2016.2598170</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">PQ20170301</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)OLC198416046X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVOLC198416046X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(PRQ)c1604-dfb573451190fe8b9c9d821fa8ab716595b7144965f58e0c0db82ef54961b5f0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(KEY)0017514520160000064001003151extensionofthehotswitchingreliabilityofrfmemsswitc</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">DNB</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Liu, Yuhao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Extension of the Hot-Switching Reliability of RF-MEMS Switches Using a Series Contact Protection Technique</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">ohne Hilfsmittel zu benutzen</subfield><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Band</subfield><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper presents a design methodology to drastically improve the hot-switching reliability of contact-type radio frequency microelectromechanical system (RF-MEMS) switches. In the proposed design, sacrificial contacts are placed in parallel with low-resistance contacts to significantly reduce the electric field across the latter. The lower field strength drastically reduces the contact degradation associated with field-induced material transfer. Theoretical and numerical modeling shows that the proposed protection scheme introduces minimal, if any, impact on the RF performance of the switch. To realize the protection scheme, we introduce a novel mechanical design that allows the correct protection actuation sequence to be realized using a single actuator and bias electrode. As a demonstration, several 0-40-GHz RF-MEMS switches are fabricated using a robust copper sacrificial layer technique. Compared with unprotected switches, the protected switch design exhibits over 100 times improvement in the hot-switching lifetime. In particular, we demonstrate a 100-150 million cycle lifetime at 1-W hot switching and 50 million cycles at 2-W hot switching before catastrophic failure, measured in an open-air lab environment. Further optimization of the structural design and contact materials is likely to further increase the hot-switching lifetime.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Contact resistance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Radio frequency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">microelectromechanical system (MEMS) reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">radio frequency MEMS (RF-MEMS)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Reliability</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Switches</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuit modeling</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrodes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">hot switching</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">MEMS switch</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Contact protection</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microelectromechanical systems</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bey, Yusha</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Xiaoguang</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">IEEE transactions on microwave theory and techniques</subfield><subfield code="d">New York, NY : IEEE, 1963</subfield><subfield code="g">64(2016), 10, Seite 3151-3162</subfield><subfield code="w">(DE-627)129547344</subfield><subfield code="w">(DE-600)218509-X</subfield><subfield code="w">(DE-576)01499822X</subfield><subfield code="x">0018-9480</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:64</subfield><subfield code="g">year:2016</subfield><subfield code="g">number:10</subfield><subfield code="g">pages:3151-3162</subfield></datafield><datafield tag="856" ind1="4" ind2="1"><subfield code="u">http://dx.doi.org/10.1109/TMTT.2016.2598170</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="u">http://ieeexplore.ieee.org/document/7547324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_OLC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-TEC</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHY</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2016</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.00</subfield><subfield code="q">AVZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">64</subfield><subfield code="j">2016</subfield><subfield code="e">10</subfield><subfield code="h">3151-3162</subfield></datafield></record></collection>
|
| score |
7.398551 |