d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs

In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite...
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Autor*in:	Hemo, Evyatar [verfasserIn] Cassuto, Yuval

Format:	Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	Codes Encoding Performance evaluation Decoding channel coding flash memory cells write once memories inter-cell interference Error correction codes Upper bound multi-write codes Nonvolatile memory Interference

Übergeordnetes Werk:	Enthalten in: IEEE journal on selected areas in communications - New York, NY : IEEE, 1983, 34(2016), 9, Seite 2378-2390
Übergeordnetes Werk:	volume:34 ; year:2016 ; number:9 ; pages:2378-2390

Links:	Volltext Link aufrufen

DOI / URN:	10.1109/JSAC.2016.2603621

Katalog-ID:	OLC1985379082

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520			\|a In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models.
650		4	\|a Codes
650		4	\|a Encoding
650		4	\|a Performance evaluation
650		4	\|a Decoding
650		4	\|a channel coding
650		4	\|a flash memory cells
650		4	\|a write once memories
650		4	\|a inter-cell interference
650		4	\|a Error correction codes
650		4	\|a Upper bound
650		4	\|a multi-write codes
650		4	\|a Nonvolatile memory
650		4	\|a Interference
700	1		\|a Cassuto, Yuval \|4 oth
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allfields	10.1109/JSAC.2016.2603621 doi PQ20170206 (DE-627)OLC1985379082 (DE-599)GBVOLC1985379082 (PRQ)i658-82bcdf91aa6cfa02655066dd657f30786029b2611878534e646e7ad5558d0d970 (KEY)0128448720160000034000902378dimbalancewomcodesforreducedintercellinterferencei DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hemo, Evyatar verfasserin aut d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models. Codes Encoding Performance evaluation Decoding channel coding flash memory cells write once memories inter-cell interference Error correction codes Upper bound multi-write codes Nonvolatile memory Interference Cassuto, Yuval oth Enthalten in IEEE journal on selected areas in communications New York, NY : IEEE, 1983 34(2016), 9, Seite 2378-2390 (DE-627)130399868 (DE-600)605072-4 (DE-576)015903427 0733-8716 nnns volume:34 year:2016 number:9 pages:2378-2390 http://dx.doi.org/10.1109/JSAC.2016.2603621 Volltext http://ieeexplore.ieee.org/document/7553494 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MKW GBV_ILN_70 GBV_ILN_2014 GBV_ILN_2061 53.00 AVZ AR 34 2016 9 2378-2390
spelling	10.1109/JSAC.2016.2603621 doi PQ20170206 (DE-627)OLC1985379082 (DE-599)GBVOLC1985379082 (PRQ)i658-82bcdf91aa6cfa02655066dd657f30786029b2611878534e646e7ad5558d0d970 (KEY)0128448720160000034000902378dimbalancewomcodesforreducedintercellinterferencei DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hemo, Evyatar verfasserin aut d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models. Codes Encoding Performance evaluation Decoding channel coding flash memory cells write once memories inter-cell interference Error correction codes Upper bound multi-write codes Nonvolatile memory Interference Cassuto, Yuval oth Enthalten in IEEE journal on selected areas in communications New York, NY : IEEE, 1983 34(2016), 9, Seite 2378-2390 (DE-627)130399868 (DE-600)605072-4 (DE-576)015903427 0733-8716 nnns volume:34 year:2016 number:9 pages:2378-2390 http://dx.doi.org/10.1109/JSAC.2016.2603621 Volltext http://ieeexplore.ieee.org/document/7553494 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MKW GBV_ILN_70 GBV_ILN_2014 GBV_ILN_2061 53.00 AVZ AR 34 2016 9 2378-2390
allfields_unstemmed	10.1109/JSAC.2016.2603621 doi PQ20170206 (DE-627)OLC1985379082 (DE-599)GBVOLC1985379082 (PRQ)i658-82bcdf91aa6cfa02655066dd657f30786029b2611878534e646e7ad5558d0d970 (KEY)0128448720160000034000902378dimbalancewomcodesforreducedintercellinterferencei DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hemo, Evyatar verfasserin aut d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models. Codes Encoding Performance evaluation Decoding channel coding flash memory cells write once memories inter-cell interference Error correction codes Upper bound multi-write codes Nonvolatile memory Interference Cassuto, Yuval oth Enthalten in IEEE journal on selected areas in communications New York, NY : IEEE, 1983 34(2016), 9, Seite 2378-2390 (DE-627)130399868 (DE-600)605072-4 (DE-576)015903427 0733-8716 nnns volume:34 year:2016 number:9 pages:2378-2390 http://dx.doi.org/10.1109/JSAC.2016.2603621 Volltext http://ieeexplore.ieee.org/document/7553494 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MKW GBV_ILN_70 GBV_ILN_2014 GBV_ILN_2061 53.00 AVZ AR 34 2016 9 2378-2390
allfieldsGer	10.1109/JSAC.2016.2603621 doi PQ20170206 (DE-627)OLC1985379082 (DE-599)GBVOLC1985379082 (PRQ)i658-82bcdf91aa6cfa02655066dd657f30786029b2611878534e646e7ad5558d0d970 (KEY)0128448720160000034000902378dimbalancewomcodesforreducedintercellinterferencei DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hemo, Evyatar verfasserin aut d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models. Codes Encoding Performance evaluation Decoding channel coding flash memory cells write once memories inter-cell interference Error correction codes Upper bound multi-write codes Nonvolatile memory Interference Cassuto, Yuval oth Enthalten in IEEE journal on selected areas in communications New York, NY : IEEE, 1983 34(2016), 9, Seite 2378-2390 (DE-627)130399868 (DE-600)605072-4 (DE-576)015903427 0733-8716 nnns volume:34 year:2016 number:9 pages:2378-2390 http://dx.doi.org/10.1109/JSAC.2016.2603621 Volltext http://ieeexplore.ieee.org/document/7553494 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MKW GBV_ILN_70 GBV_ILN_2014 GBV_ILN_2061 53.00 AVZ AR 34 2016 9 2378-2390
allfieldsSound	10.1109/JSAC.2016.2603621 doi PQ20170206 (DE-627)OLC1985379082 (DE-599)GBVOLC1985379082 (PRQ)i658-82bcdf91aa6cfa02655066dd657f30786029b2611878534e646e7ad5558d0d970 (KEY)0128448720160000034000902378dimbalancewomcodesforreducedintercellinterferencei DE-627 ger DE-627 rakwb eng 620 DNB 53.00 bkl Hemo, Evyatar verfasserin aut d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models. Codes Encoding Performance evaluation Decoding channel coding flash memory cells write once memories inter-cell interference Error correction codes Upper bound multi-write codes Nonvolatile memory Interference Cassuto, Yuval oth Enthalten in IEEE journal on selected areas in communications New York, NY : IEEE, 1983 34(2016), 9, Seite 2378-2390 (DE-627)130399868 (DE-600)605072-4 (DE-576)015903427 0733-8716 nnns volume:34 year:2016 number:9 pages:2378-2390 http://dx.doi.org/10.1109/JSAC.2016.2603621 Volltext http://ieeexplore.ieee.org/document/7553494 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-MKW GBV_ILN_70 GBV_ILN_2014 GBV_ILN_2061 53.00 AVZ AR 34 2016 9 2378-2390
language	English
source	Enthalten in IEEE journal on selected areas in communications 34(2016), 9, Seite 2378-2390 volume:34 year:2016 number:9 pages:2378-2390
sourceStr	Enthalten in IEEE journal on selected areas in communications 34(2016), 9, Seite 2378-2390 volume:34 year:2016 number:9 pages:2378-2390
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topic_facet	Codes Encoding Performance evaluation Decoding channel coding flash memory cells write once memories inter-cell interference Error correction codes Upper bound multi-write codes Nonvolatile memory Interference
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By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. 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author	Hemo, Evyatar
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topic_title	620 DNB 53.00 bkl d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs Codes Encoding Performance evaluation Decoding channel coding flash memory cells write once memories inter-cell interference Error correction codes Upper bound multi-write codes Nonvolatile memory Interference
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title	d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs
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title_full	d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs
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title_sort	d -imbalance wom codes for reduced inter-cell interference in multi-level nvms
title_auth	d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs
abstract	In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models.
abstractGer	In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models.
abstract_unstemmed	In recent years, due to the spread of multi-level non-volatile memories (NVMs), <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula>-ary write-once memory (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs <inline-formula> <tex-math notation="LaTeX">t </tex-math></inline-formula> times before erasing the cells. Use of WOM codes enables the improvement of the performance of the storage device; however, it may also increase errors caused by inter-cell interference (ICI). This paper presents WOM codes that restrict the imbalance between code symbols throughout the write sequence, hence decreasing ICI. We first specify the imbalance model as a bound <inline-formula> <tex-math notation="LaTeX">d </tex-math></inline-formula> on the difference between codeword levels. Then, a two-cell code construction for general <inline-formula> <tex-math notation="LaTeX">q </tex-math></inline-formula> and input size is proposed. An upper bound on the write count is also derived, showing the optimality of the proposed construction. In addition to direct WOM constructions, we derive closed-form optimal write regions for codes constructed with continuous lattices. On the coding side, the proposed codes are shown to be competitive with known codes not adhering to the bounded imbalance constraint. On the memory side, we show how the codes can be deployed within flash wordlines, and quantify their bit-error rate advantage using accepted ICI models.
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title_short	d -Imbalance WOM Codes for Reduced Inter-Cell Interference in Multi-Level NVMs
url	http://dx.doi.org/10.1109/JSAC.2016.2603621 http://ieeexplore.ieee.org/document/7553494
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