Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System
We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wave...
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| Autor*in: |
Kita, Tomohiro [verfasserIn] |
|---|
| Format: |
Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE journal of selected topics in quantum electronics - New York, NY : IEEE, 1995, 22(2016), 6, Seite 1-12 |
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| Übergeordnetes Werk: |
volume:22 ; year:2016 ; number:6 ; pages:1-12 |
| Links: |
|---|
| DOI / URN: |
10.1109/JSTQE.2016.2559418 |
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OLC1986126854 |
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| 520 | |a We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. | ||
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| 700 | 1 | |a Tang, Rui |4 oth | |
| 700 | 1 | |a Yamada, Hirohito |4 oth | |
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10.1109/JSTQE.2016.2559418 doi PQ20170301 (DE-627)OLC1986126854 (DE-599)GBVOLC1986126854 (PRQ)c1611-b2312d08ca96514969cc09f442dd369032df0b7e12c6cd32a7c639f19bf0ae100 (KEY)0272399920160000022000600001narrowspectrallinewidthsiliconphotonicwavelengthtu DE-627 ger DE-627 rakwb eng 530 620 DNB Kita, Tomohiro verfasserin aut Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. Optical waveguides Silicon Semiconductor optical amplifiers Silicon photonics semiconductor laser Resonator filters Optical ring resonators Cavity resonators Optical filters Tang, Rui oth Yamada, Hirohito oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-12 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-12 http://dx.doi.org/10.1109/JSTQE.2016.2559418 Volltext http://ieeexplore.ieee.org/document/7460878 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-12 |
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10.1109/JSTQE.2016.2559418 doi PQ20170301 (DE-627)OLC1986126854 (DE-599)GBVOLC1986126854 (PRQ)c1611-b2312d08ca96514969cc09f442dd369032df0b7e12c6cd32a7c639f19bf0ae100 (KEY)0272399920160000022000600001narrowspectrallinewidthsiliconphotonicwavelengthtu DE-627 ger DE-627 rakwb eng 530 620 DNB Kita, Tomohiro verfasserin aut Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. Optical waveguides Silicon Semiconductor optical amplifiers Silicon photonics semiconductor laser Resonator filters Optical ring resonators Cavity resonators Optical filters Tang, Rui oth Yamada, Hirohito oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-12 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-12 http://dx.doi.org/10.1109/JSTQE.2016.2559418 Volltext http://ieeexplore.ieee.org/document/7460878 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-12 |
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10.1109/JSTQE.2016.2559418 doi PQ20170301 (DE-627)OLC1986126854 (DE-599)GBVOLC1986126854 (PRQ)c1611-b2312d08ca96514969cc09f442dd369032df0b7e12c6cd32a7c639f19bf0ae100 (KEY)0272399920160000022000600001narrowspectrallinewidthsiliconphotonicwavelengthtu DE-627 ger DE-627 rakwb eng 530 620 DNB Kita, Tomohiro verfasserin aut Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. Optical waveguides Silicon Semiconductor optical amplifiers Silicon photonics semiconductor laser Resonator filters Optical ring resonators Cavity resonators Optical filters Tang, Rui oth Yamada, Hirohito oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-12 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-12 http://dx.doi.org/10.1109/JSTQE.2016.2559418 Volltext http://ieeexplore.ieee.org/document/7460878 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-12 |
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10.1109/JSTQE.2016.2559418 doi PQ20170301 (DE-627)OLC1986126854 (DE-599)GBVOLC1986126854 (PRQ)c1611-b2312d08ca96514969cc09f442dd369032df0b7e12c6cd32a7c639f19bf0ae100 (KEY)0272399920160000022000600001narrowspectrallinewidthsiliconphotonicwavelengthtu DE-627 ger DE-627 rakwb eng 530 620 DNB Kita, Tomohiro verfasserin aut Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. Optical waveguides Silicon Semiconductor optical amplifiers Silicon photonics semiconductor laser Resonator filters Optical ring resonators Cavity resonators Optical filters Tang, Rui oth Yamada, Hirohito oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-12 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-12 http://dx.doi.org/10.1109/JSTQE.2016.2559418 Volltext http://ieeexplore.ieee.org/document/7460878 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-12 |
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10.1109/JSTQE.2016.2559418 doi PQ20170301 (DE-627)OLC1986126854 (DE-599)GBVOLC1986126854 (PRQ)c1611-b2312d08ca96514969cc09f442dd369032df0b7e12c6cd32a7c639f19bf0ae100 (KEY)0272399920160000022000600001narrowspectrallinewidthsiliconphotonicwavelengthtu DE-627 ger DE-627 rakwb eng 530 620 DNB Kita, Tomohiro verfasserin aut Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. Optical waveguides Silicon Semiconductor optical amplifiers Silicon photonics semiconductor laser Resonator filters Optical ring resonators Cavity resonators Optical filters Tang, Rui oth Yamada, Hirohito oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-12 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-12 http://dx.doi.org/10.1109/JSTQE.2016.2559418 Volltext http://ieeexplore.ieee.org/document/7460878 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-12 |
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Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System |
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We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. |
| abstractGer |
We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. |
| abstract_unstemmed |
We demonstrated wavelength tunable laser diodes with Si-wire waveguide ring resonators as an external optical cavity. The footprint of the optical cavity including the semiconductor optical amplifier is as small as 0.8 mm × 0.6 mm which is less 1/10 of those made of silicon oxinitride material. Wavelength tuning range of approximately 55 nm was demonstrated, which covers entire L-band of the optical communication wavelength system. Furthermore, a spectral linewidth narrower than 100 kHz was obtained by optimizing the design of the external optical cavity. The optical nonlinearity of silicon is described and the influence on laser oscillation is also discussed. |
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GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 |
| container_issue |
6 |
| title_short |
Narrow Spectral Linewidth Silicon Photonic Wavelength Tunable Laser Diode for Digital Coherent Communication System |
| url |
http://dx.doi.org/10.1109/JSTQE.2016.2559418 http://ieeexplore.ieee.org/document/7460878 |
| remote_bool |
false |
| author2 |
Tang, Rui Yamada, Hirohito |
| author2Str |
Tang, Rui Yamada, Hirohito |
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184666007 |
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| doi_str |
10.1109/JSTQE.2016.2559418 |
| up_date |
2024-07-04T04:06:22.278Z |
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1803619907435233280 |
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