10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration
This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Vokic, Nemanja [verfasserIn] |
|---|
| Format: |
Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: IEEE journal of selected topics in quantum electronics - New York, NY : IEEE, 1995, 22(2016), 6, Seite 1-9 |
|---|---|
| Übergeordnetes Werk: |
volume:22 ; year:2016 ; number:6 ; pages:1-9 |
| Links: |
|---|
| DOI / URN: |
10.1109/JSTQE.2016.2564644 |
|---|
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OLC1986126919 |
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| 520 | |a This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. | ||
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| 650 | 4 | |a BiCMOS integrated circuits | |
| 650 | 4 | |a driver circuits | |
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| 700 | 1 | |a Zimmermann, Horst |4 oth | |
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10.1109/JSTQE.2016.2564644 doi PQ20170301 (DE-627)OLC1986126919 (DE-599)GBVOLC1986126919 (PRQ)c1611-b382e4544a93356a88c52d89abc8e64af6d058f390685ab1172fad20e080074a0 (KEY)027239992016000002200060000110gbsswitchablebinarypam4receiverandringmodulatord DE-627 ger DE-627 rakwb eng 530 620 DNB Vokic, Nemanja verfasserin aut 10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. Optical waveguides Silicon circuit noise Optical transmitters Analog integrated circuits optical receivers Photonics Modulation BiCMOS integrated circuits driver circuits Capacitance Receivers Brandl, Paul oth Schneider-Hornstein, Kerstin oth Goll, Bernhard oth Zimmermann, Horst oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-9 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-9 http://dx.doi.org/10.1109/JSTQE.2016.2564644 Volltext http://ieeexplore.ieee.org/document/7466123 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-9 |
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10.1109/JSTQE.2016.2564644 doi PQ20170301 (DE-627)OLC1986126919 (DE-599)GBVOLC1986126919 (PRQ)c1611-b382e4544a93356a88c52d89abc8e64af6d058f390685ab1172fad20e080074a0 (KEY)027239992016000002200060000110gbsswitchablebinarypam4receiverandringmodulatord DE-627 ger DE-627 rakwb eng 530 620 DNB Vokic, Nemanja verfasserin aut 10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. Optical waveguides Silicon circuit noise Optical transmitters Analog integrated circuits optical receivers Photonics Modulation BiCMOS integrated circuits driver circuits Capacitance Receivers Brandl, Paul oth Schneider-Hornstein, Kerstin oth Goll, Bernhard oth Zimmermann, Horst oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-9 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-9 http://dx.doi.org/10.1109/JSTQE.2016.2564644 Volltext http://ieeexplore.ieee.org/document/7466123 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-9 |
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10.1109/JSTQE.2016.2564644 doi PQ20170301 (DE-627)OLC1986126919 (DE-599)GBVOLC1986126919 (PRQ)c1611-b382e4544a93356a88c52d89abc8e64af6d058f390685ab1172fad20e080074a0 (KEY)027239992016000002200060000110gbsswitchablebinarypam4receiverandringmodulatord DE-627 ger DE-627 rakwb eng 530 620 DNB Vokic, Nemanja verfasserin aut 10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. Optical waveguides Silicon circuit noise Optical transmitters Analog integrated circuits optical receivers Photonics Modulation BiCMOS integrated circuits driver circuits Capacitance Receivers Brandl, Paul oth Schneider-Hornstein, Kerstin oth Goll, Bernhard oth Zimmermann, Horst oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-9 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-9 http://dx.doi.org/10.1109/JSTQE.2016.2564644 Volltext http://ieeexplore.ieee.org/document/7466123 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-9 |
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10.1109/JSTQE.2016.2564644 doi PQ20170301 (DE-627)OLC1986126919 (DE-599)GBVOLC1986126919 (PRQ)c1611-b382e4544a93356a88c52d89abc8e64af6d058f390685ab1172fad20e080074a0 (KEY)027239992016000002200060000110gbsswitchablebinarypam4receiverandringmodulatord DE-627 ger DE-627 rakwb eng 530 620 DNB Vokic, Nemanja verfasserin aut 10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. Optical waveguides Silicon circuit noise Optical transmitters Analog integrated circuits optical receivers Photonics Modulation BiCMOS integrated circuits driver circuits Capacitance Receivers Brandl, Paul oth Schneider-Hornstein, Kerstin oth Goll, Bernhard oth Zimmermann, Horst oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-9 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-9 http://dx.doi.org/10.1109/JSTQE.2016.2564644 Volltext http://ieeexplore.ieee.org/document/7466123 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-9 |
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10.1109/JSTQE.2016.2564644 doi PQ20170301 (DE-627)OLC1986126919 (DE-599)GBVOLC1986126919 (PRQ)c1611-b382e4544a93356a88c52d89abc8e64af6d058f390685ab1172fad20e080074a0 (KEY)027239992016000002200060000110gbsswitchablebinarypam4receiverandringmodulatord DE-627 ger DE-627 rakwb eng 530 620 DNB Vokic, Nemanja verfasserin aut 10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration 2016 Text txt rdacontent ohne Hilfsmittel zu benutzen n rdamedia Band nc rdacarrier This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. Optical waveguides Silicon circuit noise Optical transmitters Analog integrated circuits optical receivers Photonics Modulation BiCMOS integrated circuits driver circuits Capacitance Receivers Brandl, Paul oth Schneider-Hornstein, Kerstin oth Goll, Bernhard oth Zimmermann, Horst oth Enthalten in IEEE journal of selected topics in quantum electronics New York, NY : IEEE, 1995 22(2016), 6, Seite 1-9 (DE-627)184666007 (DE-600)1232977-0 (DE-576)046708901 1077-260X nnns volume:22 year:2016 number:6 pages:1-9 http://dx.doi.org/10.1109/JSTQE.2016.2564644 Volltext http://ieeexplore.ieee.org/document/7466123 GBV_USEFLAG_A SYSFLAG_A GBV_OLC SSG-OLC-TEC SSG-OLC-PHY GBV_ILN_70 GBV_ILN_2006 AR 22 2016 6 1-9 |
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10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration |
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10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration |
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10 gb/s switchable binary/pam-4 receiver and ring modulator driver for 3-d optoelectronic integration |
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10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration |
| abstract |
This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. |
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This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. |
| abstract_unstemmed |
This paper presents ring modulator driver and receiver circuits designed for three-dimensional photonic-electronic integration using interwafer connections, whose parasitic capacitance is expected to be in the order of 15 fF. Both transmitter and receiver can operate with binary and PAM-4 modulation at 10 Gb/s. To the authors knowledge, it is the first PAM-4 ring modulator driver being presented. The circuits are designed in AMS 0.35-μm SiGe BiCMOS technology with total power consumptions of 160 and 180 mW for transmitter and receiver, respectively. The receiver's sensitivity is -27 dBm for binary and -22 dBm for 4-PAM signals both at a photodiode responsivity of R = 0.9 A/W. A monitor transimpedance amplifier with sensitivity -32 dBm was also designed in order to control the operating point of the ring modulator. |
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10 Gb/s Switchable Binary/PAM-4 Receiver and Ring Modulator Driver for 3-D Optoelectronic Integration |
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http://dx.doi.org/10.1109/JSTQE.2016.2564644 http://ieeexplore.ieee.org/document/7466123 |
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Brandl, Paul Schneider-Hornstein, Kerstin Goll, Bernhard Zimmermann, Horst |
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